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    • 4. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE
    • 半导体存储器件
    • US20100265769A1
    • 2010-10-21
    • US12823726
    • 2010-06-25
    • SOON WOOK HWANGKi Tae ParkYeong Taek Lee
    • SOON WOOK HWANGKi Tae ParkYeong Taek Lee
    • G11C16/04
    • G11C16/08G11C7/227G11C16/0483
    • An electrically erasable programmable non-volatile semiconductor memory device. The semiconductor memory device includes a memory cell array comprising a plurality of memory blocks, each memory block comprising a plurality of memory cells, a dummy memory cell, and a select gate transistor. Transfer transistors each having a current path connected between a corresponding wordline enable signal line and a corresponding wordline are controlled by an output of a block selection circuit. The transfer transistors include a dummy transfer transistor electrically coupled to the dummy memory cell, and configured to transmit a dummy wordline enable signal.
    • 电可擦除可编程非易失性半导体存储器件。 半导体存储器件包括存储单元阵列,其包括多个存储块,每个存储块包括多个存储器单元,一个虚拟存储单元和一个选择栅极晶体管。 每个具有连接在对应的字线使能信号线和相应的字线之间的电流路径的传输晶体管由块选择电路的输出控制。 转移晶体管包括电耦合到虚拟存储器单元的虚拟转移晶体管,并且被配置为发送伪字线使能信号。
    • 5. 发明申请
    • MULTILAYERED NONVOLATILE MEMORY WITH ADAPTIVE CONTROL
    • 具有自适应控制的多层非易失性存储器
    • US20090273977A1
    • 2009-11-05
    • US12472033
    • 2009-05-26
    • Doo Gon KimKi Tae ParkMyoung Gon Kang
    • Doo Gon KimKi Tae ParkMyoung Gon Kang
    • G11C16/04G11C16/06
    • G11C11/5621G11C16/10G11C16/30G11C16/3454
    • A method and device for adaptive control of multilayered nonvolatile semiconductor memory are provided, the device including memory cells organized into groups and a control circuit having a look-up matrix for providing control parameters for each of the groups, where characteristics of each group are stored in the look-up matrix, and the control parameters for each group are responsive to the stored characteristics for that group; the method including organizing memory cells into groups, storing characteristics for each group in a look-up matrix, providing control parameters for each of the groups, where the control parameters for each group are responsive to its stored characteristics, and driving each memory cell in accordance with its provided control parameters.
    • 提供了一种用于多层非易失性半导体存储器的自适应控制的方法和装置,该装置包括组织成组的存储单元和具有查找矩阵的控制电路,用于为存储每个组的特性的组中的每个组提供控制参数 在查找矩阵中,并且每个组的控制参数响应于该组的存储特性; 所述方法包括将存储器单元组合成组,将查找矩阵中的每个组存储特性,为每个组提供控制参数,其中每个组的控制参数响应于其存储的特性,以及驱动每个存储单元 根据其提供的控制参数。