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1. 发明申请

US20110244251A1 Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的方法
公开(公告)号：US20110244251A1
公开(公告)日：2011-10-06
申请号：US12750056
申请日：2010-03-30
申请人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton , Robert Dwayne Gossman , Mehran Sadeghi
发明人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton , Robert Dwayne Gossman , Mehran Sadeghi
IPC分类号： B32B17/06 , C23C14/34 , H01L31/18
CPC分类号： C23C14/086 , C23C14/34 , C23C14/5806 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02491 , H01L21/02502 , H01L21/02557 , H01L21/02631 , H01L31/073 , H01L31/1836 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device.
摘要翻译：通常提供用于在基底上形成导电氧化物层的方法。在一个具体实施方案中，该方法可以包括在约10℃至约100℃的溅射温度下在衬底上溅射透明导电氧化物层。包含硫化镉的覆盖层可以直接沉积在透明导电氧化物层。透明导电氧化物层可以在约450℃至约650℃的退火温度下退火。通常还提供用于制造碲化镉基薄膜光伏器件的方法。通常还提供中间基板用于制造薄膜光伏器件。

2. 发明申请

US20110244620A1 Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的方法
公开(公告)号：US20110244620A1
公开(公告)日：2011-10-06
申请号：US12750096
申请日：2010-03-30
申请人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton
发明人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton
IPC分类号： H01L31/0272 , C23C14/34
CPC分类号： H01L31/022466 , H01L31/0488 , H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543
摘要： Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.
摘要翻译：通常提供用于在基底上形成导电氧化物层的方法。在一个具体实施方案中，该方法可以包括在约50℃至约250℃的溅射温度下在衬底上溅射透明导电氧化物层，并且在约450°的退火温度下退火该透明导电氧化物层通常提供制造碲化镉基薄膜光伏器件的方法。

3. 发明授权

US08257561B2 Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的方法
公开(公告)号：US08257561B2
公开(公告)日：2012-09-04
申请号：US12750056
申请日：2010-03-30
申请人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton , Robert Dwayne Gossman , Mehran Sadeghi
发明人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton , Robert Dwayne Gossman , Mehran Sadeghi
IPC分类号： C23C14/34
CPC分类号： C23C14/086 , C23C14/34 , C23C14/5806 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02491 , H01L21/02502 , H01L21/02557 , H01L21/02631 , H01L31/073 , H01L31/1836 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device.
摘要翻译：通常提供用于在基底上形成导电氧化物层的方法。在一个具体实施方案中，该方法可以包括在约10℃至约100℃的溅射温度下在衬底上溅射透明导电氧化物层。包含硫化镉的覆盖层可以直接沉积在透明导电氧化物层。透明导电氧化物层可以在约450℃至约650℃的退火温度下退火。通常还提供用于制造碲化镉基薄膜光伏器件的方法。通常还提供中间基板用于制造薄膜光伏器件。

4. 发明授权

US08053350B2 Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的方法
公开(公告)号：US08053350B2
公开(公告)日：2011-11-08
申请号：US12750096
申请日：2010-03-30
申请人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton
发明人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton
IPC分类号： H01L21/44
CPC分类号： H01L31/022466 , H01L31/0488 , H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543
摘要： Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.
摘要翻译：通常提供用于在基底上形成导电氧化物层的方法。在一个具体实施方案中，该方法可以包括在约50℃至约250℃的溅射温度下在衬底上溅射透明导电氧化物层，并且在约450°的退火温度下退火该透明导电氧化物层通常提供制造碲化镉基薄膜光伏器件的方法。

5. 发明申请

US20140024172A1 VAPOR DEPOSITION APPARATUS FOR CONTINUOUS DEPOSITION AND TREATMENT OF A THIN FILM LAYER ON A SUBSTRATE 审中-公开
标题翻译：用于连续沉积和处理基底上薄膜层的蒸气沉积装置
公开(公告)号：US20140024172A1
公开(公告)日：2014-01-23
申请号：US13554423
申请日：2012-07-20
申请人： Christopher Rathweg , Scott Daniel Feldman-Peabody
发明人： Christopher Rathweg , Scott Daniel Feldman-Peabody
IPC分类号： H01L21/363
CPC分类号： H01L21/02562 , C23C14/0629 , C23C14/56 , C23C14/5806 , H01L21/0262
摘要： Apparatus and method for vapor deposition of a sublimated source material are generally provided. The apparatus includes a deposition head with a first sublimation compartment and a second sublimation compartment, each configured for receipt and sublimation of a source material. A first distribution plate can be positioned at a first defined distance above a horizontal conveyance plane of an upper surface of substrates conveyed through a first deposition area of the apparatus, and a second distribution plate can be positioned at a second defined distance above a horizontal conveyance plane of an upper surface of substrates conveyed through a second deposition area of said apparatus. The first sublimation compartment and the second sublimation compartment can be isolated from each other such that the sublimated first source material is substantially prevented from mixing with the sublimated second source material, at least during sublimation.
摘要翻译：通常提供用于升华的源材料的气相沉积的装置和方法。该装置包括具有第一升华室和第二升华室的沉积头，每个升华室被构造成用于接收和升华源材料。第一分配板可以位于通过设备的第一沉积区域输送的基板的上表面的水平输送平面上方的第一限定距离处，并且第二分配板可以位于水平输送器上方的第二限定距离处通过所述设备的第二沉积区域输送的衬底的上表面的平面。至少在升华期间，第一升华室和第二升华室可彼此隔离，使得基本上防止升华的第一源材料与升华的第二源材料混合。

6. 发明申请

US20130230944A1 DOPING AN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE VIA DIFFUSION FROM A WINDOW LAYER 有权
标题翻译：通过窗户分散的光伏器件吸收绝缘层
公开(公告)号：US20130230944A1
公开(公告)日：2013-09-05
申请号：US13410516
申请日：2012-03-02
申请人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
发明人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
IPC分类号： H01L31/0352
CPC分类号： H01L31/0288 , H01L31/0203 , H01L31/022483 , H01L31/02963 , H01L31/0445 , H01L31/073 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/543
摘要： Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).
摘要翻译：提供了在薄膜光伏器件中掺杂p-n异质结的吸收层的方法。该方法可以包括在透明衬底上沉积窗口层，其中窗口层包括至少一种掺杂剂（例如铜）。可以在窗口层上形成p-n异质结，其中p-n异质结在吸收层中包括光电材料（例如碲化镉）。掺杂剂然后可以从窗口层扩散到吸收层（例如，通过退火）。

7. 发明授权

US08460765B2 Methods for forming selectively deposited thin films 有权
标题翻译：用于形成选择性沉积的薄膜的方法
公开(公告)号：US08460765B2
公开(公告)日：2013-06-11
申请号：US12825815
申请日：2010-06-29
申请人： Scott Daniel Feldman-Peabody
发明人： Scott Daniel Feldman-Peabody
IPC分类号： C23C16/48 , C23C16/04
CPC分类号： C23C16/047 , H01L31/022425 , H01L31/0465 , H01L31/073 , Y02E10/543
摘要： A method for selectively depositing a thin film structure on a substrate is provided. The method includes providing a process gas to a surface of the substrate and directing concentrated electromagnetic energy from a source of energy to at least a portion of the surface. The process gas is decomposed onto the substrate to form a selectively deposited thin film structure.
摘要翻译：提供了一种在衬底上选择性地沉积薄膜结构的方法。该方法包括将工艺气体提供到衬底的表面并且将集中的电磁能量从能量源引导到表面的至少一部分。工艺气体分解到衬底上以形成选择性淀积的薄膜结构。

8. 发明授权

US08430966B2 Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate 有权
标题翻译：气相沉积装置和用于在基底上连续沉积薄膜层的方法
公开(公告)号：US08430966B2
公开(公告)日：2013-04-30
申请号：US12639053
申请日：2009-12-16
申请人： Christopher Rathweg , Max William Reed , Mark Jeffrey Pavol , Scott Daniel Feldman-Peabody , Russell Weldon Black
发明人： Christopher Rathweg , Max William Reed , Mark Jeffrey Pavol , Scott Daniel Feldman-Peabody , Russell Weldon Black
IPC分类号： H01L21/20 , H01L31/18 , C23C16/00
CPC分类号： C23C14/56 , C23C14/24 , C23C14/54 , H01L21/02562 , H01L21/02631 , H01L31/0296 , H01L31/073 , H01L31/1828 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.
摘要翻译：提供了一种装置和相关方法，用于将升华的源材料作为薄膜蒸发沉积在光伏（PV）模块衬底上。容器设置在真空头腔内，并被配置为接收源材料。加热分配歧管设置在容器的下方，并且包括通过其限定的多个通道。容器由分配歧管间接加热到足以升高容器内的源材料的程度。分配板设置在分配歧管下方并且在通过设备输送的基板的水平面上方限定的距离处。分配板包括穿过其的孔的图案，其进一步将通过分配歧管的升华的源材料分布到下面的基底的上表面上。

9. 发明授权

US08338698B2 Anisotropic conductive layer as a back contact in thin film photovoltaic devices 有权
标题翻译：各向异性导电层作为薄膜光伏器件中的背接触
公开(公告)号：US08338698B2
公开(公告)日：2012-12-25
申请号：US12870055
申请日：2010-08-27
申请人： Tammy Jane Lucas , Robert Dwayne Gossman , Scott Daniel Feldman-Peabody
发明人： Tammy Jane Lucas , Robert Dwayne Gossman , Scott Daniel Feldman-Peabody
IPC分类号： H01L31/00
CPC分类号： H01L31/073 , H01L31/022425 , H01L31/0465 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer.
摘要翻译：通常提供薄膜光伏器件。该装置可以包括玻璃基板上的透明导电氧化物层，透明导电层上的n型薄膜层和n型层上的p型薄膜层。 n型薄膜层和p型薄膜层形成p-n结。各向异性导电层被施加在p型薄膜层上，并且包括聚合物粘合剂和多个导电颗粒。然后可以将金属接触层定位在各向异性导电层上。

10. 发明授权

US08247682B2 Metallic gridlines as front contacts of a cadmium telluride based thin film photovoltaic device 有权
标题翻译：金属网格线作为碲化镉基薄膜光伏器件的前触点
公开(公告)号：US08247682B2
公开(公告)日：2012-08-21
申请号：US12825800
申请日：2010-06-29
申请人： Scott Daniel Feldman-Peabody
发明人： Scott Daniel Feldman-Peabody
IPC分类号： H02N6/00 , H01L31/042 , H01L31/00
CPC分类号： H01L31/022425 , H01L31/022466 , H01L31/046 , H01L31/0465 , H01L31/073 , H01L31/1836 , Y02E10/543
摘要： Cadmium telluride based thin film photovoltaic devices are generally described. The device can include a transparent conductive oxide layer on a substrate. A plurality of metal gridlines can directly contact the transparent conductive oxide layer, and can be oriented in a first direction. A cadmium sulfide layer can be included on the transparent conductive oxide layer, and a cadmium telluride layer can be included on the cadmium sulfide layer. A plurality of scribe lines can be defined through the thickness of the cadmium sulfide layer and the cadmium telluride layer to define a plurality of photovoltaic cells such that the plurality of scribe lines are oriented in a second direction that intersects with the first direction.
摘要翻译：基于碲化镉的薄膜光伏器件通常被描述。该器件可以在衬底上包括透明导电氧化物层。多个金属网格线可以直接接触透明导电氧化物层，并且可以沿第一方向取向。在透明导电氧化物层上可以包含硫化镉层，并且可以在硫化镉层上包含碲化镉层。可以通过硫化镉层和碲化镉层的厚度来限定多个划线，以限定多个光伏电池，使得多个划线在与第一方向相交的第二方向上取向。

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