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1. 发明申请

US20170271421A1 DISPLAY DEVICE 有权
公开(公告)号：US20170271421A1
公开(公告)日：2017-09-21
申请号：US15456887
申请日：2017-03-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuhiro JINBO , Kohei YOKOYAMA , Yuki TAMATSUKURI , Naoto GOTO , Masami JINTYOU , Masayoshi DOBASHI , Masataka NAKADA , Akihiro CHIDA , Naoyuki SENDA
IPC分类号： H01L27/32
CPC分类号： H01L27/3258 , H01L51/5253 , H01L2251/301 , H01L2251/5338
摘要： To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

2. 发明申请

US20200373430A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20200373430A1
公开(公告)日：2020-11-26
申请号：US16635295
申请日：2018-08-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yukinori SHIMA , Masataka NAKADA , Masayoshi DOBASHI , Kenichi OKAZAKI
IPC分类号： H01L29/786 , G02F1/1368 , G02F1/1345
摘要： A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a first conductive layer, and a second conductive layer. The second semiconductor layer is positioned over the first semiconductor layer, the second conductive layer is positioned on the second semiconductor layer, and the second insulating layer is provided so as to cover a top surface and a side surface of the second conductive layer. The second conductive layer and the second insulating layer include a first opening, and the third semiconductor layer is provided in contact with a top surface of the second insulating layer, a side surface of the first opening, and the second semiconductor layer. The first insulating layer is positioned between the first conductive layer and the third semiconductor layer, the third insulating layer is positioned between the first insulating layer and the first conductive layer, and the fourth insulating layer is provided so as to surround the first conductive layer.

3. 发明申请

US20180247990A1 DISPLAY DEVICE 审中-公开
公开(公告)号：US20180247990A1
公开(公告)日：2018-08-30
申请号：US15966640
申请日：2018-04-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuhiro JINBO , Kohei YOKOYAMA , Yuki TAMATSUKURI , Naoto GOTO , Masami JINTYOU , Masayoshi DOBASHI , Masataka NAKADA , Akihiro CHIDA , Naoyuki SENDA
IPC分类号： H01L27/32 , H01L51/52
CPC分类号： H01L27/3258 , H01L51/5253 , H01L2251/301 , H01L2251/5338
摘要： To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

4. 发明公开

US20240038777A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240038777A1
公开(公告)日：2024-02-01
申请号：US18224383
申请日：2023-07-20
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masakatsu OHNO , Masataka NAKADA , Yukinori SHIMA , Masayoshi DOBASHI , Junichi KOEZUKA , Masami JINTYOU
IPC分类号： H01L27/12
CPC分类号： H01L27/124 , H01L27/1259 , H01L2933/0066 , H01L33/62
摘要： To provide a semiconductor device that occupies a small area. The semiconductor device includes a first conductive layer, first to fifth insulating layers, and a second conductive layer that are stacked in this order and further includes a semiconductor layer, a third conductive layer, and a sixth insulating layer. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surfaces of the first to fifth insulating layers, and the second conductive layer. The sixth insulating layer is over the semiconductor layer. The third conductive layer is over the sixth insulating layer and overlaps with the semiconductor layer with the sixth insulating layer between the third conductive layer and the semiconductor layer. The first insulating layer includes a region having a higher hydrogen content than the second insulating layer. The fifth insulating layer includes a region having a higher hydrogen content than the fourth insulating layer. The third insulating layer contains oxygen.

5. 发明申请

US20210399140A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210399140A1
公开(公告)日：2021-12-23
申请号：US17279153
申请日：2019-09-27
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Rai SATO , Masami JINTYOU , Masayoshi DOBASHI , Takashi SHIRAISHI , Satoru SAITO , Yasutaka NAKAZAWA
IPC分类号： H01L29/786 , H01L29/423 , H01L29/66
摘要： A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer. It is preferable that the semiconductor layer include a first region, a pair of second regions, and a pair of third regions; the first region overlap with the first insulating layer and the metal oxide layer; the second regions between which the first region is sandwiched overlap with the first insulating layer and not overlap with the metal oxide layer; the third regions between which the first region and the pair of second regions are sandwiched not overlap with the first insulating layer; and the third regions be in contact with the second insulating layer.

6. 发明公开

US20230320135A1 Semiconductor Device And Manufacturing Method Of The Semiconductor Device 审中-公开
公开(公告)号：US20230320135A1
公开(公告)日：2023-10-05
申请号：US18127198
申请日：2023-03-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuharu HOSAKA , Masami JINTYOU , Takahiro IGUCHI , Chieko MISAMA , Ami SATO , Masayoshi DOBASHI
IPC分类号： H10K59/121 , H10K59/12
CPC分类号： H10K59/1213 , H10K59/1201
摘要： Provided is a semiconductor device having a high degree of integration, which includes first and second transistors and a first insulating layer. The first transistor includes a first semiconductor layer, a second insulating layer, and first to third conductive layers. The second transistor includes a second semiconductor layer, a third insulating layer, and fourth to sixth conductive layers. The first insulating layer includes a region in contact with the first semiconductor layer and the first conductive layer and includes an opening reaching the first conductive layer. The first semiconductor layer is in contact with a top surface of the first conductive layer, an inner wall of the opening, and the second conductive layer. The second conductive layer is positioned over the first insulating layer. The third conductive layer is positioned over the first semiconductor layer and includes a region overlapping with the inner wall of the opening with the second insulating layer positioned therebetween. The second semiconductor layer is positioned over the first insulating layer and in contact with side and top surfaces of a side end portion of the fourth conductive layer and side and top surfaces of a side end portion of the fifth conductive layer; the side end portions face each other. The sixth conductive layer is positioned over the second semiconductor layer with the third insulating layer positioned therebetween. The first transistor is electrically connected to the second transistor.

7. 发明申请

US20210126132A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210126132A1
公开(公告)日：2021-04-29
申请号：US17257364
申请日：2019-06-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Rai SATO , Masami JINTYOU , Masayoshi DOBASHI , Takashi SHIRAISHI
IPC分类号： H01L29/786 , G02F1/1362 , H01L27/12 , H01L29/66
摘要： A transistor in which shape defects are unlikely to occur is provided. A transistor with favorable electrical characteristics is provided. A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a transistor. The transistor includes a semiconductor layer, a first insulating layer, a metal oxide layer, a functional layer, and a conductive layer. The first insulating layer is positioned over the semiconductor layer. The metal oxide layer is positioned over the first insulating layer. The functional layer is positioned over the metal oxide layer. The conductive layer is positioned over the functional layer. The semiconductor layer, the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer have regions overlapping with each other. In the channel length direction of the transistor, end portions of the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer are positioned inward from an end portion of the semiconductor layer. An etching rate of the functional layer with an etchant containing one or more of phosphoric acid, acetic acid, nitric acid, hydrochloric acid, and sulfuric acid is lower than an etching rate of the conductive layer.

8. 发明申请

US20190288092A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190288092A1
公开(公告)日：2019-09-19
申请号：US16344177
申请日：2017-10-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masahiro KATAYAMA , Masayoshi DOBASHI , Masataka NAKADA
IPC分类号： H01L29/66 , H01L29/786
摘要： A semiconductor device is manufactured with high mass productivity at low cost. Yield in a manufacturing process of the semiconductor device is improved. An island-shaped metal oxide layer is formed over a substrate, a resin layer is formed over the metal oxide layer to cover an end portion of the metal oxide layer, and the metal oxide layer and the resin layer are separated by light irradiation. After forming the resin layer and before the light irradiation, an insulating layer is formed over the resin layer. For example, the resin layer is formed in an island shape and the insulating layer is formed to cover an end portion of the resin layer. In the case where an adhesive layer is formed over the resin layer, the adhesive layer is preferably formed to be located inward from the end portion of the metal oxide layer.

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