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    • 4. 发明授权
    • Semiconductor material for radiation absorption and detection
    • 用于辐射吸收和检测的半导体材料
    • US08178008B2
    • 2012-05-15
    • US12211894
    • 2008-09-17
    • Brent Allen ClothierAdrian IvanDaniel Bruno McDevitt
    • Brent Allen ClothierAdrian IvanDaniel Bruno McDevitt
    • H01M4/88
    • G01T3/00H01L31/032H01L31/036
    • A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M12+, M22+, M32+, . . . )(G1V, G2V, G3V, . . . ) and exhibiting an antifluorite-type order, where Li=1, (M12++M22++M32++ . . . )=1, and (G1V+G2V+G3V+ . . . )=1. The material provides two useful characteristics: [1] a high Li-site density, which when enriched in 6Li, produces exceptional neutron-absorbing capabilities and [2] a semiconducting band-gap for the efficient conversion of absorbed photon and neutron energies into electrical currents. These characteristics can be exploited in applications for power generation or the spectroscopic detection of gamma and neutron radiation. The material can be tailored so as to detect only gamma photons, detect only neutron particles, or simultaneously detect gamma photons and neutron particles.
    • 一种用于辐射吸收和检测的半导体材料,其包含Li(M12 +,M22 +,M32 +,...)(G1V,G2V,G3V,...)的化学计量组成,并显示出耐氟石型次序,其中Li = 1, M12 ++ M22 ++ M32 ++ ...)= 1,(G1V + G2V + G3V + ...)= 1。 该材料提供了两个有用的特征:[1]高Li位密度,当富集6Li时,产生特殊的中子吸收能力和[2]半导体带隙,用于有效地将吸收的光子和中子能转化为电 电流。 这些特性可用于发电或伽马和中子辐射的光谱检测应用。 可以调整材料,以便仅检测伽马光子,仅检测中子粒子,或同时检测伽马光子和中子粒子。
    • 9. 发明授权
    • Time-of-flight capable high resolution pet detector
    • 飞行时间能力高分辨率宠物探测器
    • US07193208B1
    • 2007-03-20
    • US11257207
    • 2005-10-24
    • Kent BurrAdrian IvanJames Leblanc
    • Kent BurrAdrian IvanJames Leblanc
    • G01T1/20
    • G01T1/1642G01T1/2985
    • An array of position-sensitive avalanche photodiodes is provided in which output signal contacts from corners of each photodiode are grouped in common for readout. Each photodiode may be provided on a single wafer or chip, with photodiodes being separated by a trench or a groove. Corners of each photodiode include contacts for reading out signals resulting from gamma rays incident events in an adjacent scintillator. Grouping of the contacts into common output channels reduces the number of output channels, while still permitting localization of gamma ray incident events in the scintillator crystals. The photodiode array may be positioned adjacent to one face of a scintillator, with a photomultiplier tube to be positioned adjacent to another. The detector arrangement may be used for positron emission tomography imaging and similar techniques.
    • 提供了一组位置敏感的雪崩光电二极管,其中从每个光电二极管的角落的输出信号接触被共同分组以用于读出。 每个光电二极管可以设置在单个晶片或芯片上,其中光电二极管被沟槽或沟槽分开。 每个光电二极管的角度包括用于读出由相邻闪烁器中的伽马射线入射事件产生的信号的触点。 将触点分组成公共输出通道减少输出通道的数量,同时仍然允许在闪烁体晶体中定位伽马射线入射事件。 光电二极管阵列可以定位成与闪烁体的一个面相邻,光电倍增管被定位成与另一个相邻。 检测器装置可用于正电子发射断层摄影和类似技术。