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1. 发明授权

US5254215A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5254215A
公开(公告)日：1993-10-19
申请号：US792221
申请日：1991-11-12
申请人： Shingo Terakado , Osamu Kitamura
发明人： Shingo Terakado , Osamu Kitamura
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01J37/32339 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A dry etching method capable of performing fine patterning. A sample substrate is fixedly disposed on a table in a reactant chamber. Gas plasma produced by a gas plasma generator is introduced into the reactant chamber, and excitation light, that is, light capable of exciting inner shell electrons of constituent atoms of the substrate, is irradiated onto the substrate from above the substrate. In the optical path of the excitation light is disposed a mask. The substrate is irradiated with the light in response to a pattern designated by the mask. The excitation light has an energy for exciting electrons of constituent atoms of the substrate. Upon arrival of the light in etched regions, the electrons of the substrate are excited. As a result, etching is effected by the contact of the excited electrons with the gas plasma, and the rate of this etching is greatly enhanced. Since the electrons of the substrate in masked areas are not excited, the masked areas become hardly subjected to etching by the contact of the gas plasma, whereby the pattern of the mask is transferred to the substrate with high accuracy, whereby fine patterns are formed.
摘要翻译：能够进行精细图案化的干蚀刻方法。样品基板固定地设置在反应物室中的工作台上。由气体等离子体发生器产生的气体等离子体被引入到反应物室中，激发光（即，能够激发衬底的组成原子的内壳电子的光）从衬底上方照射到衬底上。在激发光的光路中设置掩模。响应于由掩模指定的图案，用光照射基板。激发光具有用于激发基板的组成原子的电子的能量。当光在蚀刻区域到达时，衬底的电子被激发。结果，通过激发的电子与气体等离子体的接触来实现蚀刻，并且该蚀刻的速率被大大增强。由于掩模区域中的基板的电子不被激发，所以掩模区域难以通过气体等离子体的接触进行蚀刻，由此掩模的图案以高精度传递到基板，从而形成精细的图案。

2. 发明授权

US5122503A Superconducting material and method of producing same 失效
标题翻译：超导材料及其制造方法
公开(公告)号：US5122503A
公开(公告)日：1992-06-16
申请号：US684463
申请日：1991-04-09
申请人： Masaru Yamano , Atsuo Mizukami , Masao Nakao , Shingo Terakado , Ryohkan Yuasa , Masaaki Nemoto , Hiromi Mukaida , Kazuaki Shikiti
发明人： Masaru Yamano , Atsuo Mizukami , Masao Nakao , Shingo Terakado , Ryohkan Yuasa , Masaaki Nemoto , Hiromi Mukaida , Kazuaki Shikiti
IPC分类号： C01G3/00 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2419 , C04B35/4508 , Y10S505/725 , Y10S505/739 , Y10S505/742 , Y10S505/78
摘要： The present invention relates to a superconducting material that is, substances having compositions expressed by empirical formulae Y.sub.1-x Ba.sub.x CuO.sub.3, YBa.sub.2 Cu.sub.3 O.sub.7 and LnBa.sub.2 Cu.sub.3 O.sub.7 and critical temperatures of 90 K. or more, and to a method of producing the same in which for example Y.sub.2 O.sub.3, BaCO.sub.3 and CuO are blended at a mixture molar ratio of 1:2:6 and the resulting mixture is molded under pressure followed by slowly cooling in an oxidizing atmosphere.
摘要翻译：本发明涉及一种超导材料，其是具有由经验式Y1-xBaxCuO3，YBa2Cu3O7和LnBa2Cu3O7表示的组成以及90K以上的临界温度的组成的物质及其制造方法，其中例如Y 2 O 3，BaCO 3 和CuO以1:2:6的混合摩尔比共混，并将所得混合物在压力下成型，然后在氧化气氛中缓慢冷却。

3. 发明授权

US5183531A Dry etching method 失效
公开(公告)号：US5183531A
公开(公告)日：1993-02-02
申请号：US565264
申请日：1990-08-09
申请人： Shingo Terakado
发明人： Shingo Terakado
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/368
CPC分类号： H01L21/32139 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/31144 , H01L21/32136
摘要： A dry etching method for etching a substrate such as semiconductors. A vacuum ultraviolet radiation or soft X-rays is used as a photon beam source for generating a reaction of dry etching, and also an etching gas in introduced into a reaction chamber after being activated by a microwave radiation, whereby a reaction of the etching gas with a substrate takes place at a region of the processing material to which the electromagnetic wave is irradiated, and a dry etching is accomplished at the region etched by the reaction of the etching gas.

4. 发明授权

US5569569A Stencil mask 失效
标题翻译：模板面膜
公开(公告)号：US5569569A
公开(公告)日：1996-10-29
申请号：US377306
申请日：1995-01-24
申请人： Takashi Goto , Shingo Terakado
发明人： Takashi Goto , Shingo Terakado
IPC分类号： G03F1/20 , G03F1/68 , H01L21/302 , G03F9/00
CPC分类号： G03F1/20
摘要： A stencil mask for use in a photochemical reaction process includes a path extending between the rear and front surfaces thereof. The path is used with a window for passing photons so as to supply a reactive medium and discharge an exhaust medium containing reaction products. Further, the path also serves as a space for separating an object from a pattern on a mask substrate. The path has a depth which is smaller than a minimum value attained by a semiconductor manufacturing process.
摘要翻译：用于光化学反应过程的模板掩模包括在其后表面和前表面之间延伸的路径。该路径用于通过光子的窗口，以供应反应介质并排出含有反应产物的排气介质。此外，该路径还用作用于将物体与掩模基板上的图案分离的空间。路径的深度小于通过半导体制造工艺获得的最小值。

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