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1. 发明授权

US6066506A TFT, method of making and matrix displays incorporating the TFT 失效
标题翻译： TFT，制造方法和结合了TFT的矩阵显示器
公开(公告)号：US6066506A
公开(公告)日：2000-05-23
申请号：US195382
申请日：1998-11-18
申请人： Scott H. Holmberg , Ronald L. Huff
发明人： Scott H. Holmberg , Ronald L. Huff
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/417 , H01L29/49 , H01L29/786 , H01L21/00
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/4908 , G02F1/136213 , G02F1/136286 , G02F2001/136268
摘要： Improved thin film transistors to reduce defects in the devices incorporating the transistors, including active matrix displays. A first improvement is accomplished by forming a dual insulator layer over the bottom metal layer, which can be the gate line and also the row line in an active matrix display. The first insulator layer is formed by anodizing the metal layer and the second insulator layer is deposited onto the first layer. The dual insulator structure layer can be reanodized to eliminate the effect of pinholes. A second improvement includes providing an interdigitated transistor structure to increase the channel width, minimize internal shorting and minimize the drain capacitance. The interdigitated structure includes at least one source or drain finger formed between at least two drain or source fingers, respectively. A shorted source finger can be disconnected to maintain an operative transistor. A further improvement is provided when forming an active matrix display storage capacitor utilizing the dual insulator layer. A redundant column line can be formed utilizing a second overlying metal layer. A defect masking transistor also can be coupled from each pixel to the previous gate or row line.
摘要翻译：改进的薄膜晶体管，以减少并入晶体管的器件中的缺陷，包括有源矩阵显示器。第一个改进是通过在底部金属层上形成双重绝缘体层来完成的，其可以是有源矩阵显示器中的栅极线和行线。第一绝缘体层通过阳极化金属层而形成，并且第二绝缘体层沉积在第一层上。可以对双重绝缘体结构层进行重新定型以消除针孔的影响。第二改进包括提供交叉晶体管结构以增加沟道宽度，最小化内部短路并使漏极电容最小化。叉指结构包括分别形成在至少两个漏极或源极之间的至少一个源极或漏极指状物。可以断开短路的源极指以保持有效的晶体管。当利用双绝缘体层形成有源矩阵显示存储电容器时，提供进一步的改进。可以利用第二上覆金属层形成冗余列线。缺陷掩蔽晶体管也可以从每个像素耦合到先前的栅极或行线。

2. 发明授权

US5737041A TFT, method of making and matrix displays incorporating the TFT 失效
公开(公告)号：US5737041A
公开(公告)日：1998-04-07
申请号：US497371
申请日：1995-07-31
申请人： Scott H. Holmberg , Ronald L. Huff
发明人： Scott H. Holmberg , Ronald L. Huff
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/417 , H01L29/49 , H01L29/786 , G09G3/36
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/4908 , G02F1/136213 , G02F1/136286 , G02F2001/136268
摘要： Improved thin film transistors to reduce defects in the devices incorporating the transistors, including active matrix displays. A first improvement is accomplished by forming a dual insulator layer over the bottom metal layer, which can be the gate line and also the row line in an active matrix display. The first insulator layer is formed by anodizing the metal layer and the second insulator layer is deposited onto the first layer. The dual insulator structure layer can be reanodized to eliminate the effect of pinholes. A second improvement includes providing an interdigitated transistor structure to increase the channel width, minimize internal shorting and minimize the drain capacitance. The interdigitated structure includes at least one source or drain finger formed between at least two drain or source fingers, respectively. A shorted source finger can be disconnected to maintain an operative transistor. A further improvement is provided when forming an active matrix display storage capacitor utilizing the dual insulator layer. A redundant column line can be formed utilizing a second overlying metal layer. A defect masking transistor also can be coupled from each pixel to the previous gate or row line.

3. 发明授权

US5874746A TFT, method of making and matrix displays incorporating the TFT 失效
公开(公告)号：US5874746A
公开(公告)日：1999-02-23
申请号：US13798
申请日：1998-01-26
申请人： Scott H. Holmberg , Ronald L. Huff
发明人： Scott H. Holmberg , Ronald L. Huff
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/417 , H01L29/49 , H01L29/786 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/4908 , G02F1/136213 , G02F1/136286 , G02F2001/136268
摘要： Improved thin film transistors to reduce defects in the devices incorporating the transistors, including active matrix displays. A first improvement is accomplished by forming a dual insulator layer over the bottom metal layer, which can be the gate line and also the row line in an active matrix display. The first insulator layer is formed by anodizing the metal layer and the second insulator layer is deposited onto the first layer. The dual insulator structure layer can be reanodized to eliminate the effect of pinholes. A second improvement includes providing an interdigitated transistor structure to increase the channel width, minimize internal shorting and minimize the drain capacitance. The interdigitated structure includes at least one source or drain finger formed between at least two drain or source fingers, respectively. A shorted source finger can be disconnected to maintain an operative transistor. A further improvement is provided when forming an active matrix display storage capacitor utilizing the dual insulator layer. A redundant column line can be formed utilizing a second overlying metal layer. A defect masking transistor also can be coupled from each pixel to the previous gate or row line.

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