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1. 发明申请

US20210301419A1 METHOD FOR PRODUCING GaN LAMINATE SUBSTRATE 有权
公开(公告)号：US20210301419A1
公开(公告)日：2021-09-30
申请号：US17266178
申请日：2019-08-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Yoshihiro Kubota , Kazutoshi Nagata
IPC分类号： C30B25/18 , H01L21/02 , H01L21/78 , C30B29/40 , C30B33/06 , C30B31/22
摘要： The present invention includes: transferring a C-plane sapphire thin film 1t having an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate 11 and covering the surface of the C-plane sapphire thin film 1t with a surface treatment layer 11a made of AlN; having GaN grow epitaxially on the surface treatment layer 11a; ion-implanting a GaN film 13; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate 12; performing peeling at an ion implantation region 13ion in the GaN film 13 and transferring a GaN thin film 13a onto the support substrate 12; and obtaining a GaN laminate substrate 10.

2. 发明授权

US10103021B2 Thermally oxidized heterogeneous composite substrate and method for manufacturing same 有权
公开(公告)号：US10103021B2
公开(公告)日：2018-10-16
申请号：US14366125
申请日：2013-01-11
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shoji Akiyama , Yuji Tobisaka , Kazutoshi Nagata
IPC分类号： H01L21/324 , H01L21/02 , H01L21/762 , H01L29/06 , H01L29/786
摘要： A thermally oxidized heterogeneous composite substrate provided with a single crystal silicon film on a handle substrate, said heterogeneous composite substrate being obtained by, prior to a thermal oxidization treatment at a temperature exceeding 850° C., conducting an intermediate heat treatment at 650-850° C. and then conducting the thermal oxidization treatment at a temperature exceeding 850° C. According to the present invention, a thermally oxidized heterogeneous composite substrate with a reduced number of defects after thermal oxidization can be obtained.

3. 发明授权

US11001036B2 Sapphire composite base material and method for producing the same 有权
公开(公告)号：US11001036B2
公开(公告)日：2021-05-11
申请号：US16062707
申请日：2016-12-16
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Kazutoshi Nagata , Yoshihiro Kubota
IPC分类号： B32B17/06 , B32B37/00 , C03C27/00 , C30B33/06 , C30B29/20 , B32B17/10 , C30B33/04 , B32B7/12 , B32B37/12 , B32B37/18 , B32B38/00 , C03C17/27 , C03C17/32 , C30B31/22
摘要： A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

4. 发明申请

US20140235032A1 METHOD FOR PRODUCING TRANSPARENT SOI WAFER 审中-公开
标题翻译：生产透明硅片的方法
公开(公告)号：US20140235032A1
公开(公告)日：2014-08-21
申请号：US14346878
申请日：2012-10-11
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/76256
摘要： The method for producing a transparent SOI wafer is provided and includes treating a bonded wafer at a first temperature of 150 to 300° C. as a first heat treatment; cutting off an unbonded portion of the bonded wafer by irradiating a visible light laser from a silicon wafer side of the heated bonded wafer to a boundary between the bonded surface and an unbonded circumferential surface, while keeping an angle of 60 to 90° between the incident light and a radial direction of the silicon wafer; subjecting the silicon wafer of the bonded wafer having the unbonded portion cut off to grinding, polishing, or etching to form a silicon film; and heat-treating the bonded wafer having the silicon film formed at a second temperature of 300 to 500° C. as a second heat treatment which is higher than the first temperature.
摘要翻译：提供了制造透明SOI晶片的方法，并且包括在150至300℃的第一温度下处理接合的晶片作为第一热处理; 通过从被加热的接合晶片的硅晶片侧的可见光激光照射到接合表面和未键合的圆周表面之间的边界处，同时在事件之间保持60至90°的角度来切断接合晶片的未结合部分光和径向方向; 使具有未结合部分的接合晶片的硅晶片经过研磨，抛光或蚀刻以形成硅膜; 对作为高于第一温度的第二热处理的在300〜500℃的第二温度下形成的具有硅膜的接合晶片进行热处理。

5. 发明授权

US11932936B2 Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrate 有权
公开(公告)号：US11932936B2
公开(公告)日：2024-03-19
申请号：US17628745
申请日：2020-06-16
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Yoshihiro Kubota , Kazutoshi Nagata
IPC分类号： C30B25/18 , C23C16/34 , C30B29/38
CPC分类号： C23C16/34 , C30B25/18 , C30B29/38
摘要： The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

6. 发明授权

US09646873B2 Method for producing SOS substrates, and SOS substrate 有权
公开(公告)号：US09646873B2
公开(公告)日：2017-05-09
申请号：US14416759
申请日：2013-07-18
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeru Konishi , Yoshihiro Kubota , Makoto Kawai , Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762 , H01L21/86 , H01L29/786
CPC分类号： H01L21/76254 , H01L21/86 , H01L29/78657
摘要： A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate (1) and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining an SOS substrate (8) having a silicon layer (6) on the sapphire substrate (4), by detaching the silicon substrate in the ion-injection region (3). This method is characterized in that the orientation of the sapphire substrate (4) is a C-plane having an off-angle of 1 degree or less.

7. 发明申请

US20150179506A1 METHOD FOR PRODUCING SOS SUBSTRATES, AND SOS SUBSTRATE 有权
标题翻译：用于生产基体的方法和基底
公开(公告)号：US20150179506A1
公开(公告)日：2015-06-25
申请号：US14416759
申请日：2013-07-18
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeru Konishi , Yoshihiro Kubota , Makoto Kawai , Shoji Akiyama , Kazutoshi Nagata
IPC分类号： H01L21/762 , H01L21/86
CPC分类号： H01L21/76254 , H01L21/86 , H01L29/78657
摘要： A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate (1) and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining an SOS substrate (8) having a silicon layer (6) on the sapphire substrate (4), by detaching the silicon substrate in the ion-injection region (3). This method is characterized in that the orientation of the sapphire substrate (4) is a C-plane having an off-angle of 1 degree or less.
摘要翻译：一种可以并入半导体生产线中的SOS衬底的制造方法，能够生产缺陷少，缺陷不变的SOS衬底，高度可重现的方法，或换句话说，生产SOS的方法基板：通过从硅衬底（1）的表面注入离子形成离子注入区域（3）; 将硅衬底（1）的离子注入表面和蓝宝石衬底（4）的表面直接或绝缘膜（2）彼此粘合; 然后通过分离离子注入区域（3）中的硅衬底，获得在蓝宝石衬底（4）上具有硅层（6）的SOS衬底（8）。该方法的特征在于，蓝宝石基板（4）的取向为偏角为1度以下的C面。

8. 发明申请

US20140322546A1 THERMALLY OXIDIZED HETEROGENEOUS COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：热氧化异构复合基材及其制造方法
公开(公告)号：US20140322546A1
公开(公告)日：2014-10-30
申请号：US14366125
申请日：2013-01-11
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shoji Akiyama , Yuji Tobisaka , Kazutoshi Nagata
IPC分类号： H01L21/02 , H01L21/762 , H01L29/06
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/324 , H01L21/7624 , H01L21/76251 , H01L29/0642 , H01L29/78603
摘要： A thermally oxidized heterogeneous composite substrate provided with a single crystal silicon film on a handle substrate, said heterogeneous composite substrate being obtained by, prior to a thermal oxidization treatment at a temperature exceeding 850° C., conducting an intermediate heat: treatment at 650-850° C. and then conducting the thermal oxidization treatment at a temperature exceeding 850° C.According to the present invention, a thermally oxidized heterogeneous composite substrate with a reduced number of defects after thermal oxidization can be obtained.
摘要翻译：一种在手柄基板上设置有单晶硅膜的热氧化异质复合基板，所述非均相复合基板在超过850℃的热氧化处理之前，在650℃以上进行中间热处理， 850℃，然后在超过850℃的温度下进行热氧化处理。根据本发明，可以获得热氧化后缺陷数量减少的热氧化异相复合基材。

9. 发明授权

US11479876B2 Method for producing GaN laminate substrate having front surface which is Ga polarity surface 有权
公开(公告)号：US11479876B2
公开(公告)日：2022-10-25
申请号：US17266178
申请日：2019-08-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Yoshihiro Kubota , Kazutoshi Nagata
IPC分类号： C30B25/18 , C30B29/40 , C30B31/22 , C30B33/06 , H01L21/02 , H01L21/78
摘要： The present invention includes: transferring a C-plane sapphire thin film 1t having an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate 11 and covering the surface of the C-plane sapphire thin film 1t with a surface treatment layer 11a made of AlN; having GaN grow epitaxially on the surface treatment layer 11a; ion-implanting a GaN film 13; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate 12; performing peeling at an ion implantation region 13ion in the GaN film 13 and transferring a GaN thin film 13a onto the support substrate 12; and obtaining a GaN laminate substrate 10.

10. 发明授权

US10756254B2 Composite substrate and method of manufacturing composite substrate 有权
公开(公告)号：US10756254B2
公开(公告)日：2020-08-25
申请号：US16339910
申请日：2017-10-05
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Masayuki Tanno , Kazutoshi Nagata , Shoji Akiyama , Koji Kato
IPC分类号： H01L41/253 , H01L41/187 , H01L41/312 , H03H3/08 , H03H9/02 , H03H9/25
摘要： An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.

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