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    • 7. 发明授权
    • Light receiving member for use in electrophotography
    • 用于电子照相术的光接收元件
    • US4804604A
    • 1989-02-14
    • US15924
    • 1987-02-18
    • Shigeru ShiraiKeishi SaitoTakayoshi AraiMinoru KatoYasushi Fujioka
    • Shigeru ShiraiKeishi SaitoTakayoshi AraiMinoru KatoYasushi Fujioka
    • G03G5/08G03G5/082G03G5/085
    • G03G5/08242G03G5/08235G03G5/0825G03G5/08257
    • An electrophotographic member has an electrophotographic substrate and a light receiving layer having (i) a 0.01 to 10 .mu.m thick charge injection inhibition layer, (ii) a 1 to 100 .mu.m thick photoconductive layer and (iii) a 0.003 to 30 .mu.m thick surface layer. The charge injection inhibition layer includes a polycrystal material containing silicon atoms as the main constituent, 30 to 5.times.10.sup.4 atomic ppm of a conductivity controlling element of Group III and Group V elements uniformly or nonuniformly distributed in the thickness direction and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The photoconductive layer is an amorphous semiconductor material containing silicon atoms as the main constituent and 1-40 atomic % of hydrogen atoms and/or halogen atoms. The surface layer includes an amorphous material: A--(Si.sub.x C.sub.1-x).sub.y :H.sub.1-y wherein x is 0.1 to 0.99999 and y is 0.6 to 0.999. The member stably provides, even upon repeated use, highly resolved visible images with clearer tone which are highly dense and high in quality.
    • 电子照相构件具有电子照相基板和光接收层,其具有(i)0.01至10μm厚的电荷注入阻挡层,(ii)1至100μm厚的光电导层和(iii)0.003至30μm 厚表层。 电荷注入抑制层包括以硅原子为主要成分的多晶材料,在厚度方向上均匀或不均匀分布的III族和V族元素的导电性控制元素为30〜5×10 4原子ppm,氢为1-40原子% 原子和/或卤素原子。 光电导层是含有硅原子和1-40原子%氢原子和/或卤素原子的非晶半导体材料。 表面层包括无定形材料:A-(SixC1-x)y:H1-y,其中x为0.1至0.99999,y为0.6至0.999。 即使重复使用,该构件稳定地提供高度密集且质量高的清晰的色调的高度分辨的可见图像。