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1. 发明授权

US08049325B2 Integrated circuit devices having printed circuit boards therein with staggered bond fingers that support improved electrical isolation 有权
标题翻译：具有印刷电路板的集成电路器件具有交错的键合指状件，其支持改进的电隔离
公开(公告)号：US08049325B2
公开(公告)日：2011-11-01
申请号：US12472725
申请日：2009-05-27
申请人： Shin Mu-Seob , Tae-Hun Kim , Min-Gi Hong , Shin Kim , Tae-Hun Yoon
发明人： Shin Mu-Seob , Tae-Hun Kim , Min-Gi Hong , Shin Kim , Tae-Hun Yoon
IPC分类号： H01L23/538
CPC分类号： H01L23/13 , H01L23/49816 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L2224/04042 , H01L2224/05001 , H01L2224/05009 , H01L2224/05554 , H01L2224/0557 , H01L2224/05571 , H01L2224/16145 , H01L2224/29339 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/4824 , H01L2224/48465 , H01L2224/48472 , H01L2224/49109 , H01L2224/49175 , H01L2224/73215 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06562 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01021 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/14 , H01L2924/15151 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/05599 , H01L2224/05099
摘要： An integrated circuit substrate includes an integrated circuit chip having a plurality of electrically conductive pads on a surface thereof and a printed circuit board mounted to the integrated circuit chip. The printed circuit board includes an alternating arrangement of first and second electrically conductive bond fingers. These first and second bond fingers are elevated at first and second different heights, respectively, relative to the plurality of electrically conductive pads. The printed circuit board also includes a first plurality of electrically insulating pedestals supporting respective ones of the first electrically conductive bond fingers at elevated heights relative to the second electrically conductive bond fingers. First and second pluralities of electrical interconnects (e.g., wires, beam leads) are also provided. The first plurality of electrical interconnects operate to electrically connect first ones of the plurality of electrically conductive pads to respective ones of the first electrically conductive bond fingers. The second plurality of electrical interconnects electrically connect second ones of the plurality of electrically conductive pads to respective ones of the second electrically conductive bond fingers.
摘要翻译：集成电路基板包括在其表面上具有多个导电焊盘的集成电路芯片和安装到集成电路芯片的印刷电路板。印刷电路板包括第一和第二导电键合指状物的交替布置。这些第一和第二粘结指相对于多个导电垫分别在第一和第二不同的高度处升高。印刷电路板还包括第一多个电绝缘基座，其相对于第二导电粘合指状件在升高的高度处支撑相应的第一导电键合指状物。还提供了第一和第二多个电互连（例如，电线，光束引线）。第一多个电互连操作以将多个导电焊盘中的第一个导电焊盘电连接到相应的第一导电焊接指状物。所述第二多个电互连将所述多个导电焊盘中的第二导电焊盘电连接到所述第二导电焊接指中的相应导电焊盘。

2. 发明授权

US08027189B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08027189B2
公开(公告)日：2011-09-27
申请号：US12487731
申请日：2009-06-19
申请人： Tae-Hun Yoon , Hyuck-Soo Yoon
发明人： Tae-Hun Yoon , Hyuck-Soo Yoon
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C8/08 , G11C13/0038 , G11C13/0069 , G11C2013/0078
摘要： A nonvolatile memory device includes a plurality of programming current driving units configured to supply memory cells with a programming current corresponding to a write data, a common programming current controlling unit configured to generate a common control voltage for controlling the programming current and a switching unit configured to transfer the common control voltage to the programming current driving unit selected among the plurality of programming current driving units by a plurality of driving selection signals.
摘要翻译：一种非易失性存储器件包括：多个编程电流驱动单元，被配置为向存储单元提供与写数据相对应的编程电流;公共编程电流控制单元，被配置为产生用于控制编程电流的公共控制电压;以及配置通过多个驱动选择信号将公共控制电压传送到在多个编程电流驱动单元中选择的编程电流驱动单元。

3. 发明授权

US08139427B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08139427B2
公开(公告)日：2012-03-20
申请号：US12488653
申请日：2009-06-22
申请人： Tae-Hun Yoon , Joo-Ae Lee
发明人： Tae-Hun Yoon , Joo-Ae Lee
IPC分类号： G11C7/00
CPC分类号： G11C7/062 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2207/063
摘要： A nonvolatile memory device includes a data sense amplifier configured to supply a data detection current to a memory cell and detect a data detection voltage having a voltage level corresponding to a resistance of the memory cell, a first switching element configured to selectively transfer the data detection current to the memory cell, and a second switching element configured to be turned on simultaneously with the first switching element to selectively transfer the data detection current to the memory cell. The first switching element and the second switching element have a complementary voltage transfer characteristic.
摘要翻译：非易失性存储器件包括：数据读出放大器，被配置为向存储单元提供数据检测电流，并检测具有与存储单元的电阻对应的电压电平的数据检测电压;第一开关元件，被配置为选择性地传输数据检测以及第二开关元件，其被配置为与第一开关元件同时导通，以选择性地将数据检测电流传送到存储单元。第一开关元件和第二开关元件具有互补电压传递特性。

4. 发明申请

US20100290274A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20100290274A1
公开(公告)日：2010-11-18
申请号：US12488653
申请日：2009-06-22
申请人： Tae-Hun Yoon , Joo-Ae Lee
发明人： Tae-Hun Yoon , Joo-Ae Lee
IPC分类号： G11C11/00 , G11C7/02 , G11C7/06
CPC分类号： G11C7/062 , G11C13/0004 , G11C13/004 , G11C2013/0054 , G11C2207/063
摘要： A nonvolatile memory device includes a data sense amplifier configured to supply a data detection current to a memory cell and detect a data detection voltage having a voltage level corresponding to a resistance of the memory cell, a first switching element configured to selectively transfer the data detection current to the memory cell, and a second switching element configured to be turned on simultaneously with the first switching element to selectively transfer the data detection current to the memory cell. The first switching element and the second switching element have a complementary voltage transfer characteristic.
摘要翻译：非易失性存储器件包括：数据读出放大器，被配置为向存储单元提供数据检测电流，并检测具有与存储单元的电阻对应的电压电平的数据检测电压;第一开关元件，被配置为选择性地传输数据检测以及第二开关元件，其被配置为与第一开关元件同时导通，以选择性地将数据检测电流传送到存储单元。第一开关元件和第二开关元件具有互补电压传递特性。

5. 发明申请

US20100290273A1 Nonvolatile Memory Device 有权
标题翻译：非易失性存储器件
公开(公告)号：US20100290273A1
公开(公告)日：2010-11-18
申请号：US12487731
申请日：2009-06-19
申请人： Tae-Hun Yoon , Hyuck-Soo Yoon
发明人： Tae-Hun Yoon , Hyuck-Soo Yoon
IPC分类号： G11C11/00 , G11C5/14 , G11C7/00
CPC分类号： G11C13/0004 , G11C8/08 , G11C13/0038 , G11C13/0069 , G11C2013/0078
摘要： A nonvolatile memory device includes a plurality of programming current driving units configured to supply memory cells with a programming current corresponding to a write data, a common programming current controlling unit configured to generate a common control voltage for controlling the programming current and a switching unit configured to transfer the common control voltage to the programming current driving unit selected among the plurality of programming current driving units by a plurality of driving selection signals.
摘要翻译：一种非易失性存储器件包括：多个编程电流驱动单元，被配置为向存储单元提供与写数据相对应的编程电流;公共编程电流控制单元，被配置为产生用于控制编程电流的公共控制电压;以及配置通过多个驱动选择信号将公共控制电压传送到在多个编程电流驱动单元中选择的编程电流驱动单元。

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