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1. 发明授权

US06274513B1 Method of oxidizing a nitride film on a conductive substrate 有权
标题翻译：在导电性基板上氧化氮化膜的方法
公开(公告)号：US06274513B1
公开(公告)日：2001-08-14
申请号：US09644884
申请日：2000-08-23
申请人： Shangjr Gwo , Ya-Chang Chou , Tom Chen , Tien-Sheng Chao
发明人： Shangjr Gwo , Ya-Chang Chou , Tom Chen , Tien-Sheng Chao
IPC分类号： H01L2131
CPC分类号： H01L21/3105 , H01L21/0337 , H01L21/3086 , H01L21/3144 , Y10S977/859
摘要： The present invention discloses a method of oxidizing a nitride film on a conductive substrate comprising the following steps. First, a conductive substrate is provided, and a nitride film is formed on the main surface of the conductive substrate by performing film deposition process or directly nitridating the surface region of the conductive substrate. Then, a local electrode terminal (such as a conductive probe of a scanning-probe microscope) is provided, and a strong electric field is locally generated between the electrode terminal and the conductive substrate in an oxidizing environment, wherein the strong electric field passes through the nitride film, thereby oxidizing the nitride film region passed by the electric field. The method of oxidizing a nitride film according to the present invention can be applied to define patterns on a nitride film, to record information as memory media, and to form growth templates for the use in chemical selective formation processes.
摘要翻译：本发明公开了一种在导电基板上氧化氮化物膜的方法，包括以下步骤。首先，提供导电性基板，通过进行成膜法或直接对导电性基板的表面区域进行氮化，在导电性基板的主面上形成氮化膜。然后，提供局部电极端子（如扫描探针显微镜的导电探针），并且在氧化环境中在电极端子和导电基板之间局部产生强电场，其中强电场通过从而氧化通过电场的氮化物膜区域。根据本发明的氧化氮化膜的方法可以用于限定氮化膜上的图案，记录信息作为存储介质，并形成用于化学选择性形成工艺的生长模板。

2. 发明授权

US5942286A Method for manufacturing organic monomolecular film 失效
标题翻译：有机单分子膜的制造方法
公开(公告)号：US5942286A
公开(公告)日：1999-08-24
申请号：US733990
申请日：1996-10-18
申请人： Hirotaka Ohno , Shangjr Gwo , Hiroshi Tokumoto
发明人： Hirotaka Ohno , Shangjr Gwo , Hiroshi Tokumoto
IPC分类号： B05D1/20 , B01J19/00 , B05D1/18 , B82B3/00 , C30B7/00 , C30B23/02 , C30B29/54 , H01L21/203 , H01L21/205 , H01L21/363 , H01L51/05 , H01L51/40 , B05D3/00
CPC分类号： B82Y30/00 , B05D1/185 , B82B3/00 , B82Y40/00 , C30B23/02 , C30B29/02 , C30B29/54 , C30B7/00
摘要： The present invention provides a method for selectively allowing film-forming molecules to be chemically adsorbed onto an Si substrate to produce a good and robust organic monomolecular film, wherein molecules with SH groups are chemically adsorbed onto the Si substrate to form a monomolecular film of the molecules by heating an As molecular beam source 4 to allow a monoatomic layer thickness of arsenic to be adsorbed onto the clean surface of the Si substrate set on a sample stage 3 and then immersing the Si substrate terminated by arsenic in a solution containing molecules with SH groups.
摘要翻译：本发明提供了一种选择性地使成膜分子化学吸附到Si衬底上以产生良好和坚固的有机单分子膜的方法，其中具有SH基团的分子被化学吸附到Si衬底上以形成单分子膜通过加热As分子束源4以允许砷的单原子层厚度被吸附到设置在样品台3上的Si衬底的清洁表面上，然后将由砷终止的Si衬底浸入含SH分子的溶液中团体

3. 发明申请

US20090159995A1 Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns 有权
标题翻译：在带电荷图案的电荷存储装置上沉积颗粒的方法和电荷图案的形成方法
公开(公告)号：US20090159995A1
公开(公告)日：2009-06-25
申请号：US12000944
申请日：2007-12-19
申请人： Shangjr Gwo , Hsien-Te Tseng
发明人： Shangjr Gwo , Hsien-Te Tseng
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01L29/792 , B82Y10/00
摘要： The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas.
摘要翻译：本发明公开了一种在具有电荷图案的电荷存储装置上沉积颗粒的方法和用于电荷模式的形成方法。电荷图案的形成方法包括提供具有导电衬底和电荷存储介质层的电荷存储装置。电荷存储装置设置在真空或无水环境中。电极和导电衬底分别用于传导第一电压和第二电压以形成电场。然后通过电场将电荷存储到电荷存储装置的电荷存储介质层中，然后形成电荷模式。因此，颗粒沉积在电荷图案限定区域上。

4. 发明授权

US07151284B2 Structures for light emitting devices with integrated multilayer mirrors 失效
标题翻译：具有集成多层反射镜的发光器件的结构
公开(公告)号：US07151284B2
公开(公告)日：2006-12-19
申请号：US10843518
申请日：2004-05-11
申请人： Shangjr Gwo
发明人： Shangjr Gwo
IPC分类号： H01L29/24
CPC分类号： B82Y20/00 , H01S5/021 , H01S5/041 , H01S5/18358 , H01S5/18369 , H01S5/18388 , H01S5/18397 , H01S5/3072 , H01S5/34333 , H01S2304/00
摘要： A substrate for supporting epitaxial growth of light emitting semiconductor devices having a non-crystalline multilayer reflection controlling stack under a thin layer of single crystal silicon is shown. A III-Nitride or other semiconductor stimulated emission device is grown on the thin layer of silicon.
摘要翻译：示出了用于支持在单晶硅薄层下方具有非结晶多层反射控制层的发光半导体器件的外延生长的衬底。 III型氮化物或其他半导体受激发射器件生长在硅薄层上。

5. 发明授权

US08518561B2 Antireflection structures with an exceptional low refractive index and devices containing the same 有权
$Antireflection structures with an exceptional low refractive index and devices containing the same$
公开(公告)号：US08518561B2
公开(公告)日：2013-08-27
申请号：US13005637
申请日：2011-01-13
申请人： Rong-Ming Ho , Han-Yu Hsueh , Ming-Shiuan She , Hung-Ying Chen , Shangjr Gwo
发明人： Rong-Ming Ho , Han-Yu Hsueh , Ming-Shiuan She , Hung-Ying Chen , Shangjr Gwo
IPC分类号： B32B15/04 , B32B17/06
CPC分类号： C09D5/006 , B05D1/322 , B05D5/02 , B82Y30/00 , B82Y40/00 , G02B1/118 , G02B1/12 , H01L21/02104 , Y10T428/1036 , Y10T428/1045 , Y10T428/12528 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997
摘要： Nanoporous polymers with gyroid nanochannels can be fabricated from the self-assembly of degradable block copolymer, polystyrene-b-poly(L-lactide) (PS-PLLA), followed by the hydrolysis of PLLA blocks. A well-defined nanohybrid material with SiO2 gyroid nanostructure in a PS matrix can be obtained using the nanoporous PS as a template for the sol-gel reaction. After subsequent UV degradation of the PS matrix, a highly porous inorganic gyroid network remains, yielding a single-component material with an exceptionally low refractive index (as low as 1.1).

6. 发明申请

US20110104401A1 ANITREFLECTION STRUCTURES WITH AN EXCEPTIONAL LOW REFRACTIVE INDEX AND DEVICES CONTAINING THE SAME 有权
标题翻译：具有特殊低折射率指标的反射结构及其相关装置
公开(公告)号：US20110104401A1
公开(公告)日：2011-05-05
申请号：US13005637
申请日：2011-01-13
申请人： Rong-Ming Ho , Han-yu Hsueh , Ming-Shiuan She , Hung-Ying Chen , Shangjr Gwo
发明人： Rong-Ming Ho , Han-yu Hsueh , Ming-Shiuan She , Hung-Ying Chen , Shangjr Gwo
IPC分类号： B32B18/00 , B32B3/26 , C08J7/18 , B32B17/00
CPC分类号： C09D5/006 , B05D1/322 , B05D5/02 , B82Y30/00 , B82Y40/00 , G02B1/118 , G02B1/12 , H01L21/02104 , Y10T428/1036 , Y10T428/1045 , Y10T428/12528 , Y10T428/249953 , Y10T428/249969 , Y10T428/24997
摘要： Nanoporous polymers with gyroid nanochannels can be fabricated from the self-assembly of degradable block copolymer, polystyrene-b-poly(L-lactide) (PS-PLLA), followed by the hydrolysis of PLLA blocks. A well-defined nanohybrid material with SiO2 gyroid nanostructure in a PS matrix can be obtained using the nanoporous PS as a template for the sol-gel reaction. After subsequent UV degradation of the PS matrix, a highly porous inorganic gyroid network remains, yielding a single-component material with an exceptionally low refractive index (as low as 1.1).
摘要翻译：具有旋转纳米通道的纳米多孔聚合物可以由可降解嵌段共聚物，聚苯乙烯-b-聚（L-丙交酯）（PS-PLLA）的自组装，然后PLLA嵌段的水解制备。使用纳米多孔PS作为溶胶 - 凝胶反应的模板，可以获得在PS基体中具有SiO 2回旋纳米结构的明确定义的纳米杂化材料。在PS基体的随后的UV降解之后，残留高度多孔的无机回旋网络，产生具有极低折射率（低至1.1）的单组分材料。

7. 发明授权

US07829918B2 Field effect transistor based sensor 有权
标题翻译：基于场效应晶体管的传感器
公开(公告)号：US07829918B2
公开(公告)日：2010-11-09
申请号：US12432071
申请日：2009-04-29
申请人： Jer-Liang Andrew Yeh , Shangjr Gwo
发明人： Jer-Liang Andrew Yeh , Shangjr Gwo
IPC分类号： H01L29/78
CPC分类号： G01N27/414
摘要： The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.
摘要翻译：本发明公开了一种基于FET的传感器。根据本发明实施例的基于FET的传感器包括衬底，InN材料层，源极端子和漏极端子。 InN材料层形成在衬底上并具有上表面。其上表面提供分析物感测区域。 InN材料层用作源极端子和漏极端子之间的电流通道。因此，被分析物感测区域吸附的离子引起流过电流通道的电流的变化，并且该变化被进一步解释为分析物的特征。

8. 发明授权

US07803261B2 Method to deposit particles on charge storage apparatus with charge patterns and forming method for charge patterns 有权
标题翻译：在带电荷图案的电荷存储装置上沉积颗粒的方法和电荷图案的形成方法
公开(公告)号：US07803261B2
公开(公告)日：2010-09-28
申请号：US12000944
申请日：2007-12-19
申请人： Shangjr Gwo , Hsien-Te Tseng
发明人： Shangjr Gwo , Hsien-Te Tseng
IPC分类号： B01J8/00
CPC分类号： H01L29/792 , B82Y10/00
摘要： The present invention discloses a method to deposit particles on a charge storage apparatus with charge patterns and a forming method for charge patterns. The forming method for charge patterns includes providing the charge storage apparatus having an electrically conducting substrate and a charge storage media layer. The charge storage apparatus is disposed in a vacuum or an anhydrous environment. An electrode and the electrically conducting substrate are utilized to conduct a first voltage and a second voltage respectively to form an electric field. Charges are then stored into the charge storage media layer of the charge storage apparatus through the electric field and the charge patterns are then formed. Accordingly, particles are deposited on the charge pattern-defined areas.
摘要翻译：本发明公开了一种在具有电荷图案的电荷存储装置上沉积颗粒的方法和用于电荷模式的形成方法。电荷图案的形成方法包括提供具有导电衬底和电荷存储介质层的电荷存储装置。电荷存储装置设置在真空或无水环境中。电极和导电衬底分别用于传导第一电压和第二电压以形成电场。然后通过电场将电荷存储到电荷存储装置的电荷存储介质层中，然后形成电荷模式。因此，颗粒沉积在电荷图案限定区域上。

9. 发明申请

US20100012987A1 Field Effect Transistor Based Sensor 有权
标题翻译：基于场效应晶体管的传感器
公开(公告)号：US20100012987A1
公开(公告)日：2010-01-21
申请号：US12432071
申请日：2009-04-29
申请人： Jer-Liang Andrew Yeh , Shangjr Gwo
发明人： Jer-Liang Andrew Yeh , Shangjr Gwo
IPC分类号： H01L29/78
CPC分类号： G01N27/414
摘要： The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.
摘要翻译：本发明公开了一种基于FET的传感器。根据本发明实施例的基于FET的传感器包括衬底，InN材料层，源极端子和漏极端子。 InN材料层形成在衬底上并具有上表面。其上表面提供分析物感测区域。 InN材料层用作源极端子和漏极端子之间的电流通道。因此，被分析物感测区域吸附的离子引起流过电流通道的电流的变化，并且该变化被进一步解释为分析物的特征。

10. 发明授权

US07012016B2 Method for growing group-III nitride semiconductor heterostructure on silicon substrate 失效
标题翻译：在硅衬底上生长III族氮化物半导体异质结的方法
公开(公告)号：US07012016B2
公开(公告)日：2006-03-14
申请号：US10714649
申请日：2003-11-18
申请人： Shangjr Gwo
发明人： Shangjr Gwo
IPC分类号： H01L21/28
CPC分类号： H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/0254 , H01L21/3247 , H01L29/045
摘要： The present invention provides a method for growing group-III nitride semiconductor heteroepitaxial structures on a silicon (111) substrate by using a coincidently matched multiple-layer buffer that can be grown on the Si(111) substrate. The coincidently matched multiple-layer buffer comprises a single-crystal silicon nitride (Si3N4) layer that is formed in a controlled manner by introducing reactive nitrogen plasma or ammonia to the Si(111) substrate at a suitably high temperature. Then, an AlN buffer layer or other group-III nitride buffer layer is grown epitaxially on the single-crystal silicon nitride layer. Thereafter, the GaN epitaxial layer or group-III semiconductor heteroepitaxial structure can be grown on the coincidently matched multiple-layer buffer.
摘要翻译：本发明提供一种通过使用可在Si（111）衬底上生长的重合匹配多层缓冲层，在硅（111）衬底上生长III族氮化物半导体异质外延结构的方法。一致匹配的多层缓冲器包括通过将反应性氮等离子体或氨引入到受控方式形成的单晶氮化硅（Si 3 N 4 N 4 N 4）层 Si（111）衬底在合适的高温下。然后，在单晶氮化硅层上外延生长AlN缓冲层或其它III族氮化物缓冲层。此后，可以在一致匹配的多层缓冲器上生长GaN外延层或III族半导体异质外延结构。

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