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1. 发明申请

US20180301074A1 SCANNING DRIVING CIRCUITS HAVING CHARGE SHARING AND DISPLAY PANELS 审中-公开
公开(公告)号：US20180301074A1
公开(公告)日：2018-10-18
申请号：US15520551
申请日：2017-04-06
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.
发明人： Longqiang SHI
IPC分类号： G09G3/20
CPC分类号： G09G3/20 , G09G2310/0267 , G09G2310/06 , G09G2310/08
摘要： The present disclosure relates to a scanning driving circuit having charge sharing and a display panel. The scanning driving circuit includes: a driving unit is configured to receive scanning signals at a previous level, clock signals at a current level, and scanning signals at a next level, and to generate the scanning signals at the current level, a pull-down maintain unit is configured to conduct a pull down process with respect to a pull down controlling signal point of the driving unit, a share unit is configured to receive first clock signals, second clock signals, first voltage signals, and second voltage signals, and to control an electric potential of a rising edge and a falling edge of the scanning signals at the current level via the first clock signals, the second clock signals, the first voltage signals, and the second voltage signals.

2. 发明申请

US20180211627A1 GATE DRIVING CIRCUITS AND LIQUID CRYSTAL DEVICES 审中-公开
公开(公告)号：US20180211627A1
公开(公告)日：2018-07-26
申请号：US15328900
申请日：2017-01-17
申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Longqiang SHI , Shu Jhih CHEN
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0814 , G09G2310/0289
摘要： The present disclosure relates to a gate driving circuit including N number of cascaded-connected GOA driving units, wherein the GOA driving units at each of the levels includes a pull-up control circuit, a pull-up circuit, a level transfer circuit, a boast capacitor, and a pull-down holding circuit. The pull-down holding circuit of the GOA driving unit of the n-th level and the pull-down holding circuit of the GOA driving unit of the (n+1)-th level are turned on alternatedly. The pull-down holding circuit of die GOA driving unit of the n-th level may keep the potential of the node within the GOA driving units at the n-th and the (n+1)-th level in the off state, wherein n=1, 3, 5, . . . , N−1, and N is an even number greater than one. The present disclosure also relates to a LCD including the above gate driving circuit.

3. 发明申请

US20180108719A1 OLED DISPLAY DEVICE AND MANUFACTURE METHOD THEREOF 有权
公开(公告)号：US20180108719A1
公开(公告)日：2018-04-19
申请号：US15821844
申请日：2017-11-24
申请人： Shenzhen China Star Optoelectronics Technology Co. , Ltd.
发明人： Longqiang SHI , Yifan WANG
IPC分类号： H01L27/32 , H01L51/00 , H01L51/52 , H01L51/56
CPC分类号： H01L27/3253 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L51/0024 , H01L51/5206 , H01L51/5221 , H01L51/56 , H01L2227/323 , H01L2251/301 , H01L2251/308 , H01L2251/558
摘要： A method for manufacturing an OLED display device that includes pixel areas is provided. A first and a second substrates are provided. TFTs are arranged on the first substrate. A passivation layer is formed on the TFTs such that the passivation layer includes a concave area formed in a surface thereof to expose a part of a drain of each of the TFTs. A transparent anode is formed on the second substrate. Partition walls are arranged on the transparent anode to defined therebetween transmission holes respectively corresponding to the pixel areas. An organic layer is formed on the transparent anode and located in the transmission holes. A metal cathode is formed on the organic layer and the partition walls such that the metal cathode is receivable into the concave area and electrically engageable with the exposed part of the drain of each of the TFTs.

4. 发明申请

US20170141141A1 MANUFACTURE METHOD OF DUAL GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE AND STRUCTURE THEREOF 有权
公开(公告)号：US20170141141A1
公开(公告)日：2017-05-18
申请号：US14770470
申请日：2015-05-21
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd.
发明人： Shimin GE , Hejing ZHANG , Chihyuan TSENG , Chihyu SU , Wenhui LI , Longqiang SHI , Xiaowen LV
IPC分类号： H01L27/12 , H01L29/49 , H01L29/24 , H01L29/786 , H01L21/02
CPC分类号： H01L27/1288 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/4908 , H01L29/78648 , H01L29/7869
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (53′) with ion doping process; the method implements the patterning process to the bottom gate isolation layer (31) and the top gate isolation layer (32) at the same time with one photo process; the method implements patterning process to the second, third metal layers at the same time to obtain the first source (81), the first drain (82), the second source (83), the second drain (84), the first top gate (71) and the second top gate (72) with one photo process; the method implements patterning process to the second flat layer (9), the passivation layer (8) and the top gate isolation layer (32) at the same time with one photo process, to reduce the number of the photo processes to nine for effectively simplifying the manufacture process, raising the production efficiency and lowering the production cost.

5. 发明申请

US20170141127A1 METHOD FOR MANUFACTURING TFT SUBSTRATE AND STRUCTURE THEREOF 有权
公开(公告)号：US20170141127A1
公开(公告)日：2017-05-18
申请号：US14759198
申请日：2015-05-25
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Longqiang SHI , Baixiang HAN
IPC分类号： H01L27/12 , H01L29/49 , H01L29/786 , H01L21/02
CPC分类号： H01L27/124 , G09G3/3225 , G09G2300/043 , G09G2300/0465 , H01L21/02565 , H01L21/02631 , H01L21/84 , H01L27/1225 , H01L27/127 , H01L29/4908 , H01L29/78645 , H01L29/7869 , H01L29/78696
摘要： The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing the TFT substrate uses a connection semiconductor (42) that is formed in a semiconductor layer and is subjected to N-type heavy doping to connect a first semiconductor (41) and a second semiconductor (43) so as to connect the first TFT and the second TFT in series. The N-type heavily doped connection semiconductor (42) substitutes a connection electrode that is formed in a second metal layer in prior art techniques for preventing the design rules of the connection electrode and the second metal layer from being narrowed due to the connection electrode being collectively present on the second metal layer with signal lines of a data line and a voltage supply line and for facilitating increase of an aperture ratio and definition of a display panel. The present invention also provides a TFT substrate structure, which has a simple structure and possesses a high aperture ratio and high definition.

6. 发明申请

US20170110484A1 TFT SUBSTRATE STRUCTURE 有权
公开(公告)号：US20170110484A1
公开(公告)日：2017-04-20
申请号：US15394424
申请日：2016-12-29
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Hejing ZHANG , Chihyuan TSENG , Chihyu SU , Wenhui LI , Longqiang SHI , Xiaowen LV
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1229 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/78663 , H01L29/78669 , H01L29/78672 , H01L29/78678 , H01L29/7869
摘要： The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

7. 发明申请

US20160343785A1 OLED DISPLAY DEVICE AND MANUFACTURE METHOD THEREOF 有权
标题翻译： OLED显示装置及其制造方法
公开(公告)号：US20160343785A1
公开(公告)日：2016-11-24
申请号：US14424965
申请日：2015-02-09
申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Longqiang SHI , Yifan WANG
IPC分类号： H01L27/32 , H01L51/56 , H01L51/00 , H01L51/52
CPC分类号： H01L27/3253 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L51/0024 , H01L51/5206 , H01L51/5221 , H01L51/56 , H01L2227/323 , H01L2251/301 , H01L2251/308 , H01L2251/558
摘要： The present invention provides an OLED display device and a manufacture method thereof, and the OLED display device comprises a first substrate (100), a second substrate (200) spaced and oppositely located with the first substrate (100), a plurality of thin film transistors (101) located at an inner surface of the first substrate (100), a transparent anode (201) located at an inner surface of the second substrate (200), a plurality of partition walls (202) located on the transparent anode (201), transmission holes (203) formed among the partition walls (202), an organic layer (204) located on the transparent anode (201) and in the transmission holes (203), a metal cathode (205) located on the organic layer (204) and the partition walls (202), and the metal cathode (205) is electrically connected to a drain of the thin film transistor (101). The OLED display device possesses a high aperture ratio and high transmittance. The manufacture method of the OLED display device provided by the present invention can manufacture an OLED display device with a high aperture ratio and high transmittance, and promote the yield and the productivity.
摘要翻译：本发明提供一种OLED显示装置及其制造方法，所述OLED显示装置包括第一基板（100），与所述第一基板（100）间隔开并相对定位的第二基板（200），多个薄膜位于第一基板（100）的内表面处的晶体管（101），位于第二基板（200）的内表面处的透明阳极（201），位于透明阳极上的多个分隔壁（202） 201），形成在所述分隔壁（202）中的传输孔（203），位于所述透明阳极（201）和所述透射孔（203）中的有机层（204），位于所述有机层上的金属阴极层（204）和分隔壁（202），并且金属阴极（205）电连接到薄膜晶体管（101）的漏极。 OLED显示装置具有高开口率和高透射率。本发明提供的OLED显示装置的制造方法可以制造具有高开口率和高透射率的OLED显示装置，并提高产量和生产率。

8. 发明申请

US20180336844A1 DRIVING CIRCUIT AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
公开(公告)号：US20180336844A1
公开(公告)日：2018-11-22
申请号：US15544016
申请日：2017-04-28
申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Longqiang SHI
IPC分类号： G09G3/34 , G09G3/36
CPC分类号： G09G3/3406 , G09G3/3413 , G09G3/3648 , G09G2320/0233 , G09G2320/0626
摘要： Disclosed is a driving circuit, comprising first to fifth electrical switches, a driving electrical switch and a capacitor. The control end and second end of the first switch are coupled to a driving scan line and a driving switch second end. The control end, first end and second end of the driving switch are coupled to the capacitor, a second switch second end and a fourth switch first end. The control end of the second switch is coupled to the driving scan line. The control end of the third switch is coupled to a first compensation scan line. The control end and second end of the fourth switch are coupled to a fifth switch second end and an organic light emitting diode anode. The control end and first end of the fifth switch are coupled to a second compensation scan line and the third switch control end.

9. 发明申请

US20180211613A1 A GOA CIRCUIT AND A LIQUID CRYSTAL DISPLAY 审中-公开
公开(公告)号：US20180211613A1
公开(公告)日：2018-07-26
申请号：US15327637
申请日：2017-01-16
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Longqiang SHI
IPC分类号： G09G3/36 , G02F1/133
CPC分类号： G09G3/3674 , G02F1/13306 , G09G3/36 , G09G3/3677 , G09G2300/0408 , G09G2310/0264
摘要： The present application discloses a GOA circuit and a liquid crystal display, the GOA circuit including: a pull-up circuit, including a first switching transistor; a pull-down circuit, including a second switching transistor; a scanning output terminal coupled to the second connecting terminal of the first switching transistor, and a first connecting terminal of the second switching transistor; and a clamping circuit, coupling to the second connecting terminals of the first switching transistor and the second switching transistor, and coupling to the control terminals of the first switching transistor and the second switching transistor, when the scanning output terminal outputting a first electric level, controlling the electric level of the control terminal of the second switching transistor lower than the electric level of the second connecting terminal of the second switching transistor. The present application prevents the transistor from erroneously turning on or off due to the turn on threshold shift.

10. 发明申请

US20170110483A1 TFT SUBSTRATE STRUCTURE 有权
公开(公告)号：US20170110483A1
公开(公告)日：2017-04-20
申请号：US15393690
申请日：2016-12-29
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Hejing ZHANG , Chihyuan TSENG , Chihyu SU , Wenhui LI , Longqiang SHI , Xiaowen LV
IPC分类号： H01L27/12 , H01L29/786 , H01L27/32
CPC分类号： H01L27/1225 , H01L27/1222 , H01L27/1229 , H01L27/124 , H01L27/1251 , H01L27/3262 , H01L29/78663 , H01L29/78669 , H01L29/78672 , H01L29/78678 , H01L29/7869
摘要： The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

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