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1. 发明申请

US20070287271A1 Deposition of nano-crystal silicon using a single wafer chamber 审中-公开
公开(公告)号：US20070287271A1
公开(公告)日：2007-12-13
申请号：US11893301
申请日：2007-08-13
申请人： Sheeba Panayil , Ming Li , Shulin Wang , Jonathan Pickering
发明人： Sheeba Panayil , Ming Li , Shulin Wang , Jonathan Pickering
IPC分类号： H01L21/20 , B05C5/00
CPC分类号： C23C16/24 , Y10S977/814
摘要： Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.

2. 发明申请

US20060019469A1 Deposition of nano-crystal silicon using a single wafer chamber 失效
标题翻译：使用单个晶片室沉积纳米晶体硅
公开(公告)号：US20060019469A1
公开(公告)日：2006-01-26
申请号：US10898094
申请日：2004-07-23
申请人： Sheeba Panayil , Ming Li , Shulin Wang , Jonathan Pickering
发明人： Sheeba Panayil , Ming Li , Shulin Wang , Jonathan Pickering
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： C23C16/24 , Y10S977/814
摘要： Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.
摘要翻译：用于在衬底上沉积纳米晶体硅层的方法的许多实施例。在本发明的一个实施例中，将衬底放置在单个晶片室中并加热到约300℃至约490℃的温度。硅源也被馈送到单个晶片室中。

3. 发明申请

US20060024926A1 Method of forming a controlled and uniform lightly phosphorous doped silicon film 失效
标题翻译：形成受控均匀的轻掺磷硅膜的方法
公开(公告)号：US20060024926A1
公开(公告)日：2006-02-02
申请号：US11229224
申请日：2005-09-16
申请人： Li Fu , Sheeba Panayil , Shulin Wang , Christopher Quentin , Lee Luo , Aihua Chen , Zianzhi Tao
发明人： Li Fu , Sheeba Panayil , Shulin Wang , Christopher Quentin , Lee Luo , Aihua Chen , Zianzhi Tao
IPC分类号： H01L21/20
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
摘要翻译：形成轻掺磷硅膜的方法。提供基板。使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。稀释的磷源气体的磷浓度为1％。磷源气体和乙硅烷气体的流量比小于1:100。轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

4. 发明授权

US07341907B2 Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon 失效
标题翻译：用于半球形晶粒硅和纳米晶粒尺寸多晶硅的单晶片热CVD工艺
公开(公告)号：US07341907B2
公开(公告)日：2008-03-11
申请号：US11099081
申请日：2005-04-05
申请人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Suryanarayanan Iyer
发明人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Suryanarayanan Iyer
IPC分类号： H01L21/8242
CPC分类号： C23C16/24 , C23C16/56 , H01L21/28035 , H01L21/28525 , H01L28/84 , H01L29/4925
摘要： Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
摘要翻译：提供了沉积半球形硅层和纳米晶粒尺寸多晶硅层的方法。半球形硅层和纳米晶粒尺寸的多晶硅层沉积在单个基板化学气相沉积室中。半球形晶粒硅层和纳米晶粒尺寸的多晶硅层可用作半导体器件中的电极层。在一个方面，提供两步沉积工艺以形成具有减小的粗糙度的纳米晶粒尺寸的多晶硅层。

5. 发明申请

US20060223333A1 Single wafer thermal CVD processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon 失效
标题翻译：用于半球形晶粒硅和纳米晶粒尺寸多晶硅的单晶片热CVD工艺
公开(公告)号：US20060223333A1
公开(公告)日：2006-10-05
申请号：US11099081
申请日：2005-04-05
申请人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Iyer
发明人： Ming Li , Kevin Cunningham , Sheeba Panayil , Guangcai Xing , R. Iyer
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/24 , C23C16/56 , H01L21/28035 , H01L21/28525 , H01L28/84 , H01L29/4925
摘要： Methods for depositing hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are provided. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers are deposited in single substrate chemical vapor deposition chambers. The hemispherical grained silicon layers and nanocrystalline grain-sized polysilicon layers may be used as electrode layers in semiconductor devices. In one aspect, a two step deposition process is provided to form a nanocrystalline grain-sized polysilicon layer with a reduced roughness.
摘要翻译：提供了沉积半球形硅层和纳米晶粒尺寸多晶硅层的方法。半球形硅层和纳米晶粒尺寸的多晶硅层沉积在单个基板化学气相沉积室中。半球形晶粒硅层和纳米晶粒尺寸的多晶硅层可用作半导体器件中的电极层。在一个方面，提供两步沉积工艺以形成具有减小的粗糙度的纳米晶粒尺寸的多晶硅层。

6. 发明申请

US20070257008A1 Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：在等离子体反应器中处理工件的方法，其中等离子体源功率施加器和工件相对于彼此动态调节
公开(公告)号：US20070257008A1
公开(公告)日：2007-11-08
申请号：US11416744
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/32568 , H01J37/321
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicators, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括将（a）工件，（b）外源功率施加器，围绕径向倾斜轴线旋转至等离子体工艺参数的空间分布具有至少几乎最小的非 - 相对于共同的对称轴线对称，并且将内源功率施加器相对于外源功率施加器沿对称轴平移到空间分布具有至少几乎最小的非均匀性的位置工件。

7. 发明申请

US20070256787A1 Plasma reactor with a dynamically adjustable plasma source power applicator 有权
标题翻译：具有动态可调等离子体源功率施加器的等离子体反应器
公开(公告)号：US20070256787A1
公开(公告)日：2007-11-08
申请号：US11416802
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.
摘要翻译：用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置，腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

8. 发明申请

US20070256784A1 Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：一种具有用于相对于彼此动态地调节等离子体源功率施加器和工件的装置的等离子体反应器
公开(公告)号：US20070256784A1
公开(公告)日：2007-11-08
申请号：US11416547
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01J37/321 , H01L21/68764
摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.
摘要翻译：一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置，或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

9. 发明申请

US20070257009A1 Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
标题翻译：使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法
公开(公告)号：US20070257009A1
公开(公告)日：2007-11-08
申请号：US11416801
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

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