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1. 发明授权

US4892839A Method of manufacturing a semiconductor device with polysilicon resistors and field plate 失效
标题翻译：制造具有多晶硅电阻器和场板的半导体器件的方法
公开(公告)号：US4892839A
公开(公告)日：1990-01-09
申请号：US109533
申请日：1987-10-19
申请人： Shinichi Ito , Hirokazu Kaneda
发明人： Shinichi Ito , Hirokazu Kaneda
IPC分类号： H01L21/225 , H01L21/331 , H01L29/06 , H01L29/40 , H01L29/73 , H01L29/732
CPC分类号： H01L29/405 , H01L21/2257 , H01L29/7304
摘要： A method of manufacturing a semiconductor device in which a base of a second conductivity type is provided in a semiconductor substrate of a first conductivity type, which operates as a collector. An emitter of the first conductivity type is provided in the base, a pn junction between the collector and the base is exposed on the surface of the semiconductor substrate, and the emitter is provided with stabilizing resistors. The method comprises the steps of providing a silicon oxide film over the entire surface of the semiconductor device, and a polysilicon film over both the emitter and a first portion of the pn junction exposed on the surface of the semiconductor substrate, and impurities are diffused into only a second portion of the polysilicon film located over the emitter to reduce the resistance of the second portion of the polysilicon film.
摘要翻译：一种制造半导体器件的方法，其中第二导电类型的基极设置在作为集电极工作的第一导电类型的半导体衬底中。第一导电类型的发射极设置在基极中，集电极和基极之间的pn结露出在半导体衬底的表面上，并且发射极设置有稳定电阻器。该方法包括以下步骤：在半导体器件的整个表面上提供氧化硅膜，以及在半导体衬底的表面上露出的pn结的发射极和第一部分上的多晶硅膜，并且杂质扩散到仅位于发射极上方的多晶硅膜的第二部分，以降低多晶硅膜的第二部分的电阻。

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