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1. 发明授权

US10831222B2 Semiconductor apparatus for power supply control and output voltage variable power supply apparatus 有权
公开(公告)号：US10831222B2
公开(公告)日：2020-11-10
申请号：US16352765
申请日：2019-03-13
申请人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
发明人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
IPC分类号： H02P7/288 , G05F1/595 , G05F1/59 , H02P7/285
摘要： A semiconductor apparatus for power supply control includes the following. A voltage control transistor is connected between a voltage input terminal and an output terminal. A control circuit controls the voltage control transistor according to an output feedback voltage. A first external terminal is supplied with an output control signal to control output voltage is input. The control circuit further includes the following. A first error amplifier outputs a voltage according to an electric potential difference between a voltage divided by a first voltage dividing circuit which divides the output voltage of the output terminal and a predetermined reference voltage. An output changing circuit displaces the reference voltage input in the first error amplifier or the voltage divided by the first voltage dividing circuit according to a voltage input in the first external terminal to change the output voltage to a voltage according to the output control signal.

2. 发明授权

US11314271B2 Semiconductor apparatus for power supply control and output voltage variable power supply apparatus 有权
公开(公告)号：US11314271B2
公开(公告)日：2022-04-26
申请号：US17061281
申请日：2020-10-01
申请人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
发明人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
IPC分类号： H02M3/158 , G05F1/59 , H02P7/285
摘要： A power supply control apparatus includes a voltage control transistor connected between a DC voltage input terminal and an output terminal; a control circuit which controls the voltage control transistor according to an output feedback voltage; and a first external terminal receiving an output control signal to control an output voltage. The control circuit includes a first error amplifier outputting a voltage according to an electric potential difference between a voltage divided by a first voltage dividing circuit which divides the output voltage of the output terminal and a predetermined reference voltage; and an output changing circuit including a second error amplifier receiving a voltage input in the first external terminal, a transistor having a control terminal receiving the output of the second error amplifier, and a current mirror circuit connected to the voltage input terminal which transfers an electric current flowing in the transistor. The current mirror circuit is connected to a node from which the divided voltage is taken out, and the output changing circuit displaces the divided voltage according to a voltage input in the first external terminal to change the output voltage according to the output control signal.

3. 发明授权

US10063135B2 Semiconductor integrated circuit for regulator 有权
公开(公告)号：US10063135B2
公开(公告)日：2018-08-28
申请号：US15721364
申请日：2017-09-29
申请人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
发明人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
IPC分类号： H02M1/32 , H02M3/156 , H02M3/158 , H03K17/08 , G05F1/56
CPC分类号： H02M1/32 , G05F1/56 , H02M3/156 , H02M3/158 , H02M2001/327 , H03K17/08 , H03K2017/0806
摘要： A semiconductor integrated circuit for a regulator includes an opening error detecting circuit detecting an opened state of an output terminal; a short-circuiting error detecting circuit detecting a short-circuiting state thereof; a first output terminal outputting a result detected by the opening error detecting circuit to an external unit; a second output terminal outputting a result detected by the short-circuiting error detecting circuit thereto; and a thermal shutdown circuit detecting the temperature of a semiconductor substrate and turns off the voltage control transistor if the detected temperature of the semiconductor substrate exceeds a predetermined temperature. A signal indicating the logic sum of an output signal of the thermal shutdown circuit and that of the short-circuiting error detecting circuit is outputted from the second output terminal such that the output signal of the opening error detecting circuit is not blocked based on the output signal of the thermal shutdown circuit.

4. 发明授权

US11327516B2 Semiconductor apparatus for power supply control and output voltage variable power supply apparatus 有权
公开(公告)号：US11327516B2
公开(公告)日：2022-05-10
申请号：US17061370
申请日：2020-10-01
申请人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
发明人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
IPC分类号： H02M3/158 , G05F1/59 , H02P7/285
摘要： A power supply control apparatus includes a voltage control transistor connected between a DC voltage input terminal and an output terminal; a control circuit controlling the voltage control transistor according to an output feedback voltage; and a first external terminal receiving an output control signal to control an output voltage. The control circuit includes a first error amplifier outputting a voltage according to an electric potential difference between a voltage divided by a first voltage dividing circuit which divides the output voltage of the output terminal and a predetermined reference voltage; and an output changing circuit including a second error amplifier receiving a voltage input in the first external terminal, a transistor having a control terminal receiving the output of the second error amplifier, and a current mirror circuit connected to the voltage input terminal which transfers an electric current flowing in the transistor. The output changing circuit displaces the divided voltage according to a voltage input at the first external terminal to change the output voltage according to the output control signal.

5. 发明授权

US11353902B2 Power control semiconductor device, variable output voltage power supply, and designing method 有权
公开(公告)号：US11353902B2
公开(公告)日：2022-06-07
申请号：US16861340
申请日：2020-04-29
申请人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
发明人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
IPC分类号： G05F1/56 , G06F30/32
摘要： A power control semiconductor device includes: a voltage control transistor connected between an input terminal and an output terminal; a control circuit that controls the voltage control transistor in accordance with a voltage of the output terminal; and an external terminal that controls an output voltage externally. The control circuit includes: a first divider which has resistor elements connected in series to the output terminal and which divides the output voltage of the output terminal; a first error amplifier that outputs a voltage corresponding to a potential difference between a predetermined reference voltage and a voltage divided by the first divider; and an output voltage change circuit that changes the divided voltage in accordance with a voltage input to the external terminal to change the output voltage in accordance with the voltage of the external terminal.

6. 发明授权

US11454998B2 Power control semiconductor device and variable output voltage power supply 有权
公开(公告)号：US11454998B2
公开(公告)日：2022-09-27
申请号：US16920309
申请日：2020-07-02
申请人： Yoichi Takano , Shinichiro Maki , Katsuhiro Yokoyama
发明人： Yoichi Takano , Shinichiro Maki , Katsuhiro Yokoyama
IPC分类号： G05F1/575 , H02M3/158 , G05F1/59 , G05F1/56
摘要： A power control semiconductor device includes a voltage control transistor, a control circuit, a bias circuit, and external terminals. The voltage control transistor is connected between a voltage input terminal and an output terminal. The bias circuit generates a voltage that operates the control circuit. Output control signals provided from an outside are input to the external terminals to control an output voltage. The control circuit includes an error amplifier and a logic circuit. The error amplifier outputs a voltage corresponding to a potential difference between a reference voltage and a voltage divided by a voltage divider that divides the output voltage. The logic circuit generates: a signal that changes the divided voltage in accordance with the output control signals; and a signal that stops operation of the bias circuit in response to a combination of the output control signals.

7. 发明授权

US10466728B2 Semiconductor integrated circuit for regulator 有权
公开(公告)号：US10466728B2
公开(公告)日：2019-11-05
申请号：US16186099
申请日：2018-11-09
申请人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
发明人： Shinichiro Maki , Yoichi Takano , Katsuhiro Yokoyama
IPC分类号： G05F1/573 , G05F1/575 , H01L27/02 , H02H9/02
摘要： A semiconductor integrated circuit for a regulator includes an output controlling transistor, a controller circuit, a breeder resister and a current limiting resistor. The output controlling transistor is connected between an output terminal and a voltage input terminal. The breeder resister is connected between the output terminal and a constant potential point and generates the feedback voltage. The current limiting resistor is connected with the breeder resistor between the output terminal and the constant potential point.

8. 发明授权

US08716992B2 Current limiting circuit and power supply circuit 有权
标题翻译：限流电路和电源电路
公开(公告)号：US08716992B2
公开(公告)日：2014-05-06
申请号：US13295338
申请日：2011-11-14
申请人： Yoichi Takano , Shinichiro Maki , Hiroshi Nozaki
发明人： Yoichi Takano , Shinichiro Maki , Hiroshi Nozaki
IPC分类号： G05F1/565
CPC分类号： G05F1/573
摘要： A current limiting circuit for limiting an output current in response to a control current includes a detection circuit to detect a detection voltage responsive to an output voltage, and a control current generating circuit to generate a control current responsive to the detection voltage, wherein the control current generating circuit includes a first transistor through which the control current flows, a second transistor that becomes conductive upon a voltage responsive to an amount of the control current being greater than a predetermined voltage above the detection voltage, and a resistor connecting between a base and an emitter of the second transistor to raise a potential at the base of the second transistor above a predetermined level, wherein the amount of the control current flowing through the first transistor decreases as an amount of a current flowing through the second transistor increases.
摘要翻译：用于响应于控制电流限制输出电流的限流电路包括检测电路以检测响应于输出电压的检测电压，以及控制电流产生电路，以响应于检测电压产生控制电流，其中控制电流产生电路包括控制电流流过的第一晶体管，响应于控制电流量大于高于检测电压的预定电压的电压而变为导通的第二晶体管，以及连接在基极和所述第二晶体管的发射极将所述第二晶体管的基极的电位提高到高于预定电平，其中流过所述第一晶体管的所述控制电流的量随着流过所述第二晶体管的电流量而增加。

9. 发明授权

US11474549B2 Semiconductor integrated circuit for regulator, and fan motor system 有权
公开(公告)号：US11474549B2
公开(公告)日：2022-10-18
申请号：US17117705
申请日：2020-12-10
申请人： Yoichi Takano , Shinichiro Maki
发明人： Yoichi Takano , Shinichiro Maki
IPC分类号： G05F1/575 , G05F1/573 , G05F1/56 , G05F1/445
摘要： Disclosed is a semiconductor integrated circuit for a regulator, including: a voltage control transistor connected between a voltage input terminal to which a DC voltage is input and an output terminal; a control circuit that controls the voltage control transistor according to a feedback voltage of an output; a first transistor which is provided in parallel with the voltage control transistor and to which an electric current in a proportional reduction from an electric current flowing to the voltage control transistor flows; a first comparison circuit that determines which of the electric current flowing to the first transistor and a predetermined current value is larger; and a first output terminal for outputting the determination result. An output of the first comparison circuit is inverted in response to the flowing to the first transistor of the electric current smaller than a preset rotation lock detection current value.

10. 发明授权

US09996093B2 Semiconductor integrated circuit for regulator, which detects abnormalities in a connected load 有权
公开(公告)号：US09996093B2
公开(公告)日：2018-06-12
申请号：US15238809
申请日：2016-08-17
申请人： Yoichi Takano , Shinichiro Maki
发明人： Yoichi Takano , Shinichiro Maki
IPC分类号： H02M3/158 , G05F1/56
CPC分类号： G05F1/56 , G05F1/565 , H02M3/158
摘要： A semiconductor integrated circuit for a regulator includes the following: a voltage controlling transistor; a controlling circuit; a first and second transistor; a first external terminal to connect a current voltage converting element; a first and second voltage comparing circuit which compares a converted voltage with a predetermined comparison voltage and determines which is large or small; and a first and second output terminal which externally outputs a result of comparison by the first and second voltage comparing circuit, respectively. When a current larger than a predetermined open-circuit abnormality detecting current value flows in the first transistor, output of the first voltage comparing circuit is inverted. When a current larger than a predetermined short-circuit abnormality detecting current value flows in the second transistor, output of the second voltage comparing circuit is inverted.

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