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1. 发明授权

US4853342A Method of manufacturing semiconductor integrated circuit device having transistor 失效
标题翻译：具有晶体管的半导体集成电路器件的制造方法
公开(公告)号：US4853342A
公开(公告)日：1989-08-01
申请号：US300224
申请日：1989-01-24
申请人： Shin-ichi Taka , Jiro Ohshima
发明人： Shin-ichi Taka , Jiro Ohshima
IPC分类号： H01L29/73 , H01L21/20 , H01L21/331 , H01L21/336 , H01L21/8222 , H01L27/06 , H01L29/08 , H01L29/10 , H01L29/732 , H01L29/78
CPC分类号： H01L29/66287 , H01L21/2022 , H01L29/0826 , H01L29/1004 , H01L29/1087 , H01L29/66242 , H01L29/66651 , H01L29/732 , Y10S148/01 , Y10S148/011
摘要： A transistor is formed according to the solid phase epitaxial growth which is one of the semiconductor integrated circuit device manufacturing techniques. A low-concentration impurity region is formed by selective solid phase epitaxial growth instead of using an epitaxial substrate. The solid phase epitaxial growth is performed twice, when a collector region is formed and when a base region is formed. The depth of collector and base regions are determined by the thickness of the solid phase growth layers, respectively.
摘要翻译：根据作为半导体集成电路器件制造技术之一的固相外延生长形成晶体管。通过选择性固相外延生长而不是使用外延衬底来形成低浓度杂质区。当形成集电极区域和形成基极区域时，进行固相外延生长两次。集电极和基极区域的深度分别由固相生长层的厚度决定。

2. 发明授权

US4975381A Method of manufacturing super self-alignment technology bipolar transistor 失效
标题翻译：制造超自对准技术双极晶体管的方法
公开(公告)号：US4975381A
公开(公告)日：1990-12-04
申请号：US492488
申请日：1990-03-12
申请人： Shin-ichi Taka , Jiro Ohshima
发明人： Shin-ichi Taka , Jiro Ohshima
IPC分类号： H01L29/73 , H01L21/285 , H01L21/331 , H01L21/60 , H01L29/732
CPC分类号： H01L21/76897 , H01L21/28525 , H01L29/66272 , Y10S148/011 , Y10S148/124
摘要： This invention discloses a method of manufacturing an SST bipolar transistor, and the manufacturing method is capable of defining the size of a base region of the SST bipolar transistor. An insulating film and a spacer film serving as a spacer are sequentially formed in a bipolar transistor forming region on the main surface of a semiconductor substrate. Thereafter, the spacer film is patterned into a spacer film pattern for defining the size of the base region. A second insulating film, a base electrode pattern and a third insulating film are sequentially formed on the spacer film pattern. A first opening which reaches the spacer film pattern through the second insulating film, the base electrode pattern and the third insulating film is formed. The spacer film pattern is etched from the first opening to form a second opening having a diameter larger than that of the first opening. The insulating film exposed in the second opening is etched. The size of the base region on the major surface of the semiconductor substrate is defined by the size of the second opening.
摘要翻译：本发明公开了一种制造SST双极型晶体管的方法，该制造方法能够限定SST双极型晶体管的基极区域的尺寸。在半导体基板的主表面上的双极晶体管形成区域中依次形成用作间隔物的绝缘膜和间隔膜。此后，间隔膜被图案化成用于限定基部区域的尺寸的间隔膜图案。在间隔膜图案上依次形成第二绝缘膜，基极图案和第三绝缘膜。形成通过第二绝缘膜到达间隔膜图案的第一开口，基极图案和第三绝缘膜。从第一开口蚀刻间隔膜图案以形成直径大于第一开口直径的第二开口。在第二开口中暴露的绝缘膜被蚀刻。半导体基板的主表面上的基极区域的尺寸由第二开口的尺寸限定。

3. 发明授权

US4717682A Method of manufacturing a semiconductor device with conductive trench sidewalls 失效
标题翻译：制造具有导电沟槽侧壁的半导体器件的方法
公开(公告)号：US4717682A
公开(公告)日：1988-01-05
申请号：US830928
申请日：1986-02-19
申请人： Shin-ichi Taka , Jiro Ohshima , Masahiro Abe , Masaharu Aoyama
发明人： Shin-ichi Taka , Jiro Ohshima , Masahiro Abe , Masaharu Aoyama
IPC分类号： H01L21/76 , H01L21/265 , H01L21/302 , H01L21/3065 , H01L21/74 , H01L21/283
CPC分类号： H01L21/743
摘要： A method of manufacturing a semiconductor device, comprising the steps of sequentially forming a buried region and an epitaxial layer on a major surface of a semiconductor substrate, forming a conductive layer along an annular trench extending to the buried region, filling the annular trench with an insulating material and forming a functional element in said epitaxial layer surrounded by said buried region and said insulating material within said annular trench. In this method, the step of forming the conductive layer along the annular trench is carried out by the steps of forming an annular trench extending through said buried region, and depositing a conductive layer on only a side wall surface of said annular trench.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底的主表面上依次形成掩埋区域和外延层，沿着延伸到掩埋区域的环形沟槽形成导电层，用环形沟槽填充绝缘材料，并在由所述掩埋区域围绕的所述外延层中形成功能元件，并在所述环形沟槽内形成所述绝缘材料。在该方法中，沿着环形沟槽形成导电层的步骤是通过形成延伸穿过所述掩埋区域的环形沟槽以及仅在所述环形沟槽的侧壁表面上沉积导电层的步骤来执行的。

4. 发明授权

US5102826A Method of manufacturing a semiconductor device having a silicide layer 失效
标题翻译：制造具有硅化物层的半导体器件的方法
公开(公告)号：US5102826A
公开(公告)日：1992-04-07
申请号：US610216
申请日：1990-11-09
申请人： Jiro Ohshima , Shin-ichi Taka , Toshiyo Motozima , Hiroshi Naruse
发明人： Jiro Ohshima , Shin-ichi Taka , Toshiyo Motozima , Hiroshi Naruse
IPC分类号： H01L21/265 , H01L21/28 , H01L21/285
CPC分类号： H01L21/26506 , H01L21/28518 , Y10S148/106
摘要： According to the method of manufacturing a semiconductor device of the present invention, an insulation film is formed on a silicon substrate, and a resist film having a predetermined pattern is formed on the insulation film, followed by forming an opening on the insulation film with the resist film performing as a mask. Then, an impurity having conductivity are implanted into said silicon substrate with the resist film performing as a mask and silicon ions are implanted into the silicon substrate with the resist film performing as a mask. After that, the resist film is removed. Further, a refractory metal film which covers at least the opening is formed. Moveover, a diffusion layer which causes electrical activation of the impurity having conductivity is formed by annealing, followed by formation a silicide layer at where the surfaces of the silicon substrate and the metal film meet.
摘要翻译：根据本发明的半导体器件的制造方法，在硅衬底上形成绝缘膜，在绝缘膜上形成具有预定图案的抗蚀剂膜，然后在绝缘膜上形成开口作为掩模的抗蚀膜。然后，将具有导电性的杂质注入到所述硅衬底中，并以抗蚀剂膜作为掩模将硅离子注入到硅衬底中，并将硅离子注入到硅衬底中。之后，除去抗蚀剂膜。此外，形成至少覆盖开口的难熔金属膜。通过退火形成引起具有导电性的杂质的电活化的扩散层，随后在硅衬底和金属膜的表面相遇处形成硅化物层。

5. 发明授权

US4871685A Method of manufacturing bipolar transistor with self-aligned external base and emitter regions 失效
标题翻译：制造具有自对准外部基极和发射极区域的双极晶体管的方法
公开(公告)号：US4871685A
公开(公告)日：1989-10-03
申请号：US230823
申请日：1988-08-11
申请人： Shin-ichi Taka , Jiro Ohshima
发明人： Shin-ichi Taka , Jiro Ohshima
IPC分类号： H01L29/73 , H01L21/033 , H01L21/331 , H01L21/763 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/033 , H01L21/763 , Y10S148/01 , Y10S148/011
摘要： A metal layer is formed by selective CVD method on an emitter region formed by using a field oxide film as a mask. Opening for ion-implanting an impurity for forming external base region is formed in the field oxide film by utilizing the metal layer and a metal layer creep up a bird's beak of the field oxide film as masks. An impurity is doped in a semiconductor substrate through the opening formed in the field oxide film to form external base region. The distance between the emitter region and external base region is controlled by a length of the metal layer creep up the bird's beak.
摘要翻译：通过选择性CVD法在通过使用场氧化膜作为掩模形成的发射极区域上形成金属层。通过利用金属层在场氧化膜中形成用于离子注入用于形成外部基极区域的杂质的开口，并且金属层将场氧化膜的鸟喙蠕变成掩模。通过形成在场氧化膜中的开口在半导体衬底中掺杂杂质以形成外部基极区。发射极区域和外部基极区域之间的距离由金属层的长度在鸟的喙上蠕动控制。

6. 发明授权

US4766086A Method of gettering a semiconductor device and forming an isolation region therein 失效
标题翻译：吸收半导体器件并在其中形成隔离区域的方法
公开(公告)号：US4766086A
公开(公告)日：1988-08-23
申请号：US20758
申请日：1987-03-02
申请人： Jiro Ohshima , Shin-ichi Taka , Toshiyo Ito , Masaharu Aoyama
发明人： Jiro Ohshima , Shin-ichi Taka , Toshiyo Ito , Masaharu Aoyama
IPC分类号： H01L29/73 , H01L21/316 , H01L21/322 , H01L21/331 , H01L21/761 , H01L29/732 , H01L21/265 , H01L21/225
CPC分类号： H01L21/3221 , H01L21/761 , Y10S148/024
摘要： In a method of manufacturing a semiconductor device according to the present invention, a given position of a thermal oxide film formed on a monocrystalline silicon layer is opened to expose a surface of the monocrystalline silicon layer to serve as a getter site, a polycrystalline silicon layer is deposited on the thermal oxide film and the surface of the monocrystalline silicon layer, and the polycrystalline silicon layer is oxidized to convert the surface of the monocrystalline silicon layer directly contacting the polycrystalline silicon layer into an oxide film by thermal oxidation. That is, the position of interface between the oxide film and the monocrystalline silicon layer is shifted into the original monocrystalline silicon layer. During thermal oxidation of the polycrystalline silicon layer, a plurality of crystal defects to serve as getter sites are generated deeper than those generated by a conventional implagetter method in the monocrystalline silicon layer. In addition, the crystal defects generated in the manner described above do not extend to the surrounding region by subsequent annealing so that a region of the crystal defects is limited.
摘要翻译：在根据本发明的半导体器件的制造方法中，形成在单晶硅层上的热氧化膜的给定位置被打开以暴露单晶硅层的表面以用作吸气部位，多晶硅层沉积在热氧化膜和单晶硅层的表面上，并且多晶硅层被氧化，以通过热氧化将直接与多晶硅层接触的单晶硅层的表面转化为氧化膜。也就是说，氧化膜和单晶硅层之间的界面的位置被转移到原始的单晶硅层中。在多晶硅层的热氧化过程中，产生比用于单晶硅层中常规的投影仪方法产生的多个晶体缺陷作为吸气位置。此外，以上述方式产生的晶体缺陷通过随后的退火不会延伸到周围区域，使得晶体缺陷的区域受到限制。

7. 发明授权

US4415372A Method of making transistors by ion implantations, electron beam irradiation and thermal annealing 失效
标题翻译：通过离子注入，电子束照射和热退火制造晶体管的方法
公开(公告)号：US4415372A
公开(公告)日：1983-11-15
申请号：US313332
申请日：1981-10-20
申请人： Yutaka Koshino , Toshio Yonezawa , Takashi Ajima , Jiro Ohshima
发明人： Yutaka Koshino , Toshio Yonezawa , Takashi Ajima , Jiro Ohshima
IPC分类号： H01L21/263 , H01L21/265 , H01L21/324
CPC分类号： H01L21/324 , H01L21/2636 , H01L21/26513 , Y10S148/046
摘要： The invention provides a method for fabricating a semiconductor device which comprises the steps of ion-implanting an impurity into a monocrystalline semiconductor substrate; irradiating the region into which the impurity ions have been implanted with an accelerated electron beam under the conditions that the acceleration voltage is 20 to 200 KeV, and the current is 0.01 to 1 mA and the exposure dose is 10.sup.20 to 10.sup.15 /cm.sup.2 ; and carrying out annealing to form a semiconductor region of one conductivity type. According to the present invention, a semiconductor device can be fabricated which has fewer lattice defects and in which the lifetime of the carriers is long.
摘要翻译：本发明提供一种制造半导体器件的方法，该方法包括以下步骤：将杂质离子注入到单晶半导体衬底中; 在加速电压为20〜200KeV，电流为0.01〜1mA，曝光量为1020〜1015 / cm2的条件下，用加速电子束照射杂质离子注入的区域; 并进行退火以形成一种导电类型的半导体区域。根据本发明，可以制造具有更少的晶格缺陷并且其中载体的寿命长的半导体器件。

8. 发明授权

US4853760A Semiconductor device having insulating layer including polyimide film 失效
标题翻译：具有包括聚酰亚胺膜的绝缘层的半导体器件
公开(公告)号：US4853760A
公开(公告)日：1989-08-01
申请号：US89959
申请日：1987-08-25
申请人： Masahiro Abe , Masaharu Aoyama , Jiro Ohshima , Takashi Ajima
发明人： Masahiro Abe , Masaharu Aoyama , Jiro Ohshima , Takashi Ajima
IPC分类号： H01L21/768 , H01L21/3105 , H01L21/3115 , H01L21/312 , H01L23/522
CPC分类号： H01L21/3105 , H01L21/31155 , H01L2924/0002
摘要： A semiconductor device has a passivation layer including a polyimide film. Argon ions are implanted in the polyimide film to convert it into an electrically stable insulating film.
摘要翻译：半导体器件具有包括聚酰亚胺膜的钝化层。将氩离子注入到聚酰亚胺膜中以将其转化为电稳定的绝缘膜。

9. 发明授权

US4479830A Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker 失效
标题翻译：使用外延再生长突起作为对准标记的半导体器件的制造方法
公开(公告)号：US4479830A
公开(公告)日：1984-10-30
申请号：US462201
申请日：1983-01-31
申请人： Yutaka Koshino , Jiro Ohshima , Takashi Ajima , Toshio Yonezawa
发明人： Yutaka Koshino , Jiro Ohshima , Takashi Ajima , Toshio Yonezawa
IPC分类号： H01L21/20 , H01L21/265 , H01L23/544
CPC分类号： H01L23/544 , H01L21/2022 , H01L21/26506 , H01L21/2652 , H01L2223/54453 , H01L2924/0002
摘要： A method for manufacturing a semiconductor device is shown which includes a step of ion implanting an impurity into an impurity-region formation region of a semiconductor substrate. Before or after the ion implantation step, silicon ions are implanted in a dose of 1.times.10.sup.13 to 1.times.10.sup.15 /cm.sup.2 into the impurity-region formation region and then the silicon ions so implanted are subjected to an activation treatment to form an epitaxial grown protrusion on the surface of the substrate. The protrusion is used as an alignment mark in the subsequent mask alignment step for photolithography.
摘要翻译：示出了制造半导体器件的方法，其包括将杂质离子注入到半导体衬底的杂质区形成区域中的步骤。在离子注入步骤之前或之后，将硅离子以1×10 13至1×10 15 / cm 2的剂量注入杂质区形成区域，然后将如此注入的硅离子进行活化处理，以在表面上形成外延生长突起的基底。在随后的用于光刻的掩模对准步骤中，该突起用作对准标记。

10. 发明授权

US4515642A Method of forming deep aluminum doped silicon by implanting Al and Si ions through alumina layer and device formed thereby 失效
标题翻译：通过氧化铝层注入Al和Si离子形成深铝掺杂硅的方法和由此形成的器件
公开(公告)号：US4515642A
公开(公告)日：1985-05-07
申请号：US525484
申请日：1983-08-22
申请人： Takashi Ajima , Jiro Ohshima , Yutaka Koshino
发明人： Takashi Ajima , Jiro Ohshima , Yutaka Koshino
IPC分类号： H01L21/22 , H01L21/265 , H01L21/266 , H01L21/316
CPC分类号： H01L21/02178 , H01L21/02263 , H01L21/22 , H01L21/26506 , H01L21/2652 , H01L21/3162
摘要： In a method of producing a semiconductor device, an alumina layer is formed directly on a principal surface of a silicon substrate; aluminum and silicon are ion-implanted through the alumina layer into said substrate; and the substrate is thereafter annealed. The ion-implanted silicon yields better crystalline structure and increases the solid solubility limit of aluminum.
摘要翻译：在制造半导体器件的方法中，氧化铝层直接形成在硅衬底的主表面上; 铝和硅通过氧化铝层离子注入到所述衬底中; 然后退火基板。离子注入的硅产生更好的晶体结构并增加铝的固溶度极限。

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