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1. 发明申请

US20090294042A1 CUTTING METHOD AND CUTTING APPARATUS 审中-公开
标题翻译：切割方法和切割装置
公开(公告)号：US20090294042A1
公开(公告)日：2009-12-03
申请号：US12474286
申请日：2009-05-29
申请人： Shinsuke TAKAHASHI , Kyoushisa Uchiumi , Tatsuya Fujinami
发明人： Shinsuke TAKAHASHI , Kyoushisa Uchiumi , Tatsuya Fujinami
IPC分类号： B32B38/10
CPC分类号： B32B38/0004 , B26D1/245 , B26D7/08 , B26D7/084 , B26D7/34 , B32B37/203 , B32B2037/246 , B32B2307/536 , B32B2457/20 , B32B2457/206 , Y10T156/12
摘要： A cutting method and a cutting apparatus are provided which are capable of cutting a film without causing the cracking of a hard thin film or the deformation and/or property change of the layer beneath the hard thin film. The cutting apparatus includes: a conveying device that conveys a layered film including a base material and an inorganic film being a surface layer harder than the base material; a laminating section that attaches a laminate film to a predetermined cutting position of the inorganic film of the traveling layered film; a cutting section that cuts the layered film to which the laminate film is attached along the predetermined cutting position from the side opposite to the laminate film together with the laminate film; and a detaching section that detaches the laminate film after the cutting from the layered film.
摘要翻译：提供了能够切割薄膜而不引起硬质薄膜的破裂或硬质薄膜下方的层的变形和/或变形的切割方法和切割装置。切割装置包括：输送包括基材的层状膜和比基材硬的表层的无机膜的输送装置; 将层叠膜附着到行进层叠膜的无机膜的规定切断位置的层叠部，与叠层膜一起，从与层压膜相反的一侧沿预定的切割位置切割层叠膜的层叠膜的切断部; 以及从层叠膜剥离层压膜后的分离部。

2. 发明授权

US08592004B2 Film deposition method 有权
标题翻译：膜沉积法
公开(公告)号：US08592004B2
公开(公告)日：2013-11-26
申请号：US12880615
申请日：2010-09-13
申请人： Tatsuya Fujinami , Shinsuke Takahashi , Jun Fujinawa , Kouji Tonohara
发明人： Tatsuya Fujinami , Shinsuke Takahashi , Jun Fujinawa , Kouji Tonohara
IPC分类号： C23C16/458
CPC分类号： C23C16/50 , C23C16/44 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/517 , C23C16/54 , C23C16/545
摘要： A film deposition method deposits a film on a surface of a substrate in strip form traveling on a peripheral surface of a cylindrical drum in at least one film deposition compartment around the peripheral surface of the drum. The method disposes previously a differential compartment between one film deposition compartment and a compartment including a wrapping space containing at least one of a first position at which the substrate starts to travel on the drum and a second position at which the substrate separates from the drum, the differential compartments communicating with the compartment including the wrapping space and the film deposition compartment, sets a first pressure of the wrapping space lower than a second pressure of the at least one film deposition compartment and performs film deposition in the film deposition compartment with electric power supplied to the drum.
摘要翻译：薄膜沉积方法将薄膜沉积在基板的表面上，以条带形式在圆筒形滚筒的圆周表面上行进，在至少一个薄膜沉积室周围的圆筒表面上。该方法事先将一个薄膜沉积隔室和隔室之间的差分隔室置于包含一个包装空间的隔间，该包装空间包含基板开始在滚筒上行进的第一位置和基板与滚筒分离的第二位置中的至少一个，与包括所述包装空间和所述成膜室的所述隔室连通的所述差动隔间将所述包装空间的第一压力设定为低于所述至少一个成膜室的第二压力，并且利用电力在所述成膜室中进行膜沉积提供给鼓。

3. 发明申请

US20090229520A1 FILM DEPOSITING APPARATUS 有权
标题翻译：薄膜沉积装置
公开(公告)号：US20090229520A1
公开(公告)日：2009-09-17
申请号：US12404022
申请日：2009-03-13
申请人： Tatsuya Fujinami , Toshiya Takahashi
发明人： Tatsuya Fujinami , Toshiya Takahashi
IPC分类号： C23C16/54
CPC分类号： C23C16/509 , C23C16/4412 , C23C16/45502 , C23C16/545
摘要： A film depositing apparatus comprises: a rotatable drum within a chamber around which a substrate is wrapped in a specified surface region; a film depositing unit comprising a film depositing electrode spaced facing to a surface of the drum, and a feed gas supply section supplying a feed gas for forming a film into a gap between the drum and the film depositing electrode; and an exhaust unit that exhausts the gap between the drum and the film depositing electrode during film formation by the film depositing unit so as to forcibly discharge the feed gas, supplied into the gap by the feed gas supply section, through at least one of end portions of the gap upstream side and downstream side in a rotating direction of the drum uniformly over an entire region of the gap in a direction parallel to the axis of rotation of the drum.
摘要翻译：一种成膜设备包括：在室内的可旋转的滚筒，在该腔室内衬底被包裹在指定的表面区域中; 膜沉积单元，其包括面对所述滚筒的表面间隔开的膜沉积电极;以及进料气体供应部分，其将用于将膜形成的进料气体供应到所述滚筒和所述膜沉积电极之间的间隙中; 以及排气单元，其通过所述成膜单元在成膜期间排出所述滚筒和所述膜沉积电极之间的间隙，以便强制地将由所述进料气体供应部供应到所述间隙中的进料气体排出至少一个末端在滚筒的旋转方向上的间隙上游侧和下游侧的部分在平行于滚筒的旋转轴线的方向上在间隙的整个区域上均匀地布置。

4. 发明授权

US08524333B2 Method of manufacturing gas barrier film 有权
标题翻译：阻气膜的制造方法
公开(公告)号：US08524333B2
公开(公告)日：2013-09-03
申请号：US13044024
申请日：2011-03-09
申请人： Tatsuya Fujinami
发明人： Tatsuya Fujinami
IPC分类号： C23C16/34 , C23C16/52
CPC分类号： C23C16/509 , C23C16/345 , C23C16/545
摘要： The method of manufacturing a gas barrier film feeds long lengths of a substrate and forms a silicon nitride film as the gas barrier film on the substrate by a capacitively coupled plasma-enhanced CVD technique while transporting the substrate in a longitudinal direction. Gaseous raw materials using in the forming step of the silicon nitride film includes at least silane gas and ammonia gas, and a ratio P/Q [W/sccm] is not less than 1 when a flow rate of the silane gas is denoted as Q [sccm] and a power input for generating a capacitively coupled plasma is denoted as P [W], a tension applied to the substrate transported between two transporting elements is not more than 100 [N/m], and a pair of electrodes for at least forming the silicon nitride film on the substrate is interposed between the two transporting elements.
摘要翻译：制造阻气膜的方法通过电容耦合等离子体增强CVD技术在长度方向上输送基板，从而供给长的基板，并在基板上形成作为阻气膜的氮化硅膜。在氮化硅膜的形成工序中使用的气态原料至少含有硅烷气体和氨气，当硅烷气体的流量表示为Q时，P / Q [W / sccm]的比率不小于1 [sccm]和用于产生电容耦合等离子体的功率输入表示为P [W]，施加到在两个传输元件之间传送的衬底的张力不大于100 [N / m]，并且一对电极在基板上形成氮化硅膜最少的是介于两个输送元件之间。

5. 发明申请

US20080192587A1 TRANSFER APPARATUS, TRANSFER METHOD, RECORDING MEDIUM, AND MAGNETIC RECORDING APPARATUS 审中-公开
标题翻译：转印装置，转印方法，记录介质和磁记录装置
公开(公告)号：US20080192587A1
公开(公告)日：2008-08-14
申请号：US12028624
申请日：2008-02-08
申请人： Takatoshi HORIKAWA , Tatsuya Fujinami
发明人： Takatoshi HORIKAWA , Tatsuya Fujinami
IPC分类号： G11B11/00
CPC分类号： G11B5/865
摘要： A transfer apparatus comprises: a master carrier on which a minute concave-convex shape is formed; a slave medium to which the concave-convex shape or transfer information expressed by the concave-convex shape is to be transferred; and a holder which holds the slave medium and to which the master carrier is fixed. In the transfer apparatus, the positioning of the master carrier and the slave medium is precisely performed, and the work for supplying the master carrier may be simplified. As a result, it is possible to perform the transfer operation with high efficiency and excellent productivity.
摘要翻译：传送装置包括：形成微小凹凸形状的主载体; 要传送凹凸形状或由凹凸形状表示的传送信息的从属介质; 以及保持从属介质并且主载架固定到该支架的支架。在传送装置中，精确地执行主载波和从属介质的定位，并且可以简化用于提供主载波的工作。结果，可以以高效率和优异的生产率进行转印操作。

6. 发明申请

US20090197101A1 GAS BARRIER LAYER DEPOSITION METHOD, GAS BARRIER FILM AND ORGANIC EL DEVICE 审中-公开
标题翻译：气体阻隔层沉积法，气体阻隔膜和有机EL器件
公开(公告)号：US20090197101A1
公开(公告)日：2009-08-06
申请号：US12363360
申请日：2009-01-30
申请人： Masami Nakagame , Toshiya Takahashi , Tomoo Murakami , Meiki Ooseki , Tatsuya Fujinami
发明人： Masami Nakagame , Toshiya Takahashi , Tomoo Murakami , Meiki Ooseki , Tatsuya Fujinami
IPC分类号： B32B9/00 , C23C16/34
CPC分类号： C23C16/5096 , C23C16/345 , H01L51/5253 , Y10T428/31663
摘要： The method of depositing a gas barrier layer includes supplying a gas material including silane gas and ammonia gas as and a discharge gas including nitrogen gas as and depositing a silicon nitride film on a substrate using capacitively coupled chemical vapor deposition to form the gas barrier layer on the substrate. A ratio P/Q of RF power P (W) required to form the silicon nitride film to a total gas flow rate Q (sccm) of the silane gas, the ammonia gas and the nitrogen gas is in a range of from 0.4 to 40. The gas barrier film includes the gas barrier layer deposited by the gas barrier layer deposition method. The organic EL device includes the gas barrier film that serves as a sealing film.
摘要翻译：沉积阻气层的方法包括：使用电容耦合的化学气相沉积法在基板上提供包括硅烷气体和氨气的气体和包括氮气的放电气体，并在衬底上沉积氮化硅膜，以形成阻气层底物。形成氮化硅膜所需的RF功率P（W）与硅烷气体，氨气和氮气的总气体流量Q（sccm）的比P / Q为0.4〜40 阻气膜包括通过阻气层沉积法沉积的阻气层。有机EL器件包括用作密封膜的阻气膜。

7. 发明授权

US07080465B2 Method of manufacturing inkjet recording sheet and drying apparatus for application film 有权
标题翻译：喷墨记录纸的制造方法以及涂布膜的干燥装置
公开(公告)号：US07080465B2
公开(公告)日：2006-07-25
申请号：US10793244
申请日：2004-03-05
申请人： Tatsuya Fujinami , Yutaka Kashiwabara , Katsuhiko Takada
发明人： Tatsuya Fujinami , Yutaka Kashiwabara , Katsuhiko Takada
IPC分类号： F26B13/06
CPC分类号： F26B13/108 , F26B13/10 , F26B21/004
摘要： The present invention dries an ink absorption layer using a drying apparatus after applying an ink absorption layer application liquid containing inorganic particles and water-soluble resin to a continuously running web and thereby reduces a drying speed distribution in the width direction of the ink absorption layer to 20% or less.
摘要翻译：本发明在将含有无机颗粒和水溶性树脂的吸墨层涂布液施加到连续流动的纤维网上之后，使用干燥装置干燥墨吸收层，从而将吸墨层的宽度方向的干燥速度分布降低到 20％以下。

8. 发明授权

US08999062B2 Film depositing apparatus 有权
标题翻译：胶片沉积装置
公开(公告)号：US08999062B2
公开(公告)日：2015-04-07
申请号：US12404022
申请日：2009-03-13
申请人： Tatsuya Fujinami , Toshiya Takahashi
发明人： Tatsuya Fujinami , Toshiya Takahashi
IPC分类号： C23C16/503 , C23C16/54 , C23C16/509 , C23C16/44 , C23C16/455
CPC分类号： C23C16/509 , C23C16/4412 , C23C16/45502 , C23C16/545
摘要： A film depositing apparatus comprises: a rotatable drum within a chamber around which a substrate is wrapped in a specified surface region; a film depositing unit comprising a film depositing electrode spaced facing to a surface of the drum, and a feed gas supply section supplying a feed gas for forming a film into a gap between the drum and the film depositing electrode; and an exhaust unit that exhausts the gap between the drum and the film depositing electrode during film formation by the film depositing unit so as to forcibly discharge the feed gas, supplied into the gap by the feed gas supply section, through at least one of end portions of the gap upstream side and downstream side in a rotating direction of the drum uniformly over an entire region of the gap in a direction parallel to the axis of rotation of the drum.
摘要翻译：一种成膜设备包括：在室内的可旋转的滚筒，在该腔室内衬底被包裹在指定的表面区域中; 膜沉积单元，其包括面对所述滚筒的表面间隔开的膜沉积电极;以及进料气体供应部分，其将用于将膜形成的进料气体供应到所述滚筒和所述膜沉积电极之间的间隙中; 以及排气单元，其通过所述成膜单元在成膜期间排出所述滚筒和所述膜沉积电极之间的间隙，以便强制地将由所述进料气体供应部供应到所述间隙中的进料气体排出至少一个末端在滚筒的旋转方向上的间隙上游侧和下游侧的部分在平行于滚筒的旋转轴线的方向上在间隙的整个区域上均匀地布置。

9. 发明申请

US20090272322A1 FILM DEPOSITING APPARATUS 审中-公开
标题翻译：薄膜沉积装置
公开(公告)号：US20090272322A1
公开(公告)日：2009-11-05
申请号：US12430555
申请日：2009-04-27
申请人： Tatsuya Fujinami , Hiroyuki Nishida , Norihiro Kadota
发明人： Tatsuya Fujinami , Hiroyuki Nishida , Norihiro Kadota
IPC分类号： C23C16/00 , C23C14/00 , C23C14/34
CPC分类号： C23C14/541 , B05D1/60 , B05D7/54 , B05D2252/02 , C23C14/562
摘要： A film depositing apparatus comprises: a transport unit that transports a substrate along a predetermined transport path; a first film deposition compartment that is provided with a first film depositing unit for forming an organic layer on a surface of the substrate; a second film deposition compartment that is disposed downstream of the first film deposition compartment in the transport path and which is provided with a second film depositing unit for forming an inorganic layer on top of the organic layer; and an evacuating unit that reduces the pressures within the first film deposition compartment and the second film deposition compartment.
摘要翻译：一种胶片沉积装置，包括：沿着预定传送路径传送基板的传送单元; 第一膜沉积室，其设置有用于在所述基板的表面上形成有机层的第一膜沉积单元; 第二膜沉积室，其设置在所述输送路径中的所述第一膜沉积室的下游，并且设置有用于在所述有机层的顶部上形成无机层的第二膜沉积单元; 以及减少第一膜沉积室和第二膜沉积室内的压力的抽空单元。

10. 发明申请

US20070002480A1 DC demagnetization method and apparatus for magnetic recording medium and magnetic transfer method and apparatus 审中-公开
标题翻译：用于磁记录介质的DC去磁方法和装置以及磁转移方法和装置
公开(公告)号：US20070002480A1
公开(公告)日：2007-01-04
申请号：US11476857
申请日：2006-06-29
申请人： Tatsuya Fujinami , Makoto Nagao , Kazunori Komatsu
发明人： Tatsuya Fujinami , Makoto Nagao , Kazunori Komatsu
IPC分类号： G11B5/86 , G11B5/03
CPC分类号： G11B5/865 , B82Y10/00 , G11B5/0245 , G11B5/743
摘要： According to the present invention, since the applied magnetic field strength is controlled so as to fall between maximum magnetic field strength×0.7 and the maximum magnetic field strength over almost an entire surface of the magnetic recording medium, there is not much variation in the strength of the applied magnetic field relative to media coercivity during DC demagnetization, which makes it possible to obtain uniform magnetization over almost the entire surface.
摘要翻译：根据本发明，由于施加的磁场强度被控制为在磁记录介质的几乎整个表面上落在最大磁场强度×0.7和最大磁场强度之间，因此强度的变化不大的相对于介质矫顽力在DC退磁期间的施加磁场，这使得可以在几乎整个表面上获得均匀的磁化。

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