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    • 1. 发明申请
    • CONTROLLER FOR ONE TYPE OF NAND FLASH MEMORY FOR EMULATING ANOTHER TYPE OF NAND FLASH MEMORY
    • 用于模拟其他类型NAND闪存的一种类型的NAND闪存存储器的控制器
    • US20090172247A1
    • 2009-07-02
    • US11964741
    • 2007-12-27
    • SHAHAR BAR-ORAlon MarcuOri SternDan Inbar
    • SHAHAR BAR-ORAlon MarcuOri SternDan Inbar
    • G06F12/02
    • G11C16/10
    • A controller for one type of NAND flash memory device that emulates another type of NAND flash memory device. The controller may include a host NAND interface to receive host data from a NAND host device, and a data aggregator for aggregating the host data with complementary data, to thereby create device data that is storable in a device page of an array of NAND flash memory cells of the NAND flash memory device. After creating the device data the controller writes the device data into a device page of the NAND flash memory cells. The controller also includes a data parser to parse host data from device data when data read operations are executed by the controller. If required, the controller uses the data parser to parse complementary data from device data to create device data when data writing operations are executed by the controller.
    • 一种用于模拟另一类NAND闪存器件的NAND闪存器件的控制器。 控制器可以包括用于从NAND主机设备接收主机数据的主机NAND接口和用于利用补充数据聚集主机数据的数据聚合器,从而创建可存储在N​​AND闪存阵列的设备页面中的设备数据 NAND闪存设备的单元。 创建设备数据后,控制器将设备数据写入NAND闪存单元的设备页面。 当控制器执行数据读取操作时,控制器还包括一个数据解析器,用于从设备数据中解析主机数据。 如果需要,当控制器执行数据写入操作时,控制器使用数据解析器来解析设备数据中的补充数据以创建设备数据。
    • 5. 发明授权
    • Controller for one type of NAND flash memory for emulating another type of NAND flash memory
    • 用于模拟另一种NAND闪存的一种类型的NAND闪存的控制器
    • US08001316B2
    • 2011-08-16
    • US11964741
    • 2007-12-27
    • Shahar Bar-OrAlon MarcuOri SternDan Inbar
    • Shahar Bar-OrAlon MarcuOri SternDan Inbar
    • G06F12/12
    • G11C16/10
    • A controller for one type of NAND flash memory device that emulates another type of NAND flash memory device. The controller may include a host NAND interface to receive host data from a NAND host device, and a data aggregator for aggregating the host data with complementary data, to thereby create device data that is storable in a device page of an array of NAND flash memory cells of the NAND flash memory device. After creating the device data the controller writes the device data into a device page of the NAND flash memory cells. The controller also includes a data parser to parse host data from device data when data read operations are executed by the controller. If required, the controller uses the data parser to parse complementary data from device data to create device data when data writing operations are executed by the controller.
    • 一种用于模拟另一类NAND闪存器件的NAND闪存器件的控制器。 控制器可以包括用于从NAND主机设备接收主机数据的主机NAND接口和用于利用补充数据聚集主机数据的数据聚合器,从而创建可存储在N​​AND闪存阵列的设备页面中的设备数据 NAND闪存设备的单元。 创建设备数据后,控制器将设备数据写入NAND闪存单元的设备页面。 当控制器执行数据读取操作时,控制器还包括一个数据解析器,用于从设备数据中解析主机数据。 如果需要,当控制器执行数据写入操作时,控制器使用数据解析器来解析设备数据中的补充数据以创建设备数据。
    • 7. 发明授权
    • Preloading data into a flash storage device
    • 将数据预加载到闪存设备中
    • US08743629B2
    • 2014-06-03
    • US13123945
    • 2009-10-05
    • Shahar Bar-OrDan InbarOri Moshe SternYigal Eli
    • Shahar Bar-OrDan InbarOri Moshe SternYigal Eli
    • G11C7/22
    • G11C16/14G11C11/5628G11C16/102G11C2211/5641
    • Programmer's data that is transferred from a programming device (160) to a storage device (100) is initially stored in a memory device (120) of the storage device (100) by using a durable data-retention storage setup (210). After the storage device is embedded in a host device (170), the programmer's data is internally (i.e., in the storage device) read from the memory device and rewritten into the memory device by using a conventional storage setup (220). Using a durable data-retention storage setup may include temporarily (i.e., before the storage device is embedded in a host) operating selected memory cells (124) of the memory device as conventional single-bit per cell (SBC) cells or as unconventional multi-bit per cell (MBC) cells. After the storage device (100) is embedded in a host device (170), the programmer's data, or selected parts thereof, is read from the memory device (120) and rewritten into it by operating selected memory cells (126, 128) of the memory device as conventional MBC cells.
    • 通过使用持久数据保持存储设置(210),将从编程设备(160)传送到存储设备(100)的程序员数据初始地存储在存储设备(100)的存储设备(120)中。 在将存储设备嵌入在主机设备(170)中之后,程序员的数据在内部(即,在存储设备中)从存储器设备读取并通过使用传统的存储设置(220)重写到存储设备中。 使用持久的数据保留存储设置可以临时地(即,在存储设备被嵌入主机之前)将存储器设备的选定的存储器单元(124)作为传统的单比特单元(SBC)单元或者作为非常规多 (MBC)细胞。 在存储设备(100)被嵌入在主机设备(170)中之后,通过操作选择的存储器单元(126,128),从存储器设备(120)读取编程器数据或其选择的部分,并将其重新写入 存储器件作为常规MBC单元。
    • 8. 发明申请
    • PRELOADING DATA INTO A FLASH STORAGE DEVICE
    • 将数据导入闪存存储设备
    • US20110199823A1
    • 2011-08-18
    • US13123945
    • 2009-10-05
    • Shahar Bar-orDan InbarOri Moshe SternYigal Eli
    • Shahar Bar-orDan InbarOri Moshe SternYigal Eli
    • G11C16/10G11C16/04
    • G11C16/14G11C11/5628G11C16/102G11C2211/5641
    • Programmer's data that is transferred from a programming device (160) to a storage device (100) is initially stored in a memory device (120) of the storage device (100) by using a durable data-retention storage setup (210). After the storage device is embedded in a host device (170), the programmer's data is internally (i.e., in the storage device) read from the memory device and rewritten into the memory device by using a conventional storage setup (220). Using a durable data-retention storage setup may include temporarily (i.e., before the storage device is embedded in a host) operating selected memory cells (124) of the memory device as conventional single-bit per cell (SBC) cells or as unconventional multi-bit per cell (MBC) cells. After the storage device (100) is embedded in a host device (170), the programmer's data, or selected parts thereof, is read from the memory device (120) and rewritten into it by operating selected memory cells (126, 128) of the memory device as conventional MBC cells.
    • 通过使用持久数据保持存储设置(210),将从编程设备(160)传送到存储设备(100)的程序员数据初始地存储在存储设备(100)的存储设备(120)中。 在将存储设备嵌入在主机设备(170)中之后,程序员的数据在内部(即,在存储设备中)从存储器设备读取并通过使用传统的存储设置(220)重写到存储设备中。 使用持久的数据保留存储设置可以临时地(即,在存储设备被嵌入主机之前)将存储器设备的选定的存储器单元(124)作为传统的单比特单元(SBC)单元或者作为非常规多 (MBC)细胞。 在存储设备(100)被嵌入在主机设备(170)中之后,通过操作选择的存储器单元(126,128),从存储器设备(120)读取编程器数据或其选择的部分,并将其重新写入 存储器件作为常规MBC单元。