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1. 发明申请

US20090052834A1 OPTICAL INTEGRATED DEVICE 有权
标题翻译：光学集成器件
公开(公告)号：US20090052834A1
公开(公告)日：2009-02-26
申请号：US12181448
申请日：2008-07-29
申请人： Shinsuke TANAKA , Kazumasa TAKABAYASHI , Ayahito UETAKE
发明人： Shinsuke TANAKA , Kazumasa TAKABAYASHI , Ayahito UETAKE
IPC分类号： G02B6/12
CPC分类号： H01S5/026 , G02B6/125 , G02B2006/121 , H01S5/4025 , H01S5/50
摘要： An optical integrated device includes an optical waveguide structure formed on a semiconductor substrate and including a plurality of first channel optical waveguide portions, an optical coupler portion and a second channel optical waveguide portion, a burying layer formed from a semi-insulating semiconductor material and burying the optical waveguide structure therein such that an upper portion thereof forms a flat face and a side portion thereof forms an inclined face having a predetermined angle with respect to the semiconductor substrate, and a plurality of dummy structure bodies provided over a desired region in the proximity of at least an output side of the optical coupler portion so that radiation light from the optical coupler portion is spatially separated from signal light propagating along the second channel optical waveguide portion. The plural dummy structure bodies are provided discretely so as to be buried flat by the burying layer.
摘要翻译：光学集成器件包括形成在半导体衬底上并包括多个第一通道光波导部分的光波导结构，光耦合部分和第二通道光波导部分，由半绝缘半导体材料形成的掩埋层和埋入其中的光波导结构使得其上部形成平坦面，并且其侧部形成相对于半导体衬底具有预定角度的倾斜面，以及设置在邻近的所需区域上的多个虚设结构体至少一个光耦合器部分的输出侧，使得来自光耦合器部分的辐射光与沿着第二通道光波导部分传播的信号光在空间上分离。多个虚拟结构体离散地设置成被埋入层平坦地埋设。

2. 发明申请

US20130330867A1 SEMICONDUCTOR OPTICAL INTEGRATED DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体光学集成器件及其制造方法
公开(公告)号：US20130330867A1
公开(公告)日：2013-12-12
申请号：US13966592
申请日：2013-08-14
申请人： Shigekazu OKUMURA , Mitsuru EKAWA , Shuichi TOMABECHI , Ayahito UETAKE
发明人： Shigekazu OKUMURA , Mitsuru EKAWA , Shuichi TOMABECHI , Ayahito UETAKE
IPC分类号： H01S5/20
CPC分类号： H01S5/2081 , B82Y20/00 , H01S5/02288 , H01S5/026 , H01S5/0265 , H01S5/12 , H01S5/2201 , H01S5/3202 , H01S5/3211 , H01S5/34306
摘要： A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle θ greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.
摘要翻译：半导体光学集成器件包括形成在衬底的（001）平面上的第一半导体光学器件和第二半导体光学器件，所述第二半导体光学器件形成在从第一半导体光学器件（110）取向的衬底的（001）面上并且其光学连接到第一半导体光学器件。第一半导体光学器件包括第一芯层和第一覆层，其形成在第一芯层上，并且在第二半导体光学器件侧上具有形成角度θ大于或等于55°的一侧的晶体表面度和小于或等于90度与（001）面。

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