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1. 发明授权

US6112174A Recognition dictionary system structure and changeover method of speech recognition system for car navigation 失效
标题翻译：汽车导航语音识别系统识别字典系统结构与转换方法
公开(公告)号：US6112174A
公开(公告)日：2000-08-29
申请号：US970109
申请日：1997-11-13
申请人： Shinji Wakisaka , Kazuyoshi Ishiwatari , Kouji Ito , Tetsuji Toge , Makoto Tanaka
发明人： Shinji Wakisaka , Kazuyoshi Ishiwatari , Kouji Ito , Tetsuji Toge , Makoto Tanaka
IPC分类号： G10L15/00 , G01C21/36 , G06F17/28 , G08G1/0969 , G10L15/22 , G10L15/26 , G10L15/28 , G10L15/04 , G10L21/00
CPC分类号： G01C21/3608
摘要： A speech recognition system realizing large-vocabulary speech recognition at a low cost without deteriorating the rate of recognition and a recognition speed performance is provided with a dictionary change-over section for making a change-over between dictionaries to be subjected to speech recognition in accordance with dictionary change-over information, a first memory for storing a plurality of dictionaries, a second memory for storing one dictionary made an object of recognition, and a speech recognition section for performing a speech recognition processing, whereby speech recognition is performed while making a change-over between dictionaries, as required. For example, in a car navigation speech recognition system, the change-over between dictionaries is made for each area in accordance with position information.
摘要翻译：提供了一种以低成本实现大词汇语音识别而不降低识别速度和识别速度性能的语音识别系统，用于在根据字典进行语音识别的字典之间进行转换的字典转换部分具有字典转换信息，用于存储多个字典的第一存储器，用于存储一个确定识别对象的一个字典的第二存储器和用于执行语音识别处理的语音识别部分，由此在进行语音识别的同时进行语音识别根据需要在字典之间切换。例如，在汽车导航语音识别系统中，根据位置信息对每个区域进行字典之间的切换。

2. 发明授权

US06631349B1 Speech recognition method and system 失效
公开(公告)号：US06631349B1
公开(公告)日：2003-10-07
申请号：US09554003
申请日：2000-05-09
申请人： Kazuyoshi Ishiwatari , Kazuo Kondo , Shinji Wakisaka
发明人： Kazuyoshi Ishiwatari , Kazuo Kondo , Shinji Wakisaka
IPC分类号： G10L1500
CPC分类号： G10L15/08 , G10L2015/025
摘要： Frames making up an input speech are each collated with a string of phonemes representing speech candidates to be recognized, whereby evaluation values regarding the phonemes are computed. The frames are each compared with part of the phoneme string so as to reduce computations and memory capacity required in recognizing the input speech based on the evaluation values. That is, each frame is compared with a portion of the phoneme string to acquire an evaluation value for each phoneme. If the acquired evaluation value meets a predetermined condition, part of the phonemes to be collated with the next frame are changed. Illustratively, if the evaluation value for the phoneme heading a given portion of collated phonemes is smaller than the evaluation value of the phoneme which terminates that phoneme portion, then the head phoneme is replaced by the next phoneme. The new portion of phonemes obtained by the replacement is used for collation with the next frame.

3. 发明授权

US06411929B1 Speech recognition method and system 失效
标题翻译：语音识别方法和系统
公开(公告)号：US06411929B1
公开(公告)日：2002-06-25
申请号：US09625855
申请日：2000-07-26
申请人： Kazuyoshi Ishiwatari , Kazuo Kondo , Shinji Wakisaka
发明人： Kazuyoshi Ishiwatari , Kazuo Kondo , Shinji Wakisaka
IPC分类号： G10L1500
CPC分类号： G10L15/08 , G10L2015/025
摘要： Frames making up an input speech are each collated with a string of phonemes representing speech candidates to be recognized, whereby evaluation values regarding the phonemes are computed. The frames are each compared with part of the phoneme string so as to reduce computations and memory capacity required in recognizing the input speech based on the evaluation values. That is, each frame is compared with a portion of the phoneme string to acquire an evaluation value for each phoneme. If the acquired evaluation value meets a predetermined condition, part of the phonemes to be collated with the next frame are changed. Illustratively, if the evaluation value for the phoneme heading a given portion of collated phonemes is smaller than the evaluation value of the phoneme which terminates that phoneme portion, then the head phoneme is replaced by the next phoneme. The new portion of phonemes obtained by the replacement is used for collation with the next frame.
摘要翻译：构成输入语音的帧各自与表示要识别的语音候选的一系列音素进行对照，由此计算关于音素的评估值。每个帧都与音素串的一部分进行比较，以便减少基于评估值识别输入语音所需的计算和存储器容量。也就是说，将每帧与音素串的一部分进行比较，以获得每个音素的评估值。如果所获取的评估值满足预定条件，则与下一帧对照的一部分音素被改变。说明性地，如果引导整理音素的给定部分的音素的评价值小于终止该音素部分的音素的评价值，则头音素被下一个音素代替。通过替换获得的新部分音素被用于与下一帧进行核对。

4. 发明授权

US07888238B2 Method of manufacturing semiconductor device having semiconductor formation regions of different planar sizes 有权
标题翻译：具有不同平面尺寸的半导体形成区域的半导体器件的制造方法
公开(公告)号：US07888238B2
公开(公告)日：2011-02-15
申请号：US12330745
申请日：2008-12-09
申请人： Shinji Wakisaka , Norihiko Kaneko
发明人： Shinji Wakisaka , Norihiko Kaneko
IPC分类号： H01L21/00
CPC分类号： H01L23/525 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/561 , H01L21/78 , H01L23/3114 , H01L23/5329 , H01L24/11 , H01L24/12 , H01L24/94 , H01L2224/0231 , H01L2224/0401 , H01L2224/13023 , H01L2224/13099 , H01L2224/16 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/18301 , H01L2924/30105
摘要： A wafer process material is prepared which has a plurality of semiconductor formation regions of different planar sizes, each including a low dielectric constant film/wiring line stack structure component. A laser beam is applied onto a dicing street of the necessary semiconductor formation region and onto its straight extension in order to remove partial areas of the low dielectric constant film/wiring line stack structure components of the necessary semiconductor formation region and the unnecessary semiconductor formation region so that first groove and the second groove are formed. A protective film is formed in the second groove formed in the unnecessary semiconductor formation region and on the low dielectric constant film/wiring line stack structure component. An upper wiring line and a sealing film are formed on the protective film, and a semiconductor wafer is cut along the dicing street.
摘要翻译：制备具有多个不同平面尺寸的半导体形成区域的晶片处理材料，每个半导体形成区域包括低介电常数膜/布线层叠结构部件。将激光束施加到必要的半导体形成区域的切割街道上，并将其施加到其直线延伸部上，以便去除所需半导体形成区域的低介电常数薄膜/布线层叠结构部件的部分区域和不需要的半导体形成区域从而形成第一槽和第二槽。在形成于不需要的半导体形成区域的第二沟槽和低介电常数膜/布线堆叠结构部件上形成保护膜。在保护膜上形成上部布线和密封膜，沿着切割街切割半导体晶片。

5. 发明授权

US07808073B2 Network electronic component, semiconductor device incorporating network electronic component, and methods of manufacturing both 有权
标题翻译：网络电子元件，结合网络电子元件的半导体器件及其制造方法
公开(公告)号：US07808073B2
公开(公告)日：2010-10-05
申请号：US11093571
申请日：2005-03-30
申请人： Shinji Wakisaka
发明人： Shinji Wakisaka
IPC分类号： H01L23/52
CPC分类号： H01L25/16 , H01G4/228 , H01G4/33 , H01L23/3114 , H01L23/5389 , H01L23/544 , H01L23/642 , H01L24/11 , H01L24/12 , H01L24/19 , H01L2223/54426 , H01L2223/54453 , H01L2223/54466 , H01L2224/0231 , H01L2224/0401 , H01L2224/04105 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05647 , H01L2224/1147 , H01L2224/12105 , H01L2224/131 , H01L2224/1411 , H01L2224/24137 , H01L2224/73267 , H01L2224/82039 , H01L2924/00013 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/19042 , H01L2924/19043 , H01L2924/3025 , H03H1/02 , H01L2224/13099 , H01L2924/00 , H01L2924/00014 , H01L2924/01024 , H01L2924/013
摘要： A network electronic component comprises a network-electronic-component substrate, a thin-film passive element provided on the substrate, and a plurality of external connection electrodes provided on the substrate in connection with the thin-film passive element.
摘要翻译：网络电子部件包括网络电子部件基板，设置在基板上的薄膜无源元件以及与薄膜无源元件连接而设置在基板上的多个外部连接电极。

6. 发明授权

US07692282B2 Semiconductor device including semiconductor element surrounded by an insulating member wiring structures on upper and lower surfaces of the semiconductor element and insulating member, and manufacturing method thereof 有权
标题翻译：半导体装置，其包括由半导体元件和绝缘构件的上表面和下表面上的绝缘构件布线结构包围的半导体元件及其制造方法
公开(公告)号：US07692282B2
公开(公告)日：2010-04-06
申请号：US11853673
申请日：2007-09-11
申请人： Shinji Wakisaka , Hiroyasu Jobetto , Takeshi Wakabayashi , Ichiro Mihara
发明人： Shinji Wakisaka , Hiroyasu Jobetto , Takeshi Wakabayashi , Ichiro Mihara
IPC分类号： H01L23/52
CPC分类号： H01L24/27 , H01L23/49827 , H01L23/5389 , H01L24/19 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/20 , H01L2224/274 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4943 , H01L2224/73265 , H01L2224/73267 , H01L2224/83191 , H01L2224/83856 , H01L2224/92 , H01L2224/92244 , H01L2224/97 , H01L2225/0651 , H01L2225/06524 , H01L2225/06541 , H01L2225/06586 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19106 , H01L2924/3025 , H01L2224/83 , H01L2224/82 , H01L2924/07025 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.
摘要翻译：第一半导体元件安装在基板上，其周边处于密封状态，被绝缘构件覆盖，其上表面被上绝缘膜覆盖。通过导体将形成在上绝缘膜上的上布线层和通过下绝缘膜形成在基板下方的下布线层连接。第二半导体元件被暴露安装，连接到下布线层。

7. 发明申请

US20050062147A1 Semiconductor device having heat dissipation layer 有权
标题翻译：具有散热层的半导体器件
公开(公告)号：US20050062147A1
公开(公告)日：2005-03-24
申请号：US10940232
申请日：2004-09-13
申请人： Shinji Wakisaka , Hiroyasu Jobetto
发明人： Shinji Wakisaka , Hiroyasu Jobetto
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/12 , H01L23/31 , H01L23/34 , H01L23/367 , H01L23/498 , H05K1/00
CPC分类号： H01L24/83 , H01L23/3128 , H01L23/3677 , H01L23/49816 , H01L24/19 , H01L24/27 , H01L24/29 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/2518 , H01L2224/274 , H01L2224/2919 , H01L2224/32225 , H01L2224/73267 , H01L2224/83191 , H01L2224/8385 , H01L2224/92244 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/00
摘要： A semiconductor device includes a semiconductor constructing body which has a semiconductor substrate, a plurality of external connection electrodes formed on the semiconductor substrate, and heat dissipation columnar electrodes. Upper interconnections are mounted on one side of the semiconductor constructing body and connected to the external connection electrodes of the semiconductor constructing body. A heat dissipation layer is mounted on one side of the semiconductor constructing body and made of the same material as that of the upper interconnections.
摘要翻译：半导体器件包括半导体构造体，其具有半导体衬底，形成在半导体衬底上的多个外部连接电极和散热柱状电极。上部互连件安装在半导体构造体的一侧并连接到半导体构造体的外部连接电极。散热层安装在半导体构造体的一侧，由与上部互连相同的材料制成。

8. 发明授权

US08487443B2 Semiconductor structure, manufacturing method of semiconductor structure and semiconductor device 失效
标题翻译：半导体结构，半导体结构和半导体器件的制造方法
公开(公告)号：US08487443B2
公开(公告)日：2013-07-16
申请号：US13074233
申请日：2011-03-29
申请人： Shinji Wakisaka
发明人： Shinji Wakisaka
IPC分类号： H01L23/48
CPC分类号： H01L23/49827 , B81B7/007 , B81B2207/095 , B81B2207/096 , H01L21/4857 , H01L21/486 , H01L23/3107 , H01L23/49822 , H01L23/5389 , H01L24/19 , H01L24/82 , H01L2224/04105 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2224/92244 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1461 , H01L2924/00
摘要： Disclosed is a semiconductor structure including a semiconductor substrate including an electronic circuit which is provided in a predetermined region of the semiconductor substrate, a wiring provided on the semiconductor substrate in a region outside of the predetermined region, an external connection electrode provided on the wiring, a sealing resin which covers a side surface of the external connection electrode and a wall which intervenes between the electronic circuit and the sealing resin.
摘要翻译：公开了一种半导体结构，包括半导体衬底，该半导体衬底包括设置在半导体衬底的预定区域中的电子电路，设置在半导体衬底上的预定区域外的区域中的布线，设置在布线上的外部连接电极，覆盖外部连接电极的侧面的密封树脂和介于电子电路和密封树脂之间的壁。

9. 发明申请

US20110304043A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110304043A1
公开(公告)日：2011-12-15
申请号：US13152620
申请日：2011-06-03
申请人： Shinji Wakisaka
发明人： Shinji Wakisaka
IPC分类号： H01L23/498 , H01L21/56
CPC分类号： H01L21/568 , H01L23/3128 , H01L23/3135 , H01L23/562 , H01L24/19 , H01L24/20 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00
摘要： A semiconductor device comprises a semiconductor chip which comprises mode-set terminals, and mode-set wiring lines respectively connected to the mode-set terminals, a sealing layer which covers the semiconductor chip and also covers a land of a first mode-set wiring line that is one of the mode-set wiring lines, the sealing layer including a mode-set via hole formed above a land of a second mode-set wiring line, the second mode-set wiring line being one of the mode-set wiring lines and being different from the first mode-set wiring line, a mode-set embedded conductor provided within the mode-set via hole to be connected to the second mode-set wiring line, and a mode-set conductive pattern which is connected to the mode-set embedded conductor and which is provided on the sealing layer above the land of the first mode-set wiring line.
摘要翻译：一种半导体器件包括：半导体芯片，其包括模式设定端子和分别连接到模拟端子的模式布线;覆盖半导体芯片的密封层，并且还覆盖第一模式布线的焊盘即模式布线中的一个，密封层包括形成在第二模式布线的平台上的模式通孔，第二模式设置布线是模式布线并且与第一模式布线不同，设置在与第二模式组布线连接的模式设定通孔内的模式设置嵌入式导体以及连接到第二模式组布线的模式设置导体图案模式嵌入式导体，其设置在第一模式配线的焊盘上方的密封层上。

10. 发明授权

US07368813B2 Semiconductor device including semiconductor element surrounded by an insulating member and wiring structures on upper and lower surfaces of the semiconductor element and insulating member, and manufacturing method thereof 有权
标题翻译：半导体装置，包括由半导体元件和绝缘构件的绝缘构件和上下表面的配线结构包围的半导体元件及其制造方法
公开(公告)号：US07368813B2
公开(公告)日：2008-05-06
申请号：US10986532
申请日：2004-11-10
申请人： Shinji Wakisaka , Hiroyasu Jobetto , Takeshi Wakabayashi , Ichiro Mihara
发明人： Shinji Wakisaka , Hiroyasu Jobetto , Takeshi Wakabayashi , Ichiro Mihara
IPC分类号： H01L23/52
CPC分类号： H01L24/27 , H01L23/49827 , H01L23/5389 , H01L24/19 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/20 , H01L2224/274 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4943 , H01L2224/73265 , H01L2224/73267 , H01L2224/83191 , H01L2224/83856 , H01L2224/92 , H01L2224/92244 , H01L2224/97 , H01L2225/0651 , H01L2225/06524 , H01L2225/06541 , H01L2225/06586 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19106 , H01L2924/3025 , H01L2224/83 , H01L2224/82 , H01L2924/07025 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A first semiconductor element is mounted on a base plate, and is in a sealed state by the periphery thereof being covered by an insulation member, and the upper surface thereof being covered by an upper insulation film. An upper wiring layer formed on the upper insulation film, and the lower wiring layer formed below the base plate via lower insulation films are connected by conductors. A second semiconductor element is mounted exposed, being connected to the lower wiring layer.
摘要翻译：第一半导体元件安装在基板上，其周边处于密封状态，被绝缘构件覆盖，其上表面被上绝缘膜覆盖。通过导体将形成在上绝缘膜上的上布线层和通过下绝缘膜形成在基板下方的下布线层连接。第二半导体元件被暴露安装，连接到下布线层。

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