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1. 发明授权

US5685907A Apparatus for preparing compound single crystals 失效
标题翻译：复合单晶制备装置
公开(公告)号：US5685907A
公开(公告)日：1997-11-11
申请号：US586825
申请日：1996-01-31
申请人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Kazuya Suzuki , Hiroshi Okada , Takao Kawanaka , Seiichiro Ohmoto
发明人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Kazuya Suzuki , Hiroshi Okada , Takao Kawanaka , Seiichiro Ohmoto
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/00 , C30B29/48 , Y10T117/102
摘要： A method and apparatus for the preparation of single crystals of group II-VI compounds such as ZnSe and CdTe and group III-V compounds such as InP and GaP or of ternary compounds thereof, from which some of their components are likely to be dissociated and evaporated during crystal growth at high temperatures. Single crystals are prepared which enable the preparation of high quality compound single crystals and prevent the contamination of furnace structures. The method includes melting a source material in a container by heating in a furnace body and solidifying the melt by cooling from the bottom to grow a single crystal. The container is enclosed by an airtight chamber communicating to the outside with a pressure equalizing passage. Heating is performed while the passage is held at a low temperature equal to or lower than the melting point of a high-dissociation-pressure component of the source material. The apparatus includes a container for holding the source material, a hermetical furnace body including a heater to heat the container, an airtight chamber inside the heater which encloses the container and a pressure equalizing passage communicating with the airtight chamber and forming a lower portion of the chamber.
摘要翻译： PCT No.PCT / JP95 / 01069 Sec。 371日期1996年1月31日 102（e）日期1996年1月31日PCT归档1995年6月1日PCT公布。 WO95 / 33873 PCT出版物日期：1995年12月14日一种用于制备诸如ZnSe和CdTe的II-VI族化合物的单晶和InP和GaP的III-V族化合物或其三元化合物的方法和装置，其一些组分为在高温下晶体生长期间可能会被解离和蒸发。制备单晶，其可制备高质量的复合单晶并防止炉结构的污染。该方法包括通过在炉体中加热熔化容器中的源材料并通过从底部冷却来固化熔体以生长单晶。容器由与压力平衡通道连通的气密室封闭。当通道保持在等于或低于源材料的高解离压分量的熔点的低温时进行加热。该装置包括用于保持源材料的容器，包括用于加热容器的加热器的密封炉体，包围容器的加热器内的气密室和与气密室连通的压力平衡通道，并形成房间。

2. 发明授权

US5679151A Method for growing single crystal 失效
标题翻译：生长单晶的方法
公开(公告)号：US5679151A
公开(公告)日：1997-10-21
申请号：US604663
申请日：1996-02-21
申请人： Seiichiro Ohmoto , Katsuhiro Uehara , Hiroshi Okada , Yoshihiko Sakashita , Takao Kawanaka
发明人： Seiichiro Ohmoto , Katsuhiro Uehara , Hiroshi Okada , Yoshihiko Sakashita , Takao Kawanaka
IPC分类号： C30B11/00 , C30B15/00 , C30B11/12
CPC分类号： C30B11/00 , C30B15/00 , C30B29/48 , Y10T117/1016 , Y10T117/1024
摘要： Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts. After the growth of the crystal, the assembled parts are moved substantially horizontally outwardly so that the parts are separated from each other.
摘要翻译：形成ZnSe单晶的方法。物料装入容器中。材料的充电被熔化以产生材料熔体。从材料的熔体中生长单晶。然后，将生长的晶体与容器的壁表面脱离接触。晶体的温度在其相变温度范围内变化，同时建立从生长晶体的一端到另一端的温度梯度。使用包括容器和升降构件的结晶器进行该方法。容器设置在高压容器内。容器向下逐渐变细并且设有从其下端延伸的孔。升降构件从下方插入孔中，将生长的晶体向上推入坩埚中。容器由多个可分离部分组成。在晶体生长之后，组装的部件基本上水平地向外移动，使得部件彼此分离。

3. 发明授权

US07758974B2 Hard film 有权
标题翻译：硬片
公开(公告)号：US07758974B2
公开(公告)日：2010-07-20
申请号：US11844846
申请日：2007-08-24
申请人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
发明人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
IPC分类号： B32B9/00
CPC分类号： C04B35/584 , C04B2235/402 , C04B2235/404 , C04B2235/96 , C23C14/0635 , C23C14/0641 , C23C14/0664 , C23C28/044 , C23C28/048 , C23C28/42 , C23C30/00 , Y10T428/24942
摘要： A hard film formed of a material containing a (M1−xSix)(C1−dNd) compound, wherein M is at least one of A1 and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, wherein x, 1−x, d and 1−d are atomic ratios of Si, M, N and C, respectively.
摘要翻译：由含有（M1-xSix）（C1-dNd）化合物的材料形成的硬膜，其中M是A1和3A，4A，5A和6A中的元素中的至少一种，0.45和n1E; x＆lt; lE; 0.98和0＆ ; d＆nlE; 1，其中x，1-x，d和1-d分别是Si，M，N和C的原子比。

4. 发明申请

US20080003459A1 HARD FILM 有权
标题翻译：硬膜
公开(公告)号：US20080003459A1
公开(公告)日：2008-01-03
申请号：US11844846
申请日：2007-08-24
申请人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
发明人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
IPC分类号： B32B9/00
CPC分类号： C04B35/584 , C04B2235/402 , C04B2235/404 , C04B2235/96 , C23C14/0635 , C23C14/0641 , C23C14/0664 , C23C28/044 , C23C28/048 , C23C28/42 , C23C30/00 , Y10T428/24942
摘要： A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, wherein x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.
摘要翻译：由含有（M 1-x-Si x Si）（C 1-x N d）的材料形成的硬膜，其中M是Al中的至少一种和3A，4A，5A和6A族中的元素，0.45 <= x <= 0.98和0 <= d <= 1，其中x，1-x，d 和1-d分别是Si，M，N和C的原子比。

5. 发明授权

US07294416B2 Hard film 有权
标题翻译：硬片
公开(公告)号：US07294416B2
公开(公告)日：2007-11-13
申请号：US10807332
申请日：2004-03-24
申请人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
发明人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
IPC分类号： B32B9/00
CPC分类号： C04B35/584 , C04B2235/402 , C04B2235/404 , C04B2235/96 , C23C14/0635 , C23C14/0641 , C23C14/0664 , C23C28/044 , C23C28/048 , C23C28/42 , C23C30/00 , Y10T428/24942
摘要： A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, where x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.
摘要翻译：由含有（M 1-x-Si x Si）（C 1-x N d）的材料形成的硬膜，其中M是Al中的至少一种和3A，4A，5A和6A族中的元素，0.45 <= x <= 0.98和0 <= d <= 1，其中x，1-x，d 和1-d分别是Si，M，N和C的原子比。

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