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    • 10. 发明申请
    • Semiconductor device and its manufacturing method
    • 半导体器件及其制造方法
    • US20040256623A1
    • 2004-12-23
    • US10890129
    • 2004-07-14
    • Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
    • Shunpei Yamazaki
    • H01L029/04
    • H01L29/66757G02F1/1368H01L27/124H01L29/78621H01L29/78633H01L29/78645H01L29/78648
    • An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film. The pixel electrode can be overlapped with the first and second wirings so that an area of the pixel electrode can be increased in the display unit of a reflection type.
    • 本发明的目的是提供一种有源矩阵型显示单元,其具有像素结构,其中形成在扫描线(栅极线)和数据线的像素部分中的像素电极被适当地布置,并且实现了高数值孔径 而不增加掩码的数量和进程的数量。 在该显示单元中,通过第一绝缘膜在半导体膜和衬底之间布置的第一布线与该半导体膜重叠,并用作遮光膜。 此外,在半导体膜上形成用作栅极绝缘膜的第二绝缘膜。 在第二绝缘膜上形成栅电极和第二布线。 第一和第二布线通过第一和第二绝缘膜互相交叉。 在第二布线上形成第三绝缘膜作为层间绝缘膜,并且在该第三绝缘膜上形成像素电极。 像素电极可以与第一和第二布线重叠,使得可以在反射型显示单元中增加像素电极的面积。