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1. 发明授权

US08592990B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08592990B2
公开(公告)日：2013-11-26
申请号：US13193154
申请日：2011-07-28
申请人： Shinichi Chikaki , Takahiro Nakayama
发明人： Shinichi Chikaki , Takahiro Nakayama
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L23/53295 , H01L21/02126 , H01L21/022 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02359 , H01L21/76807 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first porous layer that is formed over a substrate and includes a SiO2 skeleton; a second porous layer that is formed immediately above the first porous layer and includes a SiO2 skeleton; a via wiring that is provided in the first porous layer; and a trench wiring that is buried in the second porous layer. The first porous layer has a pore density x1 of 40% or below and the second porous layer has a pore density x2 of (x1+5) % or above.
摘要翻译：半导体器件包括：形成在衬底上并包括SiO 2骨架的第一多孔层; 第二多孔层，其形成在第一多孔层的正上方，并且包括SiO 2骨架; 设置在所述第一多孔层中的通孔布线; 以及埋设在第二多孔层中的沟槽布线。第一多孔层的孔密度x1为40％以下，第二多孔层的孔密度x2为（x1 + 5）％以上。

2. 发明申请

US20070269977A1 Method of forming a multilayer wiring by the use of copper damascene technique 审中-公开
标题翻译：通过使用铜镶嵌技术形成多层布线的方法
公开(公告)号：US20070269977A1
公开(公告)日：2007-11-22
申请号：US11798684
申请日：2007-05-16
申请人： Shinichi Chikaki , Ryotaro Yagi , Yoshinori Shishida , Hirofumi Tanaka , Takahiro Nakayama , Yoko Uchida
发明人： Shinichi Chikaki , Ryotaro Yagi , Yoshinori Shishida , Hirofumi Tanaka , Takahiro Nakayama , Yoko Uchida
IPC分类号： H01L21/4763
CPC分类号： H01L21/76888 , H01L21/76883
摘要： In a formation method of a copper damascene multilayer wiring in a semiconductor integrated circuit device, after performing an oxidation process on a surface of copper, a heating process of 300° C. to 400° C. is performed in a reducing gas atmosphere, or a plasma annealing process is performed in a reducing gas plasma atmosphere.
摘要翻译：在半导体集成电路器件中的铜镶嵌多层布线的形成方法中，在对铜的表面进行氧化处理之后，在还原气体气氛中进行300〜400℃的加热处理，在还原性气体等离子体气氛中进行等离子体退火处理。

3. 发明申请

US20110204519A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110204519A1
公开(公告)日：2011-08-25
申请号：US13125908
申请日：2009-10-22
申请人： Shinichi Chikaki , Takahiro Nakayama
发明人： Shinichi Chikaki , Takahiro Nakayama
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/02337 , H01L21/02359 , H01L21/3105 , H01L21/76814 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers.
摘要翻译：半导体器件包括第一互连，在第一互连上形成的多孔介电层，埋在多孔介电层中并电连接到第一互连的第二互连，以及设置在多孔介电层之间的含碳金属膜并且第二互连并隔离这些层。

4. 发明申请

US20110092071A1 METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL 审中-公开
标题翻译：生产硅酸盐多孔绝缘膜的方法，生产半导体器件的方法和硅酸盐材料
公开(公告)号：US20110092071A1
公开(公告)日：2011-04-21
申请号：US12994832
申请日：2009-05-26
申请人： Keizo Kinoshita , Shinichi Chikaki , Takahiro Nakayama
发明人： Keizo Kinoshita , Shinichi Chikaki , Takahiro Nakayama
IPC分类号： H01L21/311 , C23C26/00 , C09D7/12
CPC分类号： H01L23/5329 , H01L21/02126 , H01L21/02203 , H01L21/3105 , H01L21/76814 , H01L21/7682 , H01L21/76826 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Provided is a method for the effective silylation treatment of a silica-based porous insulating film having a plurality of pores. The method of producing a silylated porous insulating film (204c) includes a process whereby a porous insulating film (204b) having a plurality of pores is formed, and a process wherein a silylating material vapor (210) obtained by vaporizing silylating material containing organic silane compound having a hydrophobic group and polymerization inhibitor which inhibits the auto-polymerization of the organic silane compound is caused to act upon the porous insulating film (204b).
摘要翻译：本发明提供一种有机硅化处理具有多个孔的二氧化硅基多孔绝缘膜的方法。制备甲硅烷基化多孔绝缘膜（204c）的方法包括形成具有多个孔的多孔绝缘膜（204b）的方法，以及通过将含有有机硅烷的甲硅烷基化物质蒸发得到的甲硅烷基化材料蒸气（210）导致抑制有机硅烷化合物的自聚合的具有疏水性基团和阻聚剂的化合物作用于多孔绝缘膜（204b）。

5. 发明申请

US20100221433A1 PROCESS FOR MANUFACTURING HYDROPHOBIZED MICROPOROUS FILM 有权
标题翻译：制造水解微孔膜的方法
公开(公告)号：US20100221433A1
公开(公告)日：2010-09-02
申请号：US12680275
申请日：2008-09-29
申请人： Shinichi Chikaki , Takahiro Nakayama
发明人： Shinichi Chikaki , Takahiro Nakayama
IPC分类号： B05D3/04
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/02359 , H01L21/31058 , H01L21/31695 , H01L21/76826 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A process for manufacturing a hydrophobized microporous film includes: forming an organic silica insulating film 2 on a substrate 1; supplying a gaseous mixture 3 composed of a silylation gas and an inert gas in an apparatus having the substrate 1 disposed therein at a temperature of the substrate 1, the substrate 1 having the organic silica insulating film 2 formed thereon, and the temperature being equal to or higher than a dew point temperature of the silylation gas and equal to or lower than a vaporizing temperature of the silylation gas; stopping the supply of the gaseous mixture 3 into the apparatus; and heating the substrate having the organic silica insulating film 2 formed thereon, so that a hydrophobizing organic silica insulating film, in which the surface of the organic silica insulating film 2 and the surfaces of the pores are hydrophobized, can be obtained with reduced increase in the specific dielectric constant.
摘要翻译：疏水化微孔膜的制造方法包括：在基板1上形成有机二氧化硅绝缘膜2; 在基板1的温度下在其中设置有基板1的设备中提供由甲硅烷基化气体和惰性气体组成的气体混合物3，其上形成有机二氧化硅绝缘膜2的基板1，其温度等于或高于甲硅烷化气体的露点温度，并且等于或低于甲硅烷化气体的汽化温度; 停止将气体混合物3供应到设备中; 并加热形成有有机二氧化硅绝缘膜2的基板，从而可以减少有机二氧化硅绝缘膜2的表面和孔表面疏水化的疏水化有机二氧化硅绝缘膜，比介电常数。

6. 发明授权

US08981563B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08981563B2
公开(公告)日：2015-03-17
申请号：US13125908
申请日：2009-10-22
申请人： Shinichi Chikaki , Takahiro Nakayama
发明人： Shinichi Chikaki , Takahiro Nakayama
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/532 , H01L21/02 , H01L21/3105 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/02337 , H01L21/02359 , H01L21/3105 , H01L21/76814 , H01L21/7682 , H01L21/76825 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers.
摘要翻译：半导体器件包括第一互连，在第一互连上形成的多孔介电层，埋在多孔介电层中并电连接到第一互连的第二互连，以及设置在多孔介电层之间的含碳金属膜并且第二互连并隔离这些层。

7. 发明申请

US20120003841A1 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：生产半导体器件的方法
公开(公告)号：US20120003841A1
公开(公告)日：2012-01-05
申请号：US13256578
申请日：2010-03-18
申请人： Shinichi Chikaki , Takahiro Nakayama
发明人： Shinichi Chikaki , Takahiro Nakayama
IPC分类号： H01L21/31
CPC分类号： H01L23/53238 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes: a step of forming a porous dielectric film on a substrate; a step of disposing the substrate having the porous dielectric film formed thereon inside a chamber; a step of introducing siloxane into the chamber in which the substrate is disposed and heating the substrate to a first temperature; and a step heating the substrate to which the introduced siloxane adheres to a second temperature higher than the first temperature. A pressure inside the chamber is maintained to be equal to or lower than 1 kPa. In the present embodiment, the first temperature is equal to or higher than a temperature at which the pressure inside the chamber is a saturated vapor pressure of the siloxane, and is equal to or lower than a temperature at which a polymerization between the porous dielectric film and the siloxane starts.
摘要翻译：一种制造半导体器件的方法包括：在衬底上形成多孔电介质膜的步骤; 将其上形成有多孔介电膜的基板设置在室内的步骤; 将硅氧烷引入到其中设置衬底的室中并将衬底加热到第一温度的步骤; 以及将引入的硅氧烷粘附到高于第一温度的第二温度的基板的步骤。室内的压力保持在1kPa以下。在本实施方式中，第一温度为室内的压力为硅氧烷的饱和蒸气压的温度以上，且为等于或低于多孔电介质膜硅氧烷开始。

8. 发明授权

US08273410B2 Process for manufacturing hydrophobized microporous film 有权
标题翻译：制造疏水化微孔薄膜的工艺
公开(公告)号：US08273410B2
公开(公告)日：2012-09-25
申请号：US12680275
申请日：2008-09-29
申请人： Shinichi Chikaki , Takahiro Nakayama
发明人： Shinichi Chikaki , Takahiro Nakayama
IPC分类号： C23C16/00 , B05D3/04
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/02359 , H01L21/31058 , H01L21/31695 , H01L21/76826 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A process for manufacturing a hydrophobized microporous film includes: forming an organic silica insulating film 2 on a substrate 1; supplying a gaseous mixture 3 composed of a silylation gas and an inert gas in an apparatus having the substrate 1 disposed therein at a temperature of the substrate 1, the substrate 1 having the organic silica insulating film 2 formed thereon, and the temperature being equal to or higher than a dew point temperature of the silylation gas and equal to or lower than a vaporizing temperature of the silylation gas; stopping the supply of the gaseous mixture 3 into the apparatus; and heating the substrate having the organic silica insulating film 2 formed thereon, so that a hydrophobizing organic silica insulating film, in which the surface of the organic silica insulating film 2 and the surfaces of the pores are hydrophobized, can be obtained with reduced increase in the specific dielectric constant.
摘要翻译：疏水化微孔膜的制造方法包括：在基板1上形成有机二氧化硅绝缘膜2; 在基板1的温度下在其中设置有基板1的设备中提供由甲硅烷基化气体和惰性气体组成的气体混合物3，其上形成有机二氧化硅绝缘膜2的基板1，其温度等于或高于甲硅烷化气体的露点温度，并且等于或低于甲硅烷化气体的汽化温度; 停止将气体混合物3供应到设备中; 并加热形成有有机二氧化硅绝缘膜2的基板，从而可以减少有机二氧化硅绝缘膜2的表面和孔表面疏水化的疏水化有机二氧化硅绝缘膜，比介电常数。

9. 发明授权

US09817217B2 Imaging optical system, camera device, and portable information terminal apparatus 有权
公开(公告)号：US09817217B2
公开(公告)日：2017-11-14
申请号：US15195051
申请日：2016-06-28
申请人： Takahiro Nakayama
发明人： Takahiro Nakayama
IPC分类号： G02B13/04 , G02B13/18 , G02B9/34 , G02B9/60 , G02B13/00
CPC分类号： G02B13/04 , G02B9/34 , G02B9/60 , G02B13/004 , G02B13/0045 , G02B13/006
摘要： An imaging optical system includes, in order from the object side, a first lens group, an aperture stop, and a second lens group. The first lens group includes, in order from the object side, a negative lens of a biconcave shape and a positive meniscus lens with a convex surface facing the object side. The second lens group includes, in order from the object side, a second-front lens group and a second-rear lens group, the second-rear lens group having a positive refractive power as a whole. The second-front lens group includes a cemented lens formed by combing a negative lens with a concave surface facing the object side and a positive lens.

10. 发明授权

US08419227B2 Illumination device 有权
标题翻译：照明装置
公开(公告)号：US08419227B2
公开(公告)日：2013-04-16
申请号：US12482159
申请日：2009-06-10
申请人： Takahiro Nakayama
发明人： Takahiro Nakayama
IPC分类号： F21V7/04
CPC分类号： H04N1/03 , H04N1/02815 , H04N1/0285 , H04N1/02865 , H04N1/0303 , H04N1/0305 , H04N1/0311 , H04N1/0312
摘要： To provide an illumination device in which a point light source and a reflective member based on a light weight, cheap resin material is used, the illumination device has high precision and is strong to environmental variations when in a state assembled as a unit and is easily moldable as a part, a plurality of point light sources (111) is arrayed, a first reflective member (112b, 112c, 112d) is disposed along an outgoing direction of light of the point light sources, a second reflective member (112e) is disposed in a surface opposed to a light emitting surface of the point light source in an orthogonal direction, the point light sources are moved integrally with a part or a whole of the first and the second reflective member, the illumination device irradiates an irradiation surface by light from the point light sources, rib shaped bodies (112a) are disposed in a light passageway side of the first reflective member, the rib shaped bodies includes a reflective surface and is situated at a position of an approximately equal distance from two adjacent point light sources, the rib shaped bodies are disposed to be approximately orthogonal against a straight line connecting the two adjacent point light sources.
摘要翻译：为了提供一种照明装置，其中使用基于重量轻的廉价树脂材料的点光源和反射构件，照明装置具有高精度并且在组装为一个单元的状态下易于环境变化，并且容易排列成多个点状光源（111），沿着点光源的出射方向配置第一反射部件（112b，112c，112d），第二反射部件（112e）为设置在与所述点光源的发光面相对的表面的正交方向上，所述点光源与所述第一反射构件和所述第二反射构件的一部分或整体一体地移动，所述照明装置通过来自点光源的光，肋状体（112a）设置在第一反射构件的光通路侧，肋状体包括反射面，位于距离两个相邻点光源大致相等的距离的位置，肋状体被布置成与连接两个相邻点光源的直线大致正交。

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