专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080045031A1 PLASMA ETCHING METHOD AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US20080045031A1
公开(公告)日：2008-02-21
申请号：US11677759
申请日：2007-02-22
申请人： Shin HIROTSU , Wakako Naito , Yoshinori Suzuki
发明人： Shin HIROTSU , Wakako Naito , Yoshinori Suzuki
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , H01J37/32027 , H01J37/32091 , H01J2237/334 , H01L21/31116 , H01L21/31144
摘要： A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target object including an etching target film, the anti-reflective coating and a patterned photoresist film sequentially formed in that order on a substrate. The plasma etching method further includes the steps of introducing a processing gas into the processing chamber; generating a plasma by applying a high frequency power to one of the first electrode and the second electrode; and applying a DC voltage to one of the first electrode and the second electrode.
摘要翻译：用于等离子体蚀刻形成在目标物体上的抗反射涂层的等离子体蚀刻方法包括将目标物体放置在具有彼此相对设置的具有第一电极和第二电极的处理室中的步骤，目标物体包括蚀刻目标膜，抗反射涂层和在基板上依次形成的图案化的光致抗蚀剂膜。等离子体蚀刻方法还包括将处理气体引入处理室的步骤; 通过向所述第一电极和所述第二电极之一施加高频电力来产生等离子体; 以及向所述第一电极和所述第二电极之一施加DC电压。

2. 发明授权

US07943523B2 Plasma etching method and computer readable storage medium 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US07943523B2
公开(公告)日：2011-05-17
申请号：US11677759
申请日：2007-02-22
申请人： Shin Hirotsu , Wakako Naito , Yoshinori Suzuki
发明人： Shin Hirotsu , Wakako Naito , Yoshinori Suzuki
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31138 , H01J37/32027 , H01J37/32091 , H01J2237/334 , H01L21/31116 , H01L21/31144
摘要： A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target object including an etching target film, the anti-reflective coating and a patterned photoresist film sequentially formed in that order on a substrate. The plasma etching method further includes the steps of introducing a processing gas into the processing chamber; generating a plasma by applying a high frequency power to one of the first electrode and the second electrode; and applying a DC voltage to one of the first electrode and the second electrode.
摘要翻译：用于等离子体蚀刻形成在目标物体上的抗反射涂层的等离子体蚀刻方法包括将目标物体放置在具有彼此相对设置的具有第一电极和第二电极的处理室中的步骤，目标物体包括蚀刻目标膜，抗反射涂层和在基板上依次形成的图案化的光致抗蚀剂膜。等离子体蚀刻方法还包括将处理气体引入处理室的步骤; 通过向所述第一电极和所述第二电极之一施加高频电力来产生等离子体; 以及向所述第一电极和所述第二电极之一施加DC电压。

3. 发明申请

US20060292876A1 Plasma etching method and apparatus, control program and computer-readable storage medium 审中-公开
标题翻译：等离子体蚀刻方法和装置，控制程序和计算机可读存储介质
公开(公告)号：US20060292876A1
公开(公告)日：2006-12-28
申请号：US11471699
申请日：2006-06-21
申请人： Wakako Naito
发明人： Wakako Naito
IPC分类号： C23F1/00 , G06F19/00 , G03C5/04 , H01L21/302
CPC分类号： H01L21/0337 , H01J37/32935 , H01L21/0271 , H01L21/0338 , H01L21/32139
摘要： In a method for plasma etching a wafer laminated with a target layer, a lower organic layer, an intermediate layer and an upper resist layer in that order from bottom, the method includes following steps: patterning the upper resist layer by exposure and development, plasma etching the intermediate layer by using the patterned upper resist layer as a mask, plasma etching the lower organic layer by using the intermediate layer as a mask, and plasma etching the target layer by using the lower organic layer as a mask. While the intermediate layer is etched, since reaction products are deposited on the sidewalls of the openings in the intermediate layer, the sidewalls of the openings in the intermediate layer are tapered. In addition, because the dimensions (bottom CD) of the openings in the intermediate layer are smaller than those of the upper resist layer, it is possible to form openings in the target layer smaller than those of the upper resist layer.
摘要翻译：在从底部依次层压有目标层，下部有机层，中间层和上部抗蚀剂层的晶片的等离子体蚀刻的方法中，该方法包括以下步骤：通过曝光和显影图案化上部抗蚀剂层，等离子体通过使用图案化的上抗蚀剂层作为掩模蚀刻中间层，通过使用中间层作为掩模来等离子体蚀刻下部有机层，并且通过使用下部有机层作为掩模来等离子体蚀刻目标层。当中间层被蚀刻时，由于反应产物沉积在中间层中的开口的侧壁上，所以中间层中的开口的侧壁是锥形的。此外，由于中间层的开口的尺寸（底部CD）小于上层抗蚀剂层的尺寸（底部CD），因此可以在目标层中形成比上部抗蚀剂层小的开口。

4. 发明申请

US20050269294A1 Etching method 审中-公开
标题翻译：蚀刻方法
公开(公告)号：US20050269294A1
公开(公告)日：2005-12-08
申请号：US11147197
申请日：2005-06-08
申请人： Yoshiki Igarashi , Wakako Naito
发明人： Yoshiki Igarashi , Wakako Naito
IPC分类号： B08B7/00 , C23F1/00 , H01L21/311 , H01L21/316 , H01L21/318
CPC分类号： H01L21/31116 , B08B7/0035 , H01L21/31612 , H01L21/3185
摘要： In an etching method, multiple etchings are sequentially performed in a single processing vessel on a laminated film having a plurality of layers formed on a substrate to be processed, without unloading the substrate to be processed from the vessel. Between the etchings, a cleaning processing for removing deposits from the processing vessel by using a plasma of a cleaning gas is performed. The cleaning gas is O2 containing gas, and preferably, a gaseous mixture of O2 and N2 gas. Further, the cleaning processing is performed under conditions of 50˜200 mTorr in the processing vessel; 5˜15 mL/min of O2 flow rate; and 100˜400 mL/min of N2 flow rate. The method prevents etching characteristics from being affected due to a memory effect, while offering the advantages of an all-in-one etching.
摘要翻译：在蚀刻方法中，在具有形成在待处理基板上的多个层的层压膜上的单个处理容器中顺序地进行多次蚀刻，而不从容器卸载待加工的基板。在蚀刻之间，执行通过使用清洁气体的等离子体从处理容器中去除沉积物的清洁处理。清洁气体是含O 2气体，优选O 2和N 2气体的气体混合物。此外，清洗处理在处理容器中在50〜200mTorr的条件下进行; 5〜15mL / min的O 2流量; 和100〜400mL / min的N 2 H 2流速。该方法防止蚀刻特性受到记忆效应的影响，同时提供了一体化蚀刻的优点。

5. 发明授权

US06780342B1 Method of etching and method of plasma treatment 有权
标题翻译：蚀刻方法和等离子体处理方法
公开(公告)号：US06780342B1
公开(公告)日：2004-08-24
申请号：US10030656
申请日：2002-01-11
申请人： Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
发明人： Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
IPC分类号： H01L2100
CPC分类号： H01L21/31138 , H01L21/31116 , H01L21/32136 , H01L21/76802
摘要： A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 Mz is applied to a lower electrode 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.
摘要翻译：将由CH2F2，O2和Ar构成的处理气体引入等离子体处理装置100的处理室102.处理气体的成分的流量比设定为CH2F2 / O2 / Ar = 20sccm / 10sccm / 100 sccm。处理室102内的压力设定在50mTorr。将其频率设定为13.56Mz的500W高频功率施加到其上放置晶片W的下电极108。处理气体升至等离子体，因此蚀刻形成在Cu层204上的SiNx层206。暴露的Cu层204几乎不被氧化，并且C和F不被注入其中。

6. 发明授权

US07211197B2 Etching method and plasma processing method 有权
标题翻译：蚀刻方法和等离子体处理方法
公开(公告)号：US07211197B2
公开(公告)日：2007-05-01
申请号：US10902893
申请日：2004-08-02
申请人： Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
发明人： Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
IPC分类号： B44C1/22
CPC分类号： H01L21/31138 , H01L21/31116 , H01L21/32136 , H01L21/76802
摘要： A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.
摘要翻译：由等离子体处理装置100的处理室102引入由CH 2 2 2 O 2 O 2，O 2和Ar构成的处理气体。处理气体的成分的流量比设定为CH 2/2 / 2/2 / Ar = 20sccm / 10sccm / 100 sccm。处理室102内的压力设定在50mTorr。将其频率设定为13.56MHz的500W高频功率施加到下电极。 108，其上放置有晶片W. 处理气体升至等离子体，因此蚀刻在Cu层204上形成的SiN x层206。暴露的Cu层204几乎不被氧化，并且C和F不被注入其中。

7. 发明申请

US20050000939A1 Etching method and plasma processing method 有权
标题翻译：蚀刻方法和等离子体处理方法
公开(公告)号：US20050000939A1
公开(公告)日：2005-01-06
申请号：US10902893
申请日：2004-08-02
申请人： Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
发明人： Masaaki Hagihara , Koichiro Inazawa , Wakako Naito
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , H05H1/46 , C23F1/00
CPC分类号： H01L21/31138 , H01L21/31116 , H01L21/32136 , H01L21/76802
摘要： A processing gas constituted of CH2F2, O2 and Ar is introduced into a processing chamber 102 of a plasma processing apparatus 100. The flow rate ratio of the constituents of the processing gas is set at CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber 102 is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode. 108 on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNx layer 206 formed on a Cu layer 204 is etched. The exposed Cu layer 204 is hardly oxidized and C and F are not injected into it.
摘要翻译：将由CH2F2，O2和Ar构成的处理气体引入等离子体处理装置100的处理室102.处理气体的成分的流量比设定为CH2F2 / O2 / Ar = 20sccm / 10sccm / 100 sccm。处理室102内的压力设定在50mTorr。将其频率设定为13.56MHz的500W高频功率施加到下电极。 108，其上放置有晶片W. 处理气体升至等离子体，因此蚀刻形成在Cu层204上的SiNx层206。暴露的Cu层204几乎不被氧化，并且C和F不被注入其中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式