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1. 发明申请

US20160197243A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管芯片及其制造方法
公开(公告)号：US20160197243A1
公开(公告)日：2016-07-07
申请号：US15069260
申请日：2016-03-14
申请人： Seoul Viosys Co., Ltd.
发明人： Sum Geun LEE , Sang Ki JIN , Jin Cheol SHIN , Jong Kyu KIM , So Ra LEE , Chung Hoon LEE
IPC分类号： H01L33/46 , H01L33/62 , H01L33/00
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.
摘要翻译：一种包括封装体和引线的发光二极管封装，所述封装体包括安装表面，设置在所述安装表面上的发光结构，所述发光结构包括设置在第一导电型半导体层和第二导电型半导体层，设置在发光结构上的荧光体层和布置在发光结构和安装表面之间的分布式布拉格反射器。分布式布拉格反射器包括第一分布式布拉格反射器和第二分布布拉格反射器，并且第一分布式布拉格反射器内的材料层的光学厚度大于第二分布布拉格反射器内材料层的光学厚度。

2. 发明申请

US20170236865A1 LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING UNITS 审中-公开
公开(公告)号：US20170236865A1
公开(公告)日：2017-08-17
申请号：US15499813
申请日：2017-04-27
申请人： Seoul Viosys Co., Ltd.
发明人： Jae Kwon KIM , Yeo Jin YOON , Jong Kyu KIM , So Ra LEE , Sum Geun LEE , Hyun Haeng LEE
IPC分类号： H01L27/15 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L27/153 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
摘要： A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.

3. 发明申请

US20170148845A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20170148845A1
公开(公告)日：2017-05-25
申请号：US15401599
申请日：2017-01-09
申请人： Seoul Viosys Co., Ltd.
发明人： Sum Geun LEE , Sang Ki JIN , Jin Cheol SHIN , Jong Kyu KIM , So Ra LEE , Chung Hoon LEE
IPC分类号： H01L27/15 , H01L33/50 , H01L33/60 , H01L33/32 , H01L33/22 , H01L33/00 , H01L33/06 , H01L33/62 , H01L33/42
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.

4. 发明申请

US20150207039A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管芯片及其制造方法
公开(公告)号：US20150207039A1
公开(公告)日：2015-07-23
申请号：US14606863
申请日：2015-01-27
申请人： Seoul Viosys Co., Ltd.
发明人： Sum Geun LEE , Sang Ki JIN , Jin Cheol SHIN , Jong Kyu KIM , So Ra LEE , Chung Hoon LEE
IPC分类号： H01L33/46 , H01L33/50 , H01L27/15 , H01L33/22 , H01L33/60
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.
摘要翻译：一种发光二极管芯片，被配置为发射第一波长范围的光和包括基板的第二波长范围的光，设置在所述基板的第一表面上的发光结构，所述发光结构包括有源层设置在第一导电类型半导体层和第二导电类型半导体层之间并被配置为发射第一波长范围的光，以及布置在基板的第二表面上的第一和第二分布布拉格反射器（DBR）。第一DBR被设置为比第二DBR更靠近基板，第一波长范围包括蓝色波长范围，第一DBR包括对于第二波长范围的光比第一波长范围的光更高的反射率，对于第一波长范围的光，DBR包括比对于第二波长范围的光更高的反射率。

5. 发明申请

US20150194573A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管芯片及其制造方法
公开(公告)号：US20150194573A1
公开(公告)日：2015-07-09
申请号：US14590493
申请日：2015-01-06
申请人： Seoul Viosys Co., Ltd.
发明人： Sum Geun LEE , Sang Ki JIN , Jin Cheol SHIN , Jong Kyu KIM , So Ra LEE , Chung Hoon LEE
IPC分类号： H01L33/46 , H01L33/22
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.
摘要翻译：一种发光二极管芯片，包括基板，布置在基板上的发光结构，所述发光结构包括布置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，以及分布布拉格反射器反射从发光结构发出的光。分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率，布喇格反射器对于400至700nm的全波长范围内的光具有至少90％的反射率。

6. 发明申请

US20170012173A1 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：US20170012173A1
公开(公告)日：2017-01-12
申请号：US15273265
申请日：2016-09-22
申请人： Seoul Viosys Co., Ltd.
发明人： Sum Geun LEE , Jin Cheol SHIN , Yeo Jin YOON , Kyoung Wan KIM , Jeong Hee YANG
IPC分类号： H01L33/38 , H01L27/15 , H01L33/62 , H01L33/08
CPC分类号： H01L33/387 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.
摘要翻译：发光二极管包括衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层半导体层，电连接到第一导电类型半导体层的第一电极焊盘，电连接到第二导电类型半导体层的第二电极焊盘，以及设置在第二电极焊盘下方的绝缘层。绝缘层与第一导电类型半导体层和第二导电类型半导体层重叠。绝缘层与第一导电类型半导体层的边缘齐平，第二电极焊盘与第一导电类型半导体层的边缘间隔开。

7. 发明申请

US20160172537A1 LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING UNITS 审中-公开
标题翻译：具有多个发光单元的发光二极管
公开(公告)号：US20160172537A1
公开(公告)日：2016-06-16
申请号：US15003928
申请日：2016-01-22
申请人： Seoul Viosys Co., Ltd.
发明人： Jae Kwon KIM , Yeo Jin YOON , Jong Kyu KIM , So Ra LEE , Sum Geun LEE , Hyun Haeng LEE
IPC分类号： H01L33/22 , H01L33/62 , H01L33/32 , H01L33/42 , H01L27/15 , H01L33/06
CPC分类号： H01L27/153 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/62
摘要： A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.
摘要翻译：发光二极管包括：基板，具有凹凸图案，凹部和凸部;布置在基板上的第一发光单元，设置在基板上的第二发光单元，将第一发光单元连接到凹凸图案上的第二发光单元，以及设置在凹凸图案和线之间的绝缘层。绝缘层具有与凹凸图案对应的形状。

8. 发明申请

US20140103388A1 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
标题翻译：具有电极垫的发光二极管
公开(公告)号：US20140103388A1
公开(公告)日：2014-04-17
申请号：US14140950
申请日：2013-12-26
申请人： SEOUL VIOSYS CO., LTD.
发明人： Sum Geun LEE , Jin Cheol Shin , Yeo Jin Yoon
IPC分类号： H01L33/62
CPC分类号： H01L33/387 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting diode according to an exemplary embodiment of the present invention includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells comprises a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells comprises a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.
摘要翻译：根据本发明的示例性实施例的发光二极管包括至少两个设置在基板上并彼此间隔开的发光单元，其中至少两个发光单元中的每一个包括第一导电类型半导体层，有源层和第二导电型半导体层。所述至少两个发光单元中的每一个包括设置在所述第一导电类型半导体层上的阴极，设置在所述第二导电类型半导体层上的阳极和所述至少两个发光的第一发光单元的阴极电池通过互连部分串联连接到与第一发光单元相邻的至少两个发光单元的第二发光单元的阳极。

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