专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5656888A Oxygen-doped thiogallate phosphor 失效
标题翻译：氧掺杂的硫代镓酸盐荧光体
公开(公告)号：US5656888A
公开(公告)日：1997-08-12
申请号：US555644
申请日：1995-11-13
申请人： Sey-Shing Sun , Eric R. Dickey , Richard T. Tuenge , Randall Wentross
发明人： Sey-Shing Sun , Eric R. Dickey , Richard T. Tuenge , Randall Wentross
IPC分类号： C09K11/66 , C09K11/77 , H05B33/14
CPC分类号： H05B33/14 , C09K11/663 , C09K11/7703 , C09K11/7718 , C09K11/7731
摘要： A novel thin-film electroluminescent (TFEL) structure for emitting light in response to the application of an electric field is disclosed. The TFEL structure includes first and second electrode layers sandwiching a TFEL stack, the stack including first and second insulator layers and a phosphor layer that includes an alkaline earth thiogallate doped with oxygen.
摘要翻译：公开了一种用于响应于电场的应用而发光的新型薄膜电致发光（TFEL）结构。 TFEL结构包括夹着TFEL堆叠的第一和第二电极层，所述堆叠包括第一和第二绝缘体层以及包含掺杂有氧的碱土金属硫氰酸盐的荧光体层。

2. 发明授权

US5581150A TFEL device with injection layer 失效
标题翻译：带注射层的TFEL装置
公开(公告)号：US5581150A
公开(公告)日：1996-12-03
申请号：US542520
申请日：1995-10-13
申请人： Philip D. Rack , Paul H. Holloway , Sey-Shing Sun , Eric R. Dickey , Christian F. Schaus , Richard T. Tuenge , Christopher N. King
发明人： Philip D. Rack , Paul H. Holloway , Sey-Shing Sun , Eric R. Dickey , Christian F. Schaus , Richard T. Tuenge , Christopher N. King
IPC分类号： C09K11/62 , H05B33/10 , H05B33/12 , H05B33/14 , H01J1/62 , H01J63/04
CPC分类号： C09K11/625 , H05B33/10 , H05B33/12 , H05B33/14 , Y10S428/917
摘要： A TFEL structure is disclosed that includes first and second electrode layers sandwiching a TFEL stack including at least one insulator layer and a novel three layer laminate structure. The three-layer laminate structure includes an alkaline earth thiogallate phosphor layer, a nucleating layer and an injection layer. The nucleating layer lies between the phosphor layer and the injection layer. The injection layer provides a charge injection function through the nucleating layer for the thiogallate phosphor layer which is of high crystallinity at its interface with the nucleating layer. A preferred injection layer includes indium, for example as the metal or as indium tin oxide. The best material for the nucleating layer is zinc sulfide.
摘要翻译：公开了一种TFEL结构，其包括夹持包括至少一个绝缘体层和新颖的三层层压结构的TFEL堆叠的第一和第二电极层。三层层叠结构包括碱土金属硫族镓酸盐荧光体层，成核层和注入层。成核层位于荧光体层和注入层之间。注入层通过用于硫代镓荧光体层的成核层提供电荷注入功能，其在与成核层的界面处具有高结晶度。优选的注入层包括铟，例如作为金属或氧化铟锡。成核层最好的材料是硫化锌。

3. 发明授权

US5598059A AC TFEL device having a white light emitting multilayer phosphor 失效
标题翻译： AC TFEL装置具有白色发光多层荧光体
公开(公告)号：US5598059A
公开(公告)日：1997-01-28
申请号：US424222
申请日：1995-04-19
申请人： Sey-Shing Sun , Richard T. Tuenge
发明人： Sey-Shing Sun , Richard T. Tuenge
IPC分类号： C09K11/57 , C09K11/77 , H05B33/10 , H05B33/14 , H01J1/62 , H01J63/04
CPC分类号： C09K11/574 , C09K11/7718 , H05B33/10 , H05B33/14 , Y02B20/181
摘要： An AC thin film electroluminescent (TFEL) device includes a multilayer phosphor for emitting white light having improved emission intensity in the blue region of the spectrum. The multilayer stack consists of an inverted structure thin film stack having a red light emitting manganese doped zinc sulfide (ZnS:Mn) layer disposed on a first insulating layer; a blue-green light emitting cerium doped strontium sulfide (SrS:Ce) layer disposed on the red light emitting layer; and a blue light emitting cerium activated thiogallate phosphor (Sr.sub.x Ca.sub.1-x Ga.sub.2 S.sub.4 :Ce) layer disposed on the blue-green light emitting layer. The manganese doped zinc sulfide layer acts as a nucleating layer that lowers the threshold voltage, and the cerium activated thiogallate phosphor layer provides a moisture barrier for the hydroscopic cerium doped strontium sulfide layer. The white light from the multilayer phosphor can be appropriately filtered to produce any desired color.
摘要翻译： AC薄膜电致发光（TFEL）装置包括用于发射在光谱的蓝色区域中具有改进的发射强度的白光的多层荧光体。多层叠层由在第一绝缘层上设置有红色发光锰掺杂硫化锌（ZnS：Mn）层的倒置结构薄膜叠层构成; 设置在红色发光层上的蓝绿色发光铈掺杂硫化锶（SrS：Ce）层; 和蓝色发光铈激活的硫代镓酸盐荧光体（SrxCa1-xGa2S4：Ce）层，设置在蓝绿色发光层上。锰掺杂的硫化锌层用作降低阈值电压的成核层，并且铈活化的硫代镓酸盐荧光体层为吸湿铈掺杂的硫化锶层提供了水分阻挡层。来自多层荧光体的白色光可以被适当地过滤以产生任何期望的颜色。

4. 发明授权

US5505986A Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices 失效
标题翻译：用于AC TFEL器件制备蓝色发光磷光体层的多源反应沉积工艺
公开(公告)号：US5505986A
公开(公告)日：1996-04-09
申请号：US195999
申请日：1994-02-14
申请人： Karl-Otto Velthaus , Reiner H. Mauch , T. Achim Oberacker , Hans-Werner Schock , Sey-Shing Sun , Randall C. Wentross , Richard T. Tuenge
发明人： Karl-Otto Velthaus , Reiner H. Mauch , T. Achim Oberacker , Hans-Werner Schock , Sey-Shing Sun , Randall C. Wentross , Richard T. Tuenge
IPC分类号： C09K11/77 , C09K11/88 , C23C14/06 , C23C14/24 , C23C14/54 , H01L21/363 , H05B33/10 , B05D5/06
CPC分类号： C23C14/24 , C09K11/7718 , C09K11/7731 , C09K11/886 , C23C14/0623 , C23C14/541 , H05B33/10
摘要： A multi-source reactive deposition process for preparing a phosphor layer for an AC TFEL device having the chemical formula M.sup.II M.sup.III.sub.2 X.sub.4 :RE, where M.sup.II is a group II metal taken from the group magnesium, calcium, strontium and barium, M.sup.III is a group III metal taken from the group aluminum, gallium and indium, X is taken from the group sulfur and selenium, and RE comprises a rare earth activator dopant taken from the group cerium and europium is disclosed. The phosphor film is formed in crystalline form on a substrate heated to a temperature between 400.degree. and 800.degree. C. by depositing more than one deposition source chemical where at least one of the deposition source chemicals of the group II metal or the group III metal is a compound.
摘要翻译：用于制备具有化学式MIIMIII2X4：RE的AC TFEL器件的荧光体层的多源反应沉积方法，其中MII是从镁，钙，锶和钡组中获得的II族金属，MIII是III族金属取自铝，镓和铟组，X取自硫和硒组，RE包含从铈组取的稀土活化剂掺杂剂，并且公开了铕。荧光体膜通过沉积多于一种的沉积源化学品而形成在加热到400-800℃温度的基板上，其中至少一种第二族金属或III族金属的沉积源化学物质是一种化合物。

5. 发明授权

US5309070A AC TFEL device having blue light emitting thiogallate phosphor 失效
标题翻译：具有蓝色发光硫代镓酸盐荧光体的AC TFEL装置
公开(公告)号：US5309070A
公开(公告)日：1994-05-03
申请号：US668201
申请日：1991-03-12
申请人： Sey-Shing Sun , Richard T. Tuenge , James Kane , Christopher N. King , P. Niel Yocom
发明人： Sey-Shing Sun , Richard T. Tuenge , James Kane , Christopher N. King , P. Niel Yocom
IPC分类号： C09K11/00 , C09K11/62 , C09K11/77 , H05B33/12 , H05B33/14 , H05B33/18 , H05B33/22 , H01J1/63
CPC分类号： H05B33/14 , C09K11/7718 , H05B33/18 , H05B33/22
摘要： An AC TFEL device includes a front electrode set deposited on a transparent substrate and a rear electrode set, the electrode sets enclosing a thin film laminate which includes a pair of insulating layers sandwiching an alkaline earth thiogallate thin film phosphor doped with a rare earth activator. The thiogallate phosphor layer is capable of producing blue light of sufficient intensity to create a full color TFEL panel.
摘要翻译： AC TFEL装置包括沉积在透明基板上的前电极组和后电极组，所述电极组包围薄膜层叠体，所述薄膜层叠体包括一对绝缘层，所述绝缘层夹着掺杂有稀土活化剂的碱土金属硫代镓酸盐薄膜磷光体。硫代镓酸盐荧光体层能够产生足够强度的蓝光以产生全色TFEL面板。

6. 发明授权

US09231204B2 Low voltage embedded memory having conductive oxide and electrode stacks 有权
标题翻译：具有导电氧化物和电极堆叠的低电压嵌入式存储器
公开(公告)号：US09231204B2
公开(公告)日：2016-01-05
申请号：US13630795
申请日：2012-09-28
申请人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
发明人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
IPC分类号： G11C11/00 , H01L45/00 , G11C13/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Embodiments include low voltage embedded memory having conductive oxide and electrode stacks. A material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
摘要翻译：实施例包括具有导电氧化物和电极堆叠的低电压嵌入式存储器。用于存储元件的材料层堆叠包括第一导电电极。导电氧化物层设置在第一导电电极上。导电氧化物层中具有多个氧空位。第二电极设置在导电氧化物层上。

7. 发明申请

US20140092666A1 LOW VOLTAGE EMBEDDED MEMORY HAVING CONDUCTIVE OXIDE AND ELECTRODE STACKS 有权
标题翻译：具有导电氧化物和电极堆叠的低电压嵌入式存储器
公开(公告)号：US20140092666A1
公开(公告)日：2014-04-03
申请号：US13630795
申请日：2012-09-28
申请人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
发明人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
摘要翻译：描述具有导电氧化物和电极堆叠的低电压嵌入式存储器。例如，用于存储元件的材料层堆叠包括第一导电电极。导电氧化物层设置在第一导电电极上。导电氧化物层中具有多个氧空位。第二电极设置在导电氧化物层上。

8. 发明授权

US09647208B2 Low voltage embedded memory having conductive oxide and electrode stacks 有权
公开(公告)号：US09647208B2
公开(公告)日：2017-05-09
申请号：US14950784
申请日：2015-11-24
申请人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
发明人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
IPC分类号： G11C11/00 , H01L45/00 , G11C13/00 , H01L27/24
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.

9. 发明申请

US20160079523A1 LOW VOLTAGE EMBEDDED MEMORY HAVING CONDUCTIVE OXIDE AND ELECTRODE STACKS 审中-公开
标题翻译：具有导电氧化物和电极堆叠的低电压嵌入式存储器
公开(公告)号：US20160079523A1
公开(公告)日：2016-03-17
申请号：US14950784
申请日：2015-11-24
申请人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
发明人： Elijah V. Karpov , Brian S. Doyle , Charles C. Kuo , Robert S. Chau , Eric R. Dickey , Michael Stephen Bowen , Sey-Shing Sun
IPC分类号： H01L45/00 , H01L27/24 , G11C13/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
摘要翻译：描述具有导电氧化物和电极堆叠的低电压嵌入式存储器。例如，用于存储元件的材料层堆叠包括第一导电电极。导电氧化物层设置在第一导电电极上。导电氧化物层中具有多个氧空位。第二电极设置在导电氧化物层上。

10. 发明授权

US07405116B2 Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow 有权
标题翻译：门边缘衬垫的应用以保持栅极长度CD在替代栅极晶体管流中
公开(公告)号：US07405116B2
公开(公告)日：2008-07-29
申请号：US10916322
申请日：2004-08-11
申请人： Richard J. Carter , Wai Lo , Sey-Shing Sun , Hong Lin , Verne Hornback
发明人： Richard J. Carter , Wai Lo , Sey-Shing Sun , Hong Lin , Verne Hornback
IPC分类号： H01L21/338
CPC分类号： H01L29/6656 , H01L21/823828 , H01L29/66545 , H01L29/6659 , H01L29/7833
摘要： A method to maintain a well-defined gate stack profile, deposit or grow a uniform gate dielectric, and maintain gate length CD control by means of an inert insulating liner deposited after dummy gate etch and before the spacer process. The liner material is selective to wet chemicals used to remove the dummy gate oxide thereby preventing undercut in the spacer region. The method is aimed at making the metal gate electrode technology a feasible technology with maximum compatibility with the existing fabrication environment for multiple generations of CMOS transistors, including those belonging to the 65 nm, 45 nm and 25 nm technology nodes, that are being used in analog, digital or mixed signal integrated circuit for various applications such as communication, entertainment, education and security products.
摘要翻译：保持良好限定的栅极堆叠轮廓的方法，沉积或生长均匀的栅极电介质，并且通过在虚拟栅极蚀刻之后和间隔物工艺之前沉积的惰性绝缘衬垫来维持栅极长度CD控制。衬垫材料对用于去除伪栅极氧化物的湿化学品是选择性的，从而防止间隔区域中的底切。该方法旨在使金属栅极电极技术成为与现有制造环境兼容的可行技术，用于多代CMOS晶体管，包括属于65nm，45nm和25nm技术节点的CMOS晶体管，这些晶体管正在用于模拟，数字或混合信号集成电路，用于通信，娱乐，教育和安全产品等各种应用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式