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    • 9. 发明授权
    • Organic semiconductor thin film transistor and method of fabricating the same
    • 有机半导体薄膜晶体管及其制造方法
    • US08716696B2
    • 2014-05-06
    • US11476819
    • 2006-06-29
    • Chang-Wook Han
    • Chang-Wook Han
    • H01L29/08
    • H01L51/107G02F1/1368H01L51/0541H01L51/055
    • A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.
    • 具有薄膜晶体管的衬底包括衬底上的缓冲层,缓冲层上的源电极和漏电极,在源极和漏极之间暴露的缓冲层的一部分,源极和漏极上的小的有机半导体层 电极,与缓冲层的露出部分接触的有机半导体层,有机半导体层上的栅极绝缘层,栅极绝缘层具有与有机半导体层基本相同的尺寸,栅极绝缘层上的栅电极, 在包括栅电极的衬底的表面上的钝化层; 以及钝化层上的像素电极,所述像素电极电连接到所述漏电极。