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1. 发明申请

US20050208727A1 Method of etching bottle trench and fabricating capacitor with same 有权
公开(公告)号：US20050208727A1
公开(公告)日：2005-09-22
申请号：US10871619
申请日：2004-06-18
申请人： Shian-Jyh Lin , Yu-Sheng Hsu , Chung-Yuan Lee
发明人： Shian-Jyh Lin , Yu-Sheng Hsu , Chung-Yuan Lee
IPC分类号： H01L21/033 , H01L21/20 , H01L21/308 , H01L21/311 , H01L21/334 , H01L21/8242 , H01L29/94
CPC分类号： H01L27/1087 , H01L21/0337 , H01L21/3086 , H01L29/66181 , H01L29/945
摘要： A method for forming a bottle trench. First, a substrate covered by a photoresist layer is rotated to a specific angle prior to performance of lithography, thereby forming a rectangular opening in the photoresist layer and exposing the substrate, in which edges of the rectangular opening are substantially parallel to the {110} plane of the substrate due to the rotation of the substrate. Next, the exposed substrate is etched to form a trench therein, in which the sidewall surface of the trench is the {110} plane of the substrate. Finally, isotropic etching is performed on the substrate of the lower portion of the trench using an etching shield layer formed on the sidewall of the upper portion of the trench as an etching mask, to form the bottle trench. The invention also discloses a method of fabricating a bottle trench capacitor.

2. 发明授权

US06977227B2 Method of etching bottle trench and fabricating capacitor with same 有权
标题翻译：蚀刻瓶沟槽的方法和制造与之相同的电容器
公开(公告)号：US06977227B2
公开(公告)日：2005-12-20
申请号：US10871619
申请日：2004-06-18
申请人： Shian-Jyh Lin , Yu-Sheng Hsu , Chung-Yuan Lee
发明人： Shian-Jyh Lin , Yu-Sheng Hsu , Chung-Yuan Lee
IPC分类号： H01L21/033 , H01L21/20 , H01L21/308 , H01L21/311 , H01L21/334 , H01L21/8242 , H01L29/94
CPC分类号： H01L27/1087 , H01L21/0337 , H01L21/3086 , H01L29/66181 , H01L29/945
摘要： A method for forming a bottle trench. First, a substrate covered by a photoresist layer is rotated to a specific angle prior to performance of lithography, thereby forming a rectangular opening in the photoresist layer and exposing the substrate, in which edges of the rectangular opening are substantially parallel to the {110} plane of the substrate due to the rotation of the substrate. Next, the exposed substrate is etched to form a trench therein, in which the sidewall surface of the trench is the {110} plane of the substrate. Finally, isotropic etching is performed on the substrate of the lower portion of the trench using an etching shield layer formed on the sidewall of the upper portion of the trench as an etching mask, to form the bottle trench. The invention also discloses a method of fabricating a bottle trench capacitor.
摘要翻译：一种形成瓶槽的方法。首先，在进行光刻之前，将由光致抗蚀剂层覆盖的基板旋转到特定角度，从而在光致抗蚀剂层中形成矩形开口并暴露基板，其中矩形开口的边缘基本上平行于{110} 由于基板的旋转而导致基板的平面。接下来，暴露的衬底被蚀刻以在其中形成沟槽，其中沟槽的侧壁表面是衬底的{110}平面。最后，使用形成在沟槽的上部的侧壁上的蚀刻屏蔽层作为蚀刻掩模，在沟槽的下部的基板上进行各向同性蚀刻，以形成瓶沟槽。本发明还公开了一种制造瓶沟电容器的方法。

3. 发明申请

US20070187752A1 MEMORY CELL WITH A VERTICAL TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：具有垂直晶体管的存储单元及其制造方法
公开(公告)号：US20070187752A1
公开(公告)日：2007-08-16
申请号：US11692163
申请日：2007-03-27
申请人： Shian-Jyh Lin , Yu-Sheng Hsu
发明人： Shian-Jyh Lin , Yu-Sheng Hsu
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/66181 , H01L27/10841 , H01L27/10867
摘要： A memory cell with a vertical transistor has a semiconductor silicon substrate with a deep trench, in which the deep trench has a first sidewall region and a second sidewall region. A first insulating layer is formed overlying the first sidewall region. A second insulating layer is formed overlying the second sidewall region, in which the thickness of the first insulating layer is larger than the thickness of the second insulating layer. A gate electrode layer is sandwiched between the first insulating layer and the second insulating layer. A buried strap out-diffusion region is formed in the substrate adjacent to the second sidewall region, in which the buried strap out-diffusion region is located near the lower portion of the second insulating layer.
摘要翻译：具有垂直晶体管的存储单元具有深沟槽的半导体硅衬底，其中深沟槽具有第一侧壁区域和第二侧壁区域。第一绝缘层形成在第一侧壁区域的上方。第二绝缘层形成为覆盖第二侧壁区域，其中第一绝缘层的厚度大于第二绝缘层的厚度。栅电极层夹在第一绝缘层和第二绝缘层之间。掩埋带外扩散区域形成在与第二侧壁区域相邻的衬底中，其中掩埋带外延扩散区域位于第二绝缘层的下部附近。

4. 发明申请

US20050167721A1 Memory cell with a vertical transistor and fabrication method thereof 审中-公开
标题翻译：具有垂直晶体管的存储单元及其制造方法
公开(公告)号：US20050167721A1
公开(公告)日：2005-08-04
申请号：US10845909
申请日：2004-05-14
申请人： Shian-Jyh Lin , Yu-Sheng Hsu
发明人： Shian-Jyh Lin , Yu-Sheng Hsu
IPC分类号： H01L21/334 , H01L21/76 , H01L21/8242 , H01L27/108 , H01L29/732
CPC分类号： H01L29/66181 , H01L27/10841 , H01L27/10867
摘要： A memory cell with a vertical transistor has a semiconductor silicon substrate with a deep trench, in which the deep trench has a first sidewall region and a second sidewall region. A first insulating layer is formed overlying the first sidewall region. A second insulating layer is formed overlying the second sidewall region, in which the thickness of the first insulating layer is larger than the thickness of the second insulating layer. A gate electrode layer is sandwiched between the first insulating layer and the second insulating layer. A buried strap out-diffusion region is formed in the substrate adjacent to the second sidewall region, in which the buried strap out-diffusion region is located near the lower portion of the second insulating layer.
摘要翻译：具有垂直晶体管的存储单元具有深沟槽的半导体硅衬底，其中深沟槽具有第一侧壁区域和第二侧壁区域。第一绝缘层形成在第一侧壁区域的上方。第二绝缘层形成为覆盖第二侧壁区域，其中第一绝缘层的厚度大于第二绝缘层的厚度。栅电极层夹在第一绝缘层和第二绝缘层之间。掩埋带外扩散区域形成在邻近第二侧壁区域的衬底中，其中掩埋带外延扩散区域位于第二绝缘层的下部附近。

5. 发明申请

US20090180902A1 Fan 审中-公开
标题翻译：风扇
公开(公告)号：US20090180902A1
公开(公告)日：2009-07-16
申请号：US12007733
申请日：2008-01-15
申请人： Cho-Nien Tung , Min-Fu Hsieh , Yu-Sheng Hsu , Min-Ching Tsai , Lung-Wei Huang
发明人： Cho-Nien Tung , Min-Fu Hsieh , Yu-Sheng Hsu , Min-Ching Tsai , Lung-Wei Huang
IPC分类号： F04B17/00
CPC分类号： F04D29/584 , F04D25/0646 , F04D25/082
摘要： A fan includes a fan frame having an upright barrel, a fan blade unit having a fan hub with radial blades, and a driving module formed of a stator, an axle bearing, a core shaft and a rotor for causing rotation of the fan hub with the blades relative to the stator. The stator has a collar affixed to the barrel of the fan frame, radial ribs extending from and spaced around the periphery of the collar, and three-dimensional wings respectively connected to the free ends of the radial ribs each three-dimensional wings having a smoothly arched and radially and axially extending outer surface.
摘要翻译：风扇包括具有直立筒的风扇框架，具有带径向叶片的风扇毂的风扇叶片单元和由定子，轴承，芯轴和转子形成的驱动模块，用于使风扇毂与第刀片相对于定子。定子具有固定到风扇框架的筒体的轴环，从轴环的周边延伸并间隔开的径向肋，以及分别连接到径向肋的自由端的三维翼，每个三维翼具有平滑的拱形和径向和轴向延伸的外表面。

6. 发明申请

US20100154614A1 Method and device for vibration Assisted scribing process on a substrate 审中-公开
标题翻译：用于振动的方法和装置辅助划线在基片上
公开(公告)号：US20100154614A1
公开(公告)日：2010-06-24
申请号：US12591811
申请日：2009-12-02
申请人： Yunn-Shiuan Liao , Yu-Sheng Hsu , Saw Chi Mya
发明人： Yunn-Shiuan Liao , Yu-Sheng Hsu , Saw Chi Mya
IPC分类号： B26D3/08 , B26F3/00
CPC分类号： B26F3/002 , B26D3/08 , B26D7/086 , B28D5/0011 , C03B33/027 , C03B33/107 , Y10T83/0341 , Y10T83/0385 , Y10T225/12 , Y10T225/321
摘要： The present invention provides a vibration assistant scribing apparatus for generating an indentation having a median crack of a depth on a substrate and the method for the same. The provided vibration assistant scribing apparatus includes a clamping device clamping a scribing wheel for scribing the substrate; a moving pedestal having a pressure device configured thereon, the pressure device providing a pressure to the scribing wheel through the clamping device; and a vibration generator configured on the clamping device and providing a vibration force to the scribing wheel through the clamping device, so as to increase the depth of the median crack thereby.
摘要翻译：本发明提供了一种用于产生具有基板深度的中间裂纹的凹陷的振动辅助划线装置及其方法。所提供的振动辅助划线装置包括：夹紧装置，用于夹紧用于划线衬底的划线轮; 具有构造在其上的压力装置的移动基座，所述压力装置通过所述夹紧装置向所述划线轮施加压力; 以及振动发生器，其构造在所述夹持装置上，并且通过所述夹紧装置向所述划线轮提供振动力，从而增加所述中间裂纹的深度。

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