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    • 7. 发明授权
    • Image sensor having optical waveguide structure and method for manufacturing the same
    • 具有光波导结构的图像传感器及其制造方法
    • US08119436B2
    • 2012-02-21
    • US12608496
    • 2009-10-29
    • Seung Ryong Park
    • Seung Ryong Park
    • H01L31/0232
    • H01L27/14636H01L27/14605
    • An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a semiconductor substrate that includes photodiodes arranged for each unit pixel; an interlayer dielectric layer and metal wirings disposed on the semiconductor substrate; and a photorefractive unit that is formed on the periphery of an optical path incident on the photodiodes. The photorefractive unit has a lower refractive index than the interlayer dielectric layer. The slantly incident light can be incident on the photodiodes, while maintaining the slanted optical path as it is. The light sensitivity of the photodiodes can be improved, thereby improving image quality.
    • 公开了一种图像传感器及其制造方法。 图像传感器可以包括半导体衬底,其包括为每个单位像素布置的光电二极管; 设置在半导体衬底上的层间绝缘层和金属布线; 以及形成在入射到光电二极管上的光路周边的光折射单元。 光折射单元具有比层间电介质层低的折射率。 倾斜的入射光可以入射到光电二极管上,同时保持倾斜的光路。 可以提高光电二极管的光灵敏度,从而提高图像质量。