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1. 发明申请

US20110018066A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110018066A1
公开(公告)日：2011-01-27
申请号：US12805129
申请日：2010-07-14
申请人： Shinichi Horiba , Nobuyuki Nakamura , Eiji Kitamura
发明人： Shinichi Horiba , Nobuyuki Nakamura , Eiji Kitamura
IPC分类号： H01L27/092 , H01L23/525
CPC分类号： H01L27/0617 , H01L23/5252 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an antifuse element. The semiconductor device includes a first well of a first conductivity type disposed in a semiconductor substrate; a first insulating film on the first well; a first conductive film of the first conductivity type on the first insulating film; and an impurity-introduced region of the first conductivity type. The impurity-introduced region of the first conductivity type in the first well is higher in impurity concentration than the first well. The impurity-introduced region includes a first portion that faces toward the first conductive film through the first insulating film.
摘要翻译：半导体器件包括反熔丝元件。半导体器件包括设置在半导体衬底中的第一导电类型的第一阱; 第一阱上的第一绝缘膜; 第一绝缘膜上的第一导电类型的第一导电膜; 和第一导电类型的杂质导入区域。第一阱中第一导电类型的杂质导入区域的杂质浓度高于第一阱。杂质引入区域包括通过第一绝缘膜朝向第一导电膜的第一部分。

2. 发明授权

US08729642B2 Semiconductor device comprising a gate electrode having an opening 有权
标题翻译：半导体器件包括具有开口的栅电极
公开(公告)号：US08729642B2
公开(公告)日：2014-05-20
申请号：US13252006
申请日：2011-10-03
申请人： Eiji Kitamura , Shinichi Horiba , Nobuyuki Nakamura
发明人： Eiji Kitamura , Shinichi Horiba , Nobuyuki Nakamura
IPC分类号： H01L27/088 , H01L23/52
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region.
摘要翻译：半导体器件包括形成在半导体衬底中的有源区和通过形成在有源区的表面上的栅极绝缘膜在有源区上形成的栅电极。栅电极的周边部分和有源区域的周边部分在平面图中观察时有源区域不被栅电极分割的位置彼此重叠，从而形成重叠区域。

3. 发明授权

US08395232B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08395232B2
公开(公告)日：2013-03-12
申请号：US12805129
申请日：2010-07-14
申请人： Shinichi Horiba , Nobuyuki Nakamura , Eiji Kitamura
发明人： Shinichi Horiba , Nobuyuki Nakamura , Eiji Kitamura
IPC分类号： H01L23/525
CPC分类号： H01L27/0617 , H01L23/5252 , H01L27/092 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an antifuse element. The semiconductor device includes a first well of a first conductivity type disposed in a semiconductor substrate; a first insulating film on the first well; a first conductive film of the first conductivity type on the first insulating film; and an impurity-introduced region of the first conductivity type. The impurity-introduced region of the first conductivity type in the first well is higher in impurity concentration than the first well. The impurity-introduced region includes a first portion that faces toward the first conductive film through the first insulating film.
摘要翻译：半导体器件包括反熔丝元件。半导体器件包括设置在半导体衬底中的第一导电类型的第一阱; 第一阱上的第一绝缘膜; 第一绝缘膜上的第一导电类型的第一导电膜; 和第一导电类型的杂质导入区域。第一阱中第一导电类型的杂质导入区域的杂质浓度高于第一阱。杂质引入区域包括通过第一绝缘膜朝向第一导电膜的第一部分。

4. 发明授权

US09419882B2 Network analyzing system, as well as network analyzing apparatus and network analyzing program, as well as data processing module and data processing program 有权
标题翻译：网络分析系统，网络分析仪器和网络分析程序，以及数据处理模块和数据处理程序
公开(公告)号：US09419882B2
公开(公告)日：2016-08-16
申请号：US14235041
申请日：2012-04-27
申请人： Nobuyuki Nakamura , Satoshi Ikada , Masayuki Muratani
发明人： Nobuyuki Nakamura , Satoshi Ikada , Masayuki Muratani
IPC分类号： H04L12/26 , H04L12/24
CPC分类号： H04L43/0894 , H04L41/0213 , H04L41/069 , H04L41/16 , H04L41/20 , H04L43/026 , H04L43/04 , H04L43/16
摘要： The present invention relates to a network analyzing system that performs analyzing for a network. The network analyzing system includes one or a plurality of data processing modules and a network analysis apparatus, the network analysis apparatus includes a unit for accommodating the data processing modules, a unit for holding data-to-be-analyzed, a unit for storing data processing definition information that defines steps that carry out the processing of the data-to-be-analyzed using the data processing modules, a unit for causing the data processing modules to carry out data processing based on the data processing definition information to obtain a data processing result, and each data processing module includes a unit connecting to the network analysis apparatus, and a unit for carrying out data processing in accordance with a request.
摘要翻译：本发明涉及对网络进行分析的网络分析系统。网络分析系统包括一个或多个数据处理模块和网络分析装置，网络分析装置包括用于容纳数据处理模块的单元，用于保存待分析数据的单元，用于存储数据的单元处理定义信息，其定义使用数据处理模块执行要分析的数据的处理的步骤;用于使数据处理模块基于数据处理定义信息执行数据处理的单元，以获得数据处理结果，并且每个数据处理模块包括连接到网络分析装置的单元和用于根据请求执行数据处理的单元。

5. 发明授权

US09394595B2 High carbon thin steel sheet and method for producing same 有权
标题翻译：高碳薄钢板及其制造方法
公开(公告)号：US09394595B2
公开(公告)日：2016-07-19
申请号：US14117757
申请日：2012-05-16
申请人： Takashi Kobayashi , Nobuyuki Nakamura , Yoshimasa Funakawa
发明人： Takashi Kobayashi , Nobuyuki Nakamura , Yoshimasa Funakawa
IPC分类号： C22C38/44 , C22C38/40 , C21D6/00 , C21D9/46 , C21D1/42 , C21D1/667 , C22C38/00 , C22C38/02 , C22C38/04 , C22C38/06 , C21D8/02 , C22C38/14 , C22C38/18 , C21D1/32
CPC分类号： C22C38/44 , C21D1/32 , C21D1/42 , C21D1/667 , C21D6/00 , C21D8/0226 , C21D8/0263 , C21D9/46 , C21D2211/003 , C21D2211/005 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/14 , C22C38/18 , C22C38/40 , Y02P10/253
摘要： A high carbon steel sheet having a chemical composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol. Al: 0.08% or less, N: 0.02% or less, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the fraction of pro-eutectoid ferrite, among the ferrite, in the whole steel microstructure is 20% or more and less than 50%, the average grain size dc of the cementite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 0.50 to 1.5 μm, and the average grain size ds of the cementite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness satisfies ds/dc≦0.8.
摘要翻译：化学组成为C：0.20〜0.50％，Si：1.0％以下，Mn：2.0％以下，P：0.03％以下，S：0.02％以下的高碳钢板。 Al：0.08％以下，N：0.02％以下，余量由Fe和杂质构成，以质量计，由铁素体和渗碳体构成的微结构，其中先共析铁素体的比例在在整个钢组织中的铁素体为20％以上且小于50％，从钢板厚度的四分之一到板厚中心的区域中的渗碳体的平均粒径dc 为0.50〜1.5μm，从钢板表面到片材厚度四分之一的位置的渗碳体的平均粒径ds满足ds / dc＆nlE; 0.8。

6. 发明授权

US09021252B2 Encrypted-traffic discrimination device and encrypted-traffic discrimination system 有权
标题翻译：加密流量识别装置和加密流量辨别系统
公开(公告)号：US09021252B2
公开(公告)日：2015-04-28
申请号：US12659069
申请日：2010-02-24
申请人： Shingo Ata , Go Hasegawa , Yoshihiro Nakahira , Nobuyuki Nakamura
发明人： Shingo Ata , Go Hasegawa , Yoshihiro Nakahira , Nobuyuki Nakamura
IPC分类号： H04L29/06 , H04L12/851
CPC分类号： H04L63/0428 , H04L47/2441
摘要： An encrypted-traffic discrimination device includes an input interface, a flow discrimination section, a data accumulation section, a selective data calculation section, a calculation result determination section, and an output interface. The flow discrimination section discriminates the input traffic into separate flows based on at least a transmission origin address and a transmission destination address. The data accumulation section accumulates characteristic amount data of the traffic for each of the separate flows. The selective data calculation section executes an evaluation computation utilizing specific data from the characteristic amount data. The calculation result determination section that, based on a calculated evaluation computation value, executes threshold value determination to determine whether or not the traffic is encrypted, and, if the traffic is determined to be encrypted, which encryption format the traffic is encrypted with.
摘要翻译：加密流量判别装置包括输入接口，流量鉴别部，数据存储部，选择性数据计算部，计算结果判定部，输出接口。流检测部分至少基于发送源地址和发送目的地地址将输入业务区分为单独的流。数据累积部累积各流量的流量的特征量数据。选择性数据计算部使用来自特征量数据的特定数据来执行评价计算。计算结果确定部，其基于计算出的评价运算值，执行阈值判定，判定是否加密了业务，并且，如果确定要加密的业务，则加密业务的加密格式。

7. 发明授权

US08692384B2 Semiconductor device with through silicon via and alignment mark 有权
标题翻译：半导体器件带硅通孔和对准标记
公开(公告)号：US08692384B2
公开(公告)日：2014-04-08
申请号：US13427960
申请日：2012-03-23
申请人： Nobuyuki Nakamura
发明人： Nobuyuki Nakamura
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/563 , H01L21/6836 , H01L21/76898 , H01L23/3128 , H01L23/3171 , H01L23/544 , H01L24/04 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2221/68372 , H01L2223/54426 , H01L2224/03002 , H01L2224/0401 , H01L2224/05572 , H01L2224/05599 , H01L2224/05647 , H01L2224/05666 , H01L2224/11005 , H01L2224/1146 , H01L2224/11462 , H01L2224/1147 , H01L2224/13009 , H01L2224/13021 , H01L2224/13022 , H01L2224/13082 , H01L2224/13083 , H01L2224/13099 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/73204 , H01L2224/81132 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544 , H01L2225/06565 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2224/05552 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.
摘要翻译：半导体器件包括：多个彼此堆叠的半导体芯片，所述多个半导体芯片中的每一个具有半导体衬底和布线层; 贯通电极，其在厚度方向上贯穿半导体基板，并且在彼此相邻的半导体芯片之间彼此电连接; 在半导体衬底的厚度方向上穿过半导体衬底并不与其它半导体芯片电连接的导体; 以及在厚度方向上穿透半导体基板的绝缘隔板，形成为环绕导体的环状。

8. 发明授权

US08048237B2 Ultra soft high carbon hot rolled steel sheet and method for manufacturing same 有权
标题翻译：超软高碳热轧钢板及其制造方法
公开(公告)号：US08048237B2
公开(公告)日：2011-11-01
申请号：US12294639
申请日：2007-02-26
申请人： Hideyuki Kimura , Takeshi Fujita , Nobuyuki Nakamura , Naoya Aoki , Masato Sasaki , Satoshi Ueoka , Shunji Iizuka
发明人： Hideyuki Kimura , Takeshi Fujita , Nobuyuki Nakamura , Naoya Aoki , Masato Sasaki , Satoshi Ueoka , Shunji Iizuka
IPC分类号： C22C38/00 , C22C38/22 , C22C38/18 , C22C38/12 , C22C38/14 , C21D8/02 , C21D8/00 , C21D6/00
CPC分类号： B21B3/00 , C21D9/46 , C22C38/02 , C22C38/04
摘要： An ultra soft high carbon hot-rolled steel sheet has excellent workability. The steel sheet is a high carbon hot-rolled steel sheet containing 0.2 to 0.7% C, and has a structure in which mean grain size of ferrite is 20 μm or larger, the volume percentage of ferrite grains having 10 μm or smaller size is 20% or less, mean diameter of carbide is in a range from 0.10 μm to smaller than 2.0 μm, the percentage of carbide grains having 5 or more of aspect ratio is 15% or less, and the contact ratio of carbide is 20% or less.
摘要翻译：超柔软的高碳热轧钢板的加工性优异。该钢板是含有0.2〜0.7％C的高碳热轧钢板，其铁素体的平均粒径为20μm以上的结构，具有10μm以下的铁素体晶粒的体积百分比为20 ％以下，碳化物的平均直径为0.10μm以上且小于2.0μm，纵横比为5以上的碳化物的比例为15％以下，碳化物的接触率为20％以下。

9. 发明申请

US20110048588A1 COLD-ROLLED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：冷轧钢板及其制造方法
公开(公告)号：US20110048588A1
公开(公告)日：2011-03-03
申请号：US12919780
申请日：2009-02-26
申请人： Tetsuya Mega , Nobuyuki Nakamura , Takashi Kobayashi , Yasunobu Nagataki , Takayoshi Kabeya
发明人： Tetsuya Mega , Nobuyuki Nakamura , Takashi Kobayashi , Yasunobu Nagataki , Takayoshi Kabeya
IPC分类号： C21D8/02 , C22C38/04
CPC分类号： C22C38/04 , C21D8/0226 , C21D8/0236 , C21D8/0273 , C21D9/0068 , C21D9/40 , C21D9/46 , C21D2211/005 , C22C38/001 , C22C38/02 , C22C38/06
摘要： A cold-rolled steel sheet has a partially recrystallized grain structure with a degree of unrecrystallization of 25% to 90% and a Rockwell hardness HRB of 83 or more, the cold-rolled steel sheet containing 0.01% to 0.15% C, 0.03% or less Si, 0.10% to 0.70% Mn, 0.025% or less P, 0.025% or less S, 0.01% to 0.05% Al, and 0.008% or less N on a mass basis, the remainder being Fe and unavoidable impurities, wherein the mean diameter of ferrite is 2 to 10 μm and these components satisfy Formula (1): (C %)+0.15×(Mn %)+0.85×(P %)≧0.21, wherein (M %) represents the content (mass percent) of an element M.
摘要翻译：冷轧钢板的不结晶度为25％〜90％，洛氏硬度HRB为83以上的部分再结晶组织，冷轧钢板含有0.01〜0.15％的C，0.03％或少量的Si，0.10〜0.70％的Mn，0.025％以下的P，0.025％以下的S，0.01％〜0.05％的Al，0.008％以下的N，余量为Fe和不可避免的杂质，铁素体的平均直径为2〜10μm，这些成分满足式（1）：（C％）+ 0.15×（Mn％）+ 0.85×（P％）≥0.21，（M％）表示含量（质量％）元素M.

10. 发明申请

US20110014677A1 NOVEL DNA FRAGMENT, RECOMBINANT VECTOR COMPRISING SAME, TRANSFORMANT TRANSFORMED THEREWITH, AND USE THEREOF 失效
标题翻译：新型DNA片段，包含其的重组载体，其变形变体及其用途
公开(公告)号：US20110014677A1
公开(公告)日：2011-01-20
申请号：US12452648
申请日：2008-07-09
申请人： Yuji Hatada , Yukari Ohta , Yuko Hidaka , Nobuyuki Nakamura
发明人： Yuji Hatada , Yukari Ohta , Yuko Hidaka , Nobuyuki Nakamura
IPC分类号： C12N9/02 , C12N9/10 , C12N9/14 , C12N9/88 , C12N9/90 , C12N1/21 , C12N15/63 , C07H21/04
CPC分类号： C12N15/63 , C07K2319/02 , C12N9/2437 , C12N9/2468 , C12N15/70 , C12N15/75 , C12P21/02 , C12Y302/01004 , C12Y302/01081
摘要： A DNA fragment containing a gene which encodes a specific gene regulatory region alone or the gene regulatory region together with a signal peptide; a recombinant vector containing the DNA fragment; a transformant containing the recombinant vector; and a method of producing a recombinant protein by using the transformant. According to the invention, it is possible to produce a protein in a large amount at a high efficiency regardless of the kind of the recombinant protein.
摘要翻译：含有单独编码特定基因调控区域的基因或与信号肽一起的基因调控区域的DNA片段; 含有该DNA片段的重组载体; 含有重组载体的转化体; 以及使用该转化体生产重组蛋白的方法。根据本发明，无论重组蛋白质的种类如何，都可以高效率地生产蛋白质。

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