专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06682627B2 Process chamber having a corrosion-resistant wall and method 失效
标题翻译：处理室具有耐腐蚀壁和方法
公开(公告)号：US06682627B2
公开(公告)日：2004-01-27
申请号：US09962626
申请日：2001-09-24
申请人： Shamouil Shamouilian , Jennifer Y. Sun , Ananda H. Kumar
发明人： Shamouil Shamouilian , Jennifer Y. Sun , Ananda H. Kumar
IPC分类号： H05H100
CPC分类号： C04B41/009 , C04B41/4842 , C04B41/83 , H01J37/32467 , H01J2237/022 , C04B35/00 , C04B35/565
摘要： A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.
摘要翻译：衬底处理室具有衬底支撑件，气体供应器，气体排出器，气体激发器和围绕衬底支撑件的壁，所述壁具有至少部分地被氟化聚合物渗透的多孔陶瓷材料，由此，衬底支撑件可以由气体源引入的气体进行处理，由气体激发器激励并被排气排出。

2. 发明授权

US06721162B2 Electrostatic chuck having composite dielectric layer and method of manufacture 有权
标题翻译：具有复合介电层的静电吸盘及其制造方法
公开(公告)号：US06721162B2
公开(公告)日：2004-04-13
申请号：US10095914
申请日：2002-03-12
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.
摘要翻译：静电吸盘具有能够带电的电极，以静电保持基板。复合层覆盖电极。复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成材料。卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

3. 发明授权

US06310755B1 Electrostatic chuck having gas cavity and method 有权
标题翻译：具有气腔和方法的静电吸盘
公开(公告)号：US06310755B1
公开(公告)日：2001-10-30
申请号：US09307215
申请日：1999-05-07
申请人： Arnold Kholodenko , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Ananda H. Kumar
发明人： Arnold Kholodenko , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Ananda H. Kumar
IPC分类号： H01G2300
CPC分类号： C04B35/565 , C04B35/185 , C04B35/806 , C04B37/006 , C04B37/026 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2235/402 , C04B2235/5248 , C04B2235/616 , C04B2235/96 , C04B2235/9607 , C04B2237/121 , C04B2237/343 , C04B2237/365 , C04B2237/366 , C04B2237/405 , C04B2237/60 , C22C29/00 , C22C2204/00 , H01L21/67109 , H01L21/6831 , H01L21/6833 , C04B38/00 , C04B41/4523
摘要： An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.
摘要翻译：静电吸盘55具有静电构件100，静电构件100包括具有适于接纳衬底30的表面120的电介质115.电介质115覆盖电极105，电极105可充电以静电保持衬底30.静电构件100下方的支撑件190具有空腔300适于保持气体以用作热绝缘体，以调节从静电卡盘55到腔室25的表面120的热量流动。空腔300具有截面轮廓，其形状设置成提供预定的跨越衬底30的温度分布。

4. 发明授权

US6095084A High density plasma process chamber 失效
标题翻译：高密度等离子体处理室
公开(公告)号：US6095084A
公开(公告)日：2000-08-01
申请号：US893599
申请日：1997-07-14
申请人： Shamouil Shamouilian , Ananda H. Kumar , Arnold Kholodenko , Dennis S. Grimard , Jonathan D. Mohn , Michael G. Chafin , Kenneth S. Collins
发明人： Shamouil Shamouilian , Ananda H. Kumar , Arnold Kholodenko , Dennis S. Grimard , Jonathan D. Mohn , Michael G. Chafin , Kenneth S. Collins
IPC分类号： C23C16/00
CPC分类号： C23C16/00
摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.
摘要翻译：用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。电感天线135用于从等离子体区域中的处理气体形成感应等离子体。腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度，在室55的等离子体区65中的高度方向性的等离子体。

5. 发明授权

US5751537A Multielectrode electrostatic chuck with fuses 失效
标题翻译：带保险丝的多电极静电卡盘
公开(公告)号：US5751537A
公开(公告)日：1998-05-12
申请号：US641938
申请日：1996-05-02
申请人： Ananda H. Kumar , Shamouil Shamouilian
发明人： Ananda H. Kumar , Shamouil Shamouilian
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： A failure resistant electrostatic chuck 20 for holding a substrate 35 during processing of the substrate 35, is described. The chuck 20 comprises a plurality of electrodes 25 covered by an insulator 30, the electrodes 25 capable of electrostatically holding a substrate 35 when a voltage is applied thereto. An electrical power bus 40 has a plurality of output terminals 45 that conduct voltage to the electrodes 25. Fuses 50 electrically connect the electrodes 25 to the output terminals 45 of the power bus 40, each fuse 50 connecting at least one electrode 25 in series to an output terminal from the power bus 40. The fuses 50 are capable of electrically disconnecting the electrode 25 from the output terminals 45 when the insulator 30 punctures and exposes the electrode 25 to the process environment causing a current to flow through the fuse 50. A current detector 175 and electrical counter 180 can be used to provide early detection and counting of the number of failures of the electrodes 25 by detecting the current discharges through the fuses 50.
摘要翻译：描述了用于在基板35的加工期间保持基板35的防破坏静电卡盘20。卡盘20包括被绝缘体30覆盖的多个电极25，当施加电压时能够静电保持基板35的电极25。电力总线40具有向电极25传导电压的多个输出端子45.保险丝50将电极25电连接到电力总线40的输出端子45，每个保险丝50将至少一个电极25串联连接到来自电源总线40的输出端子。当绝缘体30刺穿并将电极25暴露于使电流流过保险丝50的处理环境时，熔断器50能够将电极25与输出端子45电断开。电流检测器175和电计数器180可以用于通过检测通过保险丝50的电流放电来提供对电极25的故障数量的早期检测和计数。

6. 发明授权

US06538872B1 Electrostatic chuck having heater and method 失效
标题翻译：具有加热器和方法的静电吸盘
公开(公告)号：US06538872B1
公开(公告)日：2003-03-25
申请号：US09307214
申请日：2001-11-05
申请人： You Wang , Shamouil Shamouilian , Arnold Kholodenko , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
发明人： You Wang , Shamouil Shamouilian , Arnold Kholodenko , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Wing L. Cheng , Ananda H. Kumar
IPC分类号： H01G2300
CPC分类号： H01L21/6833 , H01L21/67103
摘要： An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.
摘要翻译：用于保持基板30的静电卡盘55包括由覆盖电极105的电介质115制成的静电构件100，电极105可充电以静电保持基板30.包括加热器235的基座175与静电构件100接合。基底可以由复合材料制成，例如渗透有金属的多孔陶瓷，并且可以通过接合层与静电部件接合。

7. 发明授权

US06490144B1 Support for supporting a substrate in a process chamber 失效
标题翻译：用于支撑处理室中的基底
公开(公告)号：US06490144B1
公开(公告)日：2002-12-03
申请号：US09450791
申请日：1999-11-29
申请人： Kadthala R. Narendrnath , Syed H. Askari , Dennis S. Grimard , Surinder S. Bedi , Ananda H. Kumar , Shamouil Shamouilian
发明人： Kadthala R. Narendrnath , Syed H. Askari , Dennis S. Grimard , Surinder S. Bedi , Ananda H. Kumar , Shamouil Shamouilian
IPC分类号： H02N1300
CPC分类号： H01L21/67098 , H01L21/6831 , H02N13/00
摘要： A chamber 30 for processing a substrate 25 comprises a support 55 comprising a dielectric 60 enveloping an electrode 70. The electrode 70 may be chargeable to electrostatically hold the substrate 25 or may be chargeable to form an energized gas in the chamber 30 to process the substrate 25. A base 130 is below the support 55, and a compliant member 300 is positioned between the support 55 and the base 130. The compliant member 300 may be adapted to alleviate thermal stresses arising from a thermal expansion mismatch between the dielectric 60 and the base 130.
摘要翻译：用于处理衬底25的室30包括支撑件55，其包括包围电极70的电介质60.电极70可以带电以静电保持衬底25，或者可以对腔室30中的带电气体进行充电以处理衬底基座130在支撑件55下方，并且顺应构件300定位在支撑件55和基座130之间。顺应构件300可以适于减轻由电介质60和电介质60之间的热膨胀失配引起的热应力基地130。

8. 发明授权

US06414834B1 Dielectric covered electrostatic chuck 有权
标题翻译：介质覆盖静电卡盘
公开(公告)号：US06414834B1
公开(公告)日：2002-07-02
申请号：US09596108
申请日：2000-06-16
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.
摘要翻译：用于将衬底55保持在高密度等离子体中的静电卡盘100包括至少部分被半导体电介质115覆盖的电极110，其中半导体电介质115可具有约5×10 9欧姆到约8×10 10欧姆·厘米的电阻。

9. 发明授权

US06280584B1 Compliant bond structure for joining ceramic to metal 失效
标题翻译：用于将陶瓷与金属接合的合适的结合结构
公开(公告)号：US06280584B1
公开(公告)日：2001-08-28
申请号：US09124317
申请日：1998-07-29
申请人： Ananda H. Kumar , Kadthala R. Narendrnath , Shamouil Shamouilian
发明人： Ananda H. Kumar , Kadthala R. Narendrnath , Shamouil Shamouilian
IPC分类号： H02N1300
CPC分类号： H02N13/00
摘要： A compliant bond structure 20 comprising wire mesh 25 strands 50 surrounded by compliant metal 40 is useful for bonding a ceramic surface 30 to a metal surface 35. The wire mesh 25 comprises interlocking strands 50 having longitudinal axes that are oriented substantially parallel to the ceramic and metal surfaces 30, 35. More preferably, the wire mesh 25 comprises strands having a coefficient of thermal expansion that is about 0.4 to about 1.6 times the average of the coefficients of thermal expansion of the metal and ceramic surfaces 30, 35.
摘要翻译：由柔顺金属40包围的金属丝网25股线50的柔性粘合结构20可用于将陶瓷表面30粘合到金属表面35.金属丝网25包括具有基本平行于陶瓷的纵向轴线的互锁股线50，以及金属丝网25更优选地，金属丝网25包括热膨胀系数为金属和陶瓷表面30,35的热膨胀系数的平均值的约0.4至约1.6倍的股线。

10. 发明授权

US06273958B1 Substrate support for plasma processing 有权
公开(公告)号：US06273958B1
公开(公告)日：2001-08-14
申请号：US09329020
申请日：1999-06-09
申请人： Shamouil Shamouilian , Ananda H. Kumar , Siamak Salimian , Mahmoud Dahimene , Michael G. Chafin , Dennis S. Grimard
发明人： Shamouil Shamouilian , Ananda H. Kumar , Siamak Salimian , Mahmoud Dahimene , Michael G. Chafin , Dennis S. Grimard
IPC分类号： C23C1600
摘要： A support 55 comprises a dielectric 60 covering a primary electrode 70, the dielectric 60 having a surface 75 adapted to receive a substrate 25 and a conduit 160 that extends through the dielectric 60. The thickness of a portion of the dielectric 60 between an edge 195 of the primary electrode 70 and a surface 180 of the conduit 160 is sufficiently large to reduce the incidence of plasma formation in the conduit 160 when the primary electrode 70 is charged by an RF voltage to form a plasma of gas in the chamber 30 during processing of the substrate 25.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式