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    • 5. 发明申请
    • GLOBAL SHUTTER PIXEL WITH IMPROVED EFFICIENCY
    • 全球快门像素提高效率
    • US20120273854A1
    • 2012-11-01
    • US13173596
    • 2011-06-30
    • Sergey VelichkoJingyi Bai
    • Sergey VelichkoJingyi Bai
    • H01L31/113H01L21/265
    • H01L27/1461H01L21/26586H01L27/14612H01L27/14623
    • A global shutter pixel cell includes a serially connected anti-blooming (AB) transistor, storage gate (SG) transistor and transfer (TX) transistor. The serially connected transistors are coupled between a voltage supply and a floating diffusion (FD) region. A terminal of a photodiode (PD) is connected between respective terminals of the AB and the SG transistors; and a terminal of a storage node (SN) diode is connected between respective terminals of the SG and the TX transistors. A portion of the PD region is extended under the SN region, so that the PD region shields the SN region from stray photons. Furthermore, a metallic layer, disposed above the SN region, is extended downwardly toward the SN region, so that the metallic layer shields the SN region from stray photons. Moreover, a top surface of the metallic layer is coated with an anti-reflective layer.
    • 全局快门像素单元包括串联连接的防晕(AB)晶体管,存储栅极(SG)晶体管和传输(TX)晶体管。 串联连接的晶体管耦合在电压源和浮动扩散(FD)区域之间。 光电二极管(PD)的端子连接在AB和SG晶体管的各个端子之间; 并且存储节点(SN)二极管的端子连接在SG和TX晶体管的各个端子之间。 PD区域的一部分在SN区域下延伸,使得PD区域将SN区域与杂散光子屏蔽。 此外,设置在SN区域上方的金属层向下延伸到SN区域,使得金属层将SN区域与杂散光子屏蔽。 此外,金属层的顶表面涂覆有抗反射层。
    • 9. 发明授权
    • Global shutter pixel with improved efficiency
    • 全球快门像素效率提高
    • US08878264B2
    • 2014-11-04
    • US13173596
    • 2011-06-30
    • Sergey VelichkoJingyi Bai
    • Sergey VelichkoJingyi Bai
    • H01L27/146H01L21/265
    • H01L27/1461H01L21/26586H01L27/14612H01L27/14623
    • A global shutter pixel cell includes a serially connected anti-blooming (AB) transistor, storage gate (SG) transistor and transfer (TX) transistor. The serially connected transistors are coupled between a voltage supply and a floating diffusion (FD) region. A terminal of a photodiode (PD) is connected between respective terminals of the AB and the SG transistors; and a terminal of a storage node (SN) diode is connected between respective terminals of the SG and the TX transistors. A portion of the PD region is extended under the SN region, so that the PD region shields the SN region from stray photons. Furthermore, a metallic layer, disposed above the SN region, is extended downwardly toward the SN region, so that the metallic layer shields the SN region from stray photons. Moreover, a top surface of the metallic layer is coated with an anti-reflective layer.
    • 全局快门像素单元包括串联连接的防晕(AB)晶体管,存储栅极(SG)晶体管和传输(TX)晶体管。 串联连接的晶体管耦合在电压源和浮动扩散(FD)区域之间。 光电二极管(PD)的端子连接在AB和SG晶体管的各个端子之间; 并且存储节点(SN)二极管的端子连接在SG和TX晶体管的各个端子之间。 PD区域的一部分在SN区域下延伸,使得PD区域将SN区域与杂散光子屏蔽。 此外,设置在SN区域上方的金属层向下延伸到SN区域,使得金属层将SN区域与杂散光子屏蔽。 此外,金属层的顶表面涂覆有抗反射层。