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    • 3. 发明申请
    • ELECTRONIC MEMORY DEVICE AND METHOD FOR ERROR CORRECTING THEREOF
    • 电子存储器件及其错误校正方法
    • US20100318874A1
    • 2010-12-16
    • US12649799
    • 2009-12-30
    • Shih-Fang HungTzu-Wei FangHsiang-An Hsieh
    • Shih-Fang HungTzu-Wei FangHsiang-An Hsieh
    • H03M13/05G06F11/10
    • G06F11/1068G11C2029/0411
    • An electronic memory device includes a controller and a memory unit. The controller includes a micro processor, a host interface, a memory unit interface connected to the memory unit, a data cache area for provisionally storing data, an ECC unit coupled to the memory unit for testing whether there is any error bit in the data or not, and an error correcting unit coupled to the memory unit. If an error bit in the data is found and can be dealt by the ECC unit, the error bit is then directly recovered by the ECC unit. However, if the error bit exceeds beyond the processing capability of the ECC unit, the error correcting unit is selected to primarily invert predetermined data bit till the number of the error can be successfully recovered by the ECC unit.
    • 电子存储装置包括控制器和存储器单元。 控制器包括微处理器,主机接口,连接到存储器单元的存储器单元接口,用于临时存储数据的数据高速缓存区域,耦合到存储器单元的ECC单元,用于测试数据中是否存在任何错误位,或者 以及耦合到存储器单元的纠错单元。 如果发现数据中的错误位并且可以由ECC单元处理,则该错误位由ECC单元直接恢复。 然而,如果错误位超出ECC单元的处理能力,则选择错误校正单元主要反转预定的数据位,直到ECC单元能够成功地恢复错误的数目。
    • 7. 发明授权
    • Non-volatile memory and controlling method thereof
    • 非易失性存储器及其控制方法
    • US08205036B2
    • 2012-06-19
    • US12509287
    • 2009-07-24
    • Ming-Dar ChenHsiang-An HsiehChuan-Sheng Lin
    • Ming-Dar ChenHsiang-An HsiehChuan-Sheng Lin
    • G06F12/00
    • G11C16/349G06F12/0246G06F2212/7211G11C16/3495
    • A non-volatile memory of present invention includes a number of memory blocks and a static wear leveling device. The static wear leveling device includes a memory unit for storing the erase counts of the memory blocks and a controlling unit for getting the erase counts from the memory unit, and calculating the standard deviation based on the EC, and deciding the way of the static wear leveling cycle according to the standard deviation. The controlling unit deciding the way of the static wear leveling cycle include the steps of setting at least one predetermined threshold point and judging whether the standard deviation of the erase counts is smaller than the predetermined threshold point. If the standard deviation of the erase counts is smaller than the predetermined threshold point, the static wear leveling cycle starts for a first amount of cycles and moves the static data stored a first number of memory blocks. If the standard deviation of the erase counts is bigger than the predetermined threshold point, starts for a second amount of cycles and moves the static data stored a second number of memory blocks.
    • 本发明的非易失性存储器包括多个存储块和静态损耗均衡装置。 静态损耗均衡装置包括用于存储存储块的擦除计数的存储单元和用于从存储单元获取擦除计数的控制单元,并且基于EC计算标准偏差,并且确定静态磨损的方式 调平周期根据标准偏差。 决定静态磨损均衡循环的方式的控制单元包括设置至少一个预定阈值点并判断擦除计数的标准偏差是否小于预定阈值点的步骤。 如果擦除计数的标准偏差小于预定阈值点,则静态磨损均衡循环开始第一次循环,并且移动存储有第一数量的存储块的静态数据。 如果擦除计数的标准偏差大于预定的阈值点,则开始第二个循环量并且移动存储有第二数量的存储器块的静态数据。
    • 8. 发明申请
    • ELECTRONIC STORAGE DEVICE AND CONTROL METHOD THEREOF
    • 电子储存装置及其控制方法
    • US20100312950A1
    • 2010-12-09
    • US12651096
    • 2009-12-31
    • Hsiang-An Hsieh
    • Hsiang-An Hsieh
    • G06F12/00G06F12/02G06F12/10
    • G06F12/0246G06F3/0616G06F3/0659G06F3/0679G06F12/08G06F2212/7201G06F2212/7203
    • An electronic storage device (320) for connecting with a host system (100) includes a storage unit (360) including at least one memory segment which has at least one physical block, a memory unit (350) receiving access commands sent from the host system, and a control unit (340) connecting with said memory unit. Each of the access commands contains at least a logical address which corresponds to a physical block. The control unit determines the command execution order of the access commands according to adjacent extent of the physical blocks in said memory segment to which the logical addresses of said access commands correspond. A control method of the electronic storage device is also disclosed in the present invention.
    • 一种用于与主机系统(100)连接的电子存储设备(320)包括一个存储单元(360),该存储单元包括至少一个具有至少一个物理块的存储区段,存储单元(350)接收从主机发送的访问命令 系统和与所述存储器单元连接的控制单元(340)。 每个访问命令至少包含与物理块对应的逻辑地址。 所述控制单元根据与所述访问命令的逻辑地址相对应的所述存储区段中的物理块的相邻范围来确定访问命令的命令执行顺序。 本发明还公开了电子存储装置的控制方法。
    • 9. 发明申请
    • Flash memory apparatus with automatic interface mode switching
    • 具有自动接口模式切换的闪存设备
    • US20090300273A1
    • 2009-12-03
    • US12232771
    • 2008-09-24
    • Ming-Dar ChenChuan-Sheng LinHsiang-An Hsieh
    • Ming-Dar ChenChuan-Sheng LinHsiang-An Hsieh
    • G06F12/02G06F12/00
    • G06F13/1694
    • A flash memory controller with automatic interface mode switching is applied to a flash memory apparatus with a plurality of flash memories and the controller contains: a memory interface, a microprocessor, and an interface mode controller. The microprocessor recognizes the supported interface mode of every flash memory connected with the memory interface in an initial setting process, and individually sets the corresponding interface mode setting value into the interface mode controller. Thus, when the flash memory apparatus is operating in a normal operation state, the interface mode controller can output the corresponding interface mode setting value according to the present enabled flash memory, and the memory interface can adjust and switch the interface mode according to the interface mode setting value outputted by the interface mode controller. Thereby, the present invention can achieve the purpose whereby the flash memory apparatus can speed up accessing and increase efficiency.
    • 具有自动接口模式切换的闪速存储器控制器被应用于具有多个闪速存储器的闪存装置,并且控制器包括:存储器接口,微处理器和接口模式控制器。 微处理器在初始设置过程中识别与存储器接口连接的每个闪存的支持的接口模式,并将相应的接口模式设置值单独设置为接口模式控制器。 因此,当闪存装置工作在正常工作状态时,接口模式控制器可根据当前使能的闪存输出相应的接口模式设置值,并且存储器接口可以根据接口调整和切换接口模式 模式设定值由界面模式控制器输出。 因此,本发明可以实现闪速存储装置可以加速访问并提高效率的目的。