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1. 发明申请

US20110140825A1 INDUCTOR 有权
标题翻译：电感器
公开(公告)号：US20110140825A1
公开(公告)日：2011-06-16
申请号：US12968022
申请日：2010-12-14
申请人： Seong-il KIM , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
发明人： Seong-il KIM , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H01F27/30
CPC分类号： H01F17/0006 , H01F2017/0086 , H01L28/10
摘要： Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.
摘要翻译：提供一种电感器。电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子，形成在半导体衬底的一侧上的第一导电线，并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线，以及形成在所述半导体衬底的另一侧上并电连接的第三导电线连接到第一至第四导电端子中的第一和第三导电端子。

2. 发明申请

US20110133843A1 POWER AMPLIFIER DEVICE 有权
标题翻译：功率放大器器件
公开(公告)号：US20110133843A1
公开(公告)日：2011-06-09
申请号：US12960153
申请日：2010-12-03
申请人： Seong-Il KIM , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
发明人： Seong-Il KIM , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0261 , H03F1/52 , H03F3/19 , H03F3/211 , H03F2200/18 , H03F2200/451
摘要： Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.
摘要翻译：提供了一种功率放大器装置。功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传递的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器，多个晶体管。

3. 发明授权

US08130041B2 Power amplifier device 有权
标题翻译：功率放大器装置
公开(公告)号：US08130041B2
公开(公告)日：2012-03-06
申请号：US12960153
申请日：2010-12-03
申请人： Seong-Il Kim , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
发明人： Seong-Il Kim , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H03F3/68
CPC分类号： H03F3/245 , H03F1/0261 , H03F1/52 , H03F3/19 , H03F3/211 , H03F2200/18 , H03F2200/451
摘要： Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.
摘要翻译：提供了一种功率放大器装置。功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传送的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器，多个晶体管。

4. 发明授权

US07986211B2 Inductor 有权
标题翻译：电感器
公开(公告)号：US07986211B2
公开(公告)日：2011-07-26
申请号：US12968022
申请日：2010-12-14
申请人： Seong-il Kim , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
发明人： Seong-il Kim , Jongmin Lee , Byoung-Gue Min , Hyung Sup Yoon , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F2017/0086 , H01L28/10
摘要： Provided is an inductor. The inductor includes a first to a fourth conductive terminals formed in one direction within a semiconductor substrate, a first conductive line formed on one side of the semiconductor substrate and electrically connected to the second and third conductive terminals interiorly positioned among the first to fourth conductive terminals, a second conductive line formed on the one side of the semiconductor substrate and electrically connected to the first and fourth conductive terminals exteriorly positioned among the first to fourth conductive terminals, and a third conductive line formed on the other side of the semiconductor substrate and electrically connected to the first and third conductive terminals among the first to fourth conductive terminals.
摘要翻译：提供一种电感器。电感器包括在半导体衬底内的一个方向上形成的第一至第四导电端子，形成在半导体衬底的一侧上的第一导电线，并且电连接到内部位于第一至第四导电端子之间的第二和第三导电端子形成在所述半导体衬底的一侧上并与外部位于所述第一至第四导电端子之间的所述第一和第四导电端子电连接的第二导电线，以及形成在所述半导体衬底的另一侧上并电连接的第三导电线连接到第一至第四导电端子中的第一和第三导电端子。

5. 发明授权

US08853821B2 Vertical capacitors and methods of forming the same 有权
标题翻译：垂直电容器及其形成方法
公开(公告)号：US08853821B2
公开(公告)日：2014-10-07
申请号：US13618873
申请日：2012-09-14
申请人： Seong-il Kim , Sang-Heung Lee , Jong-Won Lim , Hyung Sup Yoon , Jongmin Lee , Byoung-Gue Min , Jae Kyoung Mun , Eun Soo Nam
发明人： Seong-il Kim , Sang-Heung Lee , Jong-Won Lim , Hyung Sup Yoon , Jongmin Lee , Byoung-Gue Min , Jae Kyoung Mun , Eun Soo Nam
IPC分类号： H01L21/02
CPC分类号： H01L28/91 , H01L23/481 , H01L28/92 , H01L2924/0002 , H01L2924/00
摘要： Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.
摘要翻译：提供垂直电容器及其形成方法。垂直电容器的形成可以包括在衬底的顶表面上形成输入和输出电极，蚀刻衬底的底表面以形成通孔电极，然后在通孔电极之间形成电介质层。结果，可以在基板的小区域中提供具有高电容的垂直电容器。

6. 发明授权

US08124489B2 Monolithic microwave integrated circuit device and method of forming the same 失效
标题翻译：单片微波集成电路器件及其形成方法
公开(公告)号：US08124489B2
公开(公告)日：2012-02-28
申请号：US12832432
申请日：2010-07-08
申请人： Byoung-Gue Min , Jongmin Lee , Seong-Il Kim , Hyung Sup Yoon
发明人： Byoung-Gue Min , Jongmin Lee , Seong-Il Kim , Hyung Sup Yoon
IPC分类号： H01L21/331
CPC分类号： H01L29/66318 , H01L21/8252 , H01L27/0605 , H01L29/66204 , H01L29/7371 , H01L29/868
摘要： Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.
摘要翻译：提供了一种单片微波集成电路器件及其形成方法。该方法包括：在基底的异质结双极晶体管（HBT）区域和PIN二极管区域上形成子集电极层，集电极层，基极层，发射极层和发射极盖层; 在HBT区域中形成发射极图案和发射极盖图案，并通过图案化发射极层和发射极盖层而使基底层曝光; 并且通过用第一类型杂质掺杂PIN二极管区域的集电极层的一部分来形成本征区域，PIN二极管区域与HBT区域间隔开。

7. 发明申请

US20110140175A1 MONOLITHIC MICROWAVE INTEGRATED CIRCUIT DEVICE AND METHOD OF FORMING THE SAME 失效
标题翻译：单片微波集成电路装置及其形成方法
公开(公告)号：US20110140175A1
公开(公告)日：2011-06-16
申请号：US12832432
申请日：2010-07-08
申请人： Byoung-Gue MIN , Jongmin Lee , Seong-ll Kim , Hyung Sup Yoon
发明人： Byoung-Gue MIN , Jongmin Lee , Seong-ll Kim , Hyung Sup Yoon
IPC分类号： H01L27/06 , H01L21/8222
CPC分类号： H01L29/66318 , H01L21/8252 , H01L27/0605 , H01L29/66204 , H01L29/7371 , H01L29/868
摘要： Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.
摘要翻译：提供了一种单片微波集成电路器件及其形成方法。该方法包括：在基底的异质结双极晶体管（HBT）区域和PIN二极管区域上形成子集电极层，集电极层，基极层，发射极层和发射极盖层; 在HBT区域中形成发射极图案和发射极盖图案，并通过图案化发射极层和发射极盖层而使基底层曝光; 并且通过用第一类型杂质掺杂PIN二极管区域的集电极层的一部分来形成本征区域，PIN二极管区域与HBT区域间隔开。

8. 发明授权

US09211049B2 Dishwasher 有权
标题翻译：洗碗机
公开(公告)号：US09211049B2
公开(公告)日：2015-12-15
申请号：US13444048
申请日：2012-04-11
申请人： Jongmin Lee , Taehee Lee , Haewoong Lee , Youmin Lee , Seongho Kim , Jungyoup Han
发明人： Jongmin Lee , Taehee Lee , Haewoong Lee , Youmin Lee , Seongho Kim , Jungyoup Han
IPC分类号： B08B3/00 , A47L15/42 , A47L15/00
CPC分类号： A47L15/4246 , A47L15/0031 , A47L15/0036 , A47L15/0057 , A47L15/4208 , A47L15/4221 , A47L15/4225 , A47L15/4234 , A47L15/4293 , A47L2301/04 , A47L2401/20 , A47L2501/01 , A47L2501/02 , A47L2501/06 , A47L2501/34
摘要： Provided is a dishwasher. The dishwasher includes a tub having a receiving space in which objects to be washed are received, a sump for storing wash water supplied into the tub, a heater that heats the wash water in the sump to generate steam, a steam nozzle for spraying the steam into the tub, a filter assembly that purifies the wash water supplied to the sump and communicates with the tub so that the steam generated in the sump is supplied into the tub and a barrier for dividing inner space of the sump into a first section communicating with the filter assembly and a second section communicating with the steam nozzle. The barrier allows the wash water flows between the first and second sections and suppresses flow of the steam from the second section to the first section.
摘要翻译：提供洗碗机。洗碗机包括具有容纳空间的容器，容纳被洗涤物体的容器，用于储存供给到洗涤桶中的洗涤水的贮槽;加热器，用于加热贮槽中的洗涤水以产生蒸汽;蒸汽喷嘴，用于喷射蒸汽一个过滤器组件，其净化供给到贮槽的洗涤水并与该桶连通，使得在该贮槽中产生的蒸汽被供应到该桶中，以及一个屏障，用于将贮槽的内部空间分成与第过滤器组件和与蒸汽喷嘴连通的第二部分。屏障允许洗涤水在第一和第二部分之间流动并且抑制蒸汽从第二部分流到第一部分。

9. 发明授权

US08907299B2 Film member, film target for laser-driven ion acceleration, and manufacturing methods thereof 有权
标题翻译：薄膜构件，激光驱动离子加速用薄膜靶及其制造方法
公开(公告)号：US08907299B2
公开(公告)日：2014-12-09
申请号：US13325602
申请日：2011-12-14
申请人： Il Woo Choi , Jongmin Lee , Chang-Lyoul Lee , KeeHwan Nam , I Jong Kim , Ki Hong Pae
发明人： Il Woo Choi , Jongmin Lee , Chang-Lyoul Lee , KeeHwan Nam , I Jong Kim , Ki Hong Pae
IPC分类号： H01J27/24 , B29C41/00 , B29C41/08 , B29C41/12 , C23C14/00
CPC分类号： C23C14/0005
摘要： The present disclosure provides a method of manufacturing film member for laser-driven ion acceleration, a film target, and a method of manufacturing the same, so that only the film member exists at a laser focusing point on the film target, allowing repeated ion acceleration from the film member by focusing high power laser beams thereon. The method includes preparing a film member solution containing a film material to be used for laser-driven ion acceleration; forming a film member on a base substrate by using the film member solution; and separating the film member from the base substrate by dipping the base substrate having the film member formed thereon into a film parting solvent.
摘要翻译：本公开内容提供了一种制造用于激光驱动的离子加速的膜构件的方法，膜靶及其制造方法，使得仅在膜靶上的激光聚焦点处存在膜构件，允许重复的离子加速通过在其上聚焦高功率激光束从胶片构件。该方法包括制备包含用于激光离子加速的膜材料的膜构件溶液; 通过使用薄膜构件溶液在基底基板上形成薄膜构件; 并且通过将其上形成有所述膜构件的基底浸渍到分离溶剂中将膜构件与基底基板分离。

10. 发明申请

US20090205595A1 Continuously variable valve lift system including valve deactivation capability on one of two dual intake vavles 有权
标题翻译：连续可变气门升程系统，包括两个双进气门之一的阀门停用能力
公开(公告)号：US20090205595A1
公开(公告)日：2009-08-20
申请号：US12070404
申请日：2008-02-19
申请人： Jongmin Lee , Richard B. Roe
发明人： Jongmin Lee , Richard B. Roe
IPC分类号： F01L1/34
CPC分类号： F01L13/0026 , F01L1/053 , F01L1/185 , F01L1/26 , F01L13/0005 , F01L2103/01 , F01L2105/00
摘要： In a dual intake valve arrangement for an internal combustion engine, a continuously variable valve lift (CVVL) system controls two intake valves for one or more engine cylinders. In each cylinder, one of the intake valves includes an associated valve deactivation device, and the other intake valve does not. To improve in-cylinder air flow turbulence under low valve lift, one of the intake valves may be deactivated, resulting in mixture intake through only one valve, resulting in strong swirl by unbalanced flow. A CVVL-equipped engine including a valve deactivation device provides the same amount of air flow for the same engine load as a prior art CVVL engine. A method of introducing a swirl to the mixture is also described.
摘要翻译：在用于内燃机的双进气阀装置中，连续可变气门升程（CVVL）系统控制用于一个或多个发动机气缸的两个进气门。在每个气缸中，其中一个进气门包括一个关联的阀门停用装置，而另一个进气门则不包括。为了改善在低气门升程下的气缸内气流湍流，其中一个进气门可能会失效，从而仅通过一个阀门进行混合进气，导致不平衡流动引起强烈的漩涡。具有阀停用装置的CVVL配置的发动机为与现有技术的CVVL发动机相同的发动机负载提供相同量的气流。还描述了向混合物引入涡流的方法。

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