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    • 2. 发明授权
    • Hybrid plasmon generator structure and process
    • 混合等离子体发生器结构与工艺
    • US08488419B1
    • 2013-07-16
    • US13548301
    • 2012-07-13
    • Xuhui JinYoshitaka SasakiHiroyuki Ito
    • Xuhui JinYoshitaka SasakiHiroyuki Ito
    • G11B11/00
    • G11B5/314G11B5/3133G11B5/3163G11B5/6088G11B2005/0021
    • A TAMR head is disclosed with a hybrid plasmon generator (hPG) formed between a waveguide and write pole at an ABS. The hPG has a planar bottom surface facing the waveguide and is comprised of a first non-noble metal layer with a peg portion adjoining the ABS. The peg tip has a thickness in a down track direction and a width in a cross track direction that may be reduced to about 10 nm to shrink the size of the optical spot that provides localized heating to a track and facilitates the write process. A second metal layer made of a noble metal is formed on and alongside the first metal layer and is recessed from the ABS to expose the peg, and has a top surface adjoining the write pole that may have side and top heat sinks.
    • 公开了一种在ABS处形成在波导和写极之间的混合等离子体激元发生器(hPG)的TAMR头。 hPG具有面向波导的平面底表面,并且包括具有邻接ABS的钉部分的第一非贵金属层。 钉尖具有向下轨道方向的厚度和横向方向上的宽度,其可以减小到约10nm,以将向局部加热提供给轨道的光点的尺寸收缩并且便于写入过程。 由贵金属制成的第二金属层形成在第一金属层上并且与第一金属层一起并且从ABS凹入以露出钉,并且具有与可能具有侧面和顶部散热器的写入极相邻的顶表面。
    • 3. 发明授权
    • Multi-directional pin anneal of MR sensors with plasmon heating
    • MR等离子体加热的多向引脚退火
    • US09372241B2
    • 2016-06-21
    • US12590364
    • 2009-11-06
    • Yuchen ZhouXuhui JinGrace Gorman
    • Yuchen ZhouXuhui JinGrace Gorman
    • B05D3/06G01R33/09B82Y25/00B82Y40/00H01F41/30G11B5/31G11B5/39H01F10/32
    • G01R33/093B82Y25/00B82Y40/00G11B5/3163G11B5/3903H01F10/3254H01F10/3268H01F41/304
    • A method by which portions of a wafer level fabrication can be selectively heated by forming plasmon generating layers of specific size, shape, orientation and material on the fabrication and then illuminating the formation with electromagnetic radiation of such wavelength and polarization as will optimally be absorbed by the plasmon generating layers so as to generate plasmons therein. The generated plasmons thereupon produce thermal energy which is transferred to portions of the fabrication with which the plasmon generation layer has thermal contact. This method is particularly advantageous for producing multiple anneals and different magnetic pinning directions for the anti-ferromagnetic pinning layer in each of an array of GMR or TMR devices. In that process, the anti-ferromagnetic layer must be raised above its Curie temperature at which point it loses its anti-ferromagnetic properties and can have a magnetization imposed by application of an external magnetic field. The method can equally well be applied to any wafer level fabrication or deposited film fabrication in which it is desired to heat specific regions to obtain some specified result that is temperature dependent.
    • 可以通过在制造上形成特定尺寸,形状,取向和材料的等离子体激元产生层来选择性地加热晶片级制造的部分的方法,然后用最佳被最佳吸收的波长和极化的电磁辐射照射地层 等离子体发生层,以便在其中产生等离子体激元。 所产生的等离子体激元产生热能,其转移到等离子体发生层具有热接触的制造部分。 该方法对于在GMR或TMR器件阵列中的每个中的反铁磁钉扎层产生多个退火和不同的磁性钉扎方向特别有利。 在该过程中,反铁磁层必须升高到高于其居里温度,此时其失去其抗铁磁特性,并且可以通过施加外部磁场而施加磁化强度。 该方法同样可以应用于任何晶片级制造或沉积膜制造,其中期望加热特定区域以获得温度依赖性的一些指定结果。
    • 7. 发明授权
    • Directional waveguide coupler for ABS reflected light
    • ABS反射光的定向波导耦合器
    • US08238202B2
    • 2012-08-07
    • US12928678
    • 2010-12-16
    • Erhard SchreckTobias MaletzkyXuhui JinYuchen ZhouKenichi TakanoJoe Smyth
    • Erhard SchreckTobias MaletzkyXuhui JinYuchen ZhouKenichi TakanoJoe Smyth
    • G11B11/00
    • G11B5/314B82Y20/00G02B6/1226G02B6/125G02B6/2821G11B5/3189G11B2005/001G11B2005/0021
    • A waveguide structure for a TAMR head is disclosed wherein at least one detection waveguide is formed parallel to a main waveguide and located a gap distance therefrom. A light source transmits light into the main waveguide and towards an ABS/medium interface. A plasmon generator converts light from the waveguide into plasmon waves that are directed onto a magnetic medium. Back reflected light is captured by the main waveguide, partially diverted into a detection waveguide, and transmitted to a photo detector that measures light intensity (IB) which correlates closely to the plasmon wave intensity at the ABS/medium interface. A controller linked to the photo detector is employed to calculate IB as a function of ABS/medium spacing in a non-write condition and this relationship can be used to control and maintain a constant plasmon wave intensity at the ABS during a series of TAMR write processes with a plurality of media.
    • 公开了一种用于TAMR头的波导结构,其中至少一个检测波导与主波导平行地形成并且与其间的间隙距离。 光源将光传输到主波导并朝向ABS /介质接口。 等离子体激元发生器将来自波导的光转换成被引导到磁介质上的等离子体波。 后反射光被主波导捕获,部分转移到检测波导中,并传输到光检测器,该光检测器测量与ABS /介质界面处的等离子体波强度密切相关的光强度(IB)。 在非写入条件下,使用与光电检测器相关联的控制器来计算IB作为ABS /介质间隔的函数,并且该关系可用于在一系列TAMR写入期间控制和维持ABS处的恒定等离子体波强度 具有多个媒体的过程。
    • 9. 发明授权
    • Plasmon shield to shape and reduce optical spot
    • 等离子体屏蔽形状并减少光斑
    • US08036069B1
    • 2011-10-11
    • US12802096
    • 2010-05-28
    • Xuhui JinYuchen ZhouJoe SmythTobias MaletzkyKenichi TakanoErhard Schreck
    • Xuhui JinYuchen ZhouJoe SmythTobias MaletzkyKenichi TakanoErhard Schreck
    • G11B11/00
    • G11B5/314G02B6/107G11B2005/0021
    • A TAMR head is disclosed with a triangular shaped plasmon antenna covered on two sides with a plasmon layer that generates an edge plasmon mode along a vertex of the two plasmon sides formed opposite a main pole layer. A plasmon shield (PS) is formed along the ABS and opposite the vertex to confine an electric field from the edge plasmon mode within a small radius of the edge plasmon tip thereby reducing the optical spot size on the magnetic medium and enhancing writability. An end of a waveguide used to direct input electromagnetic radiation to the plasmon antenna adjoins a PS side opposite the ABS. In one embodiment, a magnetic shield may be formed along the ABS and adjoins the PS so that a first PS section terminates at the ABS and faces the vertex while a second PS section is formed between the magnetic shield and waveguide end.
    • 公开了具有三面形等离子体激元的三角形等离子体激元天线,该三角形等离子体激元天线用等离子体膜覆盖,该等离子体膜沿着与主极层相对的两个等离子体激元侧的顶点产生边缘等离子体模式。 等离子体屏蔽(PS)沿着ABS形成并与顶点相对,以将边缘等离子体激元模式的电场限制在边缘等离子体激元尖端的小半径内,从而减小磁介质上的光点尺寸并提高可写性。 用于将输入电磁辐射引导到等离子体激元天线的波导的一端与ABS相对的PS侧相邻。 在一个实施例中,可以沿着ABS形成磁屏蔽并与PS邻接,使得第一PS部分在ABS处终止并面向顶点,而在磁屏蔽和波导端之间形成第二PS部分。