专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5455430A Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate 失效
标题翻译：具有形成在冶金级基底上的半导体级硅层的光伏器件
公开(公告)号：US5455430A
公开(公告)日：1995-10-03
申请号：US922579
申请日：1992-07-30
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L29/04 , H01L31/0745 , H01L31/18 , H01L31/20 , H01L27/14 , H01L31/00
CPC分类号： H01L31/0745 , H01L29/04 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02P70/521
摘要： The disclosure relates to a semiconductor device comprising silicon having a substrate composed of low grade silicon, a silicon layer whose silicon purity is higher than that of the low grade silicon formed on the substrate and an electrode formed on the silicon layer. In the device, the low grade silicon may be selected from metallurgical grade silicon and silicon whose purity is less than 99.99%, and the silicon layer may be over 99.999% purity or semiconductor grade.
摘要翻译：本公开涉及一种半导体器件，其包括具有由低等级硅构成的衬底的硅，其硅纯度高于形成在衬底上的低等级硅的硅纯度的硅层和形成在硅层上的电极。在该器件中，低等级硅可以选自纯度低于99.99％的冶金级硅和硅，并且硅层的纯度可以超过99.999％或半导体级。

2. 发明授权

US5401336A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5401336A
公开(公告)日：1995-03-28
申请号：US151254
申请日：1993-11-12
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/04 , H01L31/0236 , H01L31/072 , H01L31/075 , H01L31/078
CPC分类号： H01L31/0236 , H01L31/0747 , Y02E10/50
摘要： A photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin film arranged on portions of an n-type crystalline silicon substrate, a collecting electrode arranged on the amorphous silicon thin film, and an insulating layer arranged around the portions where the amorphous silicon thin film is formed. Thus, a pin junction is formed only below the collecting electrode.
摘要翻译：光电器件包括i型非晶硅薄膜和p型非晶硅薄膜，其布置在n型晶体硅衬底的部分上，设置在非晶硅薄膜上的集电极和布置在非晶硅薄膜上的绝缘层形成非晶硅薄膜的部分。因此，仅在集电极下形成pin结。

3. 发明授权

US5144391A Semiconductor device which relieves internal stress and prevents cracking 失效
标题翻译：减轻内部应力并防止开裂的半导体装置
公开(公告)号：US5144391A
公开(公告)日：1992-09-01
申请号：US658386
申请日：1991-02-20
申请人： Hiroshi Iwata , Shigeru Noguchi , Satoshi Ishida , Keiichi Sano , Shoichiro Nakayama
发明人： Hiroshi Iwata , Shigeru Noguchi , Satoshi Ishida , Keiichi Sano , Shoichiro Nakayama
IPC分类号： H01L29/78 , H01L29/423 , H01L29/786
CPC分类号： H01L29/42384
摘要： A semiconductor device according to the present invention comprises a semiconductor thin film, and first and second insulator films formed in such arrangement that the semiconductor thin film being sandwiched therebetween. First and second graded layers each containing a constitutent element of the semiconductor thin film and impurities and having a content of the impurities decreased in the direction of the semiconductor thin film are interposed between the semiconductor thin film and the respective insulator films, thereby to relax internal stress produced in the junction interfaces of the semiconductor thin film and the insulator films and to prevent cracking from occurring in the junction interfaces.
摘要翻译：根据本发明的半导体器件包括半导体薄膜，以及将半导体薄膜夹在其间的结构形成的第一和第二绝缘膜。每个包含半导体薄膜的元素的第一和第二渐变层以及在半导体薄膜的方向上具有降低的杂质含量的杂质插入在半导体薄膜和各个绝缘体膜之间，从而使内部在半导体薄膜和绝缘膜的接合界面产生的应力，并防止在接合界面发生裂纹。

4. 发明授权

US5378289A Method of forming crystalline silicon film and solar cell obtained thereby 失效
标题翻译：由此形成晶体硅膜和太阳能电池的方法
公开(公告)号：US5378289A
公开(公告)日：1995-01-03
申请号：US151271
申请日：1993-11-12
申请人： Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata
发明人： Shigeru Noguchi , Keiichi Sano , Hiroshi Iwata
IPC分类号： H01L21/20 , H01L31/0236 , H01L31/04 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/0236 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A mold of crystalline silicon having a textured surface is placed on an amorphous silicon film so that projecting portions of the textured surface are in contact with a surface of the silicon film. The amorphous silicon film is then heated for crystallizing the same by solid phase epitaxy, thereby forming a crystalline silicon film having a textured surface corresponding to that of the mold.
摘要翻译：具有纹理表面的晶体硅的模具被放置在非晶硅膜上，使得纹理表面的突出部分与硅膜的表面接触。然后通过固相外延加热非晶硅膜使其结晶，从而形成具有对应于模具的纹理表面的结晶硅膜。

5. 发明授权

US5370747A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5370747A
公开(公告)日：1994-12-06
申请号：US980451
申请日：1992-11-23
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/04 , H01L31/0236 , H01L31/052 , H01L31/075 , H01L31/06
CPC分类号： H01L31/075 , H01L31/0236 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： A photovoltaic device including a substrate, a first electrode layer provided on the substrate, a photoelectric conversion layer provided on the first electrode, and a second electrode layer provided on the photoelectric conversion layer. A discontinuous interfacial layer is provided at at least one of the interfaces between a first conductivity type layer and a photoactive layer provided in the photoelectric conversion layer, between the photoactive layer and a second, opposite conductivity type layer of the photoelectric conversion layer, and between the photoelectric conversion layer and the second electrode layer. The at least one interface provided with the discontinuous interfacial layer may be so textured that portions of the interface not provided with interfacial layers project toward the substrate.
摘要翻译：一种光电器件，包括衬底，设置在衬底上的第一电极层，设置在第一电极上的光电转换层和设置在光电转换层上的第二电极层。在第一导电类型层和设置在光电转换层中的光敏层之间的光电转换层和光电转换层的第二相反导电类型层之间的界面中的至少一个界面和介于光电转换层和第二电极层。设置有不连续界面层的至少一个界面可以是如此纹理的，使得不具有界面层的界面的部分向基板突出。

6. 发明授权

US5318919A Manufacturing method of thin film transistor 失效
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US5318919A
公开(公告)日：1994-06-07
申请号：US738201
申请日：1991-07-30
申请人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Satoshi Ishida , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04 , H01L29/784
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78618 , H01L29/78675
摘要： A manufacturing method of a thin film transistor, wherein a laminated body consisting of an intrinsic amorphous silicon layer and a conductive amorphous silicon layer is formed on a glass substrate, and annealed at low temperatures not higher than 600.degree. C. thereby obtaining a polycrystalline silicon film. The conductive amorphous silicon layer gives girth to a core for polycrystallization, and therefore the intrinsic amorphous silicon layer is easily recrystallized by annealing at low temperatures.
摘要翻译：一种薄膜晶体管的制造方法，其中在玻璃基板上形成由本征非晶硅层和导电非晶硅层构成的层叠体，并在不高于600℃的低温下退火，从而获得多晶硅电影。导电非晶硅层在芯体上产生多晶化，因此本征非晶硅层通过在低温退火而容易地重结晶。

7. 发明授权

US5213628A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5213628A
公开(公告)日：1993-05-25
申请号：US757250
申请日：1991-09-10
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0745 , H01L31/0747 , H01L31/20
CPC分类号： H01L31/0747 , H01L31/0745 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photovoltaic device includes a monocrystalline or polycrystalline semiconductor layer of one conductivity type, a substantially intrinsic substantially amorphous semiconductor layer having a predetermined thickness small enough to avoid producing carriers therein. The substantially intrinsic, substantially amorphous layer is formed on the one conductivity type semiconductor layer, and a substantially amorphous semiconductor layer of the opposite conductivity type is formed on the intrinsic, semiconductor layer.
摘要翻译：光电器件包括一种导电类型的单晶或多晶半导体层，具有足够小以避免在其中产生载流子的预定厚度的基本上本征的基本上非晶半导体层。在一个导电型半导体层上形成基本上本征的基本非晶层，并且在本征半导体层上形成相反导电类型的基本非晶半导体层。

8. 发明授权

US5243216A Phototransistor 失效
标题翻译：光电晶体管
公开(公告)号：US5243216A
公开(公告)日：1993-09-07
申请号：US839107
申请日：1992-02-20
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/10 , H01L31/0376 , H01L31/11
CPC分类号： H01L31/1105 , H01L31/03762 , Y02E10/548
摘要： A phototransistor includes a monocrystalline semiconductor substrate of a first conductivity type, a crystalline semiconductor layer of a second conductivity type formed from a surface of the semiconductor substrate to a predetermined depth, a substantially intrinsic amorphous semiconductor layer formed on the crystalline semiconductor layer, and an amorphous semiconductor layer of the first conductivity type formed on the intrinsic amorphous semiconductor layer.
摘要翻译：光电晶体管包括第一导电类型的单晶半导体衬底，由半导体衬底的表面形成到预定深度的第二导电类型的晶体半导体层，形成在晶体半导体层上的基本上本征的非晶半导体层，以及形成在本征非晶半导体层上的第一导电类型的非晶半导体层。

9. 发明授权

US5155051A Method of manufacturing photovoltaic device 失效
标题翻译：制造光伏器件的方法
公开(公告)号：US5155051A
公开(公告)日：1992-10-13
申请号：US717927
申请日：1991-06-20
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L27/142 , H01L31/0392 , H01L31/075 , H01L31/18 , H01L31/20
CPC分类号： H01L31/202 , H01L31/03921 , H01L31/0475 , H01L31/075 , H01L31/186 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a photovoltaic device, wherein an amorphous semiconductor layer of one conductivity type doped with impurities which determine the conductivity type is formed on a substrate having a conductive surface, an insulating film is formed on this amorphous semiconductor layer, the insulating film is patterned to partially form aperture regions where the surface of said amorphous semiconductor layer is exposed, an intrinsic amorphous semiconductor layer on said insulating film and the aperture regions formed over the substrate, the amorphous semiconductor layer of one conductivity type and the intrinsic amorphous semiconductor layer are thermally treated, crystallization is advanced using the amorphous semiconductor layer of one conductivity type located beneath said aperture region as a core to form a polycrystal semiconductor layer of one conductivity type, a semiconductor layer of the other conductivity type is formed on this polycrystal semiconductor layer, and an electrode is formed in contact with the semiconductor layer region of the other conductivity type located over said aperture regions.
摘要翻译：一种制造光电器件的方法，其中在具有导电表面的衬底上形成掺杂有确定导电类型的杂质的一种导电类型的非晶半导体层，在该非晶半导体层上形成绝缘膜，绝缘膜为图案化以部分地形成其中暴露所述非晶半导体层的表面的孔区，所述绝缘膜上的本征非晶半导体层和形成在衬底上的孔径区域，一种导电类型的非晶半导体层和本征非晶半导体层是使用位于所述开口区域下方的一种导电类型的非晶半导体层作为芯来进行结晶化以形成一种导电型的多晶半导体层，在该多晶半导体层上形成另一导电类型的半导体层，和电极形成为与位于所述孔区域上的另一导电类型的半导体层区域接触。

10. 发明授权

US5705828A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5705828A
公开(公告)日：1998-01-06
申请号：US544956
申请日：1996-02-20
申请人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
发明人： Shigeru Noguchi , Hiroshi Iwata , Keiichi Sano
IPC分类号： H01L31/0725 , H01L31/0747 , H01L31/20 , H01L29/04 , H01L31/036 , H01L31/0376
CPC分类号： H01L31/0725 , H01L31/0747 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The disclosure relates to a photovoltaic device comprising a transparent electrode, one conductive type amorphous semiconductor, another conductive type crystal semiconductor, an intrinsic amorphous semiconductor, another conductive type amorphous semiconductor and a metal electrode and having a first semiconductor junction composed of the one conductive type amorphous semiconductor and the another conductive type crystal semiconductor, and a second semiconductor junction composed of the another type crystal semiconductor and the another conductive type amorphous semiconductor, wherein the transparent electrode is located on light incident side of the one conductive type amorphous semiconductor, the metal electrode is located on another side, the intrinsic amorphous semiconductor is located between the another conductive type crystal semiconductor and the another conductive type amorphous semiconductor, the first semiconductor junction is located on the light incident side, and the second semiconductor junction is located on the another side. In the device, the crystal semiconductor is composed single-crystalline semiconductor or polycrystalline semiconductor.
摘要翻译：本发明涉及一种光电器件，其包括透明电极，一个导电型非晶半导体，另一导电型晶体半导体，本征非晶半导体，另一导电型非晶半导体和金属电极，并具有由一个导电型非晶半导体和另一导电型晶体半导体，以及由另一种类型的晶体半导体和另一种导电型非晶半导体构成的第二半导体结，其中透明电极位于一个导电型非晶半导体的光入射侧，金属电极位于另一侧，本征非晶半导体位于另一导电型晶体半导体与另一导电型非晶半导体之间，第一半导体结位于光入射侧，而秒 ond半导体结位于另一侧。在该器件中，晶体半导体是单晶半导体或多晶半导体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式