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    • 1. 发明授权
    • Method of fabricating a ferroelectric memory cell
    • 制造铁电存储单元的方法
    • US06548343B1
    • 2003-04-15
    • US09702985
    • 2000-10-31
    • Scott R. SummerfeltTheodore S. MoiseGuoqiang XingLuigi ColomboTomoyuki SakodaStephen R. GilbertAlvin L. S. LokeShawming MaRahim KavariLaura Wills-MirkarimiJun Amano
    • Scott R. SummerfeltTheodore S. MoiseGuoqiang XingLuigi ColomboTomoyuki SakodaStephen R. GilbertAlvin L. S. LokeShawming MaRahim KavariLaura Wills-MirkarimiJun Amano
    • H01L218242
    • H01L27/11502H01L27/11507H01L28/57
    • An embodiment of the instant invention is a method of fabricating a ferroelectric capacitor which is situated over a structure, the method comprising the steps of: forming a bottom electrode on the structure (124 of FIG. 1), the bottom electrode having a top surface and sides; forming a capacitor dielectric (126 of FIG. 1) comprised of a ferroelectric material on the bottom electrode, the capacitor dielectric having a top surface and sides; forming a top electrode (128 and 130 of FIG. 1) on the capacitor dielectric, the top electrode having a top surface and sides, the ferroelectric capacitor is comprised of the bottom electrode, the capacitor dielectric, and the top electrode; forming a barrier layer (118 and 120 of FIG. 1) on the side of the bottom electrode, the side of the capacitor dielectric, and the side of the top electrode; forming a dielectric layer on the barrier layer and the structure, the dielectric having a top surface and a bottom surface; and performing a thermal step for a duration at a temperature between 400 and 900 C. in an ambient comprised of a gas selected from the group consisting of: argon, nitrogen, and a combination thereof, the step of performing a thermal step being performed after the step of forming the barrier layer.
    • 本发明的一个实施例是制造位于结构上方的铁电电容器的方法,所述方法包括以下步骤:在所述结构(图1的124)上形成底电极,所述底电极具有顶表面 和边; 在底部电极上形成由铁电材料构成的电容器电介质(图1的126),电容器电介质具有顶表面和侧面; 在电容器电介质上形成顶电极(图1的128和130),顶电极具有顶表面和侧面,铁电电容器由底电极,电容器电介质和顶电极组成; 在底电极侧,电容器电介质侧和顶电极侧形成阻挡层(图1的118和120); 在所述阻挡层和所述结构上形成电介质层,所述电介质具有顶表面和底表面; 并且在由选自氩,氮及其组合的气体组成的环境中在400-900℃的温度下进行热步骤,所述环境包括:在步骤 形成阻挡层的步骤。