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1. 发明授权

US5262199A Coating porous materials with metal oxides and other ceramics by MOCVD 失效
标题翻译：通过MOCVD涂覆金属氧化物和其他陶瓷的多孔材料
公开(公告)号：US5262199A
公开(公告)日：1993-11-16
申请号：US870570
申请日：1992-04-17
申请人： Seshu Desu , Chien-Hsiung Peng , Tian Shi
发明人： Seshu Desu , Chien-Hsiung Peng , Tian Shi
IPC分类号： B01J37/02 , B01J37/08 , C04B41/45 , C04B41/50 , C04B41/81 , C04B41/87 , C23C16/04 , C23C16/40 , C23C16/00 , B05D5/00
CPC分类号： C04B41/009 , B01J37/0215 , B01J37/0238 , B01J37/086 , C04B41/4554 , C04B41/5041 , C04B41/81 , C04B41/87 , C23C16/045 , C23C16/40 , C04B2111/00793 , C04B2111/0081
摘要： Metal organic chemical vapor deposition (MOCVD) is used to form a layer of a metal oxide on the surfaces and within the pores of a porous ceramic material. The metal oxide is formed from one or more inexpensive metal organic precursors which permeate the pores of the substrate as a vapor. Surface reactions on the heated substrate convert the metal organic precursors to their metal oxide. The technique has particular utility in creating catalysts with very large surface areas and in providing a protective coating on ceramic materials that prevents or reduces damage from hostile environments. In a preferred embodiment, aluminum isopropoxide, [(CH.sub.3).sub.2 CHO].sub.3 Al, and titanium ethoxide, Ti(C.sub.2 H.sub.5 O).sub.4, are used simultaneously or successively as precursors to generate a Al.sub.2 TiO.sub.5 coating on a porous ceramic substrate such as SiC or porous refractory cement candle filters.
摘要翻译：金属有机化学气相沉积（MOCVD）用于在多孔陶瓷材料的表面和孔内形成一层金属氧化物。金属氧化物由一种或多种便宜的金属有机前体形成，其以蒸气的形式渗透到基底的孔中。在加热的底物上的表面反应将金属有机前体转化成它们的金属氧化物。该技术在产生具有非常大的表面积的催化剂和在陶瓷材料上提供防护或减少恶劣环境的损伤的保护涂层方面具有特别的用途。在优选的实施方案中，异丙氧基铝，[（CH 3）2 CHO] 3 Al和乙醇钛，Ti（C 2 H 5 O）4同时或相继地用作前体，以在多孔陶瓷基底如SiC或多孔耐火材料上产生Al 2 TiO 5涂层水泥蜡烛过滤器

2. 发明授权

US5593727A Production of films of SiO.sub.2 by chemical vapor deposition 失效
标题翻译：通过化学气相沉积生产SiO2膜
公开(公告)号：US5593727A
公开(公告)日：1997-01-14
申请号：US148391
申请日：1993-11-08
申请人： Seshu B. Desu , Chien-Hsiung Peng , Tian Shi , Pradyot A. Agaskar
发明人： Seshu B. Desu , Chien-Hsiung Peng , Tian Shi , Pradyot A. Agaskar
IPC分类号： C01B33/00 , C08G77/12 , C23C16/00
CPC分类号： C08G77/12 , C01B33/00
摘要： The chemical vapor deposition of hydridospherosiloxane to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. The chemical vapor deposition process synthesized compounds with the general formula,(HSiO.sub.3/2).sub.n,with n being an even number ranging from 8 to a very large number. More particularly, it relates to the vapor deposition of oligomeric hydrogensilsesquioxanes, henceforth referred to as hydridospherosiloxanes. The hydridospherosiloxanes are used directly in a chemical vapor deposition reactor to generate films of SiO.sub.2 at low temperatures on substrates that cannot withstand high temperatures. Hydridospherosiloxanes and soluble hydrogensilsesquioxane resin are produced having the formula(HSiO.sub.3/2).sub.n,where n is an even integer greater than 8.
摘要翻译：化学气相沉积氢化间苯二甲硅氧烷以在不能承受高温的基材上在低温下产生SiO 2膜。化学气相沉积工艺合成具有通式（HSiO3 / 2）n的化合物，其中n为8至非常大的偶数。更具体地说，本发明涉及低聚氢倍半硅氧烷的气相沉积，此后称为氢化间苯二甲硅氧烷。氢化间苯二甲硅氧烷直接用于化学气相沉积反应器，以在低温下在不能承受高温的基材上产生SiO 2膜。产生具有式（HSiO3 / 2）n的氢化间苯二酚硅烷和可溶性倍半硅氧烷树脂，其中n是大于8的偶数整数。

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