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1. 发明授权

US06373099B1 Method of manufacturing a surrounding gate type MOFSET 失效
标题翻译：制造周围栅极型MOSFET的方法
公开(公告)号：US06373099B1
公开(公告)日：2002-04-16
申请号：US09252077
申请日：1999-02-18
申请人： Shin Kikuchi , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda
发明人： Shin Kikuchi , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda
IPC分类号： H01L31062
CPC分类号： H01L27/115 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要翻译：一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

2. 发明授权

US5598037A Semiconductor device with a contact member made of semiconductor material having a columnar structure 失效
标题翻译：具有由具有柱状结构的半导体材料制成的接触构件的半导体器件
公开(公告)号：US5598037A
公开(公告)日：1997-01-28
申请号：US404746
申请日：1995-03-15
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L27/02 , H01L29/10
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要翻译：一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

3. 发明授权

US5918115A Method of manufacturing a surrounding gate type MOSFET 失效
公开(公告)号：US5918115A
公开(公告)日：1999-06-29
申请号：US901936
申请日：1997-07-29
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L21/332
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

4. 发明授权

US5466961A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US5466961A
公开(公告)日：1995-11-14
申请号：US872295
申请日：1992-04-22
申请人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
发明人： Shin Kikuchi , Mamoru Miyawaki , Genzo Monma , Hayao Ohzu , Shunsuke Inoue , Yoshio Nakamura , Takeshi Ichikawa , Osamu Ikeda , Tetsunobu Kohchi
IPC分类号： H01L27/115 , H01L27/02 , H01L29/10
CPC分类号： H01L27/115 , H01L2924/0002
摘要： A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要翻译：一种半导体器件，包括：绝缘栅型晶体管，其具有形成在半导体衬底的主侧上的柱状半导体区域，形成在柱状半导体区域的侧表面上的栅电极，同时插入栅极绝缘膜和分别形成的主电极区域形成在柱状半导体区域的下方; 以及形成在上主电极区域上并且可以被电断开的存储元件。

5. 发明授权

US5541454A Semiconductor device containing electrostatic capacitive element and method for manufacturing same 失效
标题翻译：含有静电电容元件的半导体器件及其制造方法
公开(公告)号：US5541454A
公开(公告)日：1996-07-30
申请号：US478115
申请日：1995-06-07
申请人： Shunsuke Inoue , Yukihiko Sakashita , Yoshio Nakamura , Shin Kikuchi , Hiroshi Yuzurihara
发明人： Shunsuke Inoue , Yukihiko Sakashita , Yoshio Nakamura , Shin Kikuchi , Hiroshi Yuzurihara
IPC分类号： H01L27/108 , H01L23/48 , H01L23/52
CPC分类号： H01L27/10829 , H01L2924/0002
摘要： A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film.
摘要翻译：半导体器件包括由在半导体衬底上形成的Al区域，形成在所述Al区域的表面上的Al氧化物膜和与所述Al区域相对的电极组成的电容器，插入所述Al氧化物膜。

6. 发明授权

US07714919B2 Solid-state image pickup device and camera 有权
标题翻译：固态图像拾取装置和相机
公开(公告)号：US07714919B2
公开(公告)日：2010-05-11
申请号：US11130160
申请日：2005-05-17
申请人： Shunsuke Inoue , Shin Kikuchi
发明人： Shunsuke Inoue , Shin Kikuchi
IPC分类号： H04N3/14 , H04N5/225 , H04N5/217 , H04N5/235
CPC分类号： H04N5/378 , H04N5/343 , H04N5/347
摘要： A solid-state image pickup device includes an adder adding signals from pixels to achieve a high S/N, while performing both static image and moving image pickup. The device has a pixel unit having pixels arranged two-dimensionally and outputs pixel signals derived by photoelectric conversion. The device operates in a first mode of reading a pixel signal of every pixel, and a second mode of adding and reading a plurality of pixel signals. Variable gain column amplifiers perform readout at different gains in the first and second modes. The device also has output lines where output signals from the pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the output lines. The gain at the time of readout in the second mode is higher than the gain at the time of readout in the first mode.
摘要翻译：固态图像拾取装置包括一个加法器，用于附加来自像素的信号以实现高S / N，同时执行静态图像和运动图像拾取。该装置具有像素单元，其具有二维布置的像素，并且输出通过光电转换导出的像素信号。该装置以读取每个像素的像素信号的第一模式和添加和读取多个像素信号的第二模式工作。可变增益列放大器在第一和第二模式下以不同的增益执行读出。该装置还具有分别输出来自排列在一行中的像素的输出信号的输出线，并且可变增益放大器中的至少一个连接到每个输出线。在第二模式中读出时的增益高于在第一模式中读出时的增益。

7. 发明申请

US20050259167A1 Solid-state image pickup device and camera 有权
标题翻译：固态图像拾取装置和相机
公开(公告)号：US20050259167A1
公开(公告)日：2005-11-24
申请号：US11130160
申请日：2005-05-17
申请人： Shunsuke Inoue , Shin Kikuchi
发明人： Shunsuke Inoue , Shin Kikuchi
IPC分类号： H01L27/146 , H04N5/335 , H04N5/347 , H04N5/357 , H04N5/374 , H04N5/217
CPC分类号： H04N5/378 , H04N5/343 , H04N5/347
摘要： In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode.
摘要翻译：在具有从多个像素添加信号的装置的固体摄像装置中，本发明实现了高S / N，并且实现了适用于静态图像拾取和运动图像拾取两者的固态图像拾取装置。固体摄像装置是固体摄像装置，其具有像素单元，具有二维排列的多个像素，并输出通过光电转换得到的像素信号，并具有第一读取模式每个像素的像素信号，以及添加和读取多个像素信号的第二模式，具有用于在第一模式和第二模式中以不同增益执行读出的可变增益列放大器。固态摄像装置具有分别输出来自一行排列的多个像素的输出信号的多条输出线，并且可变增益放大器中的至少一方与多条输出线连接。使得在第二模式中的读出时的增益高于在第一模式下的读出时的增益。

8. 发明授权

US08077239B2 Solid-state image pickup device and camera 有权
标题翻译：固态图像拾取装置和相机
公开(公告)号：US08077239B2
公开(公告)日：2011-12-13
申请号：US12718257
申请日：2010-03-05
申请人： Shunsuke Inoue , Shin Kikuchi
发明人： Shunsuke Inoue , Shin Kikuchi
IPC分类号： H04N3/14 , H04N5/225 , H04N5/235 , H04N5/217
CPC分类号： H04N5/378 , H04N5/343 , H04N5/347
摘要： A solid-state image pickup device which has means of adding signals from plural pixels, which achieves a high S/N and a pickup device suitable for both static and moving image pickup. The device has a pixel unit having plural pixels arranged two-dimensionally and outputting pixel signals derived by photoelectric conversion, and has a first mode reading a pixel signal every pixel, and a second mode adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The device has plural output lines where signals from plural pixels arranged in one line are outputted respectively, and at least one amplifier is connected to each of the plurality of output lines. Gain at time of second mode readout is higher than gain at time of first mode readout.
摘要翻译：一种固态图像拾取装置，其具有添加来自多个像素的信号的装置，其实现了高S / N，以及适于静态和运动图像拾取的拾取装置。该装置具有像素单元，其具有二维布置的多个像素，并且输出通过光电转换导出的像素信号，并且具有每个像素读取像素信号的第一模式，以及添加和读取具有变量的多个像素信号的第二模式增益列放大器，用于在第一模式和第二模式下以不同增益执行读出。该装置具有多个输出线，其中分别输出排列成一行的多个像素的信号，并且至少一个放大器连接到多个输出线中的每一个。第二模式读出时的增益高于第一模式读出时的增益。

9. 发明申请

US20100157124A1 SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA 有权
标题翻译：固态图像拾取器和摄像机
公开(公告)号：US20100157124A1
公开(公告)日：2010-06-24
申请号：US12718257
申请日：2010-03-05
申请人： Shunsuke Inoue , Shin Kikuchi
发明人： Shunsuke Inoue , Shin Kikuchi
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/343 , H04N5/347
摘要： In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode.
摘要翻译：在具有从多个像素添加信号的装置的固体摄像装置中，本发明实现了高S / N，并且实现了适用于静态图像拾取和运动图像拾取两者的固态图像拾取装置。固体摄像装置是固体摄像装置，其具有像素单元，具有二维排列的多个像素，并输出通过光电转换得到的像素信号，并具有第一读取模式每个像素的像素信号，以及添加和读取多个像素信号的第二模式，具有用于在第一模式和第二模式中以不同增益执行读出的可变增益列放大器。固态摄像装置具有分别输出来自一行排列的多个像素的输出信号的多条输出线，并且可变增益放大器中的至少一方与多条输出线连接。使得在第二模式中的读出时的增益高于在第一模式下的读出时的增益。

10. 发明授权

US5438218A Semiconductor device with Shottky junction 失效
标题翻译：具肖特基结的半导体器件
公开(公告)号：US5438218A
公开(公告)日：1995-08-01
申请号：US54831
申请日：1993-04-30
申请人： Yoshio Nakamura , Shin Kikuchi , Shigeru Nishimura
发明人： Yoshio Nakamura , Shin Kikuchi , Shigeru Nishimura
IPC分类号： H01L21/285 , H01L21/329 , H01L29/47 , H01L29/78 , H01L29/872
CPC分类号： H01L29/66166 , H01L21/28537 , H01L29/47 , H01L29/7308 , H01L29/7839 , H01L29/872
摘要： A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is provided adjacent to the semiconductor region having an aperture therein, and an electrode region is provided in the aperture. A third semiconductor region comprising a p-type semiconductor is provided at a junction between the insulation film and the electrode region. The electrode comprises a monocrystalline metal and constitutes a Schottky junction with the semiconductor region. An ohmic electrode comprising aluminum is arranged on the electrode region.
摘要翻译：提供一种半导体器件，其具有包括n型半导体的第一半导体区域和具有比第一半导体区域更高的电阻率的n型半导体的第二半导体区域。在其中具有孔的半导体区域附近提供绝缘膜，并且在孔中设置电极区域。包括p型半导体的第三半导体区域设置在绝缘膜和电极区域之间的接合处。电极包括单晶金属，并与半导体区域构成肖特基结。包括铝的欧姆电极布置在电极区域上。

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