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    • 10. 发明授权
    • Slurry composition for chemical mechanical polishing and precursor composition thereof
    • 用于化学机械抛光的浆料组合物及其前体组合物
    • US07695637B2
    • 2010-04-13
    • US11615094
    • 2006-12-22
    • Tae Won ParkIn Kyung LeeByoung Ho Choi
    • Tae Won ParkIn Kyung LeeByoung Ho Choi
    • H01L21/302
    • C09K3/1463C09G1/02H01L21/31053
    • Disclosed are a slurry composition for chemical mechanical polishing and a precursor composition thereof. The polishing slurry composition includes deionized water, abrasive particles, a pH-adjusting agent and a surfactant, wherein the surfactant includes two or more ionic moieties and two or more lipophilic groups. The polishing slurry composition can polish convex surfaces of a semiconductor having a step height at a higher rate than the polishing rate for concave surfaces acting as polishing stop layers of the semiconductor so that the polishing can be self-stopped, reduces the occurrence of surface defects after the polishing process, and has a high degree of polishing planarization and good dispersion stability.
    • 公开了一种用于化学机械抛光的浆料组合物及其前体组合物。 抛光浆料组合物包括去离子水,磨料颗粒,pH调节剂和表面活性剂,其中表面活性剂包括两个或多个离子部分和两个或更多个亲脂基团。 抛光浆料组合物可以对作为半导体的抛光停止层的凹面的抛光速率高的阶梯高度的半导体的凸面进行抛光,使得抛光可以自停,减少表面缺陷的发生 在抛光过程之后,并且具有高度的抛光平坦化和良好的分散稳定性。