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1. 发明申请

US20040259453A1 Method for manufacturing light emitting device 有权
标题翻译：发光装置的制造方法
公开(公告)号：US20040259453A1
公开(公告)日：2004-12-23
申请号：US10896028
申请日：2004-07-22
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan Corporation
发明人： Takeshi Fukunaga , Junya Maruyama
IPC分类号： H05B033/10
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L27/15 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3262 , H01L27/3295 , H01L29/78645 , H01L29/78669 , H01L51/0097 , H01L51/5206 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/525 , H01L51/5271 , H01L51/56 , H01L2251/5315 , Y10S428/917
摘要： To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.
摘要翻译：提供明亮高可靠的发光装置。在反射电极（101）上依次层叠形成阳极（102），EL层（103），阴极（104）和辅助电极（105）。此外，阳极（102），阴极（104）和辅助电极（105）相对于可见光辐射是透明的或半透明的。在这种结构中，EL层（103）中产生的光几乎全部被照射到阴极（104）的侧面，从而显着提高像素的效果发光面积。

2. 发明申请

US20040251461A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20040251461A1
公开(公告)日：2004-12-16
申请号：US10735710
申请日：2003-12-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Aya Anzai , Junya Maruyama
IPC分类号： H01L031/0376
CPC分类号： H01L27/1266 , G02F1/133305 , G02F2001/13613 , H01L27/1214 , H01L27/3244 , H01L51/0024 , H01L2251/5338 , Y10T428/31504
摘要： It is provided a contacting method when a plurality of films to be peeled are laminating. Reduction of total layout area, miniaturization of a module, weight reduction, thinning, narrowing a frame of a display device, or the like can be realized by sequentially laminating a plurality of films to be peeled which are once separately formed over a plastic film or the like. Moreover, reliable contact having high degree of freedom is realized by forming each layer having a connection face of a conductive material and by patterning with the use of a photomask having the same pattern.
摘要翻译：当要剥离的多个薄膜层叠时，提供接触方法。通过在塑料薄膜上依次层叠多个被剥离的薄膜，可以一次分开形成，可以实现总布局面积的减小，模块的小型化，减轻重量，变薄，缩小显示装置的框架等类似。此外，通过形成具有导电材料的连接面的各层，并通过使用具有相同图案的光掩模进行图案化，实现了高自由度的可靠接触。

3. 发明申请

US20040232413A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20040232413A1
公开(公告)日：2004-11-25
申请号：US10694803
申请日：2003-10-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L029/12 , H01L021/00
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： (Object) It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
摘要翻译：（对象）本发明的目的是提供一种不会对被剥离层造成损害的剥离方法，并且不仅允许以小的表面积剥离层，而且还可以使用剥离层大的表面积要完全剥离。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和制造方法（解决方法）当在基板上设置金属层11时，设置与金属层11接触的氧化物层12，形成被剥离层13，并且金属层11被照射激光束进行氧化并形成金属氧化物层16，通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面，可以进行明确的分离。

4. 发明申请

US20040087110A1 Peeling method 有权
标题翻译：剥皮方法
公开(公告)号：US20040087110A1
公开(公告)日：2004-05-06
申请号：US10619074
申请日：2003-07-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Takuya Tsurume , Hideaki Kuwabara
IPC分类号： H01L021/46 , H01L021/30
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214
摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410null C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.
摘要翻译：提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层高产。此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。在410℃以上进行用于扩散氢的热处理。结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

5. 发明申请

US20040164302A1 Thin film integrated circuit device IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container 有权
标题翻译：薄膜集成电路器件IC标签，包含薄膜集成电路的容器，薄膜集成电路器件的制造方法，容器的制造方法以及具有容器的产品的管理方法
公开(公告)号：US20040164302A1
公开(公告)日：2004-08-26
申请号：US10781795
申请日：2004-02-20
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuyuki Arai , Akira Ishikawa , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yuko Tachimura
IPC分类号： H01L029/04
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.
摘要翻译：本发明提供了一种超薄薄膜集成电路和包括薄膜集成电路器件的薄膜集成电路器件。因此，产品的设计不会被破坏，而由硅晶片形成的集成电路是厚的，并且在产品容器的表面上产生不规则性。根据本发明的薄膜集成电路不同于由常规硅晶片形成的集成电路，包括半导体膜作为有源区（例如，薄膜晶体管中的沟道区）。根据本发明的薄膜集成电路足够薄，即使当诸如卡或容器的产品配备有薄膜集成电路时，该设计也不会被破坏。

6. 发明申请

US20040132265A1 Separating method 有权
标题翻译：分离方法
公开(公告)号：US20040132265A1
公开(公告)日：2004-07-08
申请号：US10740437
申请日：2003-12-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Shunpei Yamazaki
IPC分类号： H01L021/46 , H01L021/30
CPC分类号： H01L27/1266 , H01L21/6835 , H01L27/1214 , H01L2221/68359 , H01L2221/68368 , H01L2924/3025
摘要： The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split.
摘要翻译：本发明是用于容易地分离大面积的全层释放层的分离方法。此外，本发明是在形成剥离层期间不受使用诸如基板的基板的限制的分离方法。一种分离方法，包括依次形成含有氢的金属膜，第一氧化物和半导体膜的步骤; 以及将载体接合到包含第一氧化物和半导体膜的剥离层，并且通过物理手段从与设置有金属层的基板分离结合到载体的剥离层。通过分离方法，进行热处理以扩散半导体膜中所含的氢，通过还原在金属膜和第一氧化物膜之间的表面边界处形成的第二氧化物和包含第二氧化物的膜形成第三氧化物氧化物和第三氧化物，含有第二氧化物的膜和第三氧化物的膜与金属膜之间的表面边界或含有第二氧化物的膜和第三氧化物之间的表面边界以及第一氧化物被分裂。

7. 发明申请

US20030217805A1 Method of transferring a laminate and method of manufacturig a semiconductor device 有权
标题翻译：转印层压体的方法和制造半导体器件的方法
公开(公告)号：US20030217805A1
公开(公告)日：2003-11-27
申请号：US10438854
申请日：2003-05-16
申请人： Semiconductor Energy Laboratory Co. , Ltd.
发明人： Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno
IPC分类号： B32B031/00
CPC分类号： H01L21/76251 , H01L21/2007 , H01L2221/68368 , Y10T428/14
摘要： An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer and an object to be peeled on a substrate; bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.
摘要翻译：本发明的目的是提供一种在短时间内将被剥离物转印到转印部件上而不会对层压体内被剥离对象造成损伤的方法。另外，本发明的另一个目的是提供一种半导体器件的制造方法，其中将制造在衬底上的半导体元件转移到通常为塑料衬底的转印构件上。该方法的特征在于包括：在基板上形成剥离层和待剥离物体; 通过双面胶带粘合要剥离的物体和支撑体; 通过使用物理方法剥离剥离层的物体，然后将被剥离物接合到转印体上; 并将支撑体和双面胶带从要剥离的物体上剥离。

8. 发明申请

US20020187575A1 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20020187575A1
公开(公告)日：2002-12-12
申请号：US10131435
申请日：2002-04-24
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junya Maruyama , Masahiro Takahashi
IPC分类号： H01L021/00
CPC分类号： H01L51/5259 , H01L27/3244 , H01L27/3295 , H01L51/524 , H01L51/5246 , H01L51/56
摘要： A technique for obtaining light emitting devices manufactured with high yield is provided. The width of a seal pattern (605b) can be kept thin by manufacturing a light emitting device using a second substrate (600a) which has a concave portion (607a) and a concave portion (608a). It therefore becomes possible to make the light emitting device have a narrow frame. In addition, the light emitting device with the narrow frame can be realized by a manufacturing method thereof in which a portion of the second substrate from the concave portion to an edge surface is cut.
摘要翻译：提供了用于获得以高产率制造的发光器件的技术。通过使用具有凹部（607a）和凹部（608a）的第二基板（600a）制造发光装置，可以使密封图案（605b）的宽度保持薄。因此，可以使发光装置具有窄的框架。此外，具有窄框架的发光装置可以通过其第二基板从凹部到边缘表面的一部分被切割的制造方法来实现。

9. 发明申请

US20020113549A1 Light emitting device, electronic equipment, and method of manufacturing thereof 有权
标题翻译：发光装置，电子设备及其制造方法
公开(公告)号：US20020113549A1
公开(公告)日：2002-08-22
申请号：US10077370
申请日：2002-02-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Junya Maruyama , Keiichi Ogura , Toru Takayama
IPC分类号： H01J001/62
CPC分类号： H01L51/5259 , H01L27/3244 , H01L51/524 , H01L51/5253
摘要： A highly reliable light-emitting device is provided in which an organic light-emitting device is not degraded by oxygen, moisture, and the like. The organic light-emitting device is press-fit in vacuum using a wrapping film (105) that is covered with a DLC film (or a silicon nitride film, an AlN film, a film of a compound expressed as AlNXOY) (106) containing Ar. The organic light-emitting device thus can be completely shut off from the outside, and moisture, oxygen, or other external substances that accelerate degradation of an organic light emitting layer can be prevented from entering the organic light-emitting device.
摘要翻译：提供了一种高度可靠的发光器件，其中有机发光器件不被氧气，水分等降解。使用被DLC膜（或氮化硅膜，AlN膜，AlNXOY化合物的膜）（106）覆盖的包裹膜（105）在有机发光装置中进行真空压配合（106） Ar。因此，可以将有机发光装置从外部完全切断，并且可以防止促进有机发光层劣化的水分，氧气或其它外部物质进入有机发光装置。

10. 发明申请

US20020000561A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20020000561A1
公开(公告)日：2002-01-03
申请号：US09892990
申请日：2001-06-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hirokazu Yamagata , Junya Maruyama
IPC分类号： H01L027/15 , H01L031/12 , H01L033/00
CPC分类号： H01L51/5262 , H01L27/3244 , H01L51/5281 , H01L51/5284
摘要： In a light-emitting device wherein a light shield portion is disposed in touch with a transparent electrode included in a pixel, the light shield portion (105 in FIG. 1) is disposed at the peripheral part of the transparent electrode (101), whereby that part of light (visible light) emitted in an EL layer (102) which escapes from the peripheral part of the transparent electrode (101) can be intercepted or reflected. Thus, the loss of the light emitted in the EL layer (102) and the leakage thereof to an adjacent pixel can be prevented, and the efficiency of deriving the light can be sharply heightened.
摘要翻译：在遮光部与透明电极（101）的周边部分配置在与透明电极（101）相连接的发光装置中，所述遮光部（图1的105）在从透明电极（101）的周边部分逸出的EL层（102）中发射的部分光（可见光）可能被截断或反射。因此，可以防止在EL层（102）中发射的光的损失和其相邻像素的泄漏，并且导出光的效率可以急剧增加。

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