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1. 发明申请

US20070228401A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070228401A1
公开(公告)日：2007-10-04
申请号：US11731260
申请日：2007-03-30
申请人： Osamu Machida , Masataka Yanagihara , Shinichi Iwakami , Mio Suzuki
发明人： Osamu Machida , Masataka Yanagihara , Shinichi Iwakami , Mio Suzuki
IPC分类号： H01L33/00
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/452 , H01L29/475 , H01L29/7787
摘要： A semiconductor device having: a substrate; nitride-based compound semiconductor layers formed on one main surface of the substrate and made of a nitride-based compound semiconductor; a first electrode formed on the nitride-based compound semiconductor layers and having a Schottky junction with the nitride-based compound semiconductor layers; and a second electrode formed on the nitride-based compound semiconductor layers and subjected to low resistance contact with the nitride-based compound semiconductor layers, wherein the first electrode and substrate are electrically connected through a connection conductor.
摘要翻译：一种半导体器件，具有：基板; 形成在基板的一个主表面上并由氮化物基化合物半导体制成的氮化物基化合物半导体层; 形成在所述氮化物系化合物半导体层上且与所述氮化物系化合物半导体层具有肖特基结的第一电极; 以及形成在所述氮化物系化合物半导体层上并与所述氮化物系化合物半导体层进行低电阻接触的第二电极，其中，所述第一电极和所述基板通过连接导体电连接。

2. 发明申请

US20070196993A1 Semiconductor element 审中-公开
标题翻译：半导体元件
公开(公告)号：US20070196993A1
公开(公告)日：2007-08-23
申请号：US11701327
申请日：2007-02-01
申请人： Shinichi Iwakami , Osamu Machida , Masataka Yanagihara
发明人： Shinichi Iwakami , Osamu Machida , Masataka Yanagihara
IPC分类号： H01L21/8222
CPC分类号： H01L29/872 , H01L29/417 , H01L29/812 , H01L2224/48091 , H01L2924/00014
摘要： A Schottky diode includes a substrate, a channel layer formed on the substrate and made of nitride-based compound semiconductor, an anode electrode and a cathode electrode which constitute an end portion of the current path of the semiconductor element, and a dummy electrode electrically connected to the substrate. The anode electrode is formed to have a Schottky barrier junction with the channel layer. The cathode layer is formed to have a low-resistance contact with the channel layer.
摘要翻译：肖特基二极管包括基板，形成在基板上并由氮化物基化合物半导体构成的沟道层，构成半导体元件的电流路径的端部的阳极电极和阴极电极，以及电连接的虚拟电极到基底。阳极电极形成为与沟道层具有肖特基势垒结。阴极层形成为与沟道层具有低电阻接触。

3. 发明申请

US20060261356A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060261356A1
公开(公告)日：2006-11-23
申请号：US11490328
申请日：2006-07-20
申请人： Shinichi Iwakami , Osamu Machida
发明人： Shinichi Iwakami , Osamu Machida
IPC分类号： H01L33/00
CPC分类号： H01L29/41766 , H01L29/2003 , H01L29/7787 , H01L29/812
摘要： A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.
摘要翻译：一种具有通过缓冲区形成在硅衬底上的GaN基主半导体区的半导体器件。源极，漏极和栅电极形成在主半导体区域上，背面电极形成在衬底的背面。衬底由具有相反导电类型的两个半导体区域构成，其间具有pn结，其有利于漏极和背电极之间更高的耐压能力。

4. 发明授权

US07859018B2 Semiconductor device having nitride semiconductor layer 有权
标题翻译：具有氮化物半导体层的半导体器件
公开(公告)号：US07859018B2
公开(公告)日：2010-12-28
申请号：US11490328
申请日：2006-07-20
申请人： Shinichi Iwakami , Osamu Machida
发明人： Shinichi Iwakami , Osamu Machida
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/41766 , H01L29/2003 , H01L29/7787 , H01L29/812
摘要： A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.
摘要翻译：一种具有通过缓冲区形成在硅衬底上的GaN基主半导体区的半导体器件。源极，漏极和栅电极形成在主半导体区域上，背面电极形成在衬底的背面。衬底由具有相反导电类型的两个半导体区域构成，其间具有pn结，其有利于漏极和背电极之间更高的耐压能力。

5. 发明申请

US20110233538A1 COMPOUND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：化合物半导体器件
公开(公告)号：US20110233538A1
公开(公告)日：2011-09-29
申请号：US13033042
申请日：2011-02-23
申请人： Shinichi Iwakami , Keiichi Ichimaru , Nobuo Kaneko , Masahiro Niizato
发明人： Shinichi Iwakami , Keiichi Ichimaru , Nobuo Kaneko , Masahiro Niizato
IPC分类号： H01L29/02
CPC分类号： H01L29/7787 , H01L29/1029 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： A compound semiconductor device includes a compound semiconductor layer in which a two-dimensional carrier gas layer is formed, the compound semiconductor layer including a carrier travel layer and a carrier supply layer; first and second main electrodes, which are arranged apart from each other on the compound semiconductor layer, and are ohmically connected to the two-dimensional carrier gas layer; a metal oxide semiconductor film arranged on the compound semiconductor layer between the first main electrode and the second main electrode; and a control electrode arranged on the metal oxide semiconductor film, the control electrode including a titanium film that contacts the metal oxide semiconductor film or a titanium-containing compound film that contacts the metal oxide semiconductor film.
摘要翻译：化合物半导体器件包括其中形成二维载气层的化合物半导体层，所述化合物半导体层包括载流子行进层和载流子供应层; 第一和第二主电极，其在化合物半导体层上彼此分开布置，并且与欧姆连接到二维载气层; 在所述第一主电极和所述第二主电极之间配置在所述化合物半导体层上的金属氧化物半导体膜; 以及设置在所述金属氧化物半导体膜上的控制电极，所述控制电极包括与所述金属氧化物半导体膜接触的钛膜或与所述金属氧化物半导体膜接触的含钛化合物膜。

6. 发明授权

US08445942B2 Semiconductor device having metal oxide film 有权
标题翻译：具有金属氧化物膜的半导体器件
公开(公告)号：US08445942B2
公开(公告)日：2013-05-21
申请号：US12544292
申请日：2009-08-20
申请人： Ryohei Baba , Shinichi Iwakami
发明人： Ryohei Baba , Shinichi Iwakami
IPC分类号： H01L29/778
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/205 , H01L29/402
摘要： A semiconductor device includes: a nitride group semiconductor functional layer including a second nitride group semiconductor region on a first nitride group semiconductor region where a two-dimensional carrier gas layer is made, the second nitride group semiconductor region functioning as a barrier layer; a first main electrode electrically connected to one end of the two-dimensional carrier gas layer; a second main electrode electrically connected to the other end of the two-dimensional carrier gas layer; and a metal oxide film placed between the first and second main electrodes, electrically connected to the first main electrode, the first main electrode extends over an upper surface of the metal oxide film.
摘要翻译：半导体器件包括：在形成二维载气层的第一氮化物半导体区域上包括第二氮化物半导体区域的氮化物半导体功能层，第二氮化物半导体区域用作阻挡层; 与所述二维载气层的一端电连接的第一主电极; 电连接到二维载气层的另一端的第二主电极; 以及金属氧化物膜，其位于所述第一和第二主电极之间，与所述第一主电极电连接，所述第一主电极在所述金属氧化物膜的上表面上延伸。

7. 发明申请

US20080087897A1 COMPOUND SEMICONDUCTOR ELEMENT RESISTIBLE TO HIGH VOLTAGE 有权
标题翻译：化合物半导体元件可抵抗高电压
公开(公告)号：US20080087897A1
公开(公告)日：2008-04-17
申请号：US11857458
申请日：2007-09-19
申请人： Shinichi Iwakami
发明人： Shinichi Iwakami
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , H01L29/2003 , H01L29/452 , H01L29/47 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A compound semiconductor element is provided which electrically connects an electrode 3 formed on one main surface 2a of a compound semiconductor region 2 with a substrate 5 to fix an electric potential of substrate 5 at an electric potential of electrode 3, thereby preventing fluctuation in electric potential of substrate 5 under the changing operating condition of the device for stabilization in electric property of the device. Also, formed between compound semiconductor region 2 and substrate 5 is an insulating layer 6 for blocking a leakage current which may flow longitudinally between one main surface 2a of compound semiconductor region 2 and substrate 5 so that sufficiently high withstand voltage property can be given between compound semiconductor region 2 and substrate 5. In addition, formed in compound semiconductor region 2 is a notch 14 which extends in the thickness direction from main surface 2a of compound semiconductor region 2 and reaches at least insulating layer 6, and an insulating protective layer 15 covers a side surface of a conductive film 7 exposed to the notch 14 to prevent occurrence of electric discharge between conductive film 7 and substrate 5 for stable and high withstand voltage.
摘要翻译：提供一种化合物半导体元件，其将形成在化合物半导体区域2的一个主表面2a上的电极3与基板5电连接，以将基板5的电位固定在电极3的电位，从而防止电气在器件的电性能稳定装置的变化的工作条件下，衬底5的电位。另外，形成在化合物半导体区域2和基板5之间的绝缘层6是用于阻挡可能在化合物半导体区域2的一个主表面2a与衬底5之间纵向流动的漏电流的绝缘层6，从而可以在化合物半导体区域2和衬底5之间产生足够高的耐受电压特性化合物半导体区域2和基板5。此外，在化合物半导体区域2中形成的凹口14是从化合物半导体区域2的主面2a向厚度方向延伸的至少至少为绝缘层6的绝缘保护层15的绝缘保护层15，膜7暴露于凹口14，以防止导电膜7和基板5之间的放电发生，从而获得稳定和高耐压。

8. 发明申请

US20070051938A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070051938A1
公开(公告)日：2007-03-08
申请号：US10573458
申请日：2005-08-25
申请人： Koji Otsuka , Shinichi Iwakami
发明人： Koji Otsuka , Shinichi Iwakami
IPC分类号： H01L31/00
CPC分类号： H01L29/872
摘要： A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and provides a Schottky junction with the semiconductor layers is formed on a bottom surface and a side surface of the concave portion. An electrode that is made from metal and provides a low resistance contact with the semiconductor layers and is also in low resistance contact therewith is formed on the bottom surface and side surface of the concave portion. As a result, a semiconductor device is provided in which contact resistance between the electrodes and the semiconductor layers is reduced and high frequency characteristics are improved.
摘要翻译：在作为半导体层和半导体层之间的异质界面的界面附近产生二维载体。两个凹部形成为从主面向界面延伸。在凹部的底表面和侧面上形成由金属制成并与半导体层形成肖特基结的电极。在凹部的底表面和侧表面上形成由金属制成并与半导体层具有低电阻接触并且与其低电阻接触的电极。结果，提供了半导体器件，其中电极和半导体层之间的接触电阻降低，并且提高了高频特性。

9. 发明授权

US08008655B2 Nitride compound semiconductor device including organic semiconductor layer under gate electrode 有权
标题翻译：氮化物化合物半导体器件包括栅电极下的有机半导体层
公开(公告)号：US08008655B2
公开(公告)日：2011-08-30
申请号：US12244046
申请日：2008-10-02
申请人： Shinichi Iwakami
发明人： Shinichi Iwakami
IPC分类号： H01L51/05
CPC分类号： H01L51/0508 , H01L29/42316 , H01L29/7787
摘要： A nitride compound semiconductor device includes a semiconductor layer including a group III nitride compound semiconductor, source and drain electrodes provided on the semiconductor layer, an insulating film provided on the semiconductor layer between the source electrode and the drain electrode, an organic semiconductor layer in contact with the semiconductor layer at an opening provided for the insulating film, and a gate electrode provided on the organic conductive layer at the opening.
摘要翻译：氮化物化合物半导体器件包括：包含III族氮化物化合物半导体的半导体层，设置在半导体层上的源极和漏极;设置在源极和漏极之间的半导体层上的绝缘膜，接触的有机半导体层其中半导体层位于为绝缘膜设置的开口处，以及设置在开口处的有机导电层上的栅电极。

10. 发明授权

US07692298B2 III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact 有权
标题翻译： III-V族氮化物半导体器件包括凹形肖特基接触和欧姆接触
公开(公告)号：US07692298B2
公开(公告)日：2010-04-06
申请号：US10573458
申请日：2005-08-25
申请人： Koji Otsuka , Shinichi Iwakami
发明人： Koji Otsuka , Shinichi Iwakami
IPC分类号： H01L23/48
CPC分类号： H01L29/872
摘要： A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and provides a Schottky junction with the semiconductor layers is formed on a bottom surface and a side surface of the concave portion. An electrode that is made from metal and provides a low resistance contact with the semiconductor layers and is also in low resistance contact therewith is formed on the bottom surface and side surface of the concave portion. As a result, a semiconductor device is provided in which contact resistance between the electrodes and the semiconductor layers is reduced and high frequency characteristics are improved.
摘要翻译：在作为半导体层和半导体层之间的异质界面的界面附近产生二维载体。两个凹部形成为从主面向界面延伸。在凹部的底表面和侧面上形成由金属制成并与半导体层形成肖特基结的电极。在凹部的底表面和侧表面上形成由金属制成并与半导体层具有低电阻接触并且与其低电阻接触的电极。结果，提供了半导体器件，其中电极和半导体层之间的接触电阻降低，并且提高了高频特性。

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