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1. 发明申请

US20040263728A1 Liquid crystal display panel and method for manufacturing light reflecting film thereof 失效
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US20040263728A1
公开(公告)日：2004-12-30
申请号：US10895963
申请日：2004-07-22
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Takeshi Nishi
IPC分类号： G02F001/1335
CPC分类号： G02F1/133553 , G02F1/133504 , G02F1/13439 , G02F1/136227
摘要： A reflection type liquid crystal display panel is arranged such that between an active matrix substrate and an opposing substrate there are provided thin film transistors, interlayer insulating film, pixel electrodes, light reflecting films, orientation film, phase transition type guest/host liquid crystal, orientation film, opposing electrode, and color filter in this order. The pixel electrodes are disposed on the active matrix substrate in the form of a matrix with the interlayer insulating film interposed therebetween and also are respectively connected to the thin film transistors. The light reflecting films are each formed by the upper surface of the pixel electrode per se being made into a porous layer. The porous layer formed as the light reflecting film can make the light scattering large in amount and can also reflect the light in a desired direction by changing its pore size or depth. Therefore, the liquid crystal display panel can be applied as liquid crystal display panels for use in a wide range of electronic devices. That is, a liquid crystal display panel high in luminance can be provided by making the light reflecting film into a porous layer and making the light scattering large in amount.
摘要翻译：反射型液晶显示面板被布置成使得在有源矩阵基板和相对基板之间设置有薄膜晶体管，层间绝缘膜，像素电极，光反射膜，取向膜，相变型客体/主体液晶，取向膜，对置电极和滤色器。像素电极以夹着层间绝缘膜的矩阵形式设置在有源矩阵基板上，并且也分别连接到薄膜晶体管。光反射膜各自由像素电极本身的上表面形成为多孔层。形成为光反射膜的多孔层可以使光的散射量大，并且还可以通过改变其孔径或深度来反射所需方向的光。因此，液晶显示面板可以用作用于各种电子设备的液晶显示面板。也就是说，通过使光反射膜成为多孔层并使光散射量大，可以提供高亮度的液晶显示面板。

2. 发明申请

US20040257357A1 Electrooptical device and method of fabricating the same 有权
公开(公告)号：US20040257357A1
公开(公告)日：2004-12-23
申请号：US10891015
申请日：2004-07-15
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Shunpei Yamazaki , Jun Koyama , Takeshi Fukunaga
IPC分类号： G09G005/00
CPC分类号： G02F1/13454 , G02F1/133553 , G09G3/3648 , G09G2300/0408
摘要： There is disclosed an electrooptical device capable of achieving a large area display by making full use of the size of the substrate. An active matrix substrate acts as a driver portion for the reflection-type electrooptical device. A pixel matrix circuit and logic circuitry are formed on the active matrix substrate. At this time, the logic circuitry is disposed, by making use of a dead space in the pixel matrix circuit. The area occupied by the pixel matrix circuit, or image display region, can be enlarged without being limited by the area occupied by the logic circuitry.

3. 发明申请

US20040257356A1 Drive circuit, display device using the drive circuit and electronic apparatus using the display device 失效
标题翻译：驱动电路，使用驱动电路的显示装置和使用显示装置的电子装置
公开(公告)号：US20040257356A1
公开(公告)日：2004-12-23
申请号：US10885881
申请日：2004-07-08
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan Corporation
发明人： Jun Koyama
IPC分类号： G09G005/00
CPC分类号： G09G3/3283 , G09G3/3241 , G09G2300/0417 , G09G2300/0426 , G09G2300/0465 , G09G2300/0809 , G09G2300/0842 , G09G2300/0861 , G09G2310/0227 , G09G2310/027 , G09G2310/0297 , G09G2320/02 , G09G2320/0233 , G09G2330/021 , H01L27/3244
摘要： The currents that m pieces of quasi control current output circuits formed with a polycrystalline TFT output have the dispersion. In the present invention, the averaged value of the output currents of these m pieces of the quasi control current output circuits is outputted from the output terminals of n (n represents a natural number of m or less) of the control current output circuit. For example, the output currents of these m pieces of the quasi control current output circuits are in turn exchanged and outputted from the n (n represents a natural number of m or less) pieces of the output terminals of the control current output circuits. Thus, the drive circuit, which has suppressed the dispersion of the output current, can be provided.
摘要翻译：由多晶TFT输出形成的m个准控制电流输出电路的电流具有分散。在本发明中，这些m个准控制电流输出电路的输出电流的平均值从控制电流输出电路的n（n表示自然数m以下）的输出端子输出。例如，这些m个准控制电流输出电路的输出电流依次从控制电流输出电路的输出端的n（n表示m个或更少个）的输出端子的n（n表示）自然数交换输出。因此，可以提供抑制输出电流的分散的驱动电路。

4. 发明申请

US20040256623A1 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20040256623A1
公开(公告)日：2004-12-23
申请号：US10890129
申请日：2004-07-14
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Shunpei Yamazaki
IPC分类号： H01L029/04
CPC分类号： H01L29/66757 , G02F1/1368 , H01L27/124 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L29/78648
摘要： An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film. The pixel electrode can be overlapped with the first and second wirings so that an area of the pixel electrode can be increased in the display unit of a reflection type.
摘要翻译：本发明的目的是提供一种有源矩阵型显示单元，其具有像素结构，其中形成在扫描线（栅极线）和数据线的像素部分中的像素电极被适当地布置，并且实现了高数值孔径而不增加掩码的数量和进程的数量。在该显示单元中，通过第一绝缘膜在半导体膜和衬底之间布置的第一布线与该半导体膜重叠，并用作遮光膜。此外，在半导体膜上形成用作栅极绝缘膜的第二绝缘膜。在第二绝缘膜上形成栅电极和第二布线。第一和第二布线通过第一和第二绝缘膜互相交叉。在第二布线上形成第三绝缘膜作为层间绝缘膜，并且在该第三绝缘膜上形成像素电极。像素电极可以与第一和第二布线重叠，使得可以在反射型显示单元中增加像素电极的面积。

5. 发明申请

US20040239599A1 Light emitting device and method of driving the same 有权
标题翻译：发光装置及其驱动方法
公开(公告)号：US20040239599A1
公开(公告)日：2004-12-02
申请号：US10882287
申请日：2004-07-02
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Jun Koyama
IPC分类号： G09G003/30
CPC分类号： G09G3/3233 , G09G3/2022 , G09G3/325 , G09G3/3266 , G09G3/3283 , G09G2300/0426 , G09G2300/0842 , G09G2300/0861 , G09G2320/0266 , G09G2320/041
摘要： A method of driving a display device capable of obtaining a luminance of constant level irrespective of temperature change is provided. A change in luminance of an EL element due to temperature change is prevented by controlling the luminance of the EL element with current instead of voltage. Specifically, a TFT for controlling the amount of current flowing into the EL element is operated in a saturation range. Then a current value IDS of the TFT is hardly changed by VDS but is determined solely by VGS. Accordingly, the amount of current flowing in the EL element is kept constant by setting VGS to such a value as to make the current value IDS constant. The luminance of the EL element is substantially in proportion to the amount of current flowing through the EL element, and a change in luminance of the EL element upon temperature change can thus be prevented.
摘要翻译：提供一种无论温度变化如何，能够获得能够获得恒定水平的亮度的显示装置的方法。通过用电流代替电压来控制EL元件的亮度来防止由温度变化导致的EL元件的亮度变化。具体地说，用于控制流入EL元件的电流量的TFT在饱和范围内工作。那么TFT的电流值IDS几乎不被VDS改变，而仅由VGS确定。因此，通过将VGS设定为使电流值IDS恒定的值，使EL元件中流动的电流量保持恒定。 EL元件的亮度基本上与流过EL元件的电流量成比例，因此可以防止EL元件在温度变化时的亮度变化。

6. 发明申请

US20040217928A1 Adhesion type area sensor and display device having adhesion type area sensor 有权
公开(公告)号：US20040217928A1
公开(公告)日：2004-11-04
申请号：US10858445
申请日：2004-06-02
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： G09G003/30
CPC分类号： H01L31/14 , H01L27/14678 , H01L27/30 , H01L27/3234 , H01L27/3244 , H04N3/155 , H04N5/374
摘要： A lightweight, thin, small size adhesion type area sensor is provided. A pixel of the area sensor has an EL element as a light source, and a photodiode as a photoelectric conversion element. A TFT is used with the adhesion type area sensor for controlling the operation of the EL element and the photodiode.

7. 发明申请

US20040217778A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20040217778A1
公开(公告)日：2004-11-04
申请号：US10856799
申请日：2004-06-01
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Hiroyuki Miyake
IPC分类号： H03K019/094
CPC分类号： G09G3/3677 , G09G3/3688 , G09G2310/0267 , G09G2310/027 , H01L27/3244
摘要： When a digital video signal inputted to a latch circuit is Hi electric potential, undesirably a current flows continuously for one horizontal period at maximum, and this causes a great increase in power consumption of a semiconductor device. Therefore an object of the present invention is to provide a display device in which power consumption can be reduced by minimizing occurrence of the current path during the circuit operation, as well as a driving method. The present invention provides a semiconductor device in which two outputs, a non-inverted output and an inverted output, are obtained when a digital video signal is inputted and therefore occurrence of the current path can be minimized in a downstream buffer driven by these signals. Furthermore, a semiconductor device with reduced power consumption is provided by using the structure described above.
摘要翻译：当输入到锁存电路的数字视频信号为高电位时，电流不连续地流过一个水平周期的最大值，这导致半导体器件的功耗大幅增加。因此，本发明的目的是提供一种显示装置，其中可以通过最小化电路操作期间的电流路径的发生以及驱动方法来降低功耗。本发明提供一种半导体器件，其中当输入数字视频信号时获得两个输出，非反相输出和反相输出，因此在由这些信号驱动的下游缓冲器中可以最小化电流路径的出现。此外，通过使用上述结构来提供功耗降低的半导体器件。

8. 发明申请

US20040216677A1 Film formation apparatus and film formation method 有权
标题翻译：成膜装置及成膜方法
公开(公告)号：US20040216677A1
公开(公告)日：2004-11-04
申请号：US10854730
申请日：2004-05-27
申请人： Semiconductor Energy Laboratory Co., Ltd, a Japan corporation
发明人： Shunpei Yamazaki , Toshimitsu Konuma , Takeshi Nishi
IPC分类号： C23C016/00
CPC分类号： C23C14/12 , C23C14/228 , C23C14/24 , C23C14/564 , C23C14/568 , H01L51/0002 , H01L51/0025 , H01L51/0065 , H01L51/0081 , H01L51/0089 , H01L51/56 , H05B33/10
摘要： There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.

9. 发明申请

US20040206958A1 Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same 失效
标题翻译：半导体薄膜及其制造方法以及半导体装置及其制造方法
公开(公告)号：US20040206958A1
公开(公告)日：2004-10-21
申请号：US10843613
申请日：2004-05-12
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Shunpei Yamazaki , Jun Koyama , Akiharu Miyanaga , Takeshi Fukunaga
IPC分类号： H01L031/036 , H01L021/84
CPC分类号： H01L21/02672 , G02B27/017 , G02B2027/0138 , H01L21/02532 , H01L21/2022 , H01L21/8221 , H01L27/1277 , H01L29/045 , H01L29/665 , H01L29/66757 , H01L29/78621 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.
摘要翻译：薄膜半导体晶体管结构具有具有电介质表面的基板和由半导体薄膜制成的有源层，其表现出与单晶相当的结晶度。为了制造晶体管，在衬底上形成半导体薄膜，该薄膜包括可以是基本上平行于衬底的柱状晶体和/或毛细晶体的多个晶体的混合物。然后在所选择的含有卤素的气氛中对所得结构进行热氧化，从而去除膜中所含的任何金属元素。这可以形成单畴区域，其中单个柱状或毛细晶体晶体与任何相邻的晶体接触，并且其能够基本上被认为是单晶区域，而不存在或包含任何晶粒边界。该区域用于形成晶体管的有源层。

10. 发明申请

US20040179164A1 Liquid-crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20040179164A1
公开(公告)日：2004-09-16
申请号：US10811920
申请日：2004-03-30
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
发明人： Hongyong Zhang
IPC分类号： G02F001/1345
CPC分类号： G02F1/136286 , G02F1/1339 , G02F1/13454
摘要： The present invention related to unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings 301 for the first layer which are not electrically connected are formed in regions R1 and R2, and wirings 302 extending from the pixel section are formed in a region R3, and wirings 303 having connection end portions 303a are formed in a region R4. After an interlayer insulation film is formed on those surface, the starting film of the signal lines is patterned so that the dummy wirings 304 for the second layer are formed to embed the gaps between the wirings 301 to 303, and also the wirings 305 and the wirings 303 which extend from the pixel portion are connected to each other. As a result, the cross-sectional structure along the line A-Anull of the sealing material formation region 107 can be unified.
摘要翻译：本发明涉及密封材料的均匀化步骤，使得液晶显示装置的成品率和可靠性变高。扫描线的起始膜被图案化，使得在区域R1和R2中形成不电连接的第一层的棱形虚拟布线301，并且从像素部分延伸的布线302形成在区域R3中，并且布线303具有连接端部303a形成在区域R4中。在这些表面上形成层间绝缘膜之后，对信号线的起始膜进行构图，以形成用于第二层的虚拟布线304，以将布线301至303之间的间隙以及布线305和从像素部延伸的布线303彼此连接。结果，可以将沿着密封材料形成区域107的线A-A'的横截面结构统一起来。

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