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1. 发明授权

US12117872B2 Electronic device, storage medium, program, and displaying method 有权
公开(公告)号：US12117872B2
公开(公告)日：2024-10-15
申请号：US18388357
申请日：2023-11-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kunio Hosoya
IPC分类号： G06F1/16 , G06F3/01 , G06F3/0484 , G06T13/20 , G06T15/00 , H04M1/02
CPC分类号： G06F1/1652 , G06F1/1694 , G06F3/011 , G06F3/0484 , G06T13/20 , G06T15/005 , H04M1/0268 , G06F2200/1637 , G06F2203/04102
摘要： An electronic device is provided which displays an object (body) on a flexible display screen in accordance with a three-dimensional shape of the display screen by utilizing the flexibility of the display screen. An electronic device including a display portion which includes a flexible display device displaying an object on a display screen; a detection portion detecting positional data of a given part of the display screen; and an arithmetic portion calculating a three-dimensional shape of the display screen on the basis of the positional data and computing motion of the object to make the object move according to a given law in accordance with the calculated three-dimensional shape of the display screen.

2. 发明授权

US11815956B2 Electronic device, storage medium, program, and displaying method 有权
公开(公告)号：US11815956B2
公开(公告)日：2023-11-14
申请号：US17526245
申请日：2021-11-15
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kunio Hosoya
IPC分类号： G06F1/16 , G06T13/20 , H04M1/02 , G06F3/01 , G06F3/0484 , G06T15/00
CPC分类号： G06F1/1652 , G06F1/1694 , G06F3/011 , G06F3/0484 , G06T13/20 , G06T15/005 , H04M1/0268 , G06F2200/1637 , G06F2203/04102
摘要： An electronic device is provided which displays an object (body) on a flexible display screen in accordance with a three-dimensional shape of the display screen by utilizing the flexibility of the display screen. An electronic device including a display portion which includes a flexible display device displaying an object on a display screen; a detection portion detecting positional data of a given part of the display screen; and an arithmetic portion calculating a three-dimensional shape of the display screen on the basis of the positional data and computing motion of the object to make the object move according to a given law in accordance with the calculated three-dimensional shape of the display screen.

3. 发明申请

US20150179682A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20150179682A1
公开(公告)日：2015-06-25
申请号：US14641838
申请日：2015-03-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kunio Hosoya
IPC分类号： H01L27/12
CPC分类号： H01L27/1255 , G02F1/1362 , G02F1/136227 , G02F1/1368 , G02F2201/50 , H01L27/124
摘要： It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film fanned so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.
摘要翻译：本发明的目的是获得接触缺陷减小的液晶显示装置，接触电阻的增加被抑制，开口率高。本发明涉及具有基板的液晶显示装置; 设置在基板上的薄膜晶体管，其包括栅极布线，栅极绝缘膜，岛状半导体膜，源极区域和漏极区域; 源极布线，其设置在所述基板上并且连接到所述源极区域; 漏极，其设置在所述衬底上并连接到所述漏极区; 设置在基板上的辅助电容器; 连接到所述漏电极的像素电极; 以及覆盖保护膜具有开口的薄膜晶体管和源极布线的保护膜，并且辅助电容器形成在形成开口的区域中。

4. 发明授权

US08916424B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08916424B2
公开(公告)日：2014-12-23
申请号：US13755862
申请日：2013-01-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsuo Isobe , Kunio Hosoya
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02178 , H01L21/02244 , H01L21/0237 , H01L21/02565 , H01L21/383 , H01L21/425 , H01L21/441 , H01L21/47573 , H01L27/10873 , H01L27/1108 , H01L27/1156 , H01L27/1225 , H01L29/24 , H01L29/41733 , H01L29/4908 , H01L29/495 , H01L29/517 , H01L29/7869
摘要： To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.
摘要翻译：为了提高包含氧化物半导体的晶体管的生产率，具有良好的电气特性。在包括氧化物半导体膜上的栅绝缘膜和栅电极的顶栅晶体管中，在氧化物半导体膜上形成金属膜，向金属膜中添加氧以形成金属氧化物膜，并且金属氧化物膜用作栅极绝缘膜。在氧化物半导体膜上形成氧化物绝缘膜之后，可以在氧化物绝缘膜上形成金属膜。向金属膜中添加氧以形成金属氧化物膜，并且还添加到氧化物半导体膜或氧化物绝缘膜。

5. 发明申请

US20140234700A1 ELECTRODE FOR STORAGE BATTERY 有权
标题翻译：蓄电池电极
公开(公告)号：US20140234700A1
公开(公告)日：2014-08-21
申请号：US14180573
申请日：2014-02-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Tamae Moriwaka , Satoshi Seo , Takuya Hirohashi , Kunio Hosoya , Shunsuke Adachi
IPC分类号： H01M4/583 , H01M4/58 , H01M4/62 , H01M4/136 , H01M10/054 , H01M10/0568 , H01M4/133
CPC分类号： H01M4/625 , H01M4/136 , H01M4/5825 , H01M4/587 , H01M10/054 , H01M10/0568
摘要： With a small amount of a conductive additive, an electrode for a storage battery including an active material layer which is highly filled with an active material is provided. The use of the electrode enables fabrication of a storage battery having high capacity per unit volume of the electrode. By using graphene as a conductive additive in an electrode for a storage battery including a positive electrode active material, a network for electron conduction through graphene is formed. Consequently, the electrode can include an active material layer in which particles of an active material are electrically connected to each other by graphene. Therefore, graphene is used as a conductive additive in an electrode for a sodium-ion secondary battery including an active material with low electric conductivity, for example, an active material with a band gap of 3.0 eV or more.
摘要翻译：通过少量导电添加剂，提供了包含高活性物质的活性物质层的蓄电池用电极。使用电极可以制造具有每单位体积电极的高容量的蓄电池。通过在包含正极活性物质的蓄电池用电极中使用石墨烯作为导电性添加剂，形成通过石墨烯进行电子传导的网络。因此，电极可以包括活性材料层，其中活性材料的颗粒通过石墨烯彼此电连接。因此，在包含具有低导电性的活性物质的钠离子二次电池用电极，例如带隙为3.0eV以上的活性物质中，使用石墨烯作为导电性添加剂。

6. 发明授权

US10467797B2 Electronic device, storage medium, program, and displaying method 有权
公开(公告)号：US10467797B2
公开(公告)日：2019-11-05
申请号：US15713729
申请日：2017-09-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kunio Hosoya
IPC分类号： G06T15/00 , G06F1/16 , G06T13/20 , G06F3/01 , H04M1/02
摘要： An electronic device is provided which displays an object (body) on a flexible display screen in accordance with a three-dimensional shape of the display screen by utilizing the flexibility of the display screen. An electronic device including a display portion which includes a flexible display device displaying an object on a display screen; a detection portion detecting positional data of a given part of the display screen; and an arithmetic portion calculating a three-dimensional shape of the display screen on the basis of the positional data and computing motion of the object to make the object move according to a given law in accordance with the calculated three-dimensional shape of the display screen.

7. 发明授权

US09805494B2 Electronic device, storage medium, program, and displaying method 有权
公开(公告)号：US09805494B2
公开(公告)日：2017-10-31
申请号：US13875400
申请日：2013-05-02
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Kunio Hosoya
IPC分类号： G06T15/00 , G06F1/16 , G06F3/01 , G06T13/20 , H04M1/02
CPC分类号： G06T15/005 , G06F1/1652 , G06F1/1694 , G06F3/011 , G06F2200/1637 , G06F2203/04102 , G06T13/20 , G09G2380/02 , H04M1/0268
摘要： An electronic device is provided which displays an object (body) on a flexible display screen in accordance with a three-dimensional shape of the display screen by utilizing the flexibility of the display screen. An electronic device including a display portion which includes a flexible display device displaying an object on a display screen; a detection portion detecting positional data of a given part of the display screen; and an arithmetic portion calculating a three-dimensional shape of the display screen on the basis of the positional data and computing motion of the object to make the object move according to a given law in accordance with the calculated three-dimensional shape of the display screen.

8. 发明授权

US09437623B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US09437623B2
公开(公告)日：2016-09-06
申请号：US14641838
申请日：2015-03-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kunio Hosoya
IPC分类号： G02F1/1343 , H01L27/12 , G02F1/1362 , G02F1/1368
CPC分类号： H01L27/1255 , G02F1/1362 , G02F1/136227 , G02F1/1368 , G02F2201/50 , H01L27/124
摘要： It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.

9. 发明授权

US09341577B2 Examination element and examination container 有权
标题翻译：检查单元和检查容器
公开(公告)号：US09341577B2
公开(公告)日：2016-05-17
申请号：US14615023
申请日：2015-02-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kunio Hosoya
IPC分类号： G01N33/48 , G01N33/483 , G01N33/487 , G01N33/497 , G01N33/50 , G01N33/52 , G01N21/78 , G01N33/493 , A61B10/00
CPC分类号： G01N21/78 , A61B10/007 , G01N33/493 , G01N33/521
摘要： The present invention relates to an examination element that includes an antenna; a hygroscopic portion that absorbs a specimen; a reagent portion that reacts with the specimen; and a chip including a semiconductor device capable of wireless communication and a photo sensor that detects a change in a color of the reagent portion. A change in the reagent portion is detected by the photo sensor, the detected data is stored in the semiconductor device capable of wireless communication, and the data is transmitted to an external database.
摘要翻译：本发明涉及一种包括天线的检查元件; 吸收样品的吸湿部分; 与试样反应的试剂部分; 以及包括能够进行无线通信的半导体器件的芯片和检测试剂部分的颜色变化的光电传感器。通过光传感器检测试剂部分的变化，将检测到的数据存储在能够进行无线通信的半导体装置中，并将数据发送到外部数据库。

10. 发明授权

US09117662B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09117662B2
公开(公告)日：2015-08-25
申请号：US14578578
申请日：2014-12-22
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Atsuo Isobe , Kunio Hosoya
IPC分类号： H01L21/00 , H01L21/02 , H01L29/66 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/02178 , H01L21/02244 , H01L21/0237 , H01L21/02565 , H01L21/383 , H01L21/425 , H01L21/441 , H01L21/47573 , H01L27/10873 , H01L27/1108 , H01L27/1156 , H01L27/1225 , H01L29/24 , H01L29/41733 , H01L29/4908 , H01L29/495 , H01L29/517 , H01L29/7869
摘要： To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.
摘要翻译：为了提高包含氧化物半导体的晶体管的生产率，具有良好的电气特性。在包括氧化物半导体膜上的栅绝缘膜和栅电极的顶栅晶体管中，在氧化物半导体膜上形成金属膜，向金属膜中添加氧以形成金属氧化物膜，并且金属氧化物膜用作栅极绝缘膜。在氧化物半导体膜上形成氧化物绝缘膜之后，可以在氧化物绝缘膜上形成金属膜。向金属膜中添加氧以形成金属氧化物膜，并且还添加到氧化物半导体膜或氧化物绝缘膜。

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