专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050236030A1 Photoelectric conversion device and method for manufacturing the same 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20050236030A1
公开(公告)日：2005-10-27
申请号：US10998190
申请日：2004-11-24
申请人： Shin Sugawara , Hideki Hakuma , Atsuo Hatate , Akiko Komoda , Hisao Arimune
发明人： Shin Sugawara , Hideki Hakuma , Atsuo Hatate , Akiko Komoda , Hisao Arimune
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/035281 , H01L31/03529 , H01L31/18 , Y02E10/50
摘要： A photoelectric conversion device has a structure in which a plurality of crystalline semiconductor particles (3) of one conductivity type each of which has a semiconductor portion (4) of the opposite conductivity type on its surface are joined to a substrate 1 serving as a lower electrode. The substrate (1) and the semiconductor portion (4) are disposed in a state of being separated by a separation portion (6). An insulator (2) is formed between the adjoining crystalline semiconductor particles (3) so as to cover the surface of the substrate (1) and the lower part of the semiconductor portion (4) and so as to expose the upper part of the semiconductor portion (4). An upper electrode (5) is formed so as to cover the insulator (2) and the upper part of the semiconductor portion (4). A short circuit between the upper electrode (5) and the substrate (1) serving as a lower electrode which is caused by the semiconductor portion (4) can be prevented by providing the separation portion (6). Therefore, the photoelectric conversion device can have high conversion efficiency and high productivity.
摘要翻译：光电转换装置具有如下结构：其中一个导电类型的多个结晶半导体颗粒（3）在其表面上具有相反导电类型的半导体部分（4）被接合到用作下部的基板1 电极。基板（1）和半导体部分（4）以分离部分（6）分开的状态设置。在邻接的结晶半导体颗粒（3）之间形成绝缘体（2），以覆盖基板（1）的表面和半导体部分（4）的下部，以便露出半导体的上部部分（4）。上电极（5）形成为覆盖绝缘体（2）和半导体部分（4）的上部。通过设置分离部（6），能够防止由上述半导体部（4）引起的上部电极（5）与作为下部电极的基板（1）之间的短路。因此，光电转换装置可以具有高转换效率和高生产率。

2. 发明申请

US20060118898A1 Photoelectric conversion device and method of manufacturing the same 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20060118898A1
公开(公告)日：2006-06-08
申请号：US11283609
申请日：2005-11-17
申请人： Kouichi Uchimoto , Jun Fukuda , Hideki Hakuma , Shin Sugawara , Hisao Arimune
发明人： Kouichi Uchimoto , Jun Fukuda , Hideki Hakuma , Shin Sugawara , Hisao Arimune
IPC分类号： H01L31/06
CPC分类号： H01L31/1804 , H01L31/02167 , H01L31/0288 , H01L31/035281 , H01L31/03529 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a photoelectric conversion device in which a plurality of p-type crystal semiconductor particles 4 are joined to one main surface of a conductive substrate 2. A boron concentration in a junction of a lower part of each of the p-type crystal semiconductor particles 4 with the conductive substrate 2 is higher than a boron concentration in a portion, other than the junction, of the p-type crystal semiconductor particle 4. The junction is a p+ layer having a high impurity concentration. The p+ layer allows p-type carriers to be collected, thereby making it possible to improve a BFS effect.
摘要翻译：公开了一种光电转换装置，其中多个p型晶体半导体颗粒4接合到导电基板2的一个主表面。每个p型晶体半导体颗粒的下部的接合中的硼浓度导电性基板2的厚度比p型结晶半导体粒子4以外的部分的硼浓度高。结是具有高杂质浓度的p +层。 p +层允许收集p型载体，从而可以提高BFS效应。

3. 发明授权

US07829782B2 Photovoltaic conversion device, optical power generator and manufacturing method of photovoltaic conversion device 失效
标题翻译：光伏转换装置，光功率发生器及光伏转换装置的制造方法
公开(公告)号：US07829782B2
公开(公告)日：2010-11-09
申请号：US11113813
申请日：2005-04-25
申请人： Hideki Hakuma , Kenichi Okada , Kenji Tomita , Hisao Arimune
发明人： Hideki Hakuma , Kenichi Okada , Kenji Tomita , Hisao Arimune
IPC分类号： H01L31/042
CPC分类号： H01L31/03529 , H01L31/035281 , H01L31/068 , Y02E10/547
摘要： To provide an easy-to-manufacture, high-quality photovoltaic conversion device and an optical power generator and also to provide a manufacturing method with high production efficiency.To realize these, a photovoltaic conversion device is manufactured by a manufacturing method of a photovoltaic conversion device comprising steps of: (1) joining a lot of semiconductor particles 10 to a substrate 1; (2) forming a protective film 6 comprised of an oxide film, nitriding film, or oxynitriding film of a semiconductor constituting the semiconductor particle 10 on the surface of the semiconductor particle 10 except the junction where the semiconductor article 10 is joined to the substrate1; (3) forming an insulator 4 in a lower part between the adjoining semiconductor particles 10 on the substrate 1; (4) removing an upper part of the protective film 6 to allow an upper part of the semiconductor particle 10 to be exposed; and (5) forming an upper electrode 5 on the surface of the exposed upper part (connection area S) of the semiconductor particle 10 and the surface of the insulator 4.
摘要翻译：提供易于制造，优质的光伏转换装置和光发电机，并且提供具有高生产效率的制造方法。为了实现这些，通过光电转换装置的制造方法制造光电转换装置，包括以下步骤：（1）将大量半导体颗粒10接合到基板1; （2）在半导体颗粒10的与半导体产品10接合到基板1的连接处的半导体颗粒10的表面上形成由构成半导体颗粒10的半导体的氧化物膜，氮化膜或氮氧化膜构成的保护膜6; （3）在基板1上的相邻的半导体颗粒10之间的下部形成绝缘体4; （4）除去保护膜6的上部，使半导体粒子10的上部露出; 和（5）在半导体颗粒10的暴露的上部（连接区域S）的表面和绝缘体4的表面上形成上部电极5。

4. 发明申请

US20050247338A1 Photovoltaic conversion device, optical power generator and manufacturing method of photovoltaic conversion device 失效
标题翻译：光伏转换装置，光功率发生器及光伏转换装置的制造方法
公开(公告)号：US20050247338A1
公开(公告)日：2005-11-10
申请号：US11113813
申请日：2005-04-25
申请人： Hideki Hakuma , Kenichi Okada , Kenji Tomita , Hisao Arimune
发明人： Hideki Hakuma , Kenichi Okada , Kenji Tomita , Hisao Arimune
IPC分类号： H01L31/04 , H01L31/00 , H01L31/0352 , H01L31/068
CPC分类号： H01L31/03529 , H01L31/035281 , H01L31/068 , Y02E10/547
摘要： To provide an easy-to-manufacture, high-quality photovoltaic conversion device and an optical power generator and also to provide a manufacturing method with high production efficiency. To realize these, a photovoltaic conversion device is manufactured by a manufacturing method of a photovoltaic conversion device comprising steps of: (1) joining a lot of semiconductor particles 10 to a substrate 1; (2) forming a protective film 6 comprised of an oxide film, nitriding film, or oxynitriding film of a semiconductor constituting the semiconductor particle 10 on the surface of the semiconductor particle 10 except the junction where the semiconductor article 10 is joined to the substrate1; (3) forming an insulator 4 in a lower part between the adjoining semiconductor particles 10 on the substrate 1; (4) removing an upper part of the protective film 6 to allow an upper part of the semiconductor particle 10 to be exposed; and (5) forming an upper electrode 5 on the surface of the exposed upper part (connection area S) of the semiconductor particle 10 and the surface of the insulator 4.
摘要翻译：提供易于制造，优质的光伏转换装置和光发电机，并且提供具有高生产效率的制造方法。为了实现这些，通过光电转换装置的制造方法制造光电转换装置，包括以下步骤：（1）将大量半导体颗粒10接合到基板1; （2）在半导体颗粒10的与半导体产品10接合到基板1的接合部分的外表面上形成由构成半导体颗粒10的半导体的氧化物膜，氮化膜或氮氧化膜构成的保护膜6 ; （3）在基板1上的相邻的半导体颗粒10之间的下部形成绝缘体4; （4）除去保护膜6的上部，使半导体粒子10的上部露出; 和（5）在半导体颗粒10的暴露的上部（连接区域S）的表面和绝缘体4的表面上形成上部电极5。

5. 发明申请

US20130074925A1 THIN FILM SOLAR CELL 有权
标题翻译：薄膜太阳能电池
公开(公告)号：US20130074925A1
公开(公告)日：2013-03-28
申请号：US13702912
申请日：2011-06-10
申请人： Hideki Hakuma , Hiroki Sugimoto , Yoshiaki Tanaka
发明人： Hideki Hakuma , Hiroki Sugimoto , Yoshiaki Tanaka
IPC分类号： H01L31/0224
CPC分类号： H01L31/022433 , H01L31/022425 , H01L31/0322 , H01L31/03923 , H01L31/056 , Y02E10/52 , Y02E10/541
摘要： Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate (1), a backside surface electrode layer (2) formed on the substrate (1), a p-type light-absorbing layer (3) formed on the backside surface electrode layer (2), and an n-type transparent conductive film (5) formed on the p-type light-absorbing layer (3). Voids (6) are formed at the interface of the backside surface electrode layer (2) and the p-type light-absorbing layer (3).
摘要翻译：公开了一种具有高光电转换效率的薄膜太阳能电池，并且设置有基板（1），形成在基板（1）上的背面电极层（2），p型光吸收层形成在背面电极层（2）上的n型透明导电膜（5）和形成在p型光吸收层（3）上的n型透明导电膜。在背面电极层（2）和p型光吸收层（3）的界面形成空隙（6）。

6. 发明申请

US20130146137A1 CIS-BASED THIN FILM SOLAR CELL 有权
标题翻译：基于CIS的薄膜太阳能电池
公开(公告)号：US20130146137A1
公开(公告)日：2013-06-13
申请号：US13702458
申请日：2011-06-16
申请人： Takuya Morimoto , Hiroki Sugimoto , Hideki Hakuma
发明人： Takuya Morimoto , Hiroki Sugimoto , Hideki Hakuma
IPC分类号： H01L31/0224
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/0322 , H01L31/046 , H01L31/0463 , H01L31/0749 , Y02E10/541
摘要： A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.
摘要翻译：基于CIS的薄膜太阳能电池具有由图案（P1）分割的背面电极层，并且在基板上依次形成CIS系的光吸收层和透明导电膜。背面电极层包括与基于CIS的光吸收层接触的表面上的中间层，中间层由构成背面电极层的金属的化合物和构成CIS的第VI族元素组成基光吸收层; 中间层包括形成在上表面上的第一中间层部分和形成在面向图案（P1）的侧表面上的第二中间层部分; 并且第二中间层部分的膜厚度大于第一中间层部分的膜厚度。

7. 发明申请

US20110067755A1 METHOD FOR MANUFACTURING CIS-BASED THIN FILM SOLAR CELL 审中-公开
标题翻译：用于制造基于CIS的薄膜太阳能电池的方法
公开(公告)号：US20110067755A1
公开(公告)日：2011-03-24
申请号：US12993232
申请日：2009-05-19
申请人： Hideki Hakuma , Yoshiaki Tanaka , Satoru Kuriyagawa
发明人： Hideki Hakuma , Yoshiaki Tanaka , Satoru Kuriyagawa
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/0322 , C23C14/185 , C23C14/3414 , C23C14/5866 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02579 , H01L21/02614 , H01L21/02631 , H01L21/02658 , H01L31/0323 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a CIS-based thin film solar cell that achieves high photoelectric conversion efficiency comprises: forming a backside electrode layer on a substrate; forming a p-type CIS-based light absorbing layer thereon; and further forming an n-type transparent and electrically conductive film. The above-mentioned forming a p-type CIS-based light absorbing layer comprises: forming a metal precursor film (30a) at least comprising a first metal layer (31, 32) containing a I group element and a second metal layer (33) containing a III group element; and selenizing and/or sulfurizing the metal precursor film, and the above-mentioned forming the metal precursor film includes forming either one of the first metal layer (31, 32) or the second metal layer (33) of at least two layers including a layer (31) that contains an alkali metal and a layer (32) that substantially does not contain the alkali metal.
摘要翻译：实现高光电转换效率的CIS系薄膜太阳能电池的制造方法包括：在基板上形成背面电极层; 在其上形成p型CIS基光吸收层; 并进一步形成n型透明导电膜。上述形成p型CIS系的光吸收层包括：形成至少包含含有I族元素的第一金属层（31,32）和第二金属层（33）的金属前体膜（30a）含有III族元素; 并且对金属前体膜进行硒化和/或硫化，并且上述形成金属前体膜包括形成至少两层的第一金属层（31,32）或第二金属层（33）中的任一个，包括含有碱金属的层（31）和基本上不含碱金属的层（32）。

8. 发明申请

US20100311202A1 PROCESS FOR PRODUCING LIGHT ABSORBING LAYER IN CIS BASED THIN-FILM SOLAR CELL 有权
标题翻译：在CIS基薄膜太阳能电池中生产光吸收层的方法
公开(公告)号：US20100311202A1
公开(公告)日：2010-12-09
申请号：US12745116
申请日：2008-11-28
申请人： Hideki Hakuma , Yuri Yamaguchi , Katsuya Tabuchi , Katsumi Kushiya
发明人： Hideki Hakuma , Yuri Yamaguchi , Katsuya Tabuchi , Katsumi Kushiya
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A treatment object containing any one of Cu/Ga, Cu/In and Cu—Ga/In is held in a heated state at a temperature T1 for a time Δt1 in such a state that a selenium source is introduced, thereby forming a selenide. Thereafter, a sulfur source is introduced to replace the atmosphere in the system with a sulfur atmosphere. In this state, the treatment object is held in a heated state at a temperature T2 for a time Δt2. The temperature of the treatment object is then decreased to T3, and, at that temperature, the treatment object is held in a heated state for a time Δt3.
摘要翻译：将包含Cu / Ga，Cu / In和Cu-Ga / In中的任一种的处理对象在导入硒源的状态下在T1的温度下保持一段时间＆lt; Dgr; t1，从而形成硒化物此后，引入硫源以用硫气氛代替系统中的气氛。在这种状态下，处理对象在温度T2下保持在加热状态一段时间＆lt; Dgr; t2。然后将处理对象的温度降低至T3，并且在该温度下，将处理对象保持在加热状态一段时间＆lt; Dgr; t3。

9. 发明申请

US20100210064A1 METHOD FOR MANUFACTURING CIS-BASED THIN FILM SOLAR CELL 有权
标题翻译：用于制造基于CIS的薄膜太阳能电池的方法
公开(公告)号：US20100210064A1
公开(公告)日：2010-08-19
申请号：US12671068
申请日：2009-05-18
申请人： Hideki Hakuma , Yoshiaki Tanaka , Satoru Kuriyagawa
发明人： Hideki Hakuma , Yoshiaki Tanaka , Satoru Kuriyagawa
IPC分类号： H01L31/032
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0323 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light absorbing layer easily and with good controllability, a backside electrode layer (2) is formed on a substrate (1). Then, a p-type CIS-based light absorbing layer (3) is formed on backside electrode layer (2), and then an n-type transparent and electroconductive film (5) is formed on this p-type CIS-based light absorbing layer (3). At this time, the backside electrode layer (2) is constituted by forming a first electrode layer (21) using a backside electrode material in which an alkali metal is mixed and, then forming a second electrode layer (22) using the backside electrode material that does not substantially contain the alkali metal.
摘要翻译：为了制造可以容易地且具有良好的可控性的碱性元素添加碱金属元素而能够实现高光电转换效率的CIS型薄膜太阳能电池，在基板（1）上形成背面电极层（2）。然后，在背面电极层（2）上形成p型CIS系的光吸收层（3），然后在该p型CIS系吸光层上形成n型透明导电膜（5）层（3）。此时，背面电极层（2）通过使用其中混入碱金属的背面电极材料形成第一电极层（21），然后使用背面电极材料形成第二电极层（22）其基本上不含有碱金属。

10. 发明授权

US09269841B2 CIS-based thin film solar cell 有权
标题翻译：基于CIS的薄膜太阳能电池
公开(公告)号：US09269841B2
公开(公告)日：2016-02-23
申请号：US13702458
申请日：2011-06-16
申请人： Takuya Morimoto , Hiroki Sugimoto , Hideki Hakuma
发明人： Takuya Morimoto , Hiroki Sugimoto , Hideki Hakuma
IPC分类号： H01L31/0224 , H01L31/0749 , H01L31/046 , H01L31/0463 , H01L31/032
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/0322 , H01L31/046 , H01L31/0463 , H01L31/0749 , Y02E10/541
摘要： A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.
摘要翻译：基于CIS的薄膜太阳能电池具有由图案（P1）分割的背面电极层，并且在基板上依次形成CIS系的光吸收层和透明导电膜。背面电极层包括与基于CIS的光吸收层接触的表面上的中间层，中间层由构成背面电极层的金属的化合物和构成CIS的第VI族元素组成基光吸收层; 中间层包括形成在上表面上的第一中间层部分和形成在面向图案（P1）的侧表面上的第二中间层部分; 并且第二中间层部分的膜厚度大于第一中间层部分的膜厚度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式