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1. 发明申请

US20130249102A1 SEMICONDUCTOR DEVICE WITH STRENGTHENED INTER-WIRE AIR GAP STRUCTURES 审中-公开
标题翻译：具有加强的间隙空气隙结构的半导体器件
公开(公告)号：US20130249102A1
公开(公告)日：2013-09-26
申请号：US13607695
申请日：2012-09-08
申请人： Shinichi NAKAO , Ichiro Mizushima
发明人： Shinichi NAKAO , Ichiro Mizushima
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/53295 , H01L21/7682 , H01L21/76834 , H01L23/5222 , H01L23/53223 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a plurality of wires wherein at least some of the regions between wires (inter-wire regions) contain an air gap region formed by capping the wires and inter-wire regions with an insulator film using a film coating process, for example chemical vapor deposition. The existence, size, and shape of the air gap depend upon the film coating parameters and the spacing between wires.
摘要翻译：一种具有多条导线的半导体器件，其中线（线间区域）中的至少一些区域包含通过使用膜涂覆工艺用绝缘膜覆盖电线和线间区域形成的气隙区域，例如化学气相沉积。气隙的存在，尺寸和形状取决于膜涂层参数和电线之间的间距。

2. 发明申请

US20130020706A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130020706A1
公开(公告)日：2013-01-24
申请号：US13423081
申请日：2012-03-16
申请人： Takashi FURUHASHI , Miyoko SHIMADA , Ichiro MIZUSHIMA , Shinichi NAKAO
发明人： Takashi FURUHASHI , Miyoko SHIMADA , Ichiro MIZUSHIMA , Shinichi NAKAO
IPC分类号： H01L23/52 , H01L21/31
CPC分类号： H01L21/7682 , H01L21/31053 , H01L21/76834 , H01L21/76885
摘要： In accordance with an embodiment, a semiconductor device includes a substrate, a line-and-space structure, a first film and a second film. The line-and-space structure includes line patterns arranged on the substrate parallel to one another at a predetermined distance. The first film is formed on side surfaces and bottom surfaces of the line patterns by an insulating film material. The second film is formed on the line-and-space structure across a space between the line patterns by a material showing low wettability to the first film. Space between the line patterns includes an air gap in which at least a bottom surface of the first film is totally exposed.
摘要翻译：根据实施例，半导体器件包括衬底，线间距结构，第一膜和第二膜。线间空间结构包括以预定距离彼此平行布置在基板上的线图案。第一膜通过绝缘膜材料形成在线图案的侧表面和底表面上。通过对第一膜显示低润湿性的材料，在线图形之间的空间结构上形成第二膜。线图案之间的空间包括其中至少第一膜的底表面完全暴露的气隙。

3. 发明申请

US20120243391A1 Optical Disc Device 有权
标题翻译：光盘设备
公开(公告)号：US20120243391A1
公开(公告)日：2012-09-27
申请号：US13425643
申请日：2012-03-21
申请人： Yasunori KITAICHI , Shinichi NAKAO
发明人： Yasunori KITAICHI , Shinichi NAKAO
IPC分类号： G11B7/09
CPC分类号： G11B7/0909 , G11B7/0941
摘要： Provided is an optical disc device including: an objective lens; a plurality of light-receiving elements each for outputting an output signal corresponding to a light amount of reflected light from the optical disc medium; a plurality of amplifiers each for amplifying the output signal from a corresponding one of the light-receiving elements; and a signal output circuit for outputting a focus error signal based on amplified signals from the amplifiers. The optical disc device executes focus servo control of controlling, based on the focus error signal, a position of the objective lens so as to keep constant a distance between the objective lens and a signal surface; moves the objective lens to a position at which accuracy of reading information from the optical disc medium becomes high; and thereafter adjusts a gain of each amplifier so that levels of the amplified signals become close to each other.
摘要翻译：提供一种光盘装置，包括：物镜; 多个光接收元件，用于输出对应于来自光盘介质的反射光的光量的输出信号; 多个放大器，用于放大来自相应的一个光接收元件的输出信号; 以及信号输出电路，用于基于来自放大器的放大信号输出聚焦误差信号。光盘装置执行聚焦伺服控制，基于聚焦误差信号，控制物镜的位置，以保持物镜与信号表面之间的距离恒定; 将物镜移动到从光盘介质读取信息的精度变高的位置; 然后调整每个放大器的增益，使得放大信号的电平变得彼此接近。

4. 发明申请

US20100102452A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件和半导体器件的方法
公开(公告)号：US20100102452A1
公开(公告)日：2010-04-29
申请号：US12537759
申请日：2009-08-07
申请人： Shinichi NAKAO
发明人： Shinichi NAKAO
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02271 , H01L21/02351 , H01L21/3105 , H01L21/31633 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/14 , H01L2924/30105 , H01L2924/00
摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming a cap film, in which pores are formed, on the dielectric film; forming an opening in the cap film and the dielectric film; depositing a conductive material inside the opening; and forming a diffusion barrier film for preventing diffusion of the conductive material on the cap film, after the conductive material is deposited inside the opening, in such a way that a portion of the diffusion barrier film intrudes into the cap film and that a portion of the pores remains.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜上形成其中形成有孔的盖膜; 在盖膜和电介质膜中形成开口; 在开口内沉积导电材料; 并且在导电材料沉积在开口内部之前形成用于防止导电材料在盖膜上的扩散的扩散阻挡膜，使得扩散阻挡膜的一部分侵入到盖膜中，并且一部分毛孔残留。

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