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    • 2. 发明授权
    • Semiconductor laser apparatus
    • 半导体激光装置
    • US4998256A
    • 1991-03-05
    • US501045
    • 1990-03-29
    • Shigeru OhshimaMitsuko Nakamura
    • Shigeru OhshimaMitsuko Nakamura
    • G02B6/34G02B6/42H01S5/0687
    • H01S5/0687G02B6/4246G02B6/29358G02B6/4207
    • In a semiconductor laser apparatus of the invention, a laser beam emitted from a semiconductor laser is collimated by an optical leans, and is subsequently split by a beam splitter in two directions. One split laser beam component is focused on a first photodetector through an optical lens. The other laser beam component is incident on a Fabry-Perot resonator, and is changed in intensity thereby. The laser beam component is then focused on a photodetector through an optical lens. The Fabry-Perot resonator is integrally designed such that dielectric multilayer films are respectively deposited on both the end faces of a crystalized quartz bulk, which is shaped into a columnar shape extending in the C-axis direction, so as to form a pair of reflect filters. Since the bulk is made of crystalized quartz it is not easily influenced by changes in temperature.
    • 在本发明的半导体激光装置中,从半导体激光器发射的激光束被光学折射准直,并且随后在两个方向上被分束器分开。 一个分割的激光束分量通过光学透镜聚焦在第一光电检测器上。 另一个激光束分量入射在法布里 - 珀罗(Fabry-Perot)谐振器上,从而改变其强度。 然后将激光束分量通过光学透镜聚焦在光电检测器上。 法布里 - 珀罗谐振器被一体地设计成使得电介质多层膜分别沉积在结晶化的石英体的两个端面上,该结晶化的石英体被成形为在C轴方向上延伸的柱状,以形成一对反射 过滤器。 由于体积是由结晶石英制成,不容易受温度变化的影响。