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1. 发明申请

US20140091338A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20140091338A1
公开(公告)日：2014-04-03
申请号：US14099423
申请日：2013-12-06
申请人： Seoul Opto Device Co., Ltd.
发明人： Jong Kyu KIM , So Ra Lee , Ho Jun Suk , Jin Cheol Shin
IPC分类号： H01L33/08 , H01L33/58
CPC分类号： H01L33/08 , H01L27/156 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.
摘要翻译：本发明的示例性实施例涉及包括适于AC驱动的衬底上的多个发光单元的发光二极管。发光二极管包括基板和形成在基板上的多个发光单元。每个发光单元包括在发光单元的边界处的第一区域和与第一区域相对的第二区域。第一电极焊盘形成在发光单元的第一区域中。具有直线形状的第二电极焊盘设置成面对第一电极焊盘，同时区域地限定与第二区域的边界一起的周边区域。导线将第一电极焊盘连接到两个相邻的发光单元之间的第二电极焊盘。

2. 发明申请

US20140087502A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管芯片及其制造方法
公开(公告)号：US20140087502A1
公开(公告)日：2014-03-27
申请号：US14091985
申请日：2013-11-27
申请人： SEOUL OPTO DEVICE CO., LTD.
发明人： Sum Geun LEE , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee
IPC分类号： H01L33/46
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
摘要翻译：本发明的示例性实施例公开了一种包括具有第一表面和第二表面的基板的发光二极管芯片，布置在基板的第一表面上的发光结构，并且包括布置在第一导电类型半导体层以及第二导电型半导体层，布置在基板的第二表面上的分布式布拉格反射器，用于反射从发光结构发射的光的分布式布拉格反射器和布置在分布式布拉格反射器上的金属层，其中分布式布拉格反射器布拉格反射体对于蓝色波长范围内的第一波长的光，绿色波长范围的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率。

3. 发明授权

US08624287B2 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08624287B2
公开(公告)日：2014-01-07
申请号：US13753953
申请日：2013-01-30
申请人： Seoul Opto Device Co., Ltd. , Dae sung Cho
发明人： Sum Geun Lee , Jong Kyu Kim , Chang Youn Kim , Jin Cheol Shin
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/60 , H01L27/156 , H01L33/08 , H01L33/38 , H01L33/46
摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.
摘要翻译：本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和连接器。连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

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