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    • 2. 发明授权
      US5918131A Method of manufacturing a shallow trench isolation structure 失效
    • Method of manufacturing a shallow trench isolation structure
    • 制造浅沟槽隔离结构的方法
    • US5918131A
    • 1999-06-29
    • US961062
    • 1997-10-30
    • Shih-Ying Hsu , Heng-Sheng Huang
    • Shih-Ying Hsu , Heng-Sheng Huang
    • H01L21/762 , H01L21/336 , H01L21/76
    • H01L21/76232
    • A method of manufacturing a shallow trench isolation structure that utilizes the early formation of a strong oxide spacers so that for any subsequent pad oxide layer or sacrificial oxide layer removal using a wet etching method, the oxide layer adjacent to the substrate will not be over-etched to form recesses, thereby preventing the lowering of threshold voltage and the induction of a kink effect. The method includes the steps of forming a mask over a substrate and then patterning the mask to form a protective layer for subsequent etching operation. An oxide space is farmed on the sidewalls of the mask over the surface of the substrate. Subsequently, a trench is formed in the substrate along the side edges of the oxide spacers. A liner oxide box is formed on the sidewall of the trend and the liner oxide layer does not fill the trench. This is followed by filling the trench with a second oxide layer. After planarizing the upper surface with a chemical-mechanical polishing action, the mask is removed.
    • 一种制造浅沟槽隔离结构的方法，其利用早期形成强氧化物间隔物，使得对于任何后续的衬垫氧化物层或使用湿蚀刻方法的牺牲氧化物层去除，与衬底相邻的氧化物层将不会过量， 蚀刻形成凹部，从而防止阈值电压的降低和扭结效应的诱导。 该方法包括以下步骤：在衬底上形成掩模，然后对掩模进行图案化以形成用于后续蚀刻操作的保护层。 掩模的侧壁上的氧化物空间被堆积在衬底的表面上。 随后，沿着氧化物间隔物的侧边缘在衬底中形成沟槽。 在趋势的侧壁上形成衬里氧化物盒，并且衬垫氧化物层不填充沟槽。 然后用第二氧化物层填充沟槽。 在用化学机械抛光作用对上表面进行平面化之后，去除掩模。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 5. 发明申请
      US20050173096A1 Heat dissipating device 审中-公开
    • Heat dissipating device
    • 散热装置
    • US20050173096A1
    • 2005-08-11
    • US10874434
    • 2004-06-22
    • Shih-Ying Hsu , Chung-Ter Yang
    • Shih-Ying Hsu , Chung-Ter Yang
    • F28D15/02 , H01L23/427 , F28D15/00 , H05K7/20
    • F28D15/0233 , H01L23/427 , H01L2924/0002 , H01L2924/00
    • A heat dissipating device includes a fluid container made of a heat conductive material and having a heat-dissipating wall opposite to a heat-absorbing wall, and a surrounding wall cooperating with the heat-absorbing and heat-dissipating walls so as to confine a sealed vapor chamber. A heat exchanger member is disposed in the vapor chamber, is in heat-conductive contact with the heat-absorbing wall, and contains an amount of working fluid capable of changing into fluid vapor that fills the vapor chamber upon absorbing heat from the heat-absorbing wall. The fluid vapor is capable of changing into fluid condensate when cooled due to contact with the heat-dissipating wall. A heat-conductive cover plate is mounted spacedly on the heat-dissipating wall of the fluid container, and cooperates with the heat-dissipating wall so as to confine a heat-dissipating passage therebetween such that heat absorbed by the heat-dissipating wall is dissipated via the heat-dissipating passage.
    • 散热装置包括由导热材料制成并具有与吸热壁相对的散热壁的流体容器，以及与吸热和散热壁配合的周围壁，以限制密封 蒸气室。 热交换器构件设置在蒸气室中，与吸热壁导热接触，并且包含一定量的工作流体，该工作流体能够在从吸热层吸收热量时变成填充蒸气室的流体蒸气 壁。 当与散热壁接触时，流体蒸气能够变冷为冷凝液。 导热盖板间隔地安装在流体容器的散热壁上，并且与散热壁配合，以便在其间限制散热通道，从而消散由散热壁吸收的热量 通过散热通道。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 10. 发明授权
      US06344398B1 Method for forming transistor devices with different spacer width 失效
    • Method for forming transistor devices with different spacer width
    • 用于形成具有不同间隔宽度的晶体管器件的方法
    • US06344398B1
    • 2002-02-05
    • US09690514
    • 2000-10-17
    • Shih-Ying Hsu
    • Shih-Ying Hsu
    • H01L21336
    • H01L29/6659 , H01L21/823468 , H01L29/6656
    • A method for forming transistor devices with different spacer width for mixed-mode IC is provided. The method provides three different kinds of transistor devices on a wafer, two of them have their own spacer with different width, while the remaining one is without a spacer. The method comprises providing a semiconductor substrate having at least a first conductive gate, a second conductive gate and a third conductive gate formed thereon, and forming a first oxide layer over the first conductive gate, the second conductive gate and the third conductive gate. Then, a first etch operation is performed to form an oxide spacer along each sidewall of the first conductive gate, the second conductive gate and the third conductive gate. A first mask is then formed over the first conductive gate, and then the spacer is removed formed along each sidewall of the second conductive gate and the third conductive gate. After that, the first mask over the first conductive gate is removed. Subsequently, a silicon nitride layer is formed with a thickness different from that of the first oxide layer over the first conductive gate, the second conductive gate and the third conductive gate. Then, a second etch operation is performed to form a spacer of silicon nitride along each sidewall of the second conductive gate and the third conductive gate. Thereafter, a second conformal oxide layer is formed over the first conductive gate, the second conductive gate and the third conductive gate. Subsequently, a second mask is formed over the second oxide layer formed on the second conductive gate, while exposing the second conformal oxide layer over the first conductive gate and the third conductive gate. The second oxide layer is removed, and then the second mask is removed. Finally, the spacer of silicon nitride is removed along each sidewall of the third conductive gate with hot H3PO4 aqueous solution.
    • 提供了一种用于混合模式IC形成具有不同间隔宽度的晶体管器件的方法。 该方法在晶片上提供三种不同种类的晶体管器件，其中两种晶体管器件具有不同宽度的其自己的间隔物，而其余的不具有间隔物。 该方法包括提供半导体衬底，该半导体衬底具有形成在其上的至少第一导电栅极，第二导电栅极和第三导电栅极，并且在第一导电栅极，第二导电栅极和第三导电栅极上形成第一氧化物层。 然后，执行第一蚀刻操作以沿着第一导电栅极，第二导电栅极和第三导电栅极的每个侧壁形成氧化物间隔物。 然后在第一导电栅极上形成第一掩模，然后沿着第二导电栅极和第三导电栅极的每个侧壁形成间隔物。 之后，去除第一导电栅极上的第一掩模。 随后，形成与第一导电栅极，第二导电栅极和第三导电栅极之上的第一氧化物层的厚度不同的氮化硅层。 然后，执行第二蚀刻操作以在第二导电栅极和第三导电栅极的每个侧壁上形成氮化硅的间隔物。 此后，在第一导电栅极，第二导电栅极和第三导电栅极上形成第二共形氧化物层。 随后，在形成在第二导电栅极上的第二氧化物层上形成第二掩模，同时将第二共形氧化物层暴露在第一导电栅极和第三导电栅极上。 除去第二氧化物层，然后除去第二掩模。 最后，用热的H 3 PO 4水溶液沿着第三导电栅极的每个侧壁除去氮化硅的间隔物。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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