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1. 发明申请

US20120119206A1 Oxide Semiconductor Thin Film Transistor, and Method of Manufacturing the Same 有权
标题翻译：氧化物半导体薄膜晶体管及其制造方法
公开(公告)号：US20120119206A1
公开(公告)日：2012-05-17
申请号：US13075117
申请日：2011-03-29
申请人： Seong-Min Wang , Joo-Sun Yoon , Tae-An Seo , Jeong-Hwan Kim
发明人： Seong-Min Wang , Joo-Sun Yoon , Tae-An Seo , Jeong-Hwan Kim
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/124 , H01L29/42384
摘要： An oxide semiconductor thin film transistor includes a gate electrode on a substrate, the gate electrode having a first area, a gate insulation layer on the gate electrode, the gate insulation layer covering the gate electrode, an active layer on the gate insulation layer, the active layer having a second area that is smaller than the first area, a source electrode on the active layer, the source electrode contacting a source region of the active layer, a drain electrode on the active layer, the drain electrode contacting a drain region of the active layer, and a passivation layer covering the active layer, the source electrode, and the drain electrode.
摘要翻译：氧化物半导体薄膜晶体管包括在基板上的栅电极，栅极具有第一区域，栅电极上的栅极绝缘层，覆盖栅电极的栅极绝缘层，栅极绝缘层上的有源层，活性层，其具有比第一区域小的第二区域，有源层上的源电极，与活性层的源极区域接触的源电极，有源层上的漏极电极，与漏极区域的漏极区域接触的有源层，有源层和覆盖有源层，源电极和漏电极的钝化层。

2. 发明授权

US08450733B2 Oxide semiconductor thin film transistor, and method of manufacturing the same 有权
标题翻译：氧化物半导体薄膜晶体管及其制造方法
公开(公告)号：US08450733B2
公开(公告)日：2013-05-28
申请号：US13075117
申请日：2011-03-29
申请人： Seong-Min Wang , Joo-Sun Yoon , Tae-An Seo , Jeong-Hwan Kim
发明人： Seong-Min Wang , Joo-Sun Yoon , Tae-An Seo , Jeong-Hwan Kim
IPC分类号： H01L29/10 , H01L31/00 , H01L21/00 , H01L21/84
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/124 , H01L29/42384
摘要： An oxide semiconductor thin film transistor includes a gate electrode on a substrate, the gate electrode having a first area, a gate insulation layer on the gate electrode, the gate insulation layer covering the gate electrode, an active layer on the gate insulation layer, the active layer having a second area that is smaller than the first area, a source electrode on the active layer, the source electrode contacting a source region of the active layer, a drain electrode on the active layer, the drain electrode contacting a drain region of the active layer, and a passivation layer covering the active layer, the source electrode, and the drain electrode.
摘要翻译：氧化物半导体薄膜晶体管包括在基板上的栅电极，栅极具有第一区域，栅电极上的栅极绝缘层，覆盖栅电极的栅极绝缘层，栅极绝缘层上的有源层，活性层，其具有比第一区域小的第二区域，有源层上的源电极，与活性层的源极区域接触的源电极，有源层上的漏极电极，与漏极区域的漏极区域接触的有源层，有源层和覆盖有源层，源电极和漏电极的钝化层。

3. 发明授权

US08749725B2 Flat panel display apparatus and method of manufacturing the same 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US08749725B2
公开(公告)日：2014-06-10
申请号：US13064651
申请日：2011-04-06
申请人： Joo-Sun Yoon , Seong-Min Wang
发明人： Joo-Sun Yoon , Seong-Min Wang
IPC分类号： H01L29/10 , G02F1/1343
CPC分类号： G02F1/136213 , G02F2201/40 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L29/4908
摘要： A flat panel display apparatus including a gate electrode on a substrate, a first insulating layer and a semiconductor layer sequentially stacked on the gate electrode and including a transparent conductive oxide, a capacitor first electrode extending on a plane on which the gate electrode extends, and a capacitor second electrode extending on a plane on which the semiconductor layer extends and including a material of the semiconductor layer, wherein the first insulating layer is between the capacitor second electrode and the semiconductor layer, source and drain electrodes that are separated by a second insulating layer and are connected to the semiconductor layer and the capacitor second electrode, a third insulating layer covering the source and drain electrodes, and a pixel electrode electrically connected to the source or drain electrode on the third insulating layer and being electrically connected to one of the source electrode and/or the drain electrode.
摘要翻译：一种平板显示装置，包括基板上的栅极电极，顺序堆叠在栅电极上并包括透明导电氧化物的第一绝缘层和半导体层，在栅电极延伸的平面上延伸的电容器第一电极，以及电容器第二电极，在其上延伸并包括半导体层的材料的平面上延伸，其中第一绝缘层在电容器第二电极和半导体层之间，源极和漏极被第二绝缘体分隔开并且连接到半导体层和电容器第二电极，覆盖源电极和漏电极的第三绝缘层和电连接到第三绝缘层上的源电极或漏电极的像素电极，并且电连接到源电极和/或漏电极。

4. 发明申请

US20120292610A1 OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING OXIDE SEMICONDUCTOR DEVICES, DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：氧化物半导体器件，制造氧化物半导体器件的方法，具有氧化物半导体器件的显示器件，制造具有氧化物半导体器件的显示器件的方法
公开(公告)号：US20120292610A1
公开(公告)日：2012-11-22
申请号：US13229606
申请日：2011-09-09
申请人： Seong-Min Wang , Ki-Wan Ahn , Joo-Sun Yoon , Ki-Hong Kim
发明人： Seong-Min Wang , Ki-Wan Ahn , Joo-Sun Yoon , Ki-Hong Kim
IPC分类号： H01L27/15 , H01L21/36 , H01L33/00 , H01L29/786
CPC分类号： H01L27/1259 , H01L21/0206 , H01L21/32136 , H01L21/44 , H01L21/467 , H01L21/477 , H01L27/1225 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696 , H01L2227/323
摘要： An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.
摘要翻译：氧化物半导体器件包括：衬底上的栅极电极，衬底上的栅极绝缘层，栅极绝缘层上的凹槽结构，栅极绝缘层的第一部分上的源电极，栅极绝缘层的第二部分和源电极和漏电极上的有源图案，填充凹陷结构的有源图案。

5. 发明申请

US20110309362A1 Flat panel display apparatus and method of manufacturing the same 有权
标题翻译：平板显示装置及其制造方法
公开(公告)号：US20110309362A1
公开(公告)日：2011-12-22
申请号：US13064651
申请日：2011-04-06
申请人： Joo-Sun Yoon , Seong-Min Wang
发明人： Joo-Sun Yoon , Seong-Min Wang
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： G02F1/136213 , G02F2201/40 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L29/4908
摘要： A flat panel display apparatus including a gate electrode on a substrate, a first insulating layer and a semiconductor layer sequentially stacked on the gate electrode and including a transparent conductive oxide, a capacitor first electrode extending on a plane on which the gate electrode extends, and a capacitor second electrode extending on a plane on which the semiconductor layer extends and including a material of the semiconductor layer, wherein the first insulating layer is between the capacitor second electrode and the semiconductor layer, source and drain electrodes that are separated by a second insulating layer and are connected to the semiconductor layer and the capacitor second electrode, a third insulating layer covering the source and drain electrodes, and a pixel electrode electrically connected to the source or drain electrode on the third insulating layer and being electrically connected to one of the source electrode and/or the drain electrode.
摘要翻译：一种平板显示装置，包括基板上的栅极电极，顺序堆叠在栅电极上并包括透明导电氧化物的第一绝缘层和半导体层，在栅电极延伸的平面上延伸的电容器第一电极，以及电容器第二电极，在其上延伸并包括半导体层的材料的平面上延伸，其中第一绝缘层在电容器第二电极和半导体层之间，源极和漏极被第二绝缘体分隔开并且连接到半导体层和电容器第二电极，覆盖源电极和漏电极的第三绝缘层和电连接到第三绝缘层上的源电极或漏电极的像素电极，并且电连接到源电极和/或漏电极。

6. 发明申请

US20090147189A1 DISPLAY PANEL 审中-公开
标题翻译：显示面板
公开(公告)号：US20090147189A1
公开(公告)日：2009-06-11
申请号：US12263730
申请日：2008-11-03
申请人： Hyun-Young KIM , Joo-Sun Yoon
发明人： Hyun-Young KIM , Joo-Sun Yoon
IPC分类号： G02F1/1335
CPC分类号： G02F1/133707 , G02F2001/134318
摘要： In a display panel, an array substrate includes a pixel electrode disposed in a pixel area and a switching element connected to the pixel electrode. A color filter substrate is combined with the array substrate. The color filter substrate includes a light-blocking layer, a color filter layer, and a common electrode. The color filter layer is disposed on the light-blocking layer. The common electrode is disposed on the color filter layer. The common electrode has an opening disposed in the pixel area and extending along the longitudinal direction. The opening has left, right, upper and lower sides and a plurality of notch parts disposed at the upper and lower sides. An outermost notch part is spaced apart from the left side or the right side by 20 μm to 30 μm.
摘要翻译：在显示面板中，阵列基板包括设置在像素区域中的像素电极和连接到像素电极的开关元件。滤色器基板与阵列基板结合。滤色器基板包括遮光层，滤色器层和公共电极。滤色层设置在遮光层上。公共电极设置在滤色器层上。公共电极具有设置在像素区域中并沿着纵向方向延伸的开口。开口具有左右，上下两侧以及设置在上侧和下侧的多个切口部。最外侧的切口部分与左侧或右侧隔开20毫米至30毫米。

7. 发明申请

US20080173900A1 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US20080173900A1
公开(公告)日：2008-07-24
申请号：US11981914
申请日：2007-10-31
申请人： Joo-Sun Yoon , Yong-Ho Yang
发明人： Joo-Sun Yoon , Yong-Ho Yang
IPC分类号： H01L27/01
CPC分类号： G02F1/1345 , G02F1/13458 , H01L27/12 , H01L27/124
摘要： A thin film transistor array panel is provided, which includes a substrate including a display region, a chip region, and a pad region; a plurality of signal lines formed on the substrate for electrically connecting the pad region to the chip region and the display region, wherein the signal lines have pads as an end portion and the pads are formed in the pad region; an insulating layer covering the signal lines and having a plurality of contact holes exposing the portions of the signal lines; a plurality of contact assistants formed on the insulating layer and connected to the pads through the contact holes; and a plurality of connection member respectively connected to the contact assistants and formed on the insulating layer for selectively electrically connecting the signal lines, wherein the insulating layer has a boundary line formed by etching, and the boundary line is crenellated.
摘要翻译：提供一种薄膜晶体管阵列面板，其包括包括显示区域，芯片区域和焊盘区域的基板; 形成在所述基板上的多个信号线，用于将所述焊盘区域电连接到所述芯片区域和所述显示区域，其中，所述信号线具有作为端部的焊盘，并且所述焊盘形成在所述焊盘区域中; 绝缘层，覆盖信号线，并具有暴露信号线部分的多个接触孔; 形成在所述绝缘层上并通过所述接触孔与所述焊盘连接的多个接触助剂; 以及多个连接构件，其分别连接到所述接触辅助件并形成在所述绝缘层上，用于选择性地电连接所述信号线，其中所述绝缘层具有通过蚀刻形成的边界线，并且所述边界线被锯齿状。

8. 发明授权

US07309922B2 Lower substrate, display apparatus having the same and method of manufacturing the same 有权
标题翻译：下基板，具有相同的显示装置及其制造方法
公开(公告)号：US07309922B2
公开(公告)日：2007-12-18
申请号：US10968825
申请日：2004-10-19
申请人： Hyun-Young Kim , Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae
发明人： Hyun-Young Kim , Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae
IPC分类号： H01L29/40
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227 , H01L27/12
摘要： In a lower substrate, a display apparatus having the lower substrate and a method of manufacturing the lower substrate, the lower substrate includes a pixel area and a circuit area. An image is displayed in the pixel area. A first signal electrode is disposed in a circuit area. A first insulating layer includes an opening, through which the first signal electrode is exposed. A second signal electrode is disposed on the first insulating layer in the circuit area, and spaced apart from the first signal electrode. A second insulating layer is disposed on the first insulating layer, and includes a contact hole, through which the first and second signal electrodes are exposed. A conductive layer electrically connects the first signal electrode to the second signal electrode. Therefore, a manufacturing process is simplified so that a yield of the lower substrate is increased.
摘要翻译：在下基板中，具有下基板的显示装置和下基板的制造方法，下基板包括像素区域和电路区域。图像显示在像素区域中。第一信号电极设置在电路区域中。第一绝缘层包括第一信号电极暴露的开口。第二信号电极设置在电路区域中的第一绝缘层上，并与第一信号电极间隔开。第二绝缘层设置在第一绝缘层上，并且包括接触孔，第一和第二信号电极通过该接触孔露出。导电层将第一信号电极与第二信号电极电连接。因此，简化了制造工艺，使得下基板的产量增加。

9. 发明授权

US07289188B2 Defect correction of pixel electrode by connection to gate line 有权
公开(公告)号：US07289188B2
公开(公告)日：2007-10-30
申请号：US11675902
申请日：2007-02-16
申请人： Yong-Ho Yang , Joo-Sun Yoon , Kyo-Seop Choo , Jin-Suk Park
发明人： Yong-Ho Yang , Joo-Sun Yoon , Kyo-Seop Choo , Jin-Suk Park
IPC分类号： G02F1/13
CPC分类号： H01L27/124 , G02F1/136259 , G02F2001/136268
摘要： In an array substrate and an LCD apparatus having the same, the array substrate includes a signal line, a first insulating layer formed on the signal line, and a pixel electrode formed on the first insulating layer and overlapped with the signal line. The pixel electrode is electrically connected with the signal line so as to discharge a signal through the signal line. A second insulating layer is disposed between the pixel electrode and the first insulating layer, and includes an opening formed in an overlapped area of the pixel electrode and the signal line so as to partially expose the first insulating layer. Thus, the LCD apparatus may have an enhanced display quality.

10. 发明申请

US20070085947A1 Array substrate, method of manufacturing the same and liquid crystal display device having the same 审中-公开
标题翻译：阵列基板及其制造方法以及具有该基板的液晶显示装置
公开(公告)号：US20070085947A1
公开(公告)日：2007-04-19
申请号：US11490342
申请日：2006-07-20
申请人： Joo-Sun Yoon , Won-Sang Park
发明人： Joo-Sun Yoon , Won-Sang Park
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/133504 , G02F1/133553 , G02F1/136227
摘要： An array substrate includes a switching element, a pixel electrode and an insulating layer. The switching element is formed in a display area of a substrate. The insulating layer is formed on the substrate having the switching element formed thereon. The insulating layer includes a plurality of reflective particles reflecting light incident into an upper portion of the substrate. Therefore, the organic insulating layer having the reflective particles may reflect and transmit light, so that a process forming a conventional reflective electrode or embossing patterns may be unnecessary and a manufacturing process of the array substrate may be simplified.
摘要翻译：阵列基板包括开关元件，像素电极和绝缘层。开关元件形成在基板的显示区域中。绝缘层形成在其上形成有开关元件的基板上。绝缘层包括反射入射到基板的上部的光的多个反射粒子。因此，具有反射粒子的有机绝缘层可以反射和透射光，从而可以不需要形成常规反射电极或压花图案的工艺，并且可以简化阵列基板的制造工艺。

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