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1. 发明申请

US20150349133A1 OXIDE SEMICONDUCTOR STACKED FILM AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20150349133A1
公开(公告)日：2015-12-03
申请号：US14813408
申请日：2015-07-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Ryosuke WATANABE , Masashi OOTA , Noritaka ISHIHARA , Koki INOUE
IPC分类号： H01L29/786
CPC分类号： H01L29/1054 , H01L22/14 , H01L29/247 , H01L29/42356 , H01L29/42384 , H01L29/78606 , H01L29/7869 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

2. 发明申请

US20180122958A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20180122958A1
公开(公告)日：2018-05-03
申请号：US15846518
申请日：2017-12-19
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786 , H01L29/24 , H01L29/04 , H01L29/66 , H01L27/12 , H01L29/12
CPC分类号： H01L29/7869 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/78696
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

3. 发明申请

US20150050775A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20150050775A1
公开(公告)日：2015-02-19
申请号：US14529525
申请日：2014-10-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Ryosuke WATANABE , Suzunosuke HIRAISHI , Junichiro SAKATA
IPC分类号： H01L21/477 , H01L29/66
CPC分类号： H01L21/477 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.
摘要翻译：目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。

4. 发明申请

US20150041801A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150041801A1
公开(公告)日：2015-02-12
申请号：US14447875
申请日：2014-07-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Takuya HIROHASHI , Masahiro TAKAHASHI , Motoki NAKASHIMA , Ryosuke WATANABE , Masashi TSUBUKU
IPC分类号： H01L29/792 , H01L29/24
CPC分类号： H01L29/792 , H01L29/24 , H01L29/4908 , H01L29/513 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states.
摘要翻译：半导体器件包括半导体层，与半导体层重叠的栅极电极，在半导体层和栅电极之间的第一栅极绝缘层，以及位于第一栅极绝缘层和栅电极之间的第二栅极绝缘层。第一栅极绝缘层包括其中氮含量低于或等于5at的氧化物。％，第二栅极绝缘层包括电荷陷阱状态。

5. 发明申请

US20160336456A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE 审中-公开
标题翻译：半导体器件，显示器件和电子器件
公开(公告)号：US20160336456A1
公开(公告)日：2016-11-17
申请号：US15220532
申请日：2016-07-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786 , H01L29/04 , H01L29/45 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/045 , H01L29/45 , H01L29/78606 , H01L29/78696
摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.
摘要翻译：在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻可以减少漏电极。

6. 发明申请

US20140252345A1 SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体膜和半导体器件
公开(公告)号：US20140252345A1
公开(公告)日：2014-09-11
申请号：US14196281
申请日：2014-03-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masashi TSUBUKU , Ryosuke WATANABE
IPC分类号： H01L31/0336 , H01L33/18
CPC分类号： G01R31/2656 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L22/12 , H01L22/14 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10−2/cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.
摘要翻译：提供了相对于光照射具有高稳定性的氧化物半导体膜或者相对于光照射具有高稳定性的半导体器件。本发明的一个实施方案是包括氧化物的半导体膜，其中通过在400nm至800nm的波长范围内的恒定光电流方法（CPM）观察到光吸收，并且其中缺陷水平的吸收系数是通过从光吸收中除去带尾的光吸收而得到的，小于或等于5×10-2 / cm。或者，使用半导体膜制造半导体器件。

7. 发明申请

US20140113405A1 METHOD FOR FORMING MULTILAYER FILM INCLUDING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：用于形成包含氧化物半导体膜的多层膜的方法和用于制造半导体器件的方法
公开(公告)号：US20140113405A1
公开(公告)日：2014-04-24
申请号：US14055970
申请日：2013-10-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masashi TSUBUKU , Ryosuke WATANABE , Noritaka ISHIHARA , Masashi OOTA
IPC分类号： H01L29/66
CPC分类号： H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02488 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02631 , H01L21/02664 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.
摘要翻译：形成具有低密度局部化水平的氧化物半导体膜。为了改善包括氧化物半导体的半导体器件的电特性。在与用作沟道的氧化物半导体膜接触的含有In或Ga的氧化物膜上加氧后，进行热处理，使含有In或Ga的氧化物膜中的氧转移到作为通道发挥作用的氧化物半导体膜，使得氧化物半导体膜中的氧空位量减少。此外，形成含有In或Ga的氧化物膜，在氧化膜上添加氧，在氧化膜上形成氧化物半导体膜，然后进行热处理。

8. 发明申请

US20220320339A1 METAL OXIDE, FORMATION METHOD OF METAL OXIDE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220320339A1
公开(公告)日：2022-10-06
申请号：US17615859
申请日：2020-06-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei YAMAZAKI , Yoshihiro KOMATSU , Hiromi SAWAI , Ryosuke WATANABE , Shinobu KAWAGUCHI , Shunichi ITO
IPC分类号： H01L29/786 , H01L29/66
摘要： A novel metal oxide is provided. The metal oxide includes a c-axis aligned crystal and contains indium, an element M (M is gallium, aluminum, yttrium, or tin), and zinc. In the metal oxide, the diffusion length of hydrogen is 200 nm or less and absorption due to localized states measured by a CPM is 0.01/cm or less. The diffusion length of hydrogen is calculated with the temperature being 400° C. and 1 hour.

9. 发明申请

US20150287660A1 LAMINATING SYSTEM, IC SHEET, SCROLL OF IC SHEET, AND METHOD FOR MANUFACTURING IC CHIP 审中-公开
标题翻译：层压系统，集成电路板，电路板的滚动及制造IC芯片的方法
公开(公告)号：US20150287660A1
公开(公告)日：2015-10-08
申请号：US14724152
申请日：2015-05-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Ryosuke WATANABE , Naoto KUSUMOTO , Osamu NAKAMURA
IPC分类号： H01L23/31 , G06K19/077 , H01L21/56
CPC分类号： G06K19/07749 , G06K19/07718 , G06K19/07722 , H01L21/56 , H01L21/561 , H01L21/568
摘要： Thin film integrated circuits are peeled from a substrate and the peeled thin film integrated circuits are sealed, efficiently in order to improve manufacturing yields. The present invention provides laminating system comprising transporting means for transporting a substrate provided with a plurality of thin film integrated circuits; first peeling means for bonding first surfaces of the thin film integrated circuits to a first sheet member to peel the thin film integrated circuits from the substrate; second peeling means for bonding second surfaces of the thin film integrated circuits to a second sheet member to peel the thin film integrated circuits from the first sheet member; and sealing means for interposing the thin film integrated circuits between the second sheet member and a third sheet member to seal the thin film integrated circuit with the second sheet member and the third sheet member.
摘要翻译：薄膜集成电路从基板剥离，并且剥离的薄膜集成电路被有效地密封以提高制造成品率。本发明提供了一种层叠体系，其包括用于输送设置有多个薄膜集成电路的基板的输送机构; 第一剥离装置，用于将薄膜集成电路的第一表面接合到第一片状部件，以从基板剥离薄膜集成电路; 第二剥离装置，用于将薄膜集成电路的第二表面接合到第二片状部件，以将薄膜集成电路从第一片状部件剥离; 以及密封装置，用于将所述薄膜集成电路插入所述第二片状部件和第三片状部件之间，以与所述第二片状部件和所述第三片状部件密封所述薄膜集成电路。

10. 发明申请

US20150104901A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20150104901A1
公开(公告)日：2015-04-16
申请号：US14574964
申请日：2014-12-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Ryosuke WATANABE , Junichiro SAKATA , Kengo AKIMOTO , Akiharu MIYANAGA , Takuya HIROHASHI , Hideyuki KISHIDA
IPC分类号： H01L29/786 , H01L21/263 , H01L29/66
CPC分类号： H01L29/78696 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
摘要翻译：本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了针状晶体组是无定形区域或非晶态和微晶体混合的区域。因此，可以形成具有良好电特性的高可靠性半导体器件。

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